专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130278372A1 Semiconductor Component with Coreless Transformer 有权
标题翻译：无芯变压器半导体元件
公开(公告)号：US20130278372A1
公开(公告)日：2013-10-24
申请号：US13452075
申请日：2012-04-20
申请人： Matthias Stecher , Markus Menath , Andreas Zankl , Werner Robl
发明人： Matthias Stecher , Markus Menath , Andreas Zankl , Werner Robl
IPC分类号： H01F5/00
CPC分类号： H01L28/10 , H01F27/2804 , H01F2017/0086 , H01L23/5225 , H01L23/5227 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.
摘要翻译：半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

2. 发明授权

US08665054B2 Semiconductor component with coreless transformer 有权
标题翻译：具有无芯变压器的半导体元件
公开(公告)号：US08665054B2
公开(公告)日：2014-03-04
申请号：US13452075
申请日：2012-04-20
申请人： Matthias Stecher , Markus Menath , Andreas Zankl , Werner Robl
发明人： Matthias Stecher , Markus Menath , Andreas Zankl , Werner Robl
IPC分类号： H01F5/00 , H01L27/08
CPC分类号： H01L28/10 , H01F27/2804 , H01F2017/0086 , H01L23/5225 , H01L23/5227 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.
摘要翻译：半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

3. 发明申请

US20130280879A1 Method for Producing a Conductor Line 有权
标题翻译：生产导线的方法
公开(公告)号：US20130280879A1
公开(公告)日：2013-10-24
申请号：US13452044
申请日：2012-04-20
申请人： Matthias Stecher , Markus Menath , Andreas Zankl , Anja Gissibl
发明人： Matthias Stecher , Markus Menath , Andreas Zankl , Anja Gissibl
IPC分类号： H01L21/02
CPC分类号： H01L21/76804 , H01L21/311 , H01L21/31144 , H01L21/3115 , H01L21/322 , H01L21/44 , H01L21/743 , H01L21/76802 , H01L23/5222 , H01L23/5225 , H01L23/5227 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.
摘要翻译：公开了一种用于制造半导体部件的圆形导线的方法。在该方法中，提供部分完成的半导体部件。部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。还提供了一种蚀刻剂。在顶侧设置介电层。介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。通过用导电材料填充加宽的沟槽，形成导体线。

4. 发明授权

US09214424B2 Method for producing a conductor line 有权
标题翻译：导线生产方法
公开(公告)号：US09214424B2
公开(公告)日：2015-12-15
申请号：US13452044
申请日：2012-04-20
申请人： Matthias Stecher , Markus Menath , Andreas Zankl , Anja Gisslbl
发明人： Matthias Stecher , Markus Menath , Andreas Zankl , Anja Gisslbl
IPC分类号： H01L21/302 , H01L21/461 , H01L23/522 , H01L21/311 , H01L21/322 , H01L21/74 , H01L21/3115 , H01L23/528 , H01L23/532 , H01L21/768
CPC分类号： H01L21/76804 , H01L21/311 , H01L21/31144 , H01L21/3115 , H01L21/322 , H01L21/44 , H01L21/743 , H01L21/76802 , H01L23/5222 , H01L23/5225 , H01L23/5227 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.
摘要翻译：公开了一种用于制造半导体部件的圆形导线的方法。在该方法中，提供部分完成的半导体部件。部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。还提供了一种蚀刻剂。在顶侧设置介电层。介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。通过用导电材料填充加宽的沟槽，形成导体线。

5. 发明授权

US08509269B2 Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said method 有权
标题翻译：用于制造石英玻璃的圆柱形光学部件的方法和通过所述方法获得的光学活性部件
公开(公告)号：US08509269B2
公开(公告)日：2013-08-13
申请号：US12998968
申请日：2009-12-02
申请人： Peter Bauer , Karsten Braeuer , Marco Flach , Andreas Langner , Richard Schmidt , Clemens Schmitt , Gerhard Schoetz , Matthias Stecher
发明人： Peter Bauer , Karsten Braeuer , Marco Flach , Andreas Langner , Richard Schmidt , Clemens Schmitt , Gerhard Schoetz , Matthias Stecher
IPC分类号： H01S3/30
CPC分类号： H01S3/0602 , C03B23/207 , C03B37/01245 , C03B2201/12 , C03B2203/02 , C03B2203/18 , C03B2203/34 , H01S3/063 , H01S3/06708 , H01S3/06745 , H01S3/094003 , H01S3/094007 , H01S3/1603 , H01S3/176
摘要： Cylindrical optical components of quartz glass are known, which have an inner zone made of an inner zone glass, which extends in the direction of the longitudinal axis and is surrounded by a jacket zone made of a jacket zone glass, the average wall thickness thereof varying at least over a part of its length in the direction of the longitudinal axis of the component. The aim of the invention is to provide a method that allows a simple and cost-effective production of such an optical component from quartz glass. A method is proposed according to the invention, comprising the following method steps: (a) providing a first parison made of an inner zone glass, which has a first contact surface on the end face, said contact surface having a conical external contour; (b) providing a second parison from the jacket zone glass; (c) embedding the contact surface with a conical external contour into the jacket zone glass and welding the contact surface to the jacket zone glass, thereby forming a composite parison which has a cone-shaped inner zone area of inner zone glass in a contact area, said inner zone area being surrounded by a jacket zone area having the shape of an inner cone; and (d) elongation of the composite parison to form the optical component or a preproduct of the component.
摘要翻译：石英玻璃的圆柱形光学部件是已知的，其具有由内部区域玻璃制成的内部区域，该内部区域在纵向轴线的方向上延伸并被由护套区域玻璃制成的护套区域围绕，其平均壁厚度变化至少在部件的纵向轴线方向上的长度的一部分上。本发明的目的是提供一种允许从石英玻璃简单且成本有效地生产这种光学部件的方法。根据本发明提出了一种方法，包括以下方法步骤：（a）提供由内区玻璃制成的第一型坯，其在端面具有第一接触表面，所述接触表面具有锥形外轮廓; （b）从夹克区玻璃提供第二型坯; （c）将具有锥形外部轮廓的接触表面嵌入夹套区玻璃中并将接触表面焊接到护套区域玻璃上，由此形成复合型坯，其在接触区域中具有内部区域玻璃的锥形内部区域所述内区域由具有内锥形状的护套区域区域包围; 和（d）复合型坯的伸长以形成光学部件或部件的前产物。

