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1. 发明授权

US06972050B2 Method for depositing in particular crystalline layers, and device for carrying out the method 失效
公开(公告)号：US06972050B2
公开(公告)日：2005-12-06
申请号：US10439195
申请日：2003-05-15
申请人： Michael Bremser , Martin Dauelsberg , Gerhard Karl Strauch
发明人： Michael Bremser , Martin Dauelsberg , Gerhard Karl Strauch
IPC分类号： C23C16/455 , C30B25/14 , H01L21/205 , C30B25/08
CPC分类号： C30B25/14 , C23C16/455
摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor. The flow parameters are selected in such a way that the second reaction gas is essentially only pyrolytically decomposed in the inlet area and the products of decomposition diffuse crosswise to the direction of Dow of the gases to a substrate located on the process chamber floor, in a deposition area which is located downstream of the input area. Upon reaching said substrate, said products of decomposition condense to form a layer, together with products of decomposition of the first reaction layer. The invention aims to ensure that the decomposition of the organometallic products of decomposition takes place essentially only in the inlet area, even in the case of longer deposition areas, and to ensure that the partial pressures of the products of decomposition (depletion) in the gas phase above the deposition area maintain an essentially linear course. To this end, the invention provides that the kinematic viscosity of the carrier gas that is added to the second reaction gas is adjusted, especially by mixing two gases which differconsiderably in terms of their kinematic viscosity, in such a way that the quotient of Reynolds numbers in the two gas outlet areas is approximately one for essentially approximately identical average gas speeds.

2. 发明申请

US20120263877A1 CVD Reactor Having Gas Inlet Zones that Run in a Strip-Like Manner and a Method for Deposition of a Layer on a Substrate in a CVD Reactor of this Kind 审中-公开
标题翻译：具有以类似方式运行的气体入口区域的CVD反应器以及该类型的CVD反应器中的基板上的层的沉积方法
公开(公告)号：US20120263877A1
公开(公告)日：2012-10-18
申请号：US13391561
申请日：2010-08-02
申请人： Gerhard Karl Strauch , Martin Dauelsberg
发明人： Gerhard Karl Strauch , Martin Dauelsberg
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4557 , C23C16/45574
摘要： The invention relates to a CVD reactor having a process chamber (1), the floor (3) of which is formed by a susceptor (2) for receiving substrates (4) to be coated with a layer and the ceiling (6) of which is formed by the underside of a gas inlet element (5) that has a multiplicity of gas inlet openings (13, 14) distributed uniformly over its entire surface, the gas inlet openings (13, 14) being divided into strip-like first and second gas inlet zones (11, 12) that run parallel to one another in a direction of extent, the gas inlet openings (13) of a first gas inlet zone (11) being connected to a common first process-gas feed line (9) for introducing a first process gas into the process chamber (1), the gas inlet openings (14) of a second gas inlet zone (12) being connected to a common first process-gas feed line (10), which is different from the first process-gas feed line (9), for introducing a second process gas into the process chamber (1), and the first and second gas inlet zones (11, 12) lying alternatingly alongside one another. The spacing (D) of a multiplicity of gas inlet openings (13, 14) of each gas inlet zone (11, 12) that lie side by side transverse to the direction of extent is to be approximately one quarter of the height (H) of the process chamber (1) and the width (W) of an individual gas inlet zone (11, 12) is to correspond approximately to the height (H).
摘要翻译：本发明涉及一种具有处理室（1）的CVD反应器，其底板（3）由接受器（2）形成，用于接收待涂覆层的基板（4），并且其上面由气体入口元件（5）的下侧形成，其具有在其整个表面上均匀分布的多个气体入口（13,14），所述气体入口开口（13,14）被分成条状和第二气体入口区域（11,12），其在一定程度上彼此平行地延伸，第一气体入口区域（11）的气体入口开口（13）连接到共同的第一处理气体供给管线（9）），用于将第一工艺气体引入所述处理室（1）中，所述第二气体入口区（12）的气体入口开口（14）连接到共同的第一处理气体供给管线（10）用于将第二处理气体引入处理室（1）的第一工艺气体供给管线（9），以及第一和第二气体入口区（11,12）交替地彼此交替。每个气体入口区域（11,12）的多个气体入口开口（13,14）的横向于横向方向的间隔（D）约为高度（H）的四分之一，处理室（1）的宽度（W）与各个气体入口区（11,12）的宽度（W）大致对应于高度（H）。

3. 发明授权

US07625448B2 Inlet system for an MOCVD reactor 有权
标题翻译：用于MOCVD反应器的入口系统
公开(公告)号：US07625448B2
公开(公告)日：2009-12-01
申请号：US10591906
申请日：2006-08-28
申请人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
发明人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
IPC分类号： C30B21/02
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译：本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽气流。为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。

