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1. 发明申请

US20140070246A1 LIGHT-EMITTING SEMICONDUCTOR COMPONENT 有权
标题翻译：发光半导体元件
公开(公告)号：US20140070246A1
公开(公告)日：2014-03-13
申请号：US14006304
申请日：2012-03-07
申请人： Matthias Sabathil , Andreas Plößl , Hans-Jürgen Lugauer , Alexander Linkov , Patrick Rode
发明人： Matthias Sabathil , Andreas Plößl , Hans-Jürgen Lugauer , Alexander Linkov , Patrick Rode
IPC分类号： H01L33/26
CPC分类号： H01L33/08 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/26 , H01L33/32 , H01L33/502 , H01L33/504
摘要： The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a shorter wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
摘要翻译：本发明涉及一种发光半导体部件，包括：第一半导体本体（1），其包括活性区（11），其中在发光半导体部件产生电磁辐射的操作期间，产生至少一些所述第一半导体本体（1）通过辐射出射表面（1a）离开所述第一半导体本体（1），以及 - 第二半导体本体（2），其适于将所述电磁辐射转换成具有较短波长的转换的电磁辐射，其中所述第一半导体主体（1）和第二半导体本体（2）彼此分开制造， - 第二半导体体（2）是电不活动的，并且第二半导体本体（2）与辐射出口表面 1a），并且在没有连接装置的情况下附接到第一半导体本体（1）。

2. 发明授权

US09331243B2 Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies 有权
标题翻译：通过连接第一和第二半导体本体产生发光半导体部件
公开(公告)号：US09331243B2
公开(公告)日：2016-05-03
申请号：US14006304
申请日：2012-03-07
申请人： Matthias Sabathil , Andreas Plöβl , Hans-Jürgen Lugauer , Alexander Linkov , Patrick Rode
发明人： Matthias Sabathil , Andreas Plöβl , Hans-Jürgen Lugauer , Alexander Linkov , Patrick Rode
IPC分类号： H01L21/00 , H01L33/26 , H01L33/50 , H01L33/00
CPC分类号： H01L33/08 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/26 , H01L33/32 , H01L33/502 , H01L33/504
摘要： The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other, —the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
摘要翻译：本发明涉及一种发光半导体部件，包括：第一半导体本体（1），其包括活性区（11），其中在发光半导体部件产生电磁辐射的操作期间，产生至少一些所述第一半导体本体（1）通过辐射出射表面（1a）离开所述第一半导体本体（1），以及 - 第二半导体本体（2），其适于将所述电磁辐射转换为具有较长波长的转换电磁辐射，其中，所述第一半导体主体（1）和第二半导体本体（2）彼此分开制造， - 第二半导体体（2）是电不活动的，并且第二半导体本体（2）与辐射出口表面 1a），并且在没有连接装置的情况下附接到第一半导体本体（1）。

3. 发明授权

US09029878B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08 , H01L25/075 , H01L33/22 , H01L33/50 , H01L33/58 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译：一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

4. 发明申请

US20130043496A1 LIGHTING DEVICE 有权
标题翻译：照明设备
公开(公告)号：US20130043496A1
公开(公告)日：2013-02-21
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译：一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

5. 发明申请

US20120299049A1 Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip 审中-公开
标题翻译：光电半导体芯片及其适用于接触光电子半导体芯片的接触结构的方法
公开(公告)号：US20120299049A1
公开(公告)日：2012-11-29
申请号：US13497733
申请日：2010-09-10
申请人： Patrick Rode , Lutz Höppel , Norwin von Malm , Matthias Sabathil , Jürgen Moosburger
发明人： Patrick Rode , Lutz Höppel , Norwin von Malm , Matthias Sabathil , Jürgen Moosburger
IPC分类号： H01L33/48 , H01R43/16
CPC分类号： H01L27/153 , G01R31/318516 , H01H85/0417 , H01H85/32 , H01L23/5256 , H01L25/0753 , H01L27/156 , H01L33/62 , H01L51/50 , H01L2224/73265 , H01L2924/00 , H01L2924/0002 , H02H3/046 , H03K17/74 , H03K19/17728 , H05B33/083 , H05B33/0893 , Y10T29/49204
摘要： An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected.
摘要翻译：光电子半导体芯片具有带有第一端子和第二端子的第一半导体功能区域。接触结构与光电子半导体芯片电接触。接触结构电连接到第一半导体功能区。接触结构具有可断开的导体结构。如果导体结构不断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流通路。如果导体结构断开，则该路径中断。或者，如果导体结构断开，则通过第一半导体功能区域的第一端子和第二端子建立工作电流路径。如果导体结构未断开，则导体结构将第一端子连接到第二端子并使第一半导体功能区域短路。

6. 发明授权

US08450751B2 Optoelectronic semiconductor body and method for producing the same 有权
标题翻译：光电半导体体及其制造方法
公开(公告)号：US08450751B2
公开(公告)日：2013-05-28
申请号：US12596170
申请日：2008-04-24
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.
摘要翻译：光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。半导体本体被设置用于从前侧发射电磁辐射。第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。此外，规定了这种光电子半导体体的制造方法。

7. 发明申请

US20120032306A1 Method for Patterning a Semiconductor Surface, and Semiconductor Chip 审中-公开
标题翻译：半导体表面图案化方法和半导体芯片
公开(公告)号：US20120032306A1
公开(公告)日：2012-02-09
申请号：US13148631
申请日：2010-01-22
申请人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
发明人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
IPC分类号： H01L29/12 , H01L21/312
CPC分类号： H01L33/22 , H01L33/0062
摘要： A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer.
摘要翻译：规定了图案化半导体表面的方法。光致抗蚀剂被施加到第二半导体晶片的外部区域。通过将第一晶片的图案化表面压印到光致抗蚀剂中，使光刻胶远离第二半导体晶片的表面被图案化。将图案化方法应用于光致抗蚀剂的表面，其中施加在光致抗蚀剂上的结构至少在第二半导体晶片的外部区域被转移。

8. 发明申请

US20110049555A1 Optoelectronic Semiconductor Chip and Method for Producing Same 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US20110049555A1
公开(公告)日：2011-03-03
申请号：US12921379
申请日：2009-03-13
申请人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
发明人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
IPC分类号： H01L33/58 , H01L31/00
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
摘要翻译：光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。第一导电类型的层与半导体层序列的正面相邻。半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。

9. 发明申请

US20100230698A1 Optoelectronic Semiconductor Body 有权
标题翻译：光电半导体
公开(公告)号：US20100230698A1
公开(公告)日：2010-09-16
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/12 , H01L33/30
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译：光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

10. 发明授权

US08928052B2 Optoelectronic semiconductor chip and method for producing same 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US08928052B2
公开(公告)日：2015-01-06
申请号：US12921379
申请日：2009-03-13
申请人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
发明人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
IPC分类号： H01L31/062 , H01L31/113 , H01L33/38 , H01L33/40 , H01L33/46 , H01L33/62
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
摘要翻译：光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。第一导电类型的层与半导体层序列的正面相邻。半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。

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