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1. 发明授权

US6118359A Polarized electromagnetic relay 失效
标题翻译：极化电磁继电器
公开(公告)号：US6118359A
公开(公告)日：2000-09-12
申请号：US325869
申请日：1999-06-04
申请人： Michael Dittmann , Jens Heinrich , Heinz Stadler
发明人： Michael Dittmann , Jens Heinrich , Heinz Stadler
IPC分类号： H01H50/04 , H01H50/18 , H01H51/22 , H01H51/24 , H01H51/08
CPC分类号： H01H51/229
摘要： A polarized magnetic relay has a base body, an armature, an envelope that encompasses insulating material, a coil, a core and a bar-shaped permanent magnet. The base plane is defined by the bottom side of a base body. The armature is arranged between two contact springs that lie parallel to each other in a common plane. Two transverse terminal webs, which have their sheet metal plane extending parallel to the base plane, extend out of the envelope in the area of the rotational axis of the armature and these terminal webs are respectively connected with a fastening tab that has its sheet metal plane extending perpendicular to the base plane. The contact springs exhibit two spring arms and a connecting web, respectively, which has its sheet metal plane extending perpendicular to the base plane. The spring arms exhibit a contact making part and a part that is embedded in the envelope. The part that is embedded in the envelope emerges into the connecting web.
摘要翻译：极化磁继电器具有基体，电枢，包围绝缘材料的外壳，线圈，芯和棒状永久磁铁。基面由基体的底侧限定。电枢布置在两个接触弹簧之间，这两个接触弹簧在公共平面上彼此平行。两个具有平行于基面的钣金平面的横向端子腹板在电枢的旋转轴线的区域中延伸出外壳，并且这些端子腹板分别与具有钣金平面的紧固接头连接垂直于基面延伸。接触弹簧分别具有两个弹簧臂和连接腹板，它们的钣金平面垂直于基面延伸。弹簧臂具有接触部分和嵌入信封中的部分。嵌入信封中的部件出现在连接网中。

2. 发明授权

US6002312A Electromagnetic relay 失效
标题翻译：电磁继电器
公开(公告)号：US6002312A
公开(公告)日：1999-12-14
申请号：US142155
申请日：1998-09-02
申请人： Michael Dittmann , Jens Heinrich , Heinz Stadler
发明人： Michael Dittmann , Jens Heinrich , Heinz Stadler
IPC分类号： H01H50/02 , H01H50/04 , H01H50/14 , H01H51/22
CPC分类号： H01H50/02 , H01H51/2281 , H01H50/023 , H01H50/026 , H01H50/14
摘要： An electromagnetic relay has a base with a contact arrangement and a rocker armature mounted on the base. Above the base, a magnet system with a coil, a core and two yokes is provided, this system working together with the rocker armature. At least the coil with the core is embedded in the insulating material of a basic body which surrounds the base in box-type fashion with side walls that are integrally formed downwardly, and forms a sealed contact chamber. By means of the basic body surrounding the coil, a high insulation strength of the relay between the coil and the contact system is ensured, as is a high stability of the construction.
摘要翻译： PCT No.PCT / DE97 / 00686 Sec。 371日期：1998年9月2日 102（e）1998年9月2日PCT 1997年4月3日PCT PCT。 WO97 / 39467 PCT公开号日期1997年10月23日电磁继电器具有基座，触点布置和安装在基座上的摇臂电枢。在基座之上，提供了具有线圈，铁芯和两个轭的磁体系统，该系统与摇臂电枢一起工作。至少具有芯的线圈被嵌入在基本体的绝缘材料中，该基体以箱形方式围绕底部，侧壁一体形成，并形成密封的接触室。通过围绕线圈的基体，确保线圈和接触系统之间的继电器的高绝缘强度，以及该结构的高稳定性。

3. 发明授权

US6140895A Electromagnetic relay 失效
标题翻译：电磁继电器
公开(公告)号：US6140895A
公开(公告)日：2000-10-31
申请号：US445361
申请日：1999-12-10
申请人： Michael Dittmann , Martin Hanke , Jens Heinrich
发明人： Michael Dittmann , Martin Hanke , Jens Heinrich
IPC分类号： H01H50/18 , H01H51/22 , H01H51/24
CPC分类号： H01H51/2281
摘要： An electromagnetic relay having an armature-spring subassembly that matingly cooperates with a base body having stationary and moving contact elements and stationary terminal elements. The armature-spring subassembly includes a contact arrangement and an armature pivotably mounted to said contact arrangement. The contact arrangement includes two torsion spring ridges and a plurality of contact springs that are attached to both torsion spring ridges.
摘要翻译： PCT No.PCT / DE98 / 01508 Sec。 371 1999年12月10日第 102（e）日期1999年12月10日PCT Filed 1998年6月3日PCT公布。出版物WO99 / 01882 日期1999年1月14日具有电枢 - 弹簧子组件的电磁继电器与具有固定和移动的接触元件和固定端子元件的基体配合配合。电枢 - 弹簧子组件包括接触装置和可枢转地安装到所述接触装置的衔铁。接触装置包括两个扭转弹簧脊和连接到两个扭转弹簧脊的多个接触弹簧。