4. 发明申请

US20120156396A1 CVD REACTOR 审中-公开
标题翻译： CVD反应器
公开(公告)号：US20120156396A1
公开(公告)日：2012-06-21
申请号：US13394040
申请日：2010-08-30
申请人： Gerhard Karl Strauch , Daniel Brien , Martin Dauelsberg
发明人： Gerhard Karl Strauch , Daniel Brien , Martin Dauelsberg
IPC分类号： C23C16/46 , C23C16/505 , C23C16/458
CPC分类号： C23C16/46 , C23C16/52
摘要： The invention relates to a CVD reactor comprising a heatable body (2, 3) disposed in a reactor housing, a heating device (4, 17) for heating the body (2, 3) located at a distance from the body (2, 3), and a cooling device (5, 18) located at a distance from the body (2, 3). The heatable body, the heating device, and the cooling device are arranged such that heat is transferred from the heating device (4, 17) across the space between the heating device (4, 17) and the body (2, 3) to the body (2, 3), and from the body (2, 3) across the space between the body (2, 3) and the cooling device (5, 18) to the cooling device (5, 18). In order to be able to affect the surface temperature of the heated process chamber walls in a locally reproducible manner, control bodies (6, 19) can be inserted into the space between the cooling and/or heating device (4, 5, 17, 18). During the thermal treatment or between sequential treatment steps, said bodies are displaced such that the heat transport is locally affected.
摘要翻译：本发明涉及一种CVD反应器，其包括设置在反应器壳体中的可加热体（2,3），加热装置（4,17），用于加热位于与主体（2,3）相距一定距离的主体（2,3））和位于距离主体（2,3）一定距离处的冷却装置（5,18）。可加热体，加热装置和冷却装置被布置成使得热量从加热装置（4,17）传递到加热装置（4,17）和主体（2,3）之间的空间主体（2,3），并且从主体（2,3）穿过主体（2,3）和冷却装置（5,18）之间的空间连接到冷却装置（5,18）。为了能够以局部可再现的方式影响加热的处理室壁的表面温度，可以将控制体（6,19）插入冷却和/或加热装置（4,5,17， 18）。在热处理期间或在连续处理步骤之间，所述主体被移位，使得热传输局部受到影响。

5. 发明申请

US20080069953A1 Inlet system for an MOCVD reactor 有权
标题翻译：用于MOCVD反应器的入口系统
公开(公告)号：US20080069953A1
公开(公告)日：2008-03-20
申请号：US10591906
申请日：2006-08-28
申请人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
发明人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
IPC分类号： C23C16/00
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译：本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽气流。为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。

6. 发明授权

US08152924B2 CVD reactor comprising a gas inlet member 有权
标题翻译： CVD反应器包括气体入口构件
公开(公告)号：US08152924B2
公开(公告)日：2012-04-10
申请号：US12094972
申请日：2006-11-11
申请人： Martin Dauelsberg , Johannes Käppeler , Conor Martin
发明人： Martin Dauelsberg , Johannes Käppeler , Conor Martin
IPC分类号： C23C16/455 , C23C16/458 , C23F16/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45508 , C23C16/45574 , C23C16/45591
摘要： The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the center of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8′) of the process chamber (1), extending in a horizontal direction and rotating about the center, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3′) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6′) of a gas deflecting face (6) is flush with the base (8′).
摘要翻译：本发明涉及一种用于通过在气体入口构件（3）的垂直方向上延伸的流动通道（4）引入的处理气体在衬底上沉积至少一层的装置，该气体入口构件固定在适当位置相对于反应器壳体，进入沿水平方向延伸的处理室（1），其中处理气体离开气体入口构件（3）的一部分的气体出口，突出到旋转对称的中心处理室（1），并且经由处理室（1）的基部（8'）在径向向外的方向上流动，在水平方向上延伸并围绕中心旋转，衬底位于基底上。为了改善处理室底部正上方的气流，提出了气体入口部件（3）的前部（3'）突出到一个盆形凹部（23）和一个端部（6 气体偏转面（6）'与基座8'齐平。

