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1. 发明授权

US4410558A Continuous amorphous solar cell production system 失效
公开(公告)号：US4410558A
公开(公告)日：1983-10-18
申请号：US240493
申请日：1981-03-16
申请人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
发明人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/20
CPC分类号： H01L31/206 , C23C16/517 , C23C16/54 , H01L31/046 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.

2. 发明授权

US4677738A Method of making a photovoltaic panel 失效
标题翻译：制造光伏面板的方法
公开(公告)号：US4677738A
公开(公告)日：1987-07-07
申请号：US835590
申请日：1986-03-03
申请人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
发明人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
IPC分类号： C23C16/517 , C23C16/54 , H01L27/142 , H01L31/18
CPC分类号： C23C16/54 , C23C16/517 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： A method of making a photovoltaic panel which includes the continuous deposition of silicon films onto a continuously moving substrate web.
摘要翻译：一种制造光伏面板的方法，其包括将硅膜连续沉积到连续移动的衬底腹板上。

3. 发明授权

US4519339A Continuous amorphous solar cell production system 失效
标题翻译：连续非晶太阳能电池生产系统
公开(公告)号：US4519339A
公开(公告)日：1985-05-28
申请号：US340630
申请日：1982-01-19
申请人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
发明人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
IPC分类号： C23C16/517 , C23C16/54 , H01L27/142 , H01L31/18 , C23C17/00
CPC分类号： H01L31/046 , C23C16/517 , C23C16/54 , H01L31/03921 , H01L31/062 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.
摘要翻译：通过辉光放电（等离子体）沉积具有不同电特性的层来连续生产太阳能电池是通过使一个衬底通过一系列沉积室进行的。每个室都专用于特定的材料型沉积。这些室是相互隔离的，以避免其间的不希望的反应气体的混合。每个等离子体沉积在其辉光放电区域，室或室中进行，并且在专用于不同材料类型的等离子体区域之间进行隔离。掩模，机械或光刻，可以相对于基底使用以使沉积成所需的构型。在半导体沉积完成之后，沉积顶部接触和抗反射层，然后进行保护层压。

4. 发明授权

US4400409A Method of making p-doped silicon films 失效
标题翻译：制造p掺杂硅膜的方法
公开(公告)号：US4400409A
公开(公告)日：1983-08-23
申请号：US151301
申请日：1980-05-19
申请人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
发明人： Masatsugu Izu , Vincent D. Cannella , Stanford R. Ovshinsky
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/046 , H01L31/16 , H01L31/18
CPC分类号： C23C16/54 , C23C16/517 , H01L31/046 , H01L31/18 , Y02E10/50
摘要： The production of improved photovoltaic solar cells and the like comprising both p and n type deposited silicon film regions is made possible by a process which provides more efficient p-doped silicon films with higher acceptor concentrations. The process utilizes previously known p-dopant metal or boron gaseous materials in unique forms and conditions in a glow discharge silicon preferably hydrogen and fluorine compensated deposition process. Thus, p-dopant metals like aluminum may be used in an elemental evaporated form, rather than in a gaseous compound form heretofore ineffectively used and deposited with the glow discharge deposited silicon on substrates kept at lower temperatures where fluorine and hydrogen compensation is most effective. Preferably boron in a gaseous compound form like diborane and other p-dopant metals in a gaseous form are used uniquely during the glow discharge deposition of silicon by heating the substrate to heretofore believed undesirably higher temperatures, like at least about 450.degree. C. to 800.degree. C. where at least fluorine compensation, if desired, is still effective. The improved devices, such as solar cells, can be manufactured in a continuous process on a web type substrate moved through a plurality of film deposition chambers. Each of the chambers is dedicated to depositing a particular type of film layer (p, i or n) and is isolated from the other chambers.
摘要翻译：通过提供更高效的具有较高受主浓度的p掺杂硅膜的方法，可以实现包括p型和n型沉积硅膜区域的改进的光伏太阳能电池等的生产。该方法利用先前已知的p-掺杂剂金属或硼气体材料在辉光放电硅中的独特形式和条件，优选氢和氟补偿沉积工艺。因此，诸如铝的p-掺杂剂金属可以以元素蒸发形式使用，而不是迄今为止无效使用的气体化合物形式，并且将辉光放电沉积的硅沉积在保持在氟和氢补偿最有效的较低温度的基板上。优选地，在气态化合物中形成的乙硼烷和其它p-掺杂剂金属的硼在硅的辉光放电沉积期间被独特地用于通过加热基底到目前为止认为不期望的较高温度，如至少约450℃至800℃ 如果需要，至少氟补偿仍然有效。诸如太阳能电池的改进的装置可以在通过多个成膜室移动的网状基板上的连续工艺中制造。每个室专用于沉积特定类型的膜层（p，i或n）并与其它室隔离。

