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1. 发明授权

US06307146B1 Amorphous silicon solar cell 失效
标题翻译：非晶硅太阳能电池
公开(公告)号：US06307146B1
公开(公告)日：2001-10-23
申请号：US09404409
申请日：1999-09-23
申请人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
发明人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
IPC分类号： H01L310376
CPC分类号： H01L31/028 , H01L31/03762 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.
摘要翻译：非晶硅太阳能电池包括基板，形成在该基板上的透明电极，形成在该透明电极上的发电膜和形成在该发光膜上的背面电极。发电膜通过依次层叠p型/ i型/ n型氢化非晶硅层而形成。 i型氢化非晶硅层的缺陷密度小于1015缺陷/ cc。

2. 发明授权

US5405447A Plasma CVD apparatus 失效
标题翻译：等离子体CVD装置
公开(公告)号：US5405447A
公开(公告)日：1995-04-11
申请号：US74738
申请日：1993-06-10
申请人： Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama , Satoshi Uchida , Kazutoshi Hamamoto
发明人： Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama , Satoshi Uchida , Kazutoshi Hamamoto
IPC分类号： C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32541
摘要： A plasma CVD apparatus whose discharge electrode is a single line member bent in a U shape in an alternating manner and in which a substrate to be processed is held substantially in parallel to the discharge electrode. The electric field around the electrode becomes stronger and the intensity distribution of this field becomes even. As a result, a product film formed on the substrate surface has a uniform thickness, and the film can be formed at high speeds.
摘要翻译：一种等离子体CVD装置，其放电电极是以交替的方式弯曲成U形的单线构件，并且其中待处理衬底基本上平行于放电电极保持。电极周围的电场变强，该场的强度分布变得均匀。结果，形成在基板表面上的产品膜具有均匀的厚度，并且可以高速地形成膜。

3. 发明授权

US06363881B2 Plasma chemical vapor deposition apparatus 有权
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US06363881B2
公开(公告)日：2002-04-02
申请号：US09232600
申请日：1999-01-19
申请人： Masayoshi Murata , Yoshiaki Takeuchi , Hiroshi Mashima , Akemi Takano , Hirohisa Yoshida
发明人： Masayoshi Murata , Yoshiaki Takeuchi , Hiroshi Mashima , Akemi Takano , Hirohisa Yoshida
IPC分类号： C23C16509
CPC分类号： H01J37/32082 , H01J37/32541
摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.
摘要翻译：公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极，用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。

4. 发明授权

US06456010B2 Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus 有权
标题翻译：放电等离子体产生方法，放电等离子体产生装置，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US06456010B2
公开(公告)日：2002-09-24
申请号：US09756651
申请日：2001-01-10
申请人： Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
发明人： Hideo Yamakoshi , Koji Satake , Yoshiaki Takeuchi , Hiroshi Mashima , Tatsufumi Aoi , Masayoshi Murata
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.
摘要翻译：放电等离子体产生方法包括：（a）将具有基本上平面的放电部分的放电电极与真空反应容器中的待处理基板相对，使得放电电极和基板彼此基本平行;（b）将将真空反应容器供给到放电电极和基板之间的空间，并且（c）向放电电极施加HF功率，使得表示在分离的放电电极上的HF电压phi的空间分布的外壳根据包括时间的功能作为参数进行第二变化，从而在放电电极和基板之间产生处理气体的放电等离子体，基本上不会在放电电极上产生HF电压phi的驻波。

5. 发明授权

US5423915A Plasma CVD apparatus including rotating magnetic field generation means 失效
标题翻译：等离子CVD装置，包括旋转磁场产生装置
公开(公告)号：US5423915A
公开(公告)日：1995-06-13
申请号：US127377
申请日：1993-09-28
申请人： Masayoshi Murata , Yoshiaki Takeuchi
发明人： Masayoshi Murata , Yoshiaki Takeuchi
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , C23C16/50
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/5096 , H01J37/32623 , H01J37/3266 , H01J2237/3325 , H01J2237/3326
摘要： This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.
摘要翻译：本发明提供了一种旨在高速地在大面积基板上形成非晶硅薄膜的等离子体CVD方法及其装置。该方法和装置的特征在于反应容器，用于将反应气体送入反应容器并将其排出的装置，将容纳在反应容器中的电极放电，向放电电极供给辉光放电的电源，电磁线圈布置在所述反应容器的相对侧上并且被布置成使得其轴线垂直地彼此垂直地相交，并且垂直地形成在放电电极之间的电场;以及AC电源，用于向所述螺线管线圈供电用于产生磁场，由此在保持垂直于放电电极之间的电场的基板上形成非晶硅薄膜。