7. 发明申请

US20080308040A1 Cvd Reactor Comprising a Gas Inlet Member 有权
标题翻译：包含气体入口构件的Cvd反应器
公开(公告)号：US20080308040A1
公开(公告)日：2008-12-18
申请号：US12094972
申请日：2006-11-11
申请人： Martin Dauelsberg , Johannes Kappeler , Conor Martin
发明人： Martin Dauelsberg , Johannes Kappeler , Conor Martin
IPC分类号： C23C16/54
CPC分类号： C23C16/45508 , C23C16/45574 , C23C16/45591
摘要： The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the centre of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8′) of the process chamber (1), extending in a horizontal direction and rotating about the centre, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3′) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6′) of a gas deflecting face (6) is flush with the base (8′).
摘要翻译：本发明涉及一种用于通过在气体入口构件（3）的垂直方向上延伸的流动通道（4）引入的处理气体在衬底上沉积至少一层的装置，该气体入口构件固定在适当位置相对于反应器壳体，进入沿水平方向延伸的处理室（1），其中处理气体离开气体入口构件（3）的一部分的气体出口，突出到旋转对称的中心处理室（1），并且经由处理室（1）的基部（8'）在径向向外的方向上流动，在水平方向上延伸并围绕中心旋转，衬底位于基底上。为了改善处理室底部正上方的气流，提出了气体入口部件（3）的前部（3'）突出到一个盆形凹部（23）和一个端部（6 气体偏转面（6）'与基座8'齐平。

8. 发明申请

US20150007771A1 GAS INLET MEMBER OF A CVD REACTOR 有权
标题翻译：气体入口成员的CVD反应堆
公开(公告)号：US20150007771A1
公开(公告)日：2015-01-08
申请号：US14232246
申请日：2012-07-05
申请人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
发明人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
IPC分类号： C23C16/455
CPC分类号： C23C16/45591 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14
摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.
摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热出口板。

9. 发明授权

US08157915B2 CVD reactor having a process-chamber ceiling which can be lowered 有权
标题翻译：具有可以降低的处理室顶板的CVD反应器
公开(公告)号：US08157915B2
公开(公告)日：2012-04-17
申请号：US12297973
申请日：2007-04-17
申请人： Martin Dauelsberg , Johannes Käppeler , Bernd Schulte
发明人： Martin Dauelsberg , Johannes Käppeler , Bernd Schulte
IPC分类号： B05D3/06 , H01L21/44 , C23F1/00 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4411 , C23C16/45572 , C23C16/46
摘要： The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.
摘要翻译：本发明涉及一种用于在衬底（4）上沉积一层或多层的设备，其包括设置在反应器壳体（1）中并具有可加热底部（3）的处理室（2），其上基板支座和平行于底部（3）延伸的盖（5）以及用于引入工艺气体的气体入口设备（6）。处理室盖（5）和处理室底部（3）之间的距离（H）可以减小到几乎为零。在处理室盖（5）的上方设置冷却装置（7），处理室盖（5）在沉积层期间在处理位置被冷却，处理室盖（5）之间的距离与冷却装置（7）和处理室盖（5）随着处理室盖（5）和处理室底部（3）之间的距离（H）而增加。

10. 发明申请

US20080072821A1 SMALL VOLUME SYMMETRIC FLOW SINGLE WAFER ALD APPARATUS 审中-公开
标题翻译：小容量对流流量单波形装置
公开(公告)号：US20080072821A1
公开(公告)日：2008-03-27
申请号：US11780698
申请日：2007-07-20
申请人： Jeremic Dalton , Martin Dauelsberg , Kenneth Doering , M. Karim , Thomas Seidel , Gerhard Strauch
发明人： Jeremic Dalton , Martin Dauelsberg , Kenneth Doering , M. Karim , Thomas Seidel , Gerhard Strauch
IPC分类号： C23C16/00
CPC分类号： C30B35/00 , C30B25/14
摘要： A reaction chamber apparatus includes a vertically movable heater-susceptor with an attached annular attached flow ring that performs as a gas conduit. The outlet port of the flow ring extends below the bottom of a wafer transport slot valve when the susceptor is in its process (higher) position, while the gas conduit formed by the flow ring has an external surface at its edge that isolates the outer space of the reactor above the wafer from the confined reaction space. In some cases, the outer edge of the gas conduit is in proximity to a ring attached to the reactor lid and, together, the ring and conduit act as a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour, thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.
摘要翻译：反应室装置包括可垂直移动的加热器基座，其具有作为气体导管执行的附接的环形附接流动环。当基座处于（更高）位置时，流动环的出口延伸到晶片运输槽阀的底部的下方，而由流动环形成的气体导管在其边缘处具有隔离外部空间的外表面的反应器从受限制的反应空间移动到晶片上方。在一些情况下，气体导管的外边缘靠近附接到反应器盖的环，并且环和导管一起作为榫槽（TIG）构造。在某些情况下，TIG设计可能具有阶梯轮廓，从而限制下游气体向反应器外部空间的扩散回流。

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