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1. 发明申请

US20130250461A1 Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices 有权
标题翻译：选择性电流泵浦以增强使用高压器件的低电压ESD钳位
公开(公告)号：US20130250461A1
公开(公告)日：2013-09-26
申请号：US13429577
申请日：2012-03-26
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046
摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit from an ESD event. The ESD protection device includes first and second trigger elements. Upon detecting an ESD pulse, the first trigger element provides a first trigger signal having a first pulse length. The second trigger element, upon detecting the ESD pulse, provides a second trigger signal having a second pulse length. The second pulse length is different from the first pulse length. A primary shunt shunts power of the ESD pulse away from the ESD susceptible circuit based on the first trigger signal. A current control element selectively pumps current due to the ESD pulse into a substrate of the primary shunt based on the second trigger signal.
摘要翻译：一些实施例涉及用于保护电路免受ESD事件的静电放电（ESD）保护装置。 ESD保护装置包括第一和第二触发元件。在检测到ESD脉冲时，第一触发元件提供具有第一脉冲长度的第一触发信号。第二触发元件在检测到ESD脉冲时提供具有第二脉冲长度的第二触发信号。第二脉冲长度与第一脉冲长度不同。基于第一触发信号，主分流器将ESD脉冲的功率分配离开ESD敏感电路。电流控制元件基于第二触发信号选择性地将由于ESD脉冲引起的电流泵送到主分流器的衬底中。

2. 发明授权

US08536648B2 Drain extended field effect transistors and methods of formation thereof 有权
公开(公告)号：US08536648B2
公开(公告)日：2013-09-17
申请号：US13020368
申请日：2011-02-03
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L29/76
CPC分类号： H01L29/1095 , H01L21/26513 , H01L27/088 , H01L29/0634 , H01L29/0642 , H01L29/0653 , H01L29/0847 , H01L29/0873 , H01L29/0878 , H01L29/1054 , H01L29/165 , H01L29/267 , H01L29/41775 , H01L29/45 , H01L29/456 , H01L29/665 , H01L29/66575 , H01L29/66659 , H01L29/78 , H01L29/7816 , H01L29/7835 , H01L29/7842
摘要： In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region.

3. 发明授权

US08963201B2 Tunable fin-SCR for robust ESD protection 有权
标题翻译：可调谐鳍片SCR，用于强大的ESD保护
公开(公告)号：US08963201B2
公开(公告)日：2015-02-24
申请号：US13411667
申请日：2012-03-05
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H01L29/66
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种硅控整流器（SCR）。 SCR包括在阳极和阴极之间延伸并且包括其间的结区域的纵向硅翅片。一个或多个第一横向翼片在位于阳极和接合区域之间的一个或多个相应的攻丝点处横穿纵向翅片。还公开了其它装置和方法。

4. 发明授权

US08455947B2 Device and method for coupling first and second device portions 有权
标题翻译：用于联接第一和第二装置部分的装置和方法
公开(公告)号：US08455947B2
公开(公告)日：2013-06-04
申请号：US12388479
申请日：2009-02-18
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
IPC分类号： H01L29/00
CPC分类号： H01L27/0262 , H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： This disclosure relates to devices and methods relating to coupled first and second device portions.
摘要翻译：本公开涉及与耦合的第一和第二设备部分有关的设备和方法。

5. 发明申请

US20120199878A1 Drain Extended Field Effect Transistors and Methods of Formation Thereof 有权
标题翻译：排水扩展场效应晶体管及其形成方法
公开(公告)号：US20120199878A1
公开(公告)日：2012-08-09
申请号：US13020368
申请日：2011-02-03
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/1095 , H01L21/26513 , H01L27/088 , H01L29/0634 , H01L29/0642 , H01L29/0653 , H01L29/0847 , H01L29/0873 , H01L29/0878 , H01L29/1054 , H01L29/165 , H01L29/267 , H01L29/41775 , H01L29/45 , H01L29/456 , H01L29/665 , H01L29/66575 , H01L29/66659 , H01L29/78 , H01L29/7816 , H01L29/7835 , H01L29/7842
摘要： In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region.
摘要翻译：在本发明的实施例中，半导体器件包括具有第一掺杂类型的第一区域，具有设置在第一区域中的第一掺杂类型的沟道区域和具有第二掺杂类型的逆行阱。第二掺杂类型与第一掺杂类型相反。逆行井具有具有第一峰掺杂的较浅层和比第一峰掺杂高的第二峰掺杂的较深层。该装置还包括在逆行井上具有第二掺杂型的漏极区。延伸的漏极区域设置在逆行阱中，并且将沟道区域与漏极区域耦合。隔离区域设置在延伸漏极区域的栅极重叠区域和漏极区域之间。漏区的长度大于隔离区的深度。

