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1. 发明授权

US08654491B2 Low voltage ESD clamping using high voltage devices 有权
标题翻译：使用高压器件的低压ESD钳位
公开(公告)号：US08654491B2
公开(公告)日：2014-02-18
申请号：US13437475
申请日：2012-04-02
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H02H3/22
CPC分类号： H02H9/046
摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including a trigger element. A second electrical path extends between the first and second circuit nodes. The second electrical path includes a shunt element. A switching element is configured to trigger current flow through the shunt element based on both a state of the trigger element and a state of the switching element.
摘要翻译：一些实施例涉及静电放电（ESD）保护装置。 ESD保护装置包括在第一和第二电路节点之间延伸并且包括触发元件的第一电路径。第二电路在第一和第二电路节点之间延伸。第二电路包括分路元件。开关元件被配置为基于触发元件的状态和开关元件的状态触发通过分流元件的电流。

2. 发明申请

US20140008733A1 DRAIN EXTENDED MOS DEVICE FOR BULK FINFET TECHNOLOGY 有权
标题翻译：用于大容量FINFET技术的漏极扩展MOS器件
公开(公告)号：US20140008733A1
公开(公告)日：2014-01-09
申请号：US13540762
申请日：2012-07-03
申请人： Mayank Shrivastava , Harald Gossner
发明人： Mayank Shrivastava , Harald Gossner
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823821 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L29/66545 , H01L29/7835 , H01L29/7851
摘要： Some aspects relate to a FinFET that includes a semiconductor fin disposed over a semiconductor substrate and extending laterally between a source region and a drain region. A shallow trench isolation (STI) region laterally surrounds a lower portion of the semiconductor fin, and an upper portion of the semiconductor fin remains above the STI region. A gate electrode traverses over the semiconductor fin to define a channel region in the semiconductor fin under the conductive gate electrode. A punch-through blocking region can extend between the source region and the channel region in the lower portion of the semiconductor fin. A drain extension region can extend between the drain region and the channel region in the lower portion of the semiconductor fin. Other devices and methods are also disclosed.
摘要翻译：一些方面涉及FinFET，其包括设置在半导体衬底上并在源极区域和漏极区域之间横向延伸的半导体鳍片。浅沟槽隔离（STI）区域横向地围绕半导体鳍片的下部，并且半导体鳍片的上部保持在STI区域上方。栅电极穿过半导体鳍片，以在导电栅电极下面的半导体鳍片中限定沟道区。穿通阻挡区域可以在半导体鳍片的下部中的源极区域和沟道区域之间延伸。漏极延伸区域可以在半导体鳍片的下部中的漏极区域和沟道区域之间延伸。还公开了其它装置和方法。

3. 发明授权

US08354710B2 Field-effect device and manufacturing method thereof 有权
标题翻译：现场效应装置及其制造方法
公开(公告)号：US08354710B2
公开(公告)日：2013-01-15
申请号：US12188774
申请日：2008-08-08
申请人： Mayank Shrivastava , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
发明人： Mayank Shrivastava , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
IPC分类号： H01L29/76 , H01L29/94 , H01L27/10 , H01L31/062 , H01L31/113
CPC分类号： H01L27/0266 , H01L21/26513 , H01L21/26586 , H01L21/76224 , H01L29/0653 , H01L29/0834 , H01L29/0847 , H01L29/0878 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/66537 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7816 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.
摘要翻译：实施例涉及一种场效应晶体管，其包括主体区域，第一导电类型的第一源极/漏极区域，第一导电类型的第二源极/漏极区域和与第一源极/漏极所述口袋植入区域是第二导电类型，其中所述第二导电类型不同于所述第一导电类型。身体区域物理地接触口袋植入区域。

