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1. 发明授权

US4532372A Barrier layer for photovoltaic devices 失效
标题翻译：光伏器件阻挡层
公开(公告)号：US4532372A
公开(公告)日：1985-07-30
申请号：US564862
申请日：1983-12-23
申请人： Prem Nath , Masatsugu Izu
发明人： Prem Nath , Masatsugu Izu
IPC分类号： H01L31/0224 , H01L31/076 , H01L31/20 , H01L31/04
CPC分类号： H01L31/076 , H01L31/022425 , H01L31/208 , Y02E10/548 , Y02P70/521
摘要： An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a magnesium fluoride based material. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.
摘要翻译：一种改进的半导体器件，适于响应入射到其上的光能提供电流，包括第一电极，位于第一电极顶部的有源半导体本体，半导体本体顶部的第二电极，以及能够提供用于装置电极之间的电流流动的低电阻分流路径。该改进包括可操作地设置在半导体主体和该器件的一个电极之间的连续透明阻挡层（1），和（2）适于减小通过半导体器件的至少一个缺陷区域的电流的流动。阻挡层由氟化镁基材料形成。还公开了（1）制造改进的半导体器件的方法和（2）防止由于潜在棘爪引起的操作模式故障的方法。

2. 发明授权

US4485264A Isolation layer for photovoltaic device and method of producing same 失效
标题翻译：光伏器件隔离层及其制造方法
公开(公告)号：US4485264A
公开(公告)日：1984-11-27
申请号：US440386
申请日：1982-11-09
申请人： Masatsugu Izu , Prem Nath
发明人： Masatsugu Izu , Prem Nath
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0216 , H01L31/042 , H01L31/20 , H01L31/18
CPC分类号： H01L31/206 , H01L31/02167 , H01L31/046 , Y02E10/50 , Y02P70/521
摘要： Large area photovoltaic devices are defined by applying a pattern of electrically-insulating material directly atop the exposed surface of the semiconductor material. Methods of producing these photovoltaic devices in a continuous or batch process are also disclosed herein. Each large area device may include a matrix of electrically-isolated segments, each segment including a common substrate, a semiconductor body atop the substrate, and a transparent, electrically-conductive coating atop the semiconductor layer. Each large area photovoltaic device may include additionally or independently thereof, an electrically-inactive region also defined by the insulating material. The instant method of producing the photovoltaic devices eliminates the scribing steps required by prior art processes, while the product includes a boundary which separates the adjacent, electrically-isolated segments.
摘要翻译：通过在半导体材料的暴露表面上直接施加电绝缘材料的图案来限定大面积光伏器件。本文还公开了以连续或间歇方法生产这些光伏器件的方法。每个大面积器件可以包括电隔离段的矩阵，每个段包括公共衬底，在衬底顶部的半导体本体，以及位于半导体层顶部的透明导电涂层。每个大面积光伏器件可以额外地或独立地包括也由绝缘材料限定的电非活性区域。制造光伏器件的即时方法消除了现有技术方法所需的划线步骤，而产品包括分隔相邻的电隔离段的边界。

3. 发明授权

US4530739A Method of fabricating an electroplated substrate 失效
公开(公告)号：US4530739A
公开(公告)日：1985-07-23
申请号：US588013
申请日：1984-03-09
申请人： Joseph J. Hanak , Prem Nath , Masatsugu Izu , James Young
发明人： Joseph J. Hanak , Prem Nath , Masatsugu Izu , James Young
IPC分类号： H01L31/042 , C25D1/04 , H01L21/288 , H01L27/142 , H01L31/0392 , H01L31/04 , H01L31/052 , C25D1/20 , C25D5/48
CPC分类号： C25D1/04 , H01L21/2885 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0547 , Y02E10/52
摘要： An electroplated substrate, characterized by a substantially reduced number of surface defects, for the fabrication of thin film electronic devices. The substrate is prepared in an electroforming process by electroplating onto and removing a metallic layer from the surface of a specifically prepared, substantially defect-free mandril. The substrate may be provided with a preselected surface finish by either (1) texturing the mandril or (2) controlling the parameters of the electroplating process to control the morphology of the deposit. The substrate is especially adapted for the fabrication of thin film photoresponsive devices which incorporate specular or diffuse back reflectors, since the texture may be controlled to provide for the appropriate type of reflectivity. Large area, thin film semiconductor devices incorporating the electroplated substrate are readily scribed to form electrically isolated small area segments for the fabrication of modules, arrays and the like.

4. 发明授权

US4513684A Upstream cathode assembly 失效
标题翻译：上游阴极组件
公开(公告)号：US4513684A
公开(公告)日：1985-04-30
申请号：US452224
申请日：1982-12-22
申请人： Prem Nath , Masatsugu Izu
发明人： Prem Nath , Masatsugu Izu
IPC分类号： H01L31/04 , C23C16/509 , H01J37/32 , H01L21/205 , C23C13/10
CPC分类号： H01J37/32018 , C23C16/509
摘要： An upstream cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed on the upstream side of a substrate. As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system, upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate. In this manner, higher order chains of the process gases are subjected to the upstream electromagnetic field and are therefore more easily broken down by the deposition cathode and deposited onto the substrate in desired lower order chains and compositions so as to provide improved electrical properties.
摘要翻译：一种用于辉光放电沉积设备的上游阴极系统，所述设备适用于生产大面积光伏器件。在这种装置中，工艺气体通常从设置在基板的上游侧的气体歧管引入沉积室。当工艺气体被拉过衬底的表面时，它们在由沉积阴极或微波发生器开发的电磁场的影响下被连续地分离和复合。通过在沉积阴极或微波发生器的上游提供预制阴极系统，（1）工艺气体中的杂质，（2）来自沉积室的壁的污染物和（3）最初分离和重组的工艺气体组成可以沉积到并从设置在基板的上游的收集板收集。以这种方式，处理气体的较高级链经受上游电磁场，因此更容易被沉积阴极分解并以期望的低级链和组合物沉积到基底上，从而提供改善的电性能。

5. 发明授权

US4443652A Electrically interconnected large area photovoltaic cells and method of producing said cells 失效
标题翻译：电互连大面积光伏电池及其制造方法
公开(公告)号：US4443652A
公开(公告)日：1984-04-17
申请号：US440385
申请日：1982-11-09
申请人： Masatsugu Izu , Prem Nath , Arthur Holland
发明人： Masatsugu Izu , Prem Nath , Arthur Holland
IPC分类号： H01L31/0224 , H01L31/04 , H01L31/042 , H01L31/076 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , H01L31/0201 , H01L31/0465 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Electrical interconnections for a large area photovoltaic cells, electrical interconnections for adjacent large area photovoltaic