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1. 发明授权

US06177635B1 Wiring substrate and manufacturing method thereof 有权
标题翻译：接线基板及其制造方法
公开(公告)号：US06177635B1
公开(公告)日：2001-01-23
申请号：US09461276
申请日：1999-12-14
申请人： Masuo Sugiura , Hiroshi Watanabe , Mitsuji Kubota
发明人： Masuo Sugiura , Hiroshi Watanabe , Mitsuji Kubota
IPC分类号： H01B1700
CPC分类号： H01B7/40 , B60R16/0215 , H01B7/009 , H01B7/08 , H05K1/144
摘要： A coating insulator layer has plural rows of through holes disposed longitudinally in the coating insulator layer. A plurality of conductors are disposed in parallel with one another longitudinally in the coating insulator layer. Each conductor does not interfere with the through holes. Plural rows of locking projections are longitudinally formed on a face of the coating insulator layer. The locking projection has a construction to engage with the through hole. Thus, when a couple of the wiring substrates are layered, some of the locking projections formed on one of the wiring substrates are aligned to be engaged with some relative through holes of the other wiring substrate, allowing a sure lamination of the wiring substrates. The locking projections are disposed in regular intervals and the through holes are spaced in the same regular intervals. Another wiring substrate is enough flexible to be arranged along a structural wall for wiring. The wiring substrate has a stiffener means disposed in the insulator layer. The stiffener means is positioned not to interfere with the conductors and provides enough stiffness to keep the wiring substrate in a desired shape. The stiffener means has a larger strength than the insulator layer in bending strength and the stiffener means is disposed parallel with the longitudinal direction of the conductors. The wiring substrate has a plurality of through holes which each can be engageable with a locking projection provided on the structural wall.
摘要翻译：涂层绝缘体层具有在涂层绝缘体层中纵向设置的多排通孔。多个导体在涂层绝缘体层中纵向彼此平行地设置。每个导体不会干扰通孔。在涂层绝缘体层的表面上纵向形成多排锁定突起。锁定突起具有与通孔接合的结构。因此，当一对布线基板被层叠时，形成在一个布线基板上的一些锁定突起被对准以与另一布线基板的一些相对通孔接合，从而允许布线基板的可靠层叠。锁定突起以规则的间隔设置，并且通孔以相同的规则间隔隔开。另一布线基板足够灵活地沿着用于布线的结构壁布置。布线基板具有设置在绝缘体层中的加强装置。加强件装置被定位成不干扰导体并且提供足够的刚度以将布线基板保持在期望的形状。加强件在弯曲强度方面具有比绝缘体层更大的强度，并且加强件装置与导体的纵向方向平行设置。布线基板具有多个通孔，每个通孔可与设置在结构壁上的锁定突起接合。

2. 发明授权

US11354476B2 Simulation method of an electron device 有权
公开(公告)号：US11354476B2
公开(公告)日：2022-06-07
申请号：US16682187
申请日：2019-11-13
申请人： Hiroshi Watanabe
发明人： Nobuyuki Sano , Hiroshi Watanabe , Chih-Wei Yao
IPC分类号： G06F17/10 , G06F30/367 , G06F111/08
摘要： There is a significant precaution when performing random dopant fluctuation by using the drift-diffusion model that is the basis of the conventional device simulation. Because the continuation by a long wavelength approximation was done to derive said drift-diffusion model. That is how to recover the location dependence of discrete impurity ions in the long wavelength approximation. For example, in the case that there is an impurity ion near to the interface to an insulating film, the charge density of an impurity ion, which was made continuous in the conventional method, is unable to catch the charge density change due to polarization at the interface. Because this polarization is dependent of the location of a discrete impurity ion near to the interface.
A method for simply implementing the effect of polarization to the device simulation is provided by appending an image charge inside the insulating film to linearize the charge of discrete impurity ion which locates near to the interface to satisfy the consistency to the drift-diffusion model while keeping the location dependency of the discrete ion.

