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1. 发明授权

US08247312B2 Methods for printing an ink on a textured wafer surface 失效
标题翻译：在纹理晶片表面上印刷油墨的方法
公开(公告)号：US08247312B2
公开(公告)日：2012-08-21
申请号：US12108888
申请日：2008-04-24
申请人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
IPC分类号： H01L21/36
CPC分类号： H01L21/02532 , H01L21/0243 , H01L21/02601 , H01L21/02628 , H01L21/228 , H01L29/34 , H01L31/02168 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.
摘要翻译：公开了一种在配置有一组非圆形峰和一组非圆形谷的晶片表面上印刷油墨的方法。该方法包括使晶片包括至少一些非圆形峰值和区域中的至少一些非圆形谷部至蚀刻剂。该方法还包括在该区域上沉积墨，其中形成一组圆形峰和一组圆形谷。

2. 发明授权

US07718707B2 Method for preparing nanoparticle thin films 有权
标题翻译：制备纳米颗粒薄膜的方法
公开(公告)号：US07718707B2
公开(公告)日：2010-05-18
申请号：US11842466
申请日：2007-08-21
申请人： Maxim Kelman , Xuegeng Li , Pingrong Yu , Karel Vanheusden , David Jurbergs
发明人： Maxim Kelman , Xuegeng Li , Pingrong Yu , Karel Vanheusden , David Jurbergs
IPC分类号： B05D7/00 , B22F3/00 , B01F3/04 , C09K3/30
CPC分类号： C01B33/021 , B22F1/0022 , B22F9/12 , B22F2999/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , Y10T428/12014 , B22F2202/13
摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.
摘要翻译：公开了一组纳米颗粒。该组纳米颗粒的每个纳米颗粒由一组以基本上球形构型排列的IV族原子组成。该组纳米颗粒的每个纳米颗粒进一步具有约1.0至约2.0的球形度; 约4nm至约100nm的直径; 并且烧结温度小于该组IV族原子的熔融温度。

3. 发明申请

US20090014423A1 CONCENTRIC FLOW-THROUGH PLASMA REACTOR AND METHODS THEREFOR 审中-公开
标题翻译：浓缩流动等离子体反应器及其方法
公开(公告)号：US20090014423A1
公开(公告)日：2009-01-15
申请号：US11775509
申请日：2007-07-10
申请人： Xuegeng Li , Maxim Kelman , Mason Terry , Elena Rogojina , Eric Schiff , Karel Vanheusden
发明人： Xuegeng Li , Maxim Kelman , Mason Terry , Elena Rogojina , Eric Schiff , Karel Vanheusden
IPC分类号： C22C1/00 , B22F9/14 , B23K31/00
CPC分类号： H05H1/2406 , B01J19/088 , B01J2219/0809 , B01J2219/083 , B01J2219/0841 , B01J2219/0869 , B01J2219/0875 , B01J2219/0883 , B01J2219/0894 , B82Y30/00 , C01B33/029 , H01J37/32541 , H01J37/32568
摘要： The present invention provides a radiofrequency plasma apparatus for the production of nanoparticles and method for producing nanoparticles using the apparatus. The apparatus is designed to provide high throughput and makes the continuous production of bulk quantities of high-quality crystalline nanoparticles possible. The electrode assembly of the plasma apparatus includes an outer electrode and a central electrode arranged in a concentric relationship to define an annular flow channel between the electrodes.
摘要翻译：本发明提供一种用于生产纳米颗粒的射频等离子体装置和使用该装置制备纳米颗粒的方法。该设备被设计成提供高通量并且使得可以连续生产大量高质量的结晶纳米颗粒。等离子体装置的电极组件包括以同心关系布置的外电极和中心电极，以在电极之间限定环形流动通道。

4. 发明申请

US20120009721A1 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
标题翻译：第四组纳米晶体结及其器件
公开(公告)号：US20120009721A1
公开(公告)日：2012-01-12
申请号：US13239806
申请日：2011-09-22
申请人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
IPC分类号： H01L31/18
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

5. 发明申请

US20110003466A1 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON 审中-公开
标题翻译：用多孔硅形成多层结的方法
公开(公告)号：US20110003466A1
公开(公告)日：2011-01-06
申请号：US12794188
申请日：2010-06-04
申请人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
发明人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模，所述掩模包括暴露的掩模区域和未暴露的掩模区域。该方法还包括将掩模暴露于蚀刻剂，其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。该方法还包括在第一温度和第一时间段内，使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源，其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域，并且其中第一薄层电阻显着小于第二片电阻。

