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1. 发明授权

US09436080B2 Method and apparatus for correcting errors on a wafer processed by a photolithographic mask 有权
标题翻译：用于校正由光刻掩模处理的晶片上的误差的方法和装置
公开(公告)号：US09436080B2
公开(公告)日：2016-09-06
申请号：US13994556
申请日：2011-12-02
申请人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
发明人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
IPC分类号： G03B27/68 , G03B27/62 , G03F1/72 , G03F1/84 , G03F7/20
CPC分类号： G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
摘要： The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
摘要翻译：本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。

2. 发明申请

US20140036243A1 METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK 有权
标题翻译：用于校正由光刻胶掩模处理的波形上的误差的方法和装置
公开(公告)号：US20140036243A1
公开(公告)日：2014-02-06
申请号：US13994556
申请日：2011-12-02
申请人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
发明人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
IPC分类号： G03F1/72
CPC分类号： G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
摘要： The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
摘要翻译：本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。

3. 发明申请

US20130263061A1 Global Landmark Method For Critical Dimension Uniformity Reconstruction 有权
标题翻译：关键维度统一重构的全球地标法
公开(公告)号：US20130263061A1
公开(公告)日：2013-10-03
申请号：US13878017
申请日：2011-10-05
申请人： Vladimir Dmitriev , Ofir Sharoni
发明人： Vladimir Dmitriev , Ofir Sharoni
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F7/70508 , G03F7/70625
摘要： Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension.
摘要翻译：可以通过测量衬底上的至少第一类型的特定特征和第二类型特定特征的属性来处理与衬底相关联的数据。在衬底上的第一多个位置处测量第一类型的特征，以产生第一组测量值，并且在衬底上的第二多个位置处测量第二类型的特征，以产生第二组测量值，其中第一组和第二组测量值受到衬底的临界尺寸变化的影响。基于组合所述至少第一组和第二组测量值来定义组合测量功能。在与另一组或其它测量值组合合之前，将至少一组测量值变换，其中变换由一组系数定义。基于组合的测量功能和测量值与临界尺寸之间的预定关系来确定跨衬底的临界尺寸的变化。

4. 发明申请

US20130028505A1 ANALYSES OF MEASUREMENT DATA 有权
标题翻译：测量数据分析
公开(公告)号：US20130028505A1
公开(公告)日：2013-01-31
申请号：US13579505
申请日：2011-02-23
申请人： Vladimir Dmitriev , Ofir Sharoni , Erez Graitzer , Igor Varvaruk , Guy Ben-Zvi
发明人： Vladimir Dmitriev , Ofir Sharoni , Erez Graitzer , Igor Varvaruk , Guy Ben-Zvi
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70508 , G03F7/70616 , G03F7/70625
摘要： A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
摘要翻译：一种方法包括使用数据处理器相对于在光掩模上的各个位置处测量的参数的平均值显示横跨光掩模的参数的变化的信息。例如，信息可以包括数据点，并且可以基于测量值和多个测量值的平均值之间的比率来确定每个数据点。

5. 发明授权

US09134112B2 Critical dimension uniformity correction by scanner signature control 有权
标题翻译：通过扫描仪签名控制进行临界尺寸均匀性校正
公开(公告)号：US09134112B2
公开(公告)日：2015-09-15
申请号：US13579366
申请日：2011-02-23
申请人： Ofir Sharoni , Vladimir Dmitriev , Eran Chason , Guy Ben-Zvi , Igor Varvaruk
发明人： Ofir Sharoni , Vladimir Dmitriev , Eran Chason , Guy Ben-Zvi , Igor Varvaruk
IPC分类号： G03F1/76 , G01B11/00 , G03F1/00 , G03F1/48 , G03F7/20
CPC分类号： G01B11/00 , G03F1/144 , G03F1/48 , G03F1/84 , G03F7/70625
摘要： A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
摘要翻译：可以基于测量的晶片级临界尺寸均匀性分布和从光掩模对晶片级临界尺寸分布的贡献来确定对来自光刻系统的扫描仪的晶片级临界尺寸分布的贡献。可以测量穿过光掩模（162）的光透射（104），可以确定光掩模的透射率变化分布，并且可以确定对光掩模（162）对晶片级临界尺寸分布的贡献（132 ）基于光掩模的透射率变化分布。

6. 发明申请

US20130077101A1 CRITICAL DIMENSION UNIFORMITY CORRECTION BY SCANNER SIGNATURE CONTROL 有权
标题翻译： SCANNER签名控制的关键尺寸均匀校正
公开(公告)号：US20130077101A1
公开(公告)日：2013-03-28
申请号：US13579366
申请日：2011-02-23
申请人： Ofir Sharoni , Vladimir Dmitriev , Eran Chason , Guy Ben-Zvi , Igor Varvaruk
发明人： Ofir Sharoni , Vladimir Dmitriev , Eran Chason , Guy Ben-Zvi , Igor Varvaruk
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F1/144 , G03F1/48 , G03F1/84 , G03F7/70625
摘要： A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
摘要翻译：可以基于测量的晶片级临界尺寸均匀性分布和从光掩模对晶片级临界尺寸分布的贡献来确定对来自光刻系统的扫描仪的晶片级临界尺寸分布的贡献。可以测量穿过光掩模（162）的光透射（104），可以确定光掩模的透射率变化分布，并且可以确定对光掩模（162）对晶片级临界尺寸分布的贡献（132 ）基于光掩模的透射率变化分布。