3. 发明授权

US10785022B2 Network without abuse of a private key 有权
公开(公告)号：US10785022B2
公开(公告)日：2020-09-22
申请号：US15700280
申请日：2017-09-11
申请人： Hiroshi Watanabe
发明人： Hiroshi Watanabe , Te-Chang Tseng , Yukihiro Nagai , Riichiro Shirota
IPC分类号： H04L9/08 , G06Q20/38 , G06F7/58 , H04L9/32 , G06Q20/36 , G06F21/60 , G06F21/73 , G06F21/44
摘要： A network includes a logical network and a physical network. The logical network includes a plurality of logical nodes. Each logical node is connected to a respective identification core. Each identification core includes at least one semiconductor chip having a physical randomness. Each semiconductor chip generates one of a plurality of pairs of private keys and public keys based on the physical randomness thereof according to an input received by the one of the at least one semiconductor chip under a public key cryptography. One of the public keys is regarded as a logical address of one of the logical nodes, which is connected to one of the identification cores. The physical network includes a plurality of physical nodes. Each identification core is one of components in each physical node. The logical network is uniquely linked to the physical network by the pairs of private keys and public keys.

4. 发明授权

US10693636B2 Authenticated network 有权
公开(公告)号：US10693636B2
公开(公告)日：2020-06-23
申请号：US15871178
申请日：2018-01-15
申请人： Guigen Xia , Hiroshi Watanabe
发明人： Hiroshi Watanabe , Atsuhiro Kinoshita
IPC分类号： H04L9/08 , H04L29/08 , H04L9/32 , G06F21/60 , G06F21/73 , H04L29/06
摘要： An authenticated network having a plurality of nodes is disclosed. Each node includes a transaction unit and an identification core. The identification core includes a key generator. The key generators of the identification cores generate a plurality of unique pairs of secret and public keys. The public key serves as a logical address of the transaction unit. Another authenticated network having a plurality of nodes is also disclosed, in which the identification core further includes a private key. The key generators of the identification cores generate a plurality of public keys from the private keys of the identification cores. Each public key serves as a logical address of the transaction unit of a corresponding node. One of the public keys and one of the private keys form a unique pair. Thus, the transaction unit manages the information communication among the plurality of nodes. The identification core manages an authentication of the nodes.

5. 发明授权

US10226959B2 Substrate processing apparatus 有权
公开(公告)号：US10226959B2
公开(公告)日：2019-03-12
申请号：US13811877
申请日：2011-07-21
申请人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
发明人： Hiromi Kiyose , Satoru Hiraki , Hiroshi Watanabe
IPC分类号： B44C1/22 , H01L21/67 , H01L21/311
摘要： A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

6. 发明申请

US20170221581A1 Semiconductor Apparatus and Identification Method of a Semiconductor Chip 审中-公开
公开(公告)号：US20170221581A1
公开(公告)日：2017-08-03
申请号：US15416160
申请日：2017-01-26
申请人： Hiroshi Watanabe
发明人： Yukihiro Nagai , Hiroshi Watanabe , Riichiro Shirota
IPC分类号： G11C29/34 , G11C29/02 , G11C29/00 , G06F21/57 , G11C29/18
摘要： A semiconductor apparatus including a semiconductor chip is disclosed. The semiconductor chip includes a modular region and a test circuit. The modular region includes a plurality of modular areas each including a memory cell array with redundant bit lines and a peripheral memory area storing at least redundant addresses. The test circuit retrieves the redundant addresses intrinsic to the semiconductor chip. The distribution of the redundant addresses are randomly formed related to a part or a whole of the modular area of the modular region. The test circuit outputs a random number generated from physical properties intrinsic to the semiconductor chip according to a specification code received from a physical-chip-identification measuring device.