5. 发明授权

US4646266A Programmable semiconductor structures and methods for using the same 失效
标题翻译：可编程半导体结构及其使用方法
公开(公告)号：US4646266A
公开(公告)日：1987-02-24
申请号：US655961
申请日：1984-09-28
申请人： Stanford R. Ovshinsky , Robert R. Johnson , Vincent D. Cannella , Zvi Yaniv
发明人： Stanford R. Ovshinsky , Robert R. Johnson , Vincent D. Cannella , Zvi Yaniv
IPC分类号： H01L21/82 , H01L21/8229 , H01L27/06 , H01L27/10 , H01L27/102 , H01L27/118 , H01L29/861 , G11C17/00
CPC分类号： H01L29/8615 , H01L27/0688 , H01L27/1021 , H01L27/118 , Y10S257/926
摘要： A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four conditions: a first in which the electrical impedance is relatively high in both directions; a second in which the impedance is relatively high in one direction and relatively low in the opposite direction; a third in which the impedance is relatively high in the opposite direction and relatively low in the first direction; and a fourth in which the impedance is relatively low in both directions. Such a programmable device can be made with semiconductor layers which form two series coupled back-to-back diodes, each of which can be selectively programmed to lose its rectifying feature. Structures are disclosed which include a plurality of such programmable devices in one or more separately programmable planes, each with its own addressing means. Programmable logic arrays can be formed out of such multilayered cell structures, including programmable logic arrays, in which the AND and OR planes are vertically disposed one on top of the other.
摘要翻译：公开了一种可编程的固态半导体器件，以便改变其两个端子之间的阻抗。在许多实施例中，该装置可编程为具有以下四个条件中的任何一个：第一，其中电阻抗在两个方向上相对较高; 阻抗在一个方向上相对较高并且在相反方向上相对较低的第二个; 其中阻抗在相反方向上相对较高并且在第一方向上相对较低的第三，阻抗在两个方向上相对较低的第四个。这种可编程器件可以由形成两个串联耦合的背对背二极管的半导体层制成，每个二极管可被选择性地编程以失去其整流特征。公开了在一个或多个单独可编程平面中包括多个这样的可编程设备的结构，每个具有其自己的寻址装置。可编程逻辑阵列可以由这样的多层单元结构形成，包括可编程逻辑阵列，其中AND和OR平面垂直地布置在另一个之上。

6. 发明授权

US4492810A Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices 失效
标题翻译：优化掺杂和带隙调节的光响应非晶合金和器件
公开(公告)号：US4492810A
公开(公告)日：1985-01-08
申请号：US442895
申请日：1982-11-19
申请人： Stanford R. Ovshinsky , Masatsugu Izu
发明人： Stanford R. Ovshinsky , Masatsugu Izu
IPC分类号： H01L21/205 , H01L31/20 , H01L31/06
CPC分类号： H01L21/0242 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/20 , H01L31/202 , Y02E10/50
摘要： The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.The addition of the adjusting element(s) to the alloy in layers or clusters adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsiveness without deleteriously adding states in the gap which decrease the efficiency of the devices. The dopants also are added in thin enough layers or clusters between undoped layers or portions so that the optical and electronic properties of the resulting alloys are not degraded. The dopants and adjusting element(s) can be added in varying amounts, in discrete layers and/or clusters or in substantially constant amounts in the alloys and devices.
摘要翻译：改进的光响应非晶合金和器件的生产，例如光伏，感光器件等。合金和器件具有通过将一个或多个带隙调节元件和掺杂剂引入层和/或簇中的合金和器件而具有改进的波长阈值特性。将掺杂剂和调节元素添加到含有硅和至少一种还原元素如氢的非晶体器件中。一个调节元件是锗，其带隙与材料的带隙相比较窄，而调节元件并入其中。可以使用其它调节元件，例如锡或氮以及常规掺杂剂。硅和调节元件通过气相沉积，溅射或辉光放电分解同时组合并沉积为非晶态合金。将调整元件添加到层或簇中的合金上将特定装置的带隙调整到所选择的最佳波长阈值，以增加光吸收效率以增强器件的光响应性，而不会在间隙中有害地添加状态，从而减少设备的效率。掺杂剂也被加入到不掺杂的层或部分之间的足够薄的层或簇中，使得所得合金的光学和电子性质不劣化。掺杂剂和调节元件可以以不同的量，以离散的层和/或簇或在合金和器件中以基本恒定的量加入。