4. 发明授权

US5734308A Electromagnetic monostable small relay 失效
标题翻译：电磁单稳小继电器
公开(公告)号：US5734308A
公开(公告)日：1998-03-31
申请号：US769850
申请日：1996-12-19
申请人： Michael Dittmann , Jens Heinrich
发明人： Michael Dittmann , Jens Heinrich
IPC分类号： H01H50/24 , H01H50/14 , H01H50/36 , H01H51/22 , H01H51/08
CPC分类号： H01H50/36 , H01H50/14 , H01H50/24 , H01H51/2281
摘要： Electromagnetic, monostable, small relay has a rocker armature arranged between a base plate and a coil, the armature being mounted with its middle segment at the end of an L-shaped yoke, and forming a working air gap with a second yoke. Contact springs are connected with the armature, which work together with fixed contacts anchored in the base. A resetting spring is connected with the armature and prestresses the armature into a rest position on the first yoke. For stabilization of the construction, and for separation between a contact chamber and a coil chamber, a base body is provided with an H-shaped cross-section, which overlaps the base plate in an interleaving manner, and which forms supports for the terminal pins of the base plate on both sides of the armature. In this way, a monostable relay is created, which can have any of conventional soldering pin terminals, SMT terminals, or press-fit terminals.
摘要翻译：电磁单稳态小继电器具有布置在基板和线圈之间的摇臂电枢，电枢以其中间段安装在L形磁轭的端部，并与第二磁轭形成工作气隙。接触弹簧与电枢连接，电枢与锚固在基座中的固定触点一起工作。复位弹簧与电枢连接并将电枢预应力到第一磁轭上的静止位置。为了稳定结构，并且为了在接触室和线圈室之间分离，基体设置有H形横截面，其以交错的方式与基板重叠，并且形成用于端子销的支撑件的电枢两侧的基板。以这种方式，创建了单稳态继电器，其可以具有常规焊接端子，SMT端子或压配合端子中的任何一种。

5. 发明授权

US6081176A Electromagnetic relay 失效
标题翻译：电磁继电器
公开(公告)号：US6081176A
公开(公告)日：2000-06-27
申请号：US363266
申请日：1999-07-29
申请人： Michael Dittmann , Jens Heinrich , Rainer Vogel , Titus Ziegler
发明人： Michael Dittmann , Jens Heinrich , Rainer Vogel , Titus Ziegler
IPC分类号： H01H50/56 , H01H1/40 , H01H49/00 , H01H50/14 , H01H50/54 , H01H50/64 , H01H67/02
CPC分类号： H01H50/14 , H01H1/403 , H01H49/00 , H01H50/54
摘要： An electromagnetic relay has a magnet system, a base, a movable contact element, stationary contact elements and contact terminal elements. The base is formed by a printed circuit board arrangement. A first printed circuit board of the printed circuit board arrangement thereby faces toward the magnet system, and a second printed circuit board of the printed circuit board arrangement forms a bottom side of the relay. Each of the two printed circuit boards has interconnects. The movable contact element is actuated by an armature and is arranged between the two printed circuit boards. An actuation element that transmits the movement of the armature onto the movable contact element has a pin-shaped end section projecting through a recess in the first printed circuit board. The contact terminal elements are pin-shaped and project through congruent recesses in the two printed circuit boards.
摘要翻译：电磁继电器具有磁体系统，基座，可动接触元件，固定接触元件和接触端子元件。基座由印刷电路板布置形成。印刷电路板装置的第一印刷电路板因此朝向磁体系统，并且印刷电路板装置的第二印刷电路板形成继电器的底侧。两个印刷电路板中的每一个具有互连。可动接触元件由电枢致动并且布置在两个印刷电路板之间。将电枢的运动传递到可动接触元件上的致动元件具有突出穿过第一印刷电路板中的凹部的销状端部。接触端子元件是针形的，并且通过两个印刷电路板中的一致凹槽突出。

6. 发明授权

US08436425B2 SOI semiconductor device comprising substrate diodes having a topography tolerant contact structure 有权
标题翻译： SOI半导体器件包括具有地形容忍接触结构的衬底二极管
公开(公告)号：US08436425B2
公开(公告)日：2013-05-07
申请号：US12915168
申请日：2010-10-29
申请人： Jens Heinrich , Kai Frohberg , Kerstin Ruttloff
发明人： Jens Heinrich , Kai Frohberg , Kerstin Ruttloff
IPC分类号： H01L27/12
CPC分类号： H01L29/8611 , H01L27/0207 , H01L27/0629 , H01L27/1207
摘要： In an SOI semiconductor device, substrate diodes may be formed on the basis of a superior design of the contact level and the metallization layer, thereby avoiding the presence of metal lines connecting to both diode electrodes in the critical substrate diode area. To this end, contact trenches may be provided so as to locally connect one type of diode electrodes within the contact level. Consequently, additional process steps for planarizing the surface topography upon forming the contact level may be avoided.
摘要翻译：在SOI半导体器件中，可以基于接触电平和金属化层的优良设计来形成衬底二极管，从而避免在关键衬底二极管区域中存在连接到二极管电极的金属线。为此，可以提供接触沟槽，以便在接触电平内局部连接一种类型的二极管电极。因此，可以避免在形成接触电平时使表面形貌平坦化的附加工艺步骤。