6. 发明申请

US20120175730A1 INTEGRATED CIRCUIT AND PRODUCTION METHOD 有权
标题翻译：集成电路和生产方法
公开(公告)号：US20120175730A1
公开(公告)日：2012-07-12
申请号：US13424792
申请日：2012-03-20
申请人： Matthias Stecher
发明人： Matthias Stecher
IPC分类号： H01L29/06 , H01L21/762 , H01L21/761
CPC分类号： H01L21/761 , H01L21/823878 , H01L27/0629 , H01L29/7809 , H01L29/7811
摘要： An integrated circuit and a production method is disclosed. One embodiment forms reverse-current complexes in a semiconductor well, so that the charge carriers, forming a damaging reverse current, cannot flow into the substrate.
摘要翻译：公开了集成电路和制造方法。一个实施例在半导体阱中形成反向电流复合物，使得形成有害的反向电流的电荷载流子不能流入衬底。

7. 发明申请

US20120025384A1 ELECTRONIC DEVICE AND METHOD FOR PRODUCTION 有权
标题翻译：电子设备及其生产方法
公开(公告)号：US20120025384A1
公开(公告)日：2012-02-02
申请号：US13267385
申请日：2011-10-06
申请人： Khalil Hosseini , Matthias Stecher
发明人： Khalil Hosseini , Matthias Stecher
IPC分类号： H01L23/52 , H01L21/50
CPC分类号： H01L24/48 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/81 , H01L24/85 , H01L2224/0347 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/73257 , H01L2224/81801 , H01L2224/85201 , H01L2224/85205 , H01L2224/85375 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20104 , H01L2924/20105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00014 , H01L2224/05164 , H01L2924/00 , H01L2924/013 , H01L2924/2075 , H01L2924/00012 , H01L2924/01006
摘要： An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.
摘要翻译：公开了一种用于生产的电子设备和方法。一个实施例提供了一种集成部件，其具有由铜或铜合金构成的第一层或者包含铜或铜合金的第一层，并且具有导电的第二层，其材料与第一层的材料不同，设置在第一层和第二层上。

8. 发明授权

US08093677B2 Semiconductor device and manufacturing method 有权
公开(公告)号：US08093677B2
公开(公告)日：2012-01-10
申请号：US12425988
申请日：2009-04-17
申请人： Matthias Stecher , Hans-Joachim Schulze , Thomas Neidhart
发明人： Matthias Stecher , Hans-Joachim Schulze , Thomas Neidhart
IPC分类号： H01L21/70
CPC分类号： H01L21/823878 , H01L21/26506 , H01L21/743 , H01L21/761 , H01L27/0251 , H01L27/0921 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and manufacturing method is disclosed. One embodiment provides a common substrate of a first conductivity type and at least two wells of a second conductivity type. A buried high resistivity region and at least an insulating structure is provided insulating the first well from the second well. The insulating structure extends through the buried high resistivity region and includes a conductive plug in Ohmic contact with the first semiconductor region. A method for forming an integrated semiconductor device is also provided.

9. 发明申请

US20110095364A1 SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：半导体器件和方法
公开(公告)号：US20110095364A1
公开(公告)日：2011-04-28
申请号：US12984910
申请日：2011-01-05
申请人： Matthias Stecher , Tobias Smorodin
发明人： Matthias Stecher , Tobias Smorodin
IPC分类号： H01L29/78 , H01L23/522 , H01L21/336
CPC分类号： H01L29/7809 , H01L23/4824 , H01L27/0922 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/41741 , H01L29/41758 , H01L29/7395 , H01L29/7398 , H01L29/7802 , H01L29/7816 , H01L2924/0002 , H03K17/0822 , H01L2924/00
摘要： A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.
摘要翻译：公开了半导体器件和方法。一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

10. 发明授权

US07888794B2 Semiconductor device and method 有权
标题翻译：半导体器件及方法
公开(公告)号：US07888794B2
公开(公告)日：2011-02-15
申请号：US12032760
申请日：2008-02-18
申请人： Matthias Stecher , Tobias Smorodin
发明人： Matthias Stecher , Tobias Smorodin
IPC分类号： H01L21/00 , H01L23/34
CPC分类号： H01L29/7809 , H01L23/4824 , H01L27/0922 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/41741 , H01L29/41758 , H01L29/7395 , H01L29/7398 , H01L29/7802 , H01L29/7816 , H01L2924/0002 , H03K17/0822 , H01L2924/00
摘要： A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.
摘要翻译：公开了半导体器件和方法。一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式