7. 发明授权

US5411591A Apparatus for the simultaneous microwave deposition of thin films in multiple discrete zones 失效
标题翻译：用于在多个离散区域中同时微波沉积薄膜的装置
公开(公告)号：US5411591A
公开(公告)日：1995-05-02
申请号：US278734
申请日：1994-07-22
申请人： Masatsugu Izu , Buddie R. Dotter, II , Stanford R. Ovshinsky , Wataru Hasegawa
发明人： Masatsugu Izu , Buddie R. Dotter, II , Stanford R. Ovshinsky , Wataru Hasegawa
IPC分类号： C23C16/42 , B65D65/42 , C23C16/02 , C23C16/40 , C23C16/50 , C23C16/511 , C23C16/54 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32211 , B65D65/42 , C23C16/0209 , C23C16/0245 , C23C16/401 , C23C16/402 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3277
摘要： Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.
摘要翻译：用于在多个离散的空间分离的沉积区域上将薄膜材料同时等离子体辅助化学气相沉积到衬底材料的细长网上的装置。为了实现所述同时沉积，衬底材料的幅面可操作地定位成呈现行进通过减压外壳的蛇形路径。通过使用细长的线性施加器作为微波能量源，可以同时实现所述薄膜材料在基底材料的幅材的多个大区域上的均匀沉积的高速率，而不会在所述纤维网的熔点之上加热。在优选实施例中，基材材料由低温微波透射的合成塑料树脂形成，并且沉积在其上的薄膜材料形成用于防止氧扩散的阻隔涂层。

8. 发明授权

US4689645A Current control device 失效
标题翻译：电流控制装置
公开(公告)号：US4689645A
公开(公告)日：1987-08-25
申请号：US853269
申请日：1986-04-17
申请人： Stanford R. Ovshinsky , Masatsugu Izu
发明人： Stanford R. Ovshinsky , Masatsugu Izu
IPC分类号： H01L21/205 , H01L31/20 , H01L45/00
CPC分类号： H01L21/02381 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/20 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.
摘要翻译：提供非晶半导体本体，优选含硅气相沉积膜，其至少含有氟作为补偿或改变，还包含合金化剂，最优选至少一种互补补偿或改性剂，其减少局部缺陷状态无定形半导体材料的能隙达到单独无法实现的程度。结果，在需要的情况下，非晶半导体体提供更高的光电导性，更宽的耗尽宽度，更有效的电荷载体收集，更长的载流子寿命和更低的暗本征电导率，并且可以更容易地修改以使费米能级转移以提供非常有效的n型外部电导率等比现有的非晶半导体本体。