6. 发明申请

US20120049279A1 High Voltage Semiconductor Devices 有权
标题翻译：高压半导体器件
公开(公告)号：US20120049279A1
公开(公告)日：2012-03-01
申请号：US12868434
申请日：2010-08-25
申请人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L27/12
CPC分类号： H01L27/1211 , H01L27/0727 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/1033 , H01L29/7831 , H01L29/7835 , H01L29/7836 , H01L29/78624
摘要： In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.
摘要翻译：在一个实施例中，半导体器件包括设置在衬底中的第一掺杂类型的第一源。第一掺杂型的第一漏极设置在衬底中。第一栅极区域设置在第一源极和第一漏极之间。第一掺杂类型的第一沟道区域设置在第一栅极区域的下方。第二掺杂类型与第一掺杂类型相反。第一掺杂类型的第一延伸区域设置在第一栅极和第一漏极之间。第一延伸区域是设置在基板中或上方的第一鳍片的一部分。第一隔离区域设置在第一延伸区域和第一漏极之间。第一掺杂类型的第一阱区设置在第一隔离区下。第一阱区域将第一延伸区域与第一漏极电耦合。

7. 发明申请

US20100207161A1 Device and Method for Coupling First and Second Device Portions 有权
标题翻译：用于耦合第一和第二装置部分的装置和方法
公开(公告)号：US20100207161A1
公开(公告)日：2010-08-19
申请号：US12388479
申请日：2009-02-18
申请人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
发明人： Mayank Shrivastava , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao , Maryam Shojaei Baghini
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L27/0262 , H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： This disclosure relates to devices and methods relating to coupled first and second device portions.
摘要翻译：本公开涉及与耦合的第一和第二设备部分有关的设备和方法。

8. 发明授权

US08664720B2 High voltage semiconductor devices 有权
标题翻译：高压半导体器件
公开(公告)号：US08664720B2
公开(公告)日：2014-03-04
申请号：US12868434
申请日：2010-08-25
申请人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
发明人： Mayank Shrivastava , Maryam Shojaei Baghini , Cornelius Christian Russ , Harald Gossner , Ramgopal Rao
IPC分类号： H01L29/76 , H01L29/94 , H01L27/01 , H01L27/12 , H01L31/062
CPC分类号： H01L27/1211 , H01L27/0727 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/0847 , H01L29/1033 , H01L29/7831 , H01L29/7835 , H01L29/7836 , H01L29/78624
摘要： In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.
摘要翻译：在一个实施例中，半导体器件包括设置在衬底中的第一掺杂类型的第一源。第一掺杂型的第一漏极设置在衬底中。第一栅极区域设置在第一源极和第一漏极之间。第一掺杂类型的第一沟道区域设置在第一栅极区域的下方。第二掺杂类型与第一掺杂类型相反。第一掺杂类型的第一延伸区域设置在第一栅极和第一漏极之间。第一延伸区域是设置在基板中或上方的第一鳍片的一部分。第一隔离区域设置在第一延伸区域和第一漏极之间。第一掺杂类型的第一阱区设置在第一隔离区下。第一阱区域将第一延伸区域与第一漏极电耦合。

9. 发明申请

US20130258534A1 LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES 有权
标题翻译：使用高压器件的低电压ESD钳位
公开(公告)号：US20130258534A1
公开(公告)日：2013-10-03
申请号：US13437475
申请日：2012-04-02
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H02H9/04
CPC分类号： H02H9/046
摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including a trigger element. A second electrical path extends between the first and second circuit nodes. The second electrical path includes a shunt element. A switching element is configured to trigger current flow through the shunt element based on both a state of the trigger element and a state of the switching element.
摘要翻译：一些实施例涉及静电放电（ESD）保护装置。 ESD保护装置包括在第一和第二电路节点之间延伸并且包括触发元件的第一电路径。第二电路在第一和第二电路节点之间延伸。第二电路包括分路元件。开关元件被配置为基于触发元件的状态和开关元件的状态触发通过分流元件的电流。

10. 发明申请

US20130229223A1 Tunable Fin-SCR for Robust ESD Protection 有权
标题翻译：可调谐Fin-SCR，用于强大的ESD保护
公开(公告)号：US20130229223A1
公开(公告)日：2013-09-05
申请号：US13411667
申请日：2012-03-05
申请人： Mayank Shrivastava , Christian Russ , Harald Gossner
发明人： Mayank Shrivastava , Christian Russ , Harald Gossner
IPC分类号： H03K17/72 , H01L29/74
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0692 , H01L29/1016 , H01L29/102 , H01L29/744
摘要： One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种硅控整流器（SCR）。 SCR包括在阳极和阴极之间延伸并且包括其间的结区域的纵向硅翅片。一个或多个第一横向翼片在位于阳极和接合区域之间的一个或多个相应的攻丝点处横穿纵向翅片。还公开了其它装置和方法。

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