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1. 发明申请

US20080308040A1 Cvd Reactor Comprising a Gas Inlet Member 有权
标题翻译：包含气体入口构件的Cvd反应器
公开(公告)号：US20080308040A1
公开(公告)日：2008-12-18
申请号：US12094972
申请日：2006-11-11
申请人： Martin Dauelsberg , Johannes Kappeler , Conor Martin
发明人： Martin Dauelsberg , Johannes Kappeler , Conor Martin
IPC分类号： C23C16/54
CPC分类号： C23C16/45508 , C23C16/45574 , C23C16/45591
摘要： The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the centre of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8′) of the process chamber (1), extending in a horizontal direction and rotating about the centre, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3′) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6′) of a gas deflecting face (6) is flush with the base (8′).
摘要翻译：本发明涉及一种用于通过在气体入口构件（3）的垂直方向上延伸的流动通道（4）引入的处理气体在衬底上沉积至少一层的装置，该气体入口构件固定在适当位置相对于反应器壳体，进入沿水平方向延伸的处理室（1），其中处理气体离开气体入口构件（3）的一部分的气体出口，突出到旋转对称的中心处理室（1），并且经由处理室（1）的基部（8'）在径向向外的方向上流动，在水平方向上延伸并围绕中心旋转，衬底位于基底上。为了改善处理室底部正上方的气流，提出了气体入口部件（3）的前部（3'）突出到一个盆形凹部（23）和一个端部（6 气体偏转面（6）'与基座8'齐平。

2. 发明申请

US20090064935A1 CVD REACTOR HAVING A PROCESS-CHAMBER CEILING WHICH CAN BE LOWERED 有权
标题翻译：具有能够降低的过程室天花板的CVD反应器
公开(公告)号：US20090064935A1
公开(公告)日：2009-03-12
申请号：US12297973
申请日：2007-04-17
申请人： Martin Dauelsberg , Johannes Kappeler , Bernd Schulte
发明人： Martin Dauelsberg , Johannes Kappeler , Bernd Schulte
IPC分类号： C23C16/46
CPC分类号： C23C16/4405 , C23C16/4411 , C23C16/45572 , C23C16/46
摘要： The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.
摘要翻译：本发明涉及一种用于在衬底（4）上沉积一层或多层的设备，其包括设置在反应器壳体（1）中并具有可加热底部（3）的处理室（2），其上基板支座和平行于底部（3）延伸的盖（5）以及用于引入工艺气体的气体入口设备（6）。处理室盖（5）和处理室底部（3）之间的距离（H）可以减小到几乎为零。在处理室盖（5）的上方设置冷却装置（7），处理室盖（5）在沉积层期间在处理位置被冷却，处理室盖（5）之间的距离与冷却装置（7）和处理室盖（5）随着处理室盖（5）和处理室底部（3）之间的距离（H）而增加。

3. 发明授权

US08439023B2 Ignition coil, in particular for an internal combustion engine of a motor vehicle 有权
标题翻译：点火线圈，特别是汽车的内燃机
公开(公告)号：US08439023B2
公开(公告)日：2013-05-14
申请号：US12299279
申请日：2007-04-05
申请人： Konstantin Lindenthal , Johannes Kappeler , Holger Raaf , Thomas Breckle
发明人： Konstantin Lindenthal , Johannes Kappeler , Holger Raaf , Thomas Breckle
IPC分类号： H01F38/12 , H01F27/30 , H01F27/28
CPC分类号： H01F38/12 , H01F5/04 , H01F27/04 , H01F27/40 , H01F41/10 , H01F2038/122
摘要： An ignition coil, in particular for an internal combustion engine of a motor vehicle, having a secondary winding situated on a coil body for the production of a high voltage at a spark plug, having a contact sleeve that electrically contacts the secondary winding and that is capable of being pushed over an end area of the coil body and that has at least one contact element for the secondary winding, and having a holding-down element that can be pushed over the contact sleeve and that acts on the at least one contact element of the contact sleeve. In its end position, the holding-down element protrudes beyond the at least one contact element of the contact sleeve, seen in the axial direction of the coil body, and covers the at least one contact element.
摘要翻译：点火线圈，特别是用于机动车辆的内燃机的点火线圈，具有位于线圈主体上的用于在火花塞上产生高电压的次级绕组，具有与次级绕组电接触的接触套筒，能够被推压在线圈体的端部区域上，并且具有用于次级绕组的至少一个接触元件，并且具有能够被推靠在接触套筒上并且作用在至少一个接触元件上的压紧元件的接触套筒。在其端部位置，压紧元件突出超过接触套筒的至少一个接触元件，从线圈体的轴向方向看，并覆盖至少一个接触元件。

