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1. 发明授权

US06488407B1 Radiation temperature measuring method and radiation temperature measuring system 失效
标题翻译：辐射温度测量方法和辐射温度测量系统
公开(公告)号：US06488407B1
公开(公告)日：2002-12-03
申请号：US09527243
申请日：2000-03-17
申请人： Masayuki Kitamura , Eisuke Morisaki , Nobuaki Takahashi , Takashi Shigeoka
发明人： Masayuki Kitamura , Eisuke Morisaki , Nobuaki Takahashi , Takashi Shigeoka
IPC分类号： G01J500
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0818 , G01J5/0887 , G01J5/0896 , G01J2005/0051 , G01J2005/0077
摘要： The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector 1 of a radius R disposed opposite to the wafer (W), and a probe (2) disposed in a through hole formed in the reflector (1). The probe (2) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector (1). An error in measured radiation intensity of radiation falling the probe (2) due to light that enters a space between the wafer (W) and the reflector (1) and a space between the reflector (1) and the probe (2) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.
摘要翻译：本发明旨在通过基于由多次反射光模拟的虚拟黑体的想法，通过辐射温度计测量半导体晶片的温度来提高温度测量的精度。系统包括晶片（W），与晶片（W）相对设置的半径为R的圆形反射器1和设置在形成于反射器（1）中的通孔中的探针（2）。探针（2）是通孔。通过通孔的辐射的辐射强度由设置在反射器（1）的后表面后面的CCD照相机提供的图像数据确定。由于进入晶片（W）和反射器（1）之间的空间的光以及反射器（1）和探针（2）之间的空间以及光线（2）引起的探测器（2）的测量辐射强度的误差校正相同空间的泄漏，计算晶片的发射率（W），并确定晶片（W）的温度。

2. 发明授权

US06467952B2 Virtual blackbody radiation system and radiation temperature measuring system 失效
标题翻译：虚拟黑体辐射系统和辐射温度测量系统
公开(公告)号：US06467952B2
公开(公告)日：2002-10-22
申请号：US09527239
申请日：2000-03-16
申请人： Eisuke Morisaki , Masayuki Kitamura , Nobuaki Takahashi , Takashi Shigeoka
发明人： Eisuke Morisaki , Masayuki Kitamura , Nobuaki Takahashi , Takashi Shigeoka
IPC分类号： G01K1500
CPC分类号： G01J5/522
摘要： A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation. Thus, the virtual blackbody radiation system (10) is able to obtain light of a desired intensity without changing the driving current for driving a light source; consequently, the life time of the light source can be extended and the stability of radiation can be improved.
摘要翻译：虚拟黑体辐射系统（10）包括包括由固定电流驱动的LED的发光单元（1），包括蓝宝石棒的光接收单元（2）和包括透镜（31）的光学单元（3），32），用于会聚由所述发光单元发射的光。包括在光学单元（3）中的圆柱形构件（41）可以通过包括在聚焦调节单元（4）中的伺服电动机（42）沿光轴移动，用于位置调节。可以通过相对于光接收单元（2）沿着光轴移动设置在圆柱形构件（41）中的透镜（32）来调节相对于光接收单元（2）的会聚光的聚焦。光接收单元（2）上的会聚光的强度可以被调整到预定黑体辐射的强度。因此，虚拟黑体辐射系统（10）能够在不改变用于驱动光源的驱动电流的情况下获得所需强度的光; 因此，可以延长光源的寿命并且可以提高辐射的稳定性。

3. 发明授权

US06473993B1 Thermal treatment method and apparatus 失效
标题翻译：热处理方法及装置
公开(公告)号：US06473993B1
公开(公告)日：2002-11-05
申请号：US09537768
申请日：2000-03-30
申请人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
发明人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
IPC分类号： F26B304
CPC分类号： H01L21/67109
摘要： A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.
摘要翻译：将半导体晶片安装在设置在处理室中的基座上，将晶片在约1000℃的温度下加热退火，并且从与晶片相对设置的气体供给装置供给气体。当提高晶片的温度和/或当降低晶片的温度时，将表面内温度差限制在较小的值以抑制滑移的发生。气体供给装置分别对应于晶片的中心部分和周边部分，以将不同流量的气体分别供应到中心部分和周边部分。当提高晶片的温度时，例如以比晶片的温度更高（低于）的温度的气体以比将气体供应到周边部分的流量更大（下）到中部。当降低晶片的温度时，例如以比晶片的温度更高（更低）的温度的气体以比供应气体的周边部分低的（高）的单位面积的流量被供给到中部。

4. 发明授权

US06630991B2 Thermal processing apparatus 失效
公开(公告)号：US06630991B2
公开(公告)日：2003-10-07
申请号：US09838566
申请日：2001-04-20
申请人： Masayuki Kitamura , Eisuke Morisaki , Yun Mo
发明人： Masayuki Kitamura , Eisuke Morisaki , Yun Mo
IPC分类号： G01J548
CPC分类号： H01L21/67248 , G01J5/0003
摘要： A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.