6. 发明授权

US06353201B1 Discharge electrode, RF plasma generation apparatus using the same, and power supply method 有权
标题翻译：放电电极，使用其的RF等离子体发生装置以及供电方法
公开(公告)号：US06353201B1
公开(公告)日：2002-03-05
申请号：US09614134
申请日：2000-07-11
申请人： Hideo Yamakoshi , Kengou Yamaguchi , Masayoshi Murata , Yoshiaki Takeuchi , Yoshikazu Nawata , Koji Satake , Satoshi Kokaji , Shoji Morita , Masatoshi Hisatome , Tatsuji Horioka , Hiroshi Mashima
发明人： Hideo Yamakoshi , Kengou Yamaguchi , Masayoshi Murata , Yoshiaki Takeuchi , Yoshikazu Nawata , Koji Satake , Satoshi Kokaji , Shoji Morita , Masatoshi Hisatome , Tatsuji Horioka , Hiroshi Mashima
IPC分类号： B23K1000
CPC分类号： H01J37/32082 , H01J37/32532 , H05H1/46
摘要： A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.
摘要翻译：多个电极棒彼此平行地布置，并且侧电极棒连接到电极棒的相应的相对端，从而形成梯状RF放电电极。电源点相对于参考线轴对称地布置，该参考线是将RF放电电极的一侧平分的等分线，同时与基准线隔开预定距离，由此抑制梯形电极上的电压分布，其具有对均匀性的影响，达到足够低的不均匀度。因此，可以获得膜沉积速率的均匀分布，从而即使在大面积应用中也能均匀沉积。

7. 发明授权

US5261962A Plasma-chemical vapor-phase epitaxy system comprising a planar antenna 失效
标题翻译：等离子体化学气相外延系统，包括平面天线
公开(公告)号：US5261962A
公开(公告)日：1993-11-16
申请号：US893010
申请日：1992-06-03
申请人： Kazutoshi Hamamoto , Satoshi Uchida , Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama
发明人： Kazutoshi Hamamoto , Satoshi Uchida , Masayoshi Murata , Yoshiaki Takeuchi , Masaru Kodama
IPC分类号： C30B25/02 , C23C16/507 , C30B25/10 , H01J37/32 , H01L21/205 , C23C16/50
CPC分类号： H01J37/3222 , C23C16/507 , C30B25/105 , H01J37/32082 , H01J37/32165 , H01J37/32229
摘要： A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.

8. 发明授权

US06344701B1 Pulse generator for treating exhaust gas 失效
标题翻译：用于处理废气的脉冲发生器
公开(公告)号：US06344701B1
公开(公告)日：2002-02-05
申请号：US09369842
申请日：1999-08-09
申请人： Keisuke Kawamura , Tetsuro Shigemizu , Hirohisa Yoshida , Masayoshi Murata
发明人： Keisuke Kawamura , Tetsuro Shigemizu , Hirohisa Yoshida , Masayoshi Murata
IPC分类号： H03K302
CPC分类号： F01N3/0892 , B01D53/32 , B01D2259/818 , B01J19/088 , B01J2219/0807 , B01J2219/0875 , B01J2219/0894
摘要： An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R1, R2, . . . Rn) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V1, V2, . . . and Vn) are connected to the reactor chambers (R1, R2, . . . and Rn), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1−1, 1−2, 2−1, 2−2, . . . , N−1 and N−2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S1).
摘要翻译：一种处理废气的设备和方法。在这种装置中，多个反应室（R1，R2，...，Rn）在废气流的方向上串联连接。此外，高压电源（V1，V2，...和Vn）分别连接到电抗器室（R1，R2，...和Rn）。此外，在这些反应器室的每一个中，产生流光放电器等离子体。此外，放置阶段的反应室的下游越下游，要投入反应器室的较低能量变为。在气体分解单元中产生的电子的密度在排气流的上游侧的部分高，并且其下游侧的部分的电子密度低。另外，本发明还提供一种脉冲发生器，其中作为直流充电器（V0）的输出电压的高电压同时施加到多个分布常数线路（或传输线路）（1-1,1） -2,2-1,2-2，...，N-1和N-2），它们通过信号短路开关（S1）彼此并联连接。