4. 发明申请

US20110237051A1 PROCESS AND APPARATUS FOR DEPOSITION OF MULTICOMPONENT SEMICONDUCTOR LAYERS 审中-公开
标题翻译：用于沉积多层半导体层的工艺和装置
公开(公告)号：US20110237051A1
公开(公告)日：2011-09-29
申请号：US12748368
申请日：2010-03-26
申请人： Kenneth Lee Hess , Simon Charles Stewart Thomas , Johannes Kappeler
发明人： Kenneth Lee Hess , Simon Charles Stewart Thomas , Johannes Kappeler
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/303 , H01J37/3244 , H01L21/0242 , H01L21/02538 , H01L21/0262
摘要： A deposition process involves the formation of multicomponent semiconductor layers, in particular III-V epitaxial layers, on a substrate. Due to pyrolytic decomposition inside the reaction chamber, one of the process gases forms a first decomposition product. Together with a second decomposition product of a second process gas, the decomposition products form a layer on the surface of a heated substrate and also adhere to surfaces of the process chamber. To remove these adherences, during an etching step a purge gas containing a reactive substance formed by free radicals is introduced into the process chamber. The etching step may be performed before or after the deposition process.
摘要翻译：沉积工艺涉及在衬底上形成多组分半导体层，特别是III-V外延层。由于反应室内的热分解，其中一种工艺气体形成第一分解产物。与第二工艺气体的第二分解产物一起，分解产物在加热的基材的表面上形成一层，并且还附着在处理室的表面上。为了去除这些粘附物，在蚀刻步骤期间，将含有由自由基形成的反应物质的吹扫气体引入处理室。蚀刻步骤可以在沉积工艺之前或之后进行。

5. 发明授权

US07201942B2 Coating method 有权
标题翻译：涂布方法
公开(公告)号：US07201942B2
公开(公告)日：2007-04-10
申请号：US10215858
申请日：2002-08-09
申请人： Holger Jurgensen , Johannes Kappeler , Gerd Strauch , Dietmar Schmitz
发明人： Holger Jurgensen , Johannes Kappeler , Gerd Strauch , Dietmar Schmitz
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C14/0015 , C23C14/12 , C23C14/22 , C23C14/228 , C23C16/006 , C23C16/4481 , C23C16/45565 , C23C16/4557 , C23C16/45572
摘要： A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
摘要翻译：公开了一种用于生产涂覆的基材例如OLED的方法，其中至少一层通过冷凝法和固体和/或流体前体沉积在至少一个基底上，特别是至少一个一个升华源用于至少一部分反应气体。本发明的特征在于，通过对前体源和基底之间的反应气体的温度控制，避免了反应气体在基底之前的冷凝。

6. 发明授权

US07056388B2 Reaction chamber with at least one HF feedthrough 有权
标题翻译：具有至少一个HF馈通的反应室
公开(公告)号：US07056388B2
公开(公告)日：2006-06-06
申请号：US10269157
申请日：2002-10-11
申请人： Walter Franken , Gerd Strauch , Johannes Kappeler , Holger Jurgensen
发明人： Walter Franken , Gerd Strauch , Johannes Kappeler , Holger Jurgensen
IPC分类号： C23C16/00
CPC分类号： H01J37/321 , H01J37/32577
摘要： A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.
摘要翻译：公开了一种用于进行基底涂布方法的反应室，在至少一个外壁中具有至少一个开口，其中HF馈通以压力或真空密封方式插入。反应室的特征还在于以下特征的组合：具有冷却剂通道的支撑板和用于HF线的至少一个开口; 设置在反应室中的区域中的HF线圈，在轴环上的第一密封; 在所述支撑板上的第二密封件和所述套环上的第一密封件之间的绝缘材料的第一盘; 在反应室外的区域中的螺纹，螺纹元件螺纹连接到螺纹上，所有螺纹元件都被构造成防止HF线和支撑板之间的电接触被建立或在HF线和支撑板之间产生电弧。

7. 发明申请

US20080251020A1 Cvd-Reactor with Slidingly Mounted Susceptor Holder 审中-公开
标题翻译： Cvd反应堆与滑动式的受体支架
公开(公告)号：US20080251020A1
公开(公告)日：2008-10-16
申请号：US12093940
申请日：2006-11-17
申请人： Walter Franken , Johannes Kappeler
发明人： Walter Franken , Johannes Kappeler
IPC分类号： C23C16/00
CPC分类号： C23C16/4584
摘要： The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors (7) for receiving substrates, comprising a substrate holder (6) that can be rotatably driven and forms the bottom of a process chamber (2), a RF heating system (22) disposed below the susceptor holder (6) and a gas inlet element (4) for introducing process gases into the process chamber. In order to further develop the generic device and to improve the production and advantages of use, it is proposed that the susceptor holder (6) lies in a sliding manner on an essentially IR- and/or RF-permeable supporting plate (14).
摘要翻译：本发明涉及一种用于在衬底上沉积至少一层的装置，该衬底具有一个或多个用于接收衬底的基座（7），包括可旋转地驱动并形成处理室（2）的底部的衬底保持器（6），设置在所述基座支架（6）下方的RF加热系统（22）和用于将处理气体引入所述处理室的气体入口元件（4）。为了进一步开发通用装置并提高使用的生产和优点，提出了基座支架（6）以基本上IR和/或RF-可渗透的支撑板（14）滑动的方式。