9. 发明授权

US4342044A Method for optimizing photoresponsive amorphous alloys and devices 失效
标题翻译：优化光响应非晶合金和器件的方法
公开(公告)号：US4342044A
公开(公告)日：1982-07-27
申请号：US185520
申请日：1980-09-09
申请人： Stanford R. Ovshinsky , Masatsugu Izu
发明人： Stanford R. Ovshinsky , Masatsugu Izu
IPC分类号： H01L31/04 , C23C14/00 , C23C14/06 , C23C14/32 , C23C16/22 , C23C16/44 , G03G5/08 , H01L21/20 , H01L29/16 , H01L31/0376 , H01L31/076 , H01L31/18 , H01L31/20 , H01L45/00
CPC分类号： H01L31/076 , C23C14/0026 , C23C14/06 , C23C14/32 , C23C16/22 , H01L29/1604 , H01L31/03762 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy to adjust the band gap without reducing the electronic qualities of the alloy. Hydrogen also acts as a compensating or altering element to compliment fluorine when utilized therewith. The compensating or altering element(s) can be added during deposition of the alloy or following deposition. The addition of the adjusting element(s) to the alloys adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsive without adding states in the gap which decrease the efficiency of the devices. The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the alloys and devices.
摘要翻译：改进的光响应非晶合金和器件的生产，例如光伏，感光器件等; 通过将一个或多个带隙调节元件添加到合金和器件，可以实现改进的波长阈值特性。至少将调节元件添加到含硅和氟，优选氢的非晶体器件的活性光响应区域中。一个调节元件是锗，其带隙与材料的带隙相比较窄，而调节元件并入其中。可以使用其它调节元件，例如锡。硅和调节元件通过气相沉积，溅射或辉光放电分解同时组合并沉积为非晶态合金。向合金添加氟键和电负性作为补偿或改变元素，以减少其能隙中的状态密度。氟键强度允许调节元件添加到合金中以调节带隙，而不降低合金的电子质量。当与其一起使用时，氢也充当补偿或改变元素以补充氟。补偿或更换元件可以在合金沉积期间或沉积后加入。将调整元件添加到合金中将特定器件的带隙调整到选定的最佳波长阈值，以提高光吸收效率，以增强器件的光响应，而不会增加间隙中的状态，从而降低器件的效率。调节元件可以以不同的量以不同的层或在合金和器件中以基本上恒定的量加入。

10. 发明授权

US4522663A Method for optimizing photoresponsive amorphous alloys and devices 失效
标题翻译：优化光响应非晶合金和器件的方法
公开(公告)号：US4522663A
公开(公告)日：1985-06-11
申请号：US368221
申请日：1982-04-14
申请人： Stanford R. Ovshinsky , Masatsugu Izu
发明人： Stanford R. Ovshinsky , Masatsugu Izu
IPC分类号： C23C14/00 , C23C14/06 , C23C14/32 , C23C16/22 , C23C16/44 , H01L29/16 , H01L31/076 , H01L31/18 , C22C28/00
CPC分类号： H01L31/076 , C23C14/0026 , C23C14/06 , C23C14/32 , C23C16/22 , H01L29/1604 , H01L31/18 , Y02E10/548 , Y10S420/903
摘要： The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicone and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy to adjust the band gap without reducing the electronic qualities of the alloy. Hydrogen also acts as a compensating or altering element to compliment fluorine when utilized therewith. The compensating or altering element(s) can be added during deposition of the alloy or following deposition. The addition of the adjusting element(s) to the alloys adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsive without adding states in the gap which decrease the efficiency of the devices. The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the alloys and devices.
摘要翻译：改进的光响应非晶合金和器件的生产，例如光伏，感光器件等; 通过将一个或多个带隙调节元件添加到合金和器件，可以实现改进的波长阈值特性。至少将调节元素添加到含有硅氧烷和氟，优选氢的非晶体器件的活性光响应区域中。一个调节元件是锗，其带隙与材料的带隙相比较窄，而调节元件并入其中。可以使用其它调节元件，例如锡。硅和调节元件通过气相沉积，溅射或辉光放电分解同时组合并沉积为非晶态合金。向合金添加氟键和电负性作为补偿或改变元素，以减少其能隙中的状态密度。氟键强度允许调节元件添加到合金中以调节带隙，而不降低合金的电子质量。当与其一起使用时，氢也充当补偿或改变元素以补充氟。补偿或更换元件可以在合金沉积期间或沉积后加入。将调整元件添加到合金中将特定器件的带隙调整到选定的最佳波长阈值，以提高光吸收效率，以增强器件的光响应，而不会增加间隙中的状态，从而降低器件的效率。调节元件可以以不同的量以不同的层或在合金和器件中以基本上恒定的量加入。

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