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    • 3. 发明申请
    • Resistor having parallel structure and method of fabricating the same
    • 具有平行结构的电阻器及其制造方法
    • US20110273266A1
    • 2011-11-10
    • US12923574
    • 2010-09-28
    • Mi Jin ParkYoung Do KweonJin Gu Kim
    • Mi Jin ParkYoung Do KweonJin Gu Kim
    • H01C1/012H01C17/06
    • H01C7/003H01C1/01H01C7/06Y10T29/49082Y10T29/49099
    • There are provided a resistor and a method of fabricating the same. More particularly, there are provided a resistor having a parallel structure capable of easily implementing a resistance value when forming a resistor directly on a wafer during a wafer process, and a method of fabricating the same.The resistor includes: a substrate; a lower resistant material layer formed on the upper portion of the substrate; an insulating layer to be stacked on the upper portion of the lower resistant material layer; an upper resistant material layer to be stacked on the upper portion of the insulating layer; and two penetration parts vertically penetrating through the insulating layer, wherein the penetration part is filled with a resistant material having the same component as that of the lower resistant material layer and the upper resistant material layer to electrically connect the upper resistant material layer to the lower resistant material layer.
    • 提供了一种电阻器及其制造方法。 更具体地说,提供了一种具有平行结构的电阻器及其制造方法,该并联结构能够在晶片工艺期间直接在晶片上形成电阻时容易地实现电阻值。 电阻器包括:基板; 在所述基板的上部形成有较低阻力的材料层; 绝缘层,堆叠在下阻抗材料层的上部; 层叠在绝缘层的上部的上部电阻材料层; 和穿过绝缘层的两个穿透部分,其中穿透部分填充有与下阻力材料层和上阻力材料层具有相同成分的电阻材料,以将上部阻力材料层与下部电阻材料层电连接 耐材料层。