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    • 1. 发明授权
    • Spin-tunnel magneto-resistance type magnetic sensor
    • 旋转磁阻型磁传感器
    • US06504690B2
    • 2003-01-07
    • US09767847
    • 2001-01-24
    • Matahiro KomuroYoshiaki Kawato
    • Matahiro KomuroYoshiaki Kawato
    • G11B539
    • B82Y25/00B82Y10/00G01R33/093G01R33/098G11B5/00G11B5/3903G11B5/3909G11B5/3967Y10T29/49044
    • A magnetic sensor utilizing a spin tunnel magneto-resistance effect (TMR), comprising a tunnel insulating film, a first magnetic layer formed on one of the planes of the tunnel insulating film, a second magnetic layer formed on the other plane of the tunnel insulating film, a third magnetic layer containing an anti-ferromagnetic substance for fixing magnetization of the second magnetic layer, a second insulating film formed on at least one of the first and third magnetic layers and having an opening in a predetermined region, a first electrode electrically connected to one of the first and third magnetic layers only in the opening of the second insulating film, and a second electrode for causing a current to flow between the first electrode and itself through at least the first and second magnetic layers and the first insulating layer.
    • 一种利用自旋隧道磁阻效应(TMR)的磁传感器,包括隧道绝缘膜,形成在隧道绝缘膜的一个平面上的第一磁性层,形成在隧道绝缘层的另一平面上的第二磁性层 膜,含有用于固定第二磁性层的磁化的反铁磁性物质的第三磁性层,形成在第一和第三磁性层中的至少一个上并且在预定区域中具有开口的第二绝缘膜,第一电极电 连接到仅在第二绝缘膜的开口中的第一和第三磁性层中的一个上,以及第二电极,用于使电流至少通过第一和第二磁性层和第一绝缘层在第一电极和自身之间流动 。
    • 3. 发明授权
    • Spin tunnel magneto-resistance effect type magnetic sensor and production method thereof
    • 旋转隧道磁阻效应型磁传感器及其制造方法
    • US06327107B1
    • 2001-12-04
    • US09302228
    • 1999-04-29
    • Matahiro KomuroYoshiaki Kawato
    • Matahiro KomuroYoshiaki Kawato
    • G11B502
    • B82Y25/00B82Y10/00G01R33/093G01R33/098G11B5/00G11B5/3903G11B5/3909G11B5/3967Y10T29/49044
    • A magnetic sensor utilizing a spin tunnel magneto-resistance effect (TMR), comprising a tunnel insulating film, a first magnetic layer formed on one of the planes of the tunnel insulating film, a second magnetic layer formed on the other plane of the tunnel insulating film, a third magnetic layer containing an anti-ferromagnetic substance for fixing magnetization of the second magnetic layer, a second insulating film formed on at least one of the first and third magnetic layers and having an opening in a predetermined region, a first electrode electrically connected to one of the first and third magnetic layers only in the opening of the second insulating film, and a second electrode for causing a current to flow between the first electrode and itself through at least the first and second magnetic layers and the first insulating layer.
    • 一种利用自旋隧道磁阻效应(TMR)的磁传感器,包括隧道绝缘膜,形成在隧道绝缘膜的一个平面上的第一磁性层,形成在隧道绝缘层的另一平面上的第二磁性层 膜,含有用于固定第二磁性层的磁化的反铁磁性物质的第三磁性层,形成在第一和第三磁性层中的至少一个上并且在预定区域中具有开口的第二绝缘膜,第一电极电 连接到仅在第二绝缘膜的开口中的第一和第三磁性层中的一个上,以及第二电极,用于使电流至少通过第一和第二磁性层和第一绝缘层在第一电极和自身之间流动 。
    • 7. 发明授权
    • Magnetic head
    • 磁头
    • US07426091B2
    • 2008-09-16
    • US11393684
    • 2006-03-31
    • Yasuyuki OkadaHiroyuki HoshiyaYoshiaki Kawato
    • Yasuyuki OkadaHiroyuki HoshiyaYoshiaki Kawato
    • G11B5/147
    • G11B5/1278
    • The disclosed invention provides a magnetic head of high stability in which “erase after write” is prevented. Here is provided a magnetic head comprising a thin-film magnetic head for perpendicular magnetic recording, the thin-film magnetic head including a main pole with its tip facing a magnetic recording medium and coils for exciting the main pole, wherein the tip of or at least a part of the main pole consists of a soft magnetic multilayer containing laminations, each of which comprises a first ferromagnetic film, a second ferromagnetic film, and an antiparallel coupling layer formed between the first ferromagnetic film and the second ferromagnetic film, wherein the antiparallel coupling layer causes antiferromagnetic interlayer coupling of the first ferromagnetic film and the second ferromagnetic film.
    • 所公开的发明提供了一种高稳定性的磁头,其中防止“写入后擦除”。 这里提供了一种磁头,其包括用于垂直磁记录的薄膜磁头,该薄膜磁头包括一个主极,其顶端面向磁记录介质和用于激励主极的线圈,其中尖端或 主极的至少一部分由包含叠层的软磁性多层组成,每层包含第一铁磁膜,第二铁磁膜和形成在第一铁磁膜和第二铁磁膜之间的反并联耦合层,其中反平行 耦合层引起第一铁磁膜和第二铁磁膜的反铁磁层间耦合。
    • 8. 发明申请
    • MAGNETIC HEAD AND MAGNETIC DISK SYSTEM HAVING THE SAME
    • 具有相同的磁头和磁盘系统
    • US20080212239A1
    • 2008-09-04
    • US12014128
    • 2008-01-15
    • Yoshiaki KawatoChiseki HaginoyaKaori Suzuki
    • Yoshiaki KawatoChiseki HaginoyaKaori Suzuki
    • G11B5/33
    • G11B5/315G11B5/11G11B5/1278G11B5/3116G11B5/313G11B5/3912G11B5/3967
    • A read sensor is disposed near a main pole, thereby reducing the distance between the read sensor and a write sensor. In this case, however, a magnetic field generated from the main pole affects magnetization of a free layer and a pinned layer of a magnetoresistive film, thereby causing the magnetizing directions to rotate, a magnetic barrier to be generated, and the read property to be degraded. According to the present invention, a main pole and a yoke configure a magnetic circuit together with a sub-pole and a soft magnetic under layer of the magnetic disk and an exciting coil magnetizes the magnetic circuit, thereby a recording magnetic field is applied to a recording layer to record information bits on the layer. And in order to sharpen the magnetic field distribution generated by the main pole, a trailing shield made of a ferromagnetic material is disposed at the trailing side of the main pole adjacently. And a read sensor (magnetoresistive element) for reading bit information is provided between the trailing shield and the main pole.
    • 读取传感器设置在主极附近,从而减小读取传感器和写入传感器之间的距离。 然而,在这种情况下,从主极产生的磁场影响自由层和磁阻膜的固定层的磁化,从而使磁化方向旋转,产生磁阻,读取性能为 退化 根据本发明,主极和磁轭与磁盘的子极和软磁层一起构成磁路,励磁线圈对磁路进行磁化,由此将记录磁场施加到 记录层在层上记录信息位。 为了锐化由主极产生的磁场分布,由铁磁材料制成的后挡板相邻地设置在主极的后侧。 并且在后屏蔽和主极之间提供用于读取位信息的读取传感器(磁阻元件)。