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1. 发明申请

US20150007771A1 GAS INLET MEMBER OF A CVD REACTOR 有权
标题翻译：气体入口成员的CVD反应堆
公开(公告)号：US20150007771A1
公开(公告)日：2015-01-08
申请号：US14232246
申请日：2012-07-05
申请人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
发明人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
IPC分类号： C23C16/455
CPC分类号： C23C16/45591 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14
摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.
摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热出口板。

2. 发明申请

US20090081853A1 PROCESS FOR DEPOSITING LAYERS CONTAINING SILICON AND GERMANIUM 有权
标题翻译：沉积含有硅和锗的层的工艺
公开(公告)号：US20090081853A1
公开(公告)日：2009-03-26
申请号：US11572101
申请日：2005-02-22
申请人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
发明人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
IPC分类号： H01L21/205
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52 , Y10S438/933
摘要： The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.
摘要翻译：本发明涉及一种用于在处理室（2）中的至少一个衬底上沉积至少一个半导体层的方法。所述半导体层由若干组分组成，这些组分通过一个相应的注射器单元不间断地将溶解在液体中的液体原料（3）或起始材料（3）蒸发到回火蒸发室（4）中来蒸发，（5），同时所述蒸气通过载气（7）供给到处理室。本发明的方法的特征在于，质量流量参数，例如初步注射压力，注射频率，脉冲/暂停比率以及脉冲/停顿之间的相位关系和另一个注射器单元的脉冲/停顿（ s），其通过相关联的注射器单元（5）确定第一含硅起始材料和含锗的第二起始材料（3）的质量流率的进度被单独调整或变化。

3. 发明授权

US06536454B2 Device for treating a disc-shaped object 有权
标题翻译：用于处理盘形物体的装置
公开(公告)号：US06536454B2
公开(公告)日：2003-03-25
申请号：US09846049
申请日：2001-05-01
申请人： Johannes Lindner
发明人： Johannes Lindner
IPC分类号： B08B302
CPC分类号： H01L21/68728 , H01L21/68792 , Y10S134/902
摘要： The invention relates to a device for treating at least one bottom of a disc-shaped object.
摘要翻译：本发明涉及一种用于处理盘形物体的至少一个底部的装置。

4. 发明申请

US20080096369A1 Apparatus and method for high-throughput chemical vapor deposition 审中-公开
标题翻译：高通量化学气相沉积的装置和方法
公开(公告)号：US20080096369A1
公开(公告)日：2008-04-24
申请号：US11573325
申请日：2005-07-01
申请人： Piotr Strzyzewski , Peter Baumann , Marcus Schumacher , Johannes Lindner , Antonio Meequilda Kusters
发明人： Piotr Strzyzewski , Peter Baumann , Marcus Schumacher , Johannes Lindner , Antonio Meequilda Kusters
IPC分类号： H01L21/36 , C23C16/00
CPC分类号： C23C16/458 , B05C3/18 , B05D1/36 , C23C16/45551
摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11′, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11′) into which different gas feed lines (24, 24′) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
摘要翻译：本发明涉及一种用于将至少一个特别薄的层沉积在至少一个基底（9）上的装置。所述装置包括容纳在反应器壳体（2）中并包括承载至少一个基板（9）的可移动基座（20）的处理室（1,20,11,11'，40,21）。多个气体供给管线（24）进入所述处理室并且供给包括涂层成分的不同工艺气体。所述工艺气体可以在随后的工艺步骤中进料到处理室，从而将涂层形成组分沉积到衬底（9）上。为了增加所述方法的生产量，处理室设置有多个分离的沉积室（11,11'），不同的气体供给管线（24,24'）运行到其中，从而供给单独的气体组成。基板（9）可以通过移动基座（20）并沉积不同的层或层部件而一个接一个地馈送到所述腔室。