6. 发明申请

US20100178718A1 METHODS FOR IMPROVING PERFORMANCE VARIATION OF A SOLAR CELL MANUFACTURING PROCESS 审中-公开
标题翻译：改进太阳能电池制造工艺性能变化的方法
公开(公告)号：US20100178718A1
公开(公告)日：2010-07-15
申请号：US12352857
申请日：2009-01-13
申请人： Maxim Kelman , Karel Vanheusden
发明人： Maxim Kelman , Karel Vanheusden
IPC分类号： H01L21/66
CPC分类号： H01L31/022433 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for optimizing a solar cell manufacturing process is described. The method includes determining a reference finger spacing value and a reference bulk lifetime for the solar cell manufacturing process. The method also includes measuring an actual bulk lifetime of a wafer with an in-line measurement tool. The method further includes calculating an optimal finger spacing value with a computer coupled to the in-line measurement tool, the optimal finger spacing value being the product of the reference finger spacing value and a square root of the actual bulk lifetime divided by the square root of the reference bulk lifetime. The method further includes forming a junction on the wafer, and depositing a set of busbars and a set of fingers on the wafer with a metal deposition device, wherein a distance between a first finger and a second finger of the set of fingers is about the optimal finger spacing value.
摘要翻译：描述了一种用于优化太阳能电池制造过程的方法。该方法包括确定太阳能电池制造过程的参考手指间隔值和参考体积寿命。该方法还包括使用在线测量工具测量晶片的实际体积寿命。该方法还包括利用耦合到在线测量工具的计算机计算最佳手指间隔值，最佳手指间隔值是参考手指间隔值和实际体寿命的平方根除以平方根的乘积的参考批量寿命。该方法还包括在晶片上形成结，以及用金属沉积装置在晶片上沉积一组汇流条和一组指状物，其中该组手指的第一手指与第二手指之间的距离约为最佳手指间距值。

7. 发明授权

US08471170B2 Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor 有权
标题翻译：用于在流通式等离子体反应器中生产IV族纳米颗粒的方法和装置
公开(公告)号：US08471170B2
公开(公告)日：2013-06-25
申请号：US12113451
申请日：2008-05-01
申请人： Xuegeng Li , Christopher Alcantara , Maxim Kelman , Elena Rogojina , Eric Schiff , Mason Terry , Karel Vanheusden
发明人： Xuegeng Li , Christopher Alcantara , Maxim Kelman , Elena Rogojina , Eric Schiff , Mason Terry , Karel Vanheusden
IPC分类号： B23K10/00 , H01J7/24
CPC分类号： B82Y30/00 , B01J19/088 , B01J2219/0809 , B01J2219/083 , B01J2219/0841 , B01J2219/0869 , B01J2219/0875 , B01J2219/0883 , B01J2219/0894 , C01B33/029 , H01J37/32541 , H01J37/32568
摘要： A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.
摘要翻译：公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。所述装置包括外电介质管，所述外管包括外管内表面和外管外表面，其中所述外管内表面具有外管内表面蚀刻速率。所述装置还包括内部介电管，所述内部介电管包括内管外表面，其中所述外管内表面和所述内管外表面限定环形通道，并且其中所述内管外表面具有内管外表面表面蚀刻速率。该装置还包括第一外电极，第一外电极具有设置在外管外表面上的第一外电极内表面。所述装置还包括第一中心电极，所述第一中心电极设置在所述内部电介质管内，所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。

8. 发明申请

US20100275982A1 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
标题翻译：第四组纳米晶体结及其器件
公开(公告)号：US20100275982A1
公开(公告)日：2010-11-04
申请号：US12029838
申请日：2008-02-12
申请人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
IPC分类号： H01L31/0352
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

9. 发明申请

US20090325336A1 METHODS FOR PRINTING AN INK ON A TEXTURED WAFER SURFACE 失效
标题翻译：在纹理表面上打印墨水的方法
公开(公告)号：US20090325336A1
公开(公告)日：2009-12-31
申请号：US12108888
申请日：2008-04-24
申请人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
IPC分类号： H01L31/18 , H01L21/465 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/0243 , H01L21/02601 , H01L21/02628 , H01L21/228 , H01L29/34 , H01L31/02168 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.
摘要翻译：公开了一种在配置有一组非圆形峰和一组非圆形谷的晶片表面上印刷油墨的方法。该方法包括使晶片包括至少一些非圆形峰值和区域中的至少一些非圆形谷部至蚀刻剂。该方法还包括在该区域上沉积墨，其中形成一组圆形峰和一组圆形谷。

10. 发明申请

US20090044661A1 METHODS AND APPARATUS FOR THE PRODUCTION OF GROUP IV NANOPARTICLES IN A FLOW-THROUGH PLASMA REACTOR 有权
标题翻译：在流动等离子体反应器中生产IV族纳米颗粒的方法和装置
公开(公告)号：US20090044661A1
公开(公告)日：2009-02-19
申请号：US12113451
申请日：2008-05-01
申请人： Xuegeng Li , Christopher Alcantara , Maxim Kelman , Elena Rogojina , Eric Schiff , Mason Terry , Karel Vanheusden
发明人： Xuegeng Li , Christopher Alcantara , Maxim Kelman , Elena Rogojina , Eric Schiff , Mason Terry , Karel Vanheusden
IPC分类号： B22F9/12 , B22F9/14 , C22C1/00 , H05H1/46 , H05H1/48
CPC分类号： B82Y30/00 , B01J19/088 , B01J2219/0809 , B01J2219/083 , B01J2219/0841 , B01J2219/0869 , B01J2219/0875 , B01J2219/0883 , B01J2219/0894 , C01B33/029 , H01J37/32541 , H01J37/32568
摘要： A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.
摘要翻译：公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。所述装置包括外电介质管，所述外管包括外管内表面和外管外表面，其中所述外管内表面具有外管内表面蚀刻速率。所述装置还包括内部介电管，所述内部介电管包括内管外表面，其中所述外管内表面和所述内管外表面限定环形通道，并且其中所述内管外表面具有内管外表面表面蚀刻速率。该装置还包括第一外电极，第一外电极具有设置在外管外表面上的第一外电极内表面。所述装置还包括第一中心电极，所述第一中心电极设置在所述内部电介质管内，所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。

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