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1. 发明授权

US06300203B1 Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors 有权
标题翻译：电介质前体材料的电沉积用于嵌入栅极MOS晶体管
公开(公告)号：US06300203B1
公开(公告)日：2001-10-09
申请号：US09679872
申请日：2000-10-05
申请人： Matthew S. Buynoski , Paul R. Besser , Qi Xang , Paul L. King , Eric N. Paton
发明人： Matthew S. Buynoski , Paul R. Besser , Qi Xang , Paul L. King , Eric N. Paton
IPC分类号： H01L21336
CPC分类号： H01L21/28194 , H01L21/31683 , H01L29/517 , H01L29/66583
摘要： High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolytically plating a metal or metal-based dielectric precursor layer comprising at least one refractory or lanthanum series transition metal, on a semiconductor substrate, typically a silicon-based substrate, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one refractory or lanthanum series transition metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.
摘要翻译：通过电解电镀形成高质量的电介质层，例如由至少一种难熔或镧系列过渡金属氧化物或硅酸盐构成的高k电介质层，用作在叠层金属栅极MOS晶体管和CMOS器件中作为栅极绝缘体层在半导体衬底（通常为硅基衬底）上包含至少一种难熔或镧系过渡金属的金属或金属基电介质前体层，然后使前体层与氧或氧和半导体衬底反应，形成至少一种耐火材料或镧系列过渡金属氧化物或硅酸盐。本发明的方法在至少形成栅极绝缘体层的初始阶段期间防止或至少基本上减少氧接触到衬底表面，从而最小化半导体衬底/栅极处的氧诱导表面状态的有害形成绝缘子接口。

2. 发明授权

US06559051B1 Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors 有权
标题翻译：用于嵌入栅极MOS晶体管的介电材料前体材料的无电沉积
公开(公告)号：US06559051B1
公开(公告)日：2003-05-06
申请号：US09679881
申请日：2000-10-05
申请人： Matthew S. Buynoski , Paul R. Besser , Paul L. King , Eric N. Paton , Qi Xang
发明人： Matthew S. Buynoski , Paul R. Besser , Paul L. King , Eric N. Paton , Qi Xang
IPC分类号： H01L2144
CPC分类号： H01L21/28194 , H01L21/28114 , H01L29/42376 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/517 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66583
摘要： High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolessly plating a metal or metal-based dielectric precursor layer comprising at least one refractory or lanthanum series transition metal, such as of Zr and/or Hf, on a silicon-based semiconductor substrate and then reacting the precursor layer with oxygen or with oxygen and the Si-based semiconductor substrate to form the at least one metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.
摘要翻译：通过无电镀法形成高质量电介质层，例如由至少一种耐火材料或镧系列过渡金属氧化物或硅酸盐构成的高k电介质层，用作叠层金属栅极MOS晶体管和CMOS器件中的栅极绝缘体层金属或金属基电介质前体层，其在硅基半导体衬底上包含至少一种难熔或镧系过渡金属，例如Zr和/或Hf，然后使前体层与氧或氧与Si反应的半导体衬底以形成至少一种金属氧化物或硅酸盐。本发明的方法在至少形成栅极绝缘体层的初始阶段期间防止或至少基本上减少氧接触到衬底表面，从而最小化半导体衬底/栅极处的氧诱导表面状态的有害形成绝缘子接口。

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