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    • 2. 发明授权
    • Temperature measuring method and apparatus
    • 温度测量方法和仪器
    • US6082892A
    • 2000-07-04
    • US947502
    • 1997-10-10
    • Michael E. AdelDario CabibYaron Ish-ShalomShmuel Mangan
    • Michael E. AdelDario CabibYaron Ish-ShalomShmuel Mangan
    • G01J5/10G01J5/60G01J5/62G01K11/12G01K11/00G01K5/58G01K5/62
    • G01K11/12G01J5/10G01J5/601G01J5/62
    • A method of remotely measuring the temperature of a body, such as a semiconductor wafer, whose transparency varies with both wavelength and temperature and is characterized by an optical absorption edge. The body is illuminated at wavelengths on either side of the optical absorption edge. Based on the measured reflectivity at wavelengths shorter than the optical absorption edge, the direct reflectivity at wavelengths longer than the optical absorption edge is predicted and used to estimate the component of total reflectivity, at wavelengths longer than the optical absorption edge, which corresponds to propagation through the body and reflection back through the body. Light reflected from the body, measured in an "active" channel, is distinguished from light emitted passively by the body and measured in a "passive" channel. In the case of an opaque body, this allows the estimation of the emissivity of the body, and a temperature estimate based on Planck's law.
    • 远程测量其透明度随波长和温度两者而变化的半导体晶片等体的温度的方法,其特征在于光吸收边缘。 身体在光吸收边缘两侧的波长处照亮。 基于在比光吸收边缘短的波长处的测量的反射率,预测在比光吸收边缘长的波长处的直接反射率,并且用于估计在比对应于传播的光吸收边长的波长处的总反射率的分量 通过身体反射穿过身体。 在“活动”通道中测量的从身体反射的光与身体被动发射的光不同,并在“被动”通道中测量。 在不透明的身体的情况下,这允许估计身体的发射率,以及基于普朗克定律的温度估计。
    • 3. 发明授权
    • Method and apparatus for measuring temperature
    • 测量温度的方法和装置
    • US5322361A
    • 1994-06-21
    • US10038
    • 1993-01-28
    • Dario CabibMichael E. Adel
    • Dario CabibMichael E. Adel
    • G01K5/52G01K5/50G01K11/00G01K11/18
    • G01K5/52
    • A method and apparatus for measuring temperature by subjecting, to the temperature to be measured, a light-transmissive body of a material whose dimensions change in response to temperature, directing first rays of light from a light source through a first path including a predetermined distance of travel through the light-transmissive body, simultaneously directing second rays of light from the light source through a second path, parallel to the first path and of a linear length equal to that of the first path, but not including the predetermined distance of travel through the light transmissive body, and measuring the change in phases between the first and second light rays at the ends of the first and second paths, to thereby provide a measurement of the temperature to which the light-transmissive body was subjected.
    • 一种测量温度的方法和装置,所述方法和装置通过使待测温度的材料的透光体的尺寸随温度变化而变化,将来自光源的第一光线引导通过包括预定距离的第一路径 通过透光体行进,同时引导来自光源的第二光线通过平行于第一路径的第二路径并且​​具有等于第一路径的线性长度的线性长度,但不包括预定行程距离 并且测量第一和第二路径的端部处的第一和第二光线之间的相位变化,从而提供对透光体的温度的测量。
    • 5. 发明授权
    • Film thickness mapping using interferometric spectral imaging
    • 使用干涉光谱成像的膜厚度测绘
    • US5856871A
    • 1999-01-05
    • US776063
    • 1997-01-21
    • Dario CabibRobert A. BuckwaldMichael E. Adel
    • Dario CabibRobert A. BuckwaldMichael E. Adel
    • C12Q1/68G01B11/06G01J3/02G01J3/26G01J3/28G01J3/453G01N21/64G01N33/50G01N33/569G06K9/00G06K9/76G01B9/02
    • G06K9/76C12Q1/6841C12Q1/6883G01B11/0675G01J3/2823G01J3/453G01N33/5005G01N33/56966G06K9/00127G01J2003/2866G01J3/02G01J3/26
    • A method of determining the thickness map of a film (14) overlying a substrate (14). This method includes illuminating (10) the film simultaneously from different angles and analyzing spectral intensity of the radiation reflected by each point on the film (14). The analysis is effected by collecting reflected radiation from the film (14), passing the radiation through an interferometer (16) which outputs modulated radiation corresponding to a predetermined set of linear combinations of the spectral intensity of the radiation emitted from each pixel, simultaneously and separately scanning optical path differences generated in the interferometer (16) for each pixel, focusing the radiation outputted from the interferometer (16) on a detector array, and processing the output of the detector array to determine the spectral intensity of each pixel thereof to obtain a spectral intensity distribution. Finally, the method includes further processing the spectral intensity distribution to determine the spatial distribution of the thickness of the film (16).
    • PCT No.PCT / US95 / 08708 Sec。 371日期1997年1月21日 102(e)日期1997年1月21日PCT提交1995年7月12日PCT公布。 公开号WO96 / 03615 日期1996年2月8日一种确定覆盖衬底(14)的膜(14)的厚度图的方法。 该方法包括从不同角度同时照射(10)胶片并分析由胶片(14)上的每个点反射的辐射的光谱强度。 分析是通过收集来自胶片(14)的反射辐射,使辐射通过干涉仪(16),干涉仪(16)同时输出对应于从每个像素发射的辐射的光谱强度的预定的一组线性组合的调制辐射, 分别扫描针对每个像素的干涉仪(16)中产生的光程差,将从干涉仪(16)输出的辐射聚焦在检测器阵列上,并且处理检测器阵列的输出以确定其每个像素获得的光谱强度 光谱强度分布。 最后,该方法包括进一步处理光谱强度分布以确定薄膜(16)的厚度的空间分布。
    • 6. 发明申请
    • Apparatus and Methods for Determining Overlay and Uses of Same
    • 用于确定叠加和使用的装置和方法
    • US20100005442A1
    • 2010-01-07
    • US12560229
    • 2009-09-15
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • Mark GhinovkerMichael E. AdelJorge PoplawskiJoel L. Seligson
    • G06F17/50
    • G06F17/5068G03F7/70633G06F2217/12Y02P90/265
    • Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition.
    • 公开了提供用于确定扫描仪领域的重叠误差或图案布置误差(PPE)的技术和装置,其用于对样品(例如半导体晶片或器件)进行图案化。 该确定在产品晶片或器件上在线执行。 也就是说,在产品晶片或器件本身上提供执行覆盖或PPE测量的目标。 目标是通过将目标放置在活动区域​​内或通过在场的模具之间的街道(条带或划线区域)上分布目标来分布在场上。 然后可以以多种方式使用从分布在场上的目标获得的所得覆盖物或PPE,以改进用于生产样品的制造过程。 例如,所得覆盖层或PPE可用于更准确地预测设备性能和产量,更精确地校正偏离的光刻扫描工具,或确定晶片批次布置。