4. 发明申请

US20140097465A1 SILICON CONTROLLED RECTIFIER (SCR) DEVICE FOR BULK FINFET TECHNOLOGY 有权
标题翻译：用于大容量FINFET技术的硅控制整流器（SCR）器件
公开(公告)号：US20140097465A1
公开(公告)日：2014-04-10
申请号：US13646799
申请日：2012-10-08
申请人： Mayank Shrivastava , Harald Gossner
发明人： Mayank Shrivastava , Harald Gossner
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L27/0817 , H01L21/845 , H01L27/1211
摘要： Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an STI region that laterally surrounds a base portion of a semiconductor fin. An anode region, which has a first conductivity type, and a cathode region, which has a second conductivity type, are arranged in an upper portion of the semiconductor fin. A first doped base region, which has the second conductivity type, is arranged in the base of the fin underneath the anode region. A second doped base region, which has the first conductivity type, is arranged in the base of the fin underneath the cathode region. A current control unit is arranged between the anode region and the cathode region. The current control unit is arranged to selectively enable and disable current flow in the upper portion of the fin based on a trigger signal. Other devices and methods are also disclosed.
摘要翻译：一些方面涉及设置在半导体衬底上的半导体器件。该器件包括横向围绕半导体鳍片的基底部分的STI区域。具有第一导电类型的阳极区域和具有第二导电类型的阴极区域布置在半导体鳍片的上部。具有第二导电类型的第一掺杂基极区布置在阳极区域下方的翅片的底部。具有第一导电类型的第二掺杂基区布置在阴极区下方的鳍的底部。电流控制单元设置在阳极区域和阴极区域之间。电流控制单元被布置为基于触发信号来选择性地启用和禁止鳍的上部中的电流。还公开了其它装置和方法。

5. 发明授权

US08643090B2 Semiconductor devices and methods for manufacturing a semiconductor device 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US08643090B2
公开(公告)日：2014-02-04
申请号：US12408839
申请日：2009-03-23
申请人： Mayank Shrivastava , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
发明人： Mayank Shrivastava , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
IPC分类号： H01L29/66
CPC分类号： H01L29/0653 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66659 , H01L29/7835
摘要： In various embodiments, a semiconductor device is provided. The semiconductor device may include a first source/drain region, a second source/drain region, an active region electrically coupled between the first source/drain region and the second source/drain region, a trench disposed between the second source/drain region and at least a portion of the active region, a first isolation layer disposed over the bottom and the sidewalls of the trench, electrically conductive material disposed over the isolation layer in the trench, a second isolation layer disposed over the active region, and a gate region disposed over the second isolation layer. The electrically conductive material may be coupled to an electrical contact.
摘要翻译：在各种实施例中，提供半导体器件。半导体器件可以包括第一源极/漏极区域，第二源极/漏极区域，电耦合在第一源极/漏极区域和第二源极/漏极区域之间的有源区域，设置在第二源极/漏极区域和第二源极/ 所述有源区的至少一部分，设置在所述沟槽的底部和所述侧壁上的第一隔离层，设置在所述沟槽中的所述隔离层上的导电材料，设置在所述有源区上的第二隔离层和栅极区设置在第二隔离层上。导电材料可以耦合到电接触。

6. 发明申请

US20130250461A1 Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices 有权
标题翻译：选择性电流泵浦以增强使用高压器件的低电压ESD钳位
公开(公告)号：US20130250461A1
公开(公告)日：2013-09-26
申请号：US13429577
申请日：2012-03-26
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046
摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit from an ESD event. The ESD protection device includes first and second trigger elements. Upon detecting an ESD pulse, the first trigger element provides a first trigger signal having a first pulse length. The second trigger element, upon detecting the ESD pulse, provides a second trigger signal having a second pulse length. The second pulse length is different from the first pulse length. A primary shunt shunts power of the ESD pulse away from the ESD susceptible circuit based on the first trigger signal. A current control element selectively pumps current due to the ESD pulse into a substrate of the primary shunt based on the second trigger signal.
摘要翻译：一些实施例涉及用于保护电路免受ESD事件的静电放电（ESD）保护装置。 ESD保护装置包括第一和第二触发元件。在检测到ESD脉冲时，第一触发元件提供具有第一脉冲长度的第一触发信号。第二触发元件在检测到ESD脉冲时提供具有第二脉冲长度的第二触发信号。第二脉冲长度与第一脉冲长度不同。基于第一触发信号，主分流器将ESD脉冲的功率分配离开ESD敏感电路。电流控制元件基于第二触发信号选择性地将由于ESD脉冲引起的电流泵送到主分流器的衬底中。