5. 发明授权

US08114480B2 Method for self-limiting deposition of one or more monolayers 有权
标题翻译：用于自限制沉积一个或多个单层的方法
公开(公告)号：US08114480B2
公开(公告)日：2012-02-14
申请号：US11763231
申请日：2007-06-14
申请人： Peter Baumann , Johannes Lindner
发明人： Peter Baumann , Johannes Lindner
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/40 , C23C16/45553
摘要： The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alternation cyclically, at least the first starting material of which contains the first component, to deposit essentially only one layer of the first component in each cycle. To widen the spectrum of available starting materials suitable for the process, it is proposed that the first starting material shall consist of two β-diketones and one diene coordinated with one ruthenium atom, and a limiter shall be introduced into the process chamber simultaneously with or some time after the first starting material, such that deposition of the first component on the substrate is automatically concluded after the first layer is completed, wherein the limiter is or contains octane, butyl acetates, tetrahydrofuran, methanol, ethanol, isobutylamines, triethylamines, butanol, cyclohexane, isooctane, dioxane, dimethylformamide, pyridine and/or toluene.
摘要翻译：本发明涉及一种用于在处理室中的至少一个基底上沉积含有至少一种第一组分的至少一层的方法，其中将第一和第二起始材料以气态形式循环地以交替方式引入所述处理室，至少其第一起始材料包含第一组分，以在每个循环中仅基本沉积第一组分的一层。为了扩大适用于该工艺的可用起始材料的光谱，提出第一起始材料应由两个二酮和一个与一个钌原子配位的二烯构成，并且限制器应与或者在第一起始材料之后的一段时间，使得在第一层完成之后，第一组分在衬底上的沉积自动结束，其中限制器是或含有辛烷，乙酸丁酯，四氢呋喃，甲醇，乙醇，异丁胺，三乙胺，丁醇，环己烷，异辛烷，二恶烷，二甲基甲酰胺，吡啶和/或甲苯。

6. 发明申请

US20110233344A1 Satellite control system 审中-公开
公开(公告)号：US20110233344A1
公开(公告)日：2011-09-29
申请号：US12804174
申请日：2010-07-15
申请人： Charles E. Hunter , Jurgen Klaus Vollrath , John H. Hebrank , Bernard L. Bailou, JR. , Judson Sidney Clements , Thomas Johannes Lindner , Ravi Prasad , Philip E. Russell , Elliott M. Pines , David W. Carey
发明人： Charles E. Hunter , Jurgen Klaus Vollrath , John H. Hebrank , Bernard L. Bailou, JR. , Judson Sidney Clements , Thomas Johannes Lindner , Ravi Prasad , Philip E. Russell , Elliott M. Pines , David W. Carey
IPC分类号： B64G1/26 , G05D1/08
CPC分类号： B64G1/26 , B64G1/244
摘要： In a satellite control system, a liquid is ejected by thermal ejection from holes in a substrate structure to create a reactive force on the satellite allowing the position, such as the attitude, of the satellite to be adjusted.

7. 发明授权

US07732308B2 Process for depositing layers containing silicon and germanium 有权
标题翻译：用于沉积含硅和锗的层的工艺
公开(公告)号：US07732308B2
公开(公告)日：2010-06-08
申请号：US11572101
申请日：2005-02-22
申请人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
发明人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
IPC分类号： H01L21/00
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52 , Y10S438/933
摘要： The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.
摘要翻译：本发明涉及一种用于在处理室（2）中的至少一个衬底上沉积至少一个半导体层的方法。所述半导体层由若干组分组成，这些组分通过一个相应的注射器单元不间断地将溶解在液体中的液体原料（3）或起始材料（3）蒸发到回火蒸发室（4）中来蒸发，（5），同时所述蒸气通过载气（7）供给到处理室。本发明的方法的特征在于，质量流量参数，例如初步注射压力，注射频率，脉冲/暂停比率以及脉冲/停顿之间的相位关系和另一个注射器单元的脉冲/停顿（ s），其通过相关联的注射器单元（5）确定第一含硅起始材料和含锗的第二起始材料（3）的质量流率的进度被单独调整或变化。