7. 发明授权

US09506854B2 Method and device for measuring scattering-absorption body 有权
标题翻译：测量散射吸收体的方法和装置
公开(公告)号：US09506854B2
公开(公告)日：2016-11-29
申请号：US13695362
申请日：2011-03-29
申请人： Etsuko Yamaki , Yutaka Yamashita , Motoki Oda , Hiroaki Suzuki , Toshihiko Suzuki , Hiroshi Watanabe , Shunsaku Koga
发明人： Etsuko Yamaki , Yutaka Yamashita , Motoki Oda , Hiroaki Suzuki , Toshihiko Suzuki , Hiroshi Watanabe , Shunsaku Koga
IPC分类号： G01N21/17 , G01N21/49 , A61B5/1455 , G01N21/359 , A61B5/145
CPC分类号： G01N21/17 , A61B5/14546 , A61B5/1455 , A61B2562/0242 , G01N21/359 , G01N21/49
摘要： Light irradiates one light incident position on the surface of a scattering-absorption body. The light that propagates through the interior of the scattering-absorption body is detected at one light detecting position on the surface of the scattering-absorption body. On the basis of a light detection signal, a temporal profile of the light intensity of the detected light is acquired, and on the basis of the temporal profile, an mean optical path length of the light in the interior of the scattering-absorption body and information relating to the amount of substance to be measured in a region to be measured are calculated. The information relating to the amount of substance to be measured is corrected on the basis of the mean optical path length, such that the longer the mean optical path length, the greater the amount of substance to be measured is.
摘要翻译：光照射散射吸收体表面上的一个光入射位置。在散射吸收体的表面的一个光检测位置处检测通过散射吸收体的内部传播的光。基于光检测信号，获取检测光的光强度的时间分布，并且基于时间分布，散射吸收体内部的光的平均光路长度和计算与要测量的区域中的待测物质量有关的信息。基于平均光程长度校正与被测量物质量有关的信息，使得平均光程长度越长，待测物质量越多。

8. 发明授权

US09470169B2 Control device for internal combustion engine 有权
标题翻译：内燃机控制装置
公开(公告)号：US09470169B2
公开(公告)日：2016-10-18
申请号：US13979217
申请日：2011-01-20
申请人： Hiroshi Watanabe , Yasumichi Inoue
发明人： Hiroshi Watanabe , Yasumichi Inoue
IPC分类号： F02D41/30 , F02D41/12 , F02D41/04 , F02D41/10
CPC分类号： F02D41/30 , F02D41/047 , F02D41/107 , F02D41/12 , F02D41/123 , F02D41/126 , F02D41/307 , F02D41/3094
摘要： An object of the present invention is to enhance precision of air-fuel ratio control after return from fuel cut in a control device for an internal combustion engine that has a plurality of fuel injection modes, and performs calculation of a fuel injection amount by a method corresponding to an injection mode in use. For this object, the control device for an internal combustion engine the present invention provides normally determines the injection mode in response to an operation state, but designates a specific injection mode with a higher priority than the injection mode determined in response to the operation state at a time of return from fuel cut. For a predetermined time period after the return from fuel cut, the control device prohibits the injection mode from being changed in response to the operation state, and keeps fuel injection according to the designated specific injection mode.
摘要翻译：本发明的目的是在具有多个燃料喷射模式的内燃机的控制装置中从燃料切断返回后提高空燃比控制的精度，并且通过方法进行燃料喷射量的计算对应于使用中的喷射模式。为此目的，本发明提供的内燃机控制装置通常响应于操作状态而确定喷射模式，而是指定具有比响应于操作状态所确定的喷射模式更高优先级的特定喷射模式从燃料切断返回的时间。在从燃料切断返回后的预定时间段内，控制装置禁止喷射模式响应于操作状态而改变，并且根据指定的特定喷射模式保持喷射燃料。