7. 发明申请

US20120153480A1 Metallization Systems of Semiconductor Devices Comprising a Copper/Silicon Compound as a Barrier Material 有权
标题翻译：包含铜/硅化合物作为阻挡材料的半导体器件的金属化系统
公开(公告)号：US20120153480A1
公开(公告)日：2012-06-21
申请号：US13192164
申请日：2011-07-27
申请人： Ronny Pfuetzner , Jens Heinrich
发明人： Ronny Pfuetzner , Jens Heinrich
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53228 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L23/53238 , H01L23/53295 , H01L23/5384 , H01L2924/0002 , H01L2924/00
摘要： In sophisticated metallization systems of semiconductor devices, a sensitive core metal, such as copper, may be efficiently confined by a conductive barrier material comprising a copper/silicon compound, such as a copper silicide, which may provide superior electromigration behavior and higher electrical conductivity compared to conventionally used tantalum/tantalum nitride barrier systems.
摘要翻译：在半导体器件的复杂金属化系统中，诸如铜的敏感芯子金属可以被包含诸如硅化铜的铜/硅化合物的导电阻挡材料有效地限制，这可以提供优异的电迁移行为和更高的电导率适用于常规使用的钽/氮化钽屏障系统。

8. 发明申请

US20120115326A1 Method of Forming Metal Silicide Regions 审中-公开
标题翻译：形成金属硅化物区域的方法
公开(公告)号：US20120115326A1
公开(公告)日：2012-05-10
申请号：US12942116
申请日：2010-11-09
申请人： Kai Frohberg , Jens Heinrich , Katrin Reiche
发明人： Kai Frohberg , Jens Heinrich , Katrin Reiche
IPC分类号： H01L21/321
CPC分类号： H01L21/28052 , H01L21/28518 , H01L29/41783 , H01L29/665
摘要： The method described herein involves the formation of metal silicide regions. The method may involve forming a layer of refractory metal on a structure comprising silicon, forming a layer of silicon on the layer of refractory metal and, after forming the layer of silicon, performing at least one heat treatment process to form a metal silicide region in the structure.
摘要翻译：本文描述的方法涉及形成金属硅化物区域。该方法可以包括在包含硅的结构上形成难熔金属层，在难熔金属层上形成硅层，在形成硅层之后，进行至少一个热处理工艺以形成金属硅化物区域结构。

9. 发明申请

US20110129980A1 CAP REMOVAL IN A HIGH-K METAL GATE ELECTRODE STRUCTURE BY USING A SACRIFICIAL FILL MATERIAL 有权
标题翻译：通过使用真空填充材料在高K金属电极结构中去除CAP
公开(公告)号：US20110129980A1
公开(公告)日：2011-06-02
申请号：US12905655
申请日：2010-10-15
申请人： Jens Heinrich , Frank Seliger , Ralf Richter , Markus Lenski
发明人： Jens Heinrich , Frank Seliger , Ralf Richter , Markus Lenski
IPC分类号： H01L21/336
CPC分类号： H01L21/823828 , H01L21/823807 , H01L29/7843
摘要： Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.
摘要翻译：可以基于牺牲填充材料有效地去除复杂的高k金属栅极电极结构的介电盖层，从而可靠地保持保护性侧壁间隔结构的完整性，这又可以导致优异的阈值电压均匀性晶体管。牺牲填充材料可以以有机材料的形式提供，其可以基于湿式显影工艺而减小厚度，从而能够实现高度的工艺可控性。

10. 发明授权

US07951677B2 Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal deposition 有权
标题翻译：基于在工作功能金属沉积之前施加的牺牲填充材料，在替代浇口方法中的圆角
公开(公告)号：US07951677B2
公开(公告)日：2011-05-31
申请号：US12894985
申请日：2010-09-30
申请人： Jens Heinrich , Thomas Werner , Frank Seliger , Frank Richter
发明人： Jens Heinrich , Thomas Werner , Frank Seliger , Frank Richter
IPC分类号： H01L21/336
CPC分类号： H01L21/82385 , H01L21/28088 , H01L21/823835 , H01L21/823842 , H01L29/4966 , H01L29/66545 , H01L29/66583 , H01L29/7833
摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.
摘要翻译：在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

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