会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Method for producing an optoelectronic semiconductor component
    • 光电半导体元件的制造方法
    • US08569079B2
    • 2013-10-29
    • US13322662
    • 2010-05-03
    • Elmar BaurAlexander HeindlBernd BohmPatrick RodeHeribert Zull
    • Elmar BaurAlexander HeindlBernd BohmPatrick RodeHeribert Zull
    • H01L21/00
    • H01L33/22B82Y10/00B82Y40/00G03F7/0002H01L33/005H01L33/20
    • A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.
    • 一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片,其中所述图案化表面至少在具有第一和第二高度的高度的位置形成,其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中,将光致抗蚀剂的表面图案化为远离第二晶片,其中,将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面,其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。