7. 发明授权

US08536648B2 Drain extended field effect transistors and methods of formation thereof 有权
公开(公告)号：US08536648B2
公开(公告)日：2013-09-17
申请号：US13020368
申请日：2011-02-03
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L29/76
CPC分类号： H01L29/1095 , H01L21/26513 , H01L27/088 , H01L29/0634 , H01L29/0642 , H01L29/0653 , H01L29/0847 , H01L29/0873 , H01L29/0878 , H01L29/1054 , H01L29/165 , H01L29/267 , H01L29/41775 , H01L29/45 , H01L29/456 , H01L29/665 , H01L29/66575 , H01L29/66659 , H01L29/78 , H01L29/7816 , H01L29/7835 , H01L29/7842
摘要： In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region.

8. 发明授权

US08963201B2 Tunable fin-SCR for robust ESD protection 有权
标题翻译：可调谐鳍片SCR，用于强大的ESD保护
公开(公告)号：US08963201B2
公开(公告)日：2015-02-24
申请号：US13411667
申请日：2012-03-05
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H01L29/66
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种硅控整流器（SCR）。 SCR包括在阳极和阴极之间延伸并且包括其间的结区域的纵向硅翅片。一个或多个第一横向翼片在位于阳极和接合区域之间的一个或多个相应的攻丝点处横穿纵向翅片。还公开了其它装置和方法。

9. 发明授权

US08785968B2 Silicon controlled rectifier (SCR) device for bulk FinFET technology 有权
标题翻译：用于散装FinFET技术的可控硅整流器（SCR）器件
公开(公告)号：US08785968B2
公开(公告)日：2014-07-22
申请号：US13646799
申请日：2012-10-08
申请人： Mayank Shrivastava , Harald Gossner
发明人： Mayank Shrivastava , Harald Gossner
IPC分类号： H01L29/66
CPC分类号： H01L27/0817 , H01L21/845 , H01L27/1211
摘要： Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an STI region that laterally surrounds a base portion of a semiconductor fin. An anode region, which has a first conductivity type, and a cathode region, which has a second conductivity type, are arranged in an upper portion of the semiconductor fin. A first doped base region, which has the second conductivity type, is arranged in the base of the fin underneath the anode region. A second doped base region, which has the first conductivity type, is arranged in the base of the fin underneath the cathode region. A current control unit is arranged between the anode region and the cathode region. The current control unit is arranged to selectively enable and disable current flow in the upper portion of the fin based on a trigger signal. Other devices and methods are also disclosed.
摘要翻译：一些方面涉及设置在半导体衬底上的半导体器件。该器件包括横向围绕半导体鳍片的基底部分的STI区域。具有第一导电类型的阳极区域和具有第二导电类型的阴极区域布置在半导体鳍片的上部。具有第二导电类型的第一掺杂基极区布置在阳极区域下方的翅片的底部。具有第一导电类型的第二掺杂基区布置在阴极区下方的鳍的底部。电流控制单元设置在阳极区域和阴极区域之间。电流控制单元被布置为基于触发信号来选择性地启用和禁止鳍的上部中的电流。还公开了其它装置和方法。

10. 发明授权

US08455947B2 Device and method for coupling first and second device portions 有权
标题翻译：用于联接第一和第二装置部分的装置和方法
公开(公告)号：US08455947B2
公开(公告)日：2013-06-04
申请号：US12388479
申请日：2009-02-18
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
IPC分类号： H01L29/00
CPC分类号： H01L27/0262 , H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： This disclosure relates to devices and methods relating to coupled first and second device portions.
摘要翻译：本公开涉及与耦合的第一和第二设备部分有关的设备和方法。

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