9. 发明授权

US09059193B2 Epitaxial wafer and semiconductor element 有权
标题翻译：外延晶片和半导体元件
公开(公告)号：US09059193B2
公开(公告)日：2015-06-16
申请号：US13514201
申请日：2010-12-27
申请人： Kenichi Ohtsuka , Kenichi Kuroda , Hiroshi Watanabe , Naoki Yutani , Hiroaki Sumitani
发明人： Kenichi Ohtsuka , Kenichi Kuroda , Hiroshi Watanabe , Naoki Yutani , Hiroaki Sumitani
IPC分类号： H01L29/15 , H01L29/66 , C30B23/02 , C30B25/02 , C30B29/36 , H01L21/02 , H01L29/10 , H01L29/16 , H01L29/872 , H01L21/04 , H01L29/78
CPC分类号： H01L29/66068 , C30B23/02 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02496 , H01L21/02529 , H01L21/02576 , H01L21/0495 , H01L29/107 , H01L29/1095 , H01L29/1608 , H01L29/7802 , H01L29/7827 , H01L29/872
摘要： A silicon carbide semiconductor element, including: i) an n-type silicon carbide substrate doped with a dopant, such as nitrogen, at a concentration C, wherein the substrate has a lattice constant that decreases with doping; ii) an n-type silicon carbide epitaxially-grown layer doped with the dopant, but at a smaller concentration than the substrate; and iii) an n-type buffer layer doped with the dopant, and arranged between the substrate and the epitaxially-grown layer, wherein the buffer layer has a multilayer structure in which two or more layers having the same thickness are laminated, and is configured such that, based on a number of layers (N) in the multilayer structure, a doping concentration of a K-th layer from a silicon carbide epitaxially-grown layer side is C·K/(N+1).
摘要翻译：一种碳化硅半导体元件，包括：i）以浓度C掺杂有诸如氮的掺杂剂的n型碳化硅衬底，其中所述衬底具有随着掺杂而降低的晶格常数; ii）掺杂有掺杂剂但以比衬底更小的浓度的n型碳化硅外延生长层; 并且iii）掺杂有掺杂剂的n型缓冲层，并且布置在所述衬底和所述外延生长层之间，其中所述缓冲层具有其中层叠具有相同厚度的两层或更多层的多层结构，并且被配置使得基于多层结构中的多个层（N），来自碳化硅外延生长层的第K层的掺杂浓度为C·K /（N + 1）。

10. 发明授权

US08797895B2 Radio relay station, radio relay method, radio communication system, location management device, radio terminal, and radio communication method 有权
标题翻译：无线中继站，无线中继方式，无线通信系统，位置管理装置，无线终端，无线通信方式
公开(公告)号：US08797895B2
公开(公告)日：2014-08-05
申请号：US13061117
申请日：2009-08-26
申请人： Takashi Baba , Nobuo Kuchiki , Akira Ishida , Hiroshi Watanabe , Eiji Nakayama
发明人： Takashi Baba , Nobuo Kuchiki , Akira Ishida , Hiroshi Watanabe , Eiji Nakayama
IPC分类号： H04L12/26 , H04W40/16
CPC分类号： H04W40/16 , H04B7/15542 , H04W72/0446 , H04W84/047
摘要： Provided is a radio relay station which relays data transmitted and received by a radio base station a radio terminal in a radio communication system which employs the TDD scheme. The radio relay station receives data from the radio base station during a downlink subframe period and transmits data to the radio base station during an uplink subframe period. The radio relay station sets a remote side transmission period for transmitting data to the radio terminal in the uplink subframe period and sets a remote side reception period for receiving data from the radio terminal in the downlink subframe period.
摘要翻译：提供一种无线电中继站，其在由无线电基站在无线电终端中发送和接收数据的无线电中继站中采用TDD方案。无线电中继站在下行链路子帧周期期间从无线电基站接收数据，并且在上行链路子帧周期期间向无线电基站发送数据。无线中继站在上行链路子帧周期中设置用于向无线终端发送数据的远程侧发送期间，在下行子帧期间设定用于从无线终端接收数据的远程侧接收期间。

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