9. 发明授权

US06207686B1 Endothelin antagonists 失效
标题翻译：内皮素拮抗剂
公开(公告)号：US06207686B1
公开(公告)日：2001-03-27
申请号：US08836198
申请日：1997-06-20
申请人： Masahiro Neya , Tatsuya Zenkoh , Hitoshi Sawada , Chiyoshi Kasahara , Masayoshi Murata , Keiji Hemmi
发明人： Masahiro Neya , Tatsuya Zenkoh , Hitoshi Sawada , Chiyoshi Kasahara , Masayoshi Murata , Keiji Hemmi
IPC分类号： A61K3138
CPC分类号： C07D405/12 , C07D209/20 , C07D317/60 , C07D409/12
摘要： A compound of formula (I), in which: R1 is lower alkyl, cyclo(lower)alkyl, optionally substituted aryl, optionally substituted heterocyclic group, cyclo(lower)alkyl(lower)alkyl, or ar(lower)alkyl; R2 is hydrogen, hydroxy or protected hydroxy; R3 is lower alkyl, aryl, ar(lower)alkyl or optionally substituted heterocyclic(lower)alkyl; R4 is carboxy, protected carboxy or lower alkylsufonylcarbamoyl; R5 is hydrogen or lower alkyl; R6 is hydrogen or heterocyclic group; A is a single bond or lower alkylene, and Ar is optionally substituted aryl, or pharmaceutically acceptable salts thereof, having endothelin antagonistic activity.
摘要翻译：式（I）化合物，其中：R 1为低级烷基，环（低级）烷基，任选取代的芳基，任选取代的杂环基，环（低级）烷基（低级）烷基或芳（低级）烷基; R2是氢，羟基或被保护的羟基; R3是低级烷基，芳基，芳（低级）烷基或任选取代的杂环（低级）烷基; R4是羧基，被保护的羧基或低级烷基磺酰基氨基甲酰基; R5是氢或低级烷基; R6是氢或杂环基; A是单键或低级亚烷基，Ar是具有内皮素拮抗活性的任选取代的芳基或其药学上可接受的盐。

10. 发明授权

US5261013A Photoelectric converter and image reading apparatus mounting the same 失效
标题翻译：安装光电转换器和图像读取装置
公开(公告)号：US5261013A
公开(公告)日：1993-11-09
申请号：US845052
申请日：1992-03-03
申请人： Masayoshi Murata , Katsumi Komiyama , Tatsundo Kawai , Makoto Ogura , Hiroo Ichihashi , Osamu Hamamoto
发明人： Masayoshi Murata , Katsumi Komiyama , Tatsundo Kawai , Makoto Ogura , Hiroo Ichihashi , Osamu Hamamoto
IPC分类号： H01L31/0216 , H04N1/028 , H04N1/031 , G06K9/00 , H01L31/02 , H04N1/024
CPC分类号： H04N1/02845 , H01L31/02164 , H04N1/02815 , H04N1/031
摘要： A photoelectric converter includes a transparent substrate having a photoelectric converting element provided on a surface opposing a document relating to reading of image information, a transparent support for supporting the substrate, and a light source provided on a surface of the support opposite to a supporting surface for the substrate. Light emitted from the light source is radiated on a document through the support and the substrate, and reflected light is received by the photoelectric converting element.
摘要翻译：光电转换器包括：透明基板，具有设置在与图像信息的读取有关的文件的表面上的光电转换元件，用于支撑基板的透明支撑体，以及设置在支撑体的与支撑面相对的表面上的光源用于基材。从光源发出的光通过支撑体和基板照射在文件上，反射光被光电转换元件接收。

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