5. 发明授权

US08487449B2 Carbon nanotube interconnection and manufacturing method thereof 有权
标题翻译：碳纳米管互连及其制造方法
公开(公告)号：US08487449B2
公开(公告)日：2013-07-16
申请号：US13215463
申请日：2011-08-23
申请人： Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Masayuki Kitamura , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naohsi Sakuma
发明人： Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Masayuki Kitamura , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naohsi Sakuma
IPC分类号： H01L29/70 , H01L21/4763
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y40/00 , H01L21/76831 , H01L21/76844 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76865 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2221/1089 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.
摘要翻译：根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。绝缘膜形成在第一导电层上并包括孔。在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。在孔中的侧表面上的催化剂底层上形成催化剂失活膜。在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

6. 发明申请

US20130075912A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130075912A1
公开(公告)日：2013-03-28
申请号：US13424791
申请日：2012-03-20
申请人： Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
发明人： Satoshi Wakatsuki , Ichiro Mizushima , Atsuko Sakata , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/20
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/14 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
摘要翻译：根据一个实施例，一种制造半导体器件的方法包括：在半导体衬底上形成氧化硅膜; 在氧化硅膜中形成通孔; 在通孔内形成接触层; 在所述接触层上形成硅层; 以及通过使含钨气体与硅层反应形成嵌入通孔中的钨膜。

7. 发明申请

US20120228614A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120228614A1
公开(公告)日：2012-09-13
申请号：US13413854
申请日：2012-03-07
申请人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
发明人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02645 , H01L21/28556 , H01L21/32051 , H01L21/76846 , H01L21/76877 , H01L23/53276 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要翻译：根据一个实施例，公开了一种半导体器件。该器件包括半导体衬底和半导体衬底上方的互连。互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。助催化剂层包括与催化剂层接触的部分。该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

8. 发明申请

US20070054064A1 Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head 审中-公开
标题翻译：微波等离子体处理方法，微波等离子体处理装置及其等离子体头
公开(公告)号：US20070054064A1
公开(公告)日：2007-03-08
申请号：US10566241
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/306 , H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要翻译：微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时物体相对于线性等离子体保持在水平位置。等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

9. 发明授权

US06435869B2 Quartz window having reinforcing ribs 有权
标题翻译：石英窗具有加强筋
公开(公告)号：US06435869B2
公开(公告)日：2002-08-20
申请号：US09839157
申请日：2001-04-23
申请人： Masayuki Kitamura
发明人： Masayuki Kitamura
IPC分类号： F27D500
CPC分类号： H01L21/67115 , C23C16/481 , C23C16/488
摘要： A quartz window can withstand a pressure difference between an atmospheric pressure and a negative pressure environment created in a thermal processing apparatus that applies a thermal process to a target object under the negative pressure environment. The quartz window is adapted to be positioned between a radiation heat source and an object to be subjected to a heat treatment in the process chamber. The quartz window has a plate made of quartz and a plurality of ribs formed on the plate so as to reinforce the plate.
摘要翻译：石英窗可承受在负压环境下对目标物体施加热处理的热处理装置中产生的大气压和负压环境之间的压力差。石英窗口适于位于辐射热源和待处理室内进行热处理的物体之间。石英窗具有由石英制成的板和形成在板上的多个肋，以便加强板。

10. 发明授权

US5539844A Ball bearing cages and ball bearings 失效
标题翻译：球轴承保持架和球轴承
公开(公告)号：US5539844A
公开(公告)日：1996-07-23
申请号：US389994
申请日：1995-02-17
申请人： Hajime Tazumi , Masayuki Kitamura , Hiroshi Ueno , Tsuyoshi Okumura , Shigetaka Ashida
发明人： Hajime Tazumi , Masayuki Kitamura , Hiroshi Ueno , Tsuyoshi Okumura , Shigetaka Ashida
IPC分类号： F16C19/06 , F16C33/38 , F16C33/41 , F16C33/42
CPC分类号： F16C33/418 , F16C33/416 , F16C33/427 , F16C19/06
摘要： A ball bearing cage is formed with pockets each having an inwardly curved spherical pocket face similar to a ball in shape. At least one of the pockets has a protrusion projecting inwardly thereof from one of inner and outer circumferential edge portions of the pocket face. A ball bearing comprises balls retained between inner and outer bearing rings and equispaced circumferentially thereof by a cage. The cage is formed with pockets each having an inwardly curved spherical pocket face similar to the ball in shape, at least one of the pockets having a protrusion projecting inwardly thereof from an edge portion of the face close to the fixed one of the rings.
摘要翻译：球轴承保持架形成有各自具有类似于球形的向内弯曲的球形口袋面的凹穴。至少一个凹穴具有从口袋面的内圆周边缘部分和外圆周边缘部分之一向内突出的突起。滚珠轴承包括保持在内轴承环和外轴承环之间并且通过保持架在其周向等间隔的球的滚珠。保持架形成有各自具有类似于球形的向内弯曲的球形凹穴面的凹穴，至少一个凹穴具有从靠近固定环之一的面的边缘部向内突出的突起。

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