8. 发明申请

US20080092817A1 Cvd Reactor with Rf-Heated Process Chamber 有权
标题翻译：具有Rf加热处理室的Cvd反应器
公开(公告)号：US20080092817A1
公开(公告)日：2008-04-24
申请号：US11722686
申请日：2005-12-12
申请人： Johannes Kappeler , Frank Wischmeyer
发明人： Johannes Kappeler , Frank Wischmeyer
IPC分类号： C23C16/513
CPC分类号： C23C16/46 , C30B25/10
摘要： The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.
摘要翻译：本发明涉及沉积装置，特别是在至少一个基底上的结晶涂层，特别是晶体。所述装置包括由许多壁元件（1,2,3,4）组成的处理室（5），所述壁元件（1,2,3,4）导电并且端对端放置，从而形成触点（2'，2“，3'，3”）; 封闭处理室的壁元件（1,2,3,4）并由非导电材料制成的反应器壳体（6），以及围绕所述壁元件（1,2,3,4）的RF加热线圈，的治疗室。本发明的特征在于，在反应器壳体（6）和处理室的壁（1,2,3,4）之间植入大块单件式屏蔽加热管（8）。所述管道的材料是导电的，使得其被由RF线圈产生的RF场引起的涡流加热，并且使得其大大地吸收RF场并且加热壁（1,2,3,4）的壁治疗室。

9. 发明申请

US20090301450A1 IGNITION COIL, IN PARTICULAR, FOR AN INTERNAL COMBUSTION ENGINE OF A MOTOR VEHICLE 有权
标题翻译：点火线圈，特别适用于电动汽车的内燃机
公开(公告)号：US20090301450A1
公开(公告)日：2009-12-10
申请号：US12299279
申请日：2007-04-05
申请人： Konstantin Lindenthal , Johannes Kappeler , Holger Raaf , Thomas Breckle
发明人： Konstantin Lindenthal , Johannes Kappeler , Holger Raaf , Thomas Breckle
IPC分类号： H01F38/12
CPC分类号： H01F38/12 , H01F5/04 , H01F27/04 , H01F27/40 , H01F41/10 , H01F2038/122
摘要： An ignition coil, in particular for an internal combustion engine of a motor vehicle, having a secondary winding situated on a coil body for the production of a high voltage at a spark plug, having a contact sleeve that electrically contacts the secondary winding and that is capable of being pushed over an end area of the coil body and that has at least one contact element for the secondary winding, and having a holding-down element that can be pushed over the contact sleeve and that acts on the at least one contact element of the contact sleeve. In its end position, the holding-down element protrudes beyond the at least one contact element of the contact sleeve, seen in the axial direction of the coil body, and covers the at least one contact element.
摘要翻译：点火线圈，特别是用于机动车辆的内燃机的点火线圈，具有位于线圈主体上的用于在火花塞上产生高电压的次级绕组，具有与次级绕组电接触的接触套筒，能够被推压在线圈体的端部区域上，并且具有用于次级绕组的至少一个接触元件，并且具有能够被推靠在接触套筒上并且作用在至少一个接触元件上的压紧元件的接触套筒。在其端部位置，压紧元件突出超过接触套筒的至少一个接触元件，从线圈体的轴向方向看，并覆盖至少一个接触元件。

10. 发明申请

US20080206464A1 Method and Device for the Depositing of Gallium Nitrite Layers on a Sapphire Substrate and Associated Substrate Holder 审中-公开
标题翻译：在蓝宝石衬底和相关衬底支架上沉积亚硝酸盐层的方法和装置
公开(公告)号：US20080206464A1
公开(公告)日：2008-08-28
申请号：US11720604
申请日：2005-11-18
申请人： Johannes Kappeler
发明人： Johannes Kappeler
IPC分类号： B05B9/00 , C23C16/06
CPC分类号： C30B25/12 , C23C16/4581 , C23C16/4584 , C23C16/4585 , C23C16/56 , C30B29/40 , H01L21/68707 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： The invention relates to a device for holding at least one substrate (2) in a process chamber (3) of a reactor housing (15), comprising an attack area (4) for the attack of a handling device and a bearing area (5) upon which the substrate (2) rests with at least the edge (2″) thereof. In order to etch the deposited gallium nitrite layer in relation to the substrate, it is impinged upon with a laser jet from the bottom up. The bearing area (5) is transparent for the wavelength (1) of an optical substrate treatment process.
摘要翻译：本发明涉及一种用于将至少一个基板（2）保持在反应器壳体（15）的处理室（3）中的装置，包括用于处理装置和轴承区域（5）的攻击的攻击区域（4）），所述基板（2）至少至少位于所述边缘（2“）上。为了蚀刻相对于衬底的沉积的亚硝酸镓层，它被从下向上的激光射流冲击。轴承区域（5）对于光学基板处理工艺的波长（1）是透明的。

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