7. 发明授权

US09207530B2 Analyses of measurement data 有权
标题翻译：测量数据分析
公开(公告)号：US09207530B2
公开(公告)日：2015-12-08
申请号：US13579505
申请日：2011-02-23
申请人： Vladimir Dmitriev , Ofir Sharoni , Erez Graitzer , Igor Varvaruk , Guy Ben-Zvi
发明人： Vladimir Dmitriev , Ofir Sharoni , Erez Graitzer , Igor Varvaruk , Guy Ben-Zvi
IPC分类号： G06K9/00 , G03F1/84 , G03F7/20
CPC分类号： G03F1/84 , G03F7/70508 , G03F7/70616 , G03F7/70625
摘要： A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
摘要翻译：一种方法包括使用数据处理器相对于在光掩模上的各个位置处测量的参数的平均值显示横跨光掩模的参数的变化的信息。例如，信息可以包括数据点，并且可以基于测量值和多个测量值的平均值之间的比率来确定每个数据点。

8. 发明授权

US08869076B2 Global landmark method for critical dimension uniformity reconstruction 有权
标题翻译：关键尺寸均匀性重建的全球标志性方法
公开(公告)号：US08869076B2
公开(公告)日：2014-10-21
申请号：US13878017
申请日：2011-10-05
申请人： Vladimir Dmitriev , Ofir Sharoni
发明人： Vladimir Dmitriev , Ofir Sharoni
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G06F17/5081 , G03F7/70508 , G03F7/70625
摘要： Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension.
摘要翻译：可以通过测量衬底上的至少第一类型的特定特征和第二类型特定特征的属性来处理与衬底相关联的数据。在衬底上的第一多个位置处测量第一类型的特征，以产生第一组测量值，并且在衬底上的第二多个位置处测量第二类型的特征，以产生第二组测量值，其中第一组和第二组测量值受到衬底的临界尺寸变化的影响。基于组合所述至少第一组和第二组测量值来定义组合测量功能。在与另一组或其它测量值组合合之前，将至少一组测量值变换，其中变换由一组系数定义。基于组合的测量功能和测量值与临界尺寸之间的预定关系来确定跨衬底的临界尺寸的变化。

9. 发明申请

US20150085269A1 METHOD AND APPARATUS FOR LOCALLY DEFORMING AN OPTICAL ELEMENT FOR PHOTOLITHOGRAPHY 有权
标题翻译：用于局部变形光刻元件的方法和装置
公开(公告)号：US20150085269A1
公开(公告)日：2015-03-26
申请号：US14238803
申请日：2012-08-21
申请人： Vladimir Dmitriev , Uri Stern
发明人： Vladimir Dmitriev , Uri Stern
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , B82Y10/00 , B82Y40/00 , G03F1/60 , G03F1/72 , G03F7/0002 , G03F7/70025
摘要： The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.
摘要翻译：本发明涉及一种用于根据预定变形形式局部变形用于光刻的光学元件的方法，包括：（a）产生至少一个具有至少一个激光束参数的激光脉冲; 和（b）将所述至少一个激光脉冲引导到所述光学元件上，其中所述激光脉冲的所述至少一个激光束参数被选择以产生所述预定变形形式。

10. 发明申请

US20120009511A1 METHOD AND APPARATUS FOR CORRECTING ERRORS OF A PHOTOLITHOGRAPHIC MASK 有权
标题翻译：用于校正光刻掩模误差的方法和装置
公开(公告)号：US20120009511A1
公开(公告)日：2012-01-12
申请号：US13179799
申请日：2011-07-11
申请人： Vladimir Dmitriev
发明人： Vladimir Dmitriev
IPC分类号： G03F1/00 , B29C35/08
CPC分类号： G03F1/72 , G03F1/84 , G03F7/70466 , G03F7/70625
摘要： A method for correcting a plurality of errors of a photolithographic mask, comprising optimizing first parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask, and correcting the plurality of errors by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters, wherein the first and the second parameters are simultaneously optimized in a joint optimization process.
摘要翻译：一种用于校正光刻掩模的多个误差的方法，包括优化光刻掩模的成像变换的第一参数和局部定向到光刻掩模上的激光束的第二参数，以及通过应用成像变换来校正多个误差使用优化的第一参数并且使用优化的第二参数将激光束局部地引导到光刻掩模上，其中在联合优化过程中同时优化第一和第二参数。

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