8. 发明授权

US09587312B2 Gas inlet member of a CVD reactor 有权
标题翻译： CVD反应器的气体入口构件
公开(公告)号：US09587312B2
公开(公告)日：2017-03-07
申请号：US14232246
申请日：2012-07-05
申请人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
发明人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
IPC分类号： C23C16/455 , C23C16/30 , C30B25/14
CPC分类号： C23C16/45591 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14
摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.
摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热出口板。

9. 发明授权

US07410670B2 Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unit 有权
标题翻译：用于通过多通道注射单元不连续注射液体和溶解的起始物质沉积单组分或多组分层和层序列的方法和设备
公开(公告)号：US07410670B2
公开(公告)日：2008-08-12
申请号：US11377759
申请日：2006-03-16
申请人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Marc Deschler
发明人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Marc Deschler
IPC分类号： C23C16/00
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52
摘要： The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber by means of non-continuous injection of a liquid starting material or a starting material dissolved in a liquid using a respective injector unit. Said vapor is guided to the process chamber by means of a carrier gas. It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit, determining the time response of the flow of material through each injector unit. The pressure in the process chamber is less than 100 mbars, the process chamber is tempered and several series of layers are deposited on the substrate during one process step.
摘要翻译：本发明涉及用于在处理室中的至少一个衬底上沉积至少一层的方法和装置。所述层包括若干组分并且是绝缘的，钝化的或导电的。通过使用相应的注射器单元非溶剂地喷射溶解在液体中的液体起始材料或起始材料，在回火蒸发室中蒸发组分。所述蒸气通过载气被引导到处理室。重要的是单独调整或改变材料流动参数，例如喷射频率和脉冲/暂停比以及脉冲/暂停与其他喷射器单元的脉冲/暂停的相位关系，确定流量的时间响应的材料通过每个注射器单元。处理室中的压力小于100mbar，处理室被回火，并且在一个工艺步骤期间将几个系列的层沉积在衬底上。

10. 发明申请

US20070293055A1 Method for self-limiting deposition of one or more monolayers 有权
标题翻译：用于自限制沉积一个或多个单层的方法
公开(公告)号：US20070293055A1
公开(公告)日：2007-12-20
申请号：US11763231
申请日：2007-06-14
申请人： Peter Baumann , Johannes Lindner
发明人： Peter Baumann , Johannes Lindner
IPC分类号： H01L21/31
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/40 , C23C16/45553
摘要： The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alternation cyclically, at least the first starting material of which contains the first component, to deposit essentially only one layer of the first component in each cycle. To widen the spectrum of available starting materials suitable for the process, it is proposed that the first starting material shall consist of two β-diketones and one diene coordinated with one ruthenium atom, and a limiter shall be introduced into the process chamber simultaneously with or some time after the first starting material, such that deposition of the first component on the substrate is automatically concluded after the first layer is completed, wherein the limiter is or contains octane, butyl acetates, tetrahydrofuran, methanol, ethanol, isobutylamines, triethylamines, butanol, cyclohexane, isooctane, dioxane, dimethylformamide, pyridine and/or toluene.
摘要翻译：本发明涉及一种用于在处理室中的至少一个基底上沉积含有至少一种第一组分的至少一层的方法，其中将第一和第二起始材料以气态形式循环地以交替方式引入所述处理室，至少其第一起始材料包含第一组分，以在每个循环中仅基本沉积第一组分的一层。为了扩大适用于该方法的可用原料的光谱，提出第一起始原料应由两个β-二酮和一个与一个钌原子配位的二烯构成，并且限制器应与在第一起始材料之后的一段时间，使得第一层完成后第一组分沉积在基底上自动结束，其中限制器是或含有辛烷，乙酸丁酯，四氢呋喃，甲醇，乙醇，异丁胺，三乙胺，丁醇，环己烷，异辛烷，二恶烷，二甲基甲酰胺，吡啶和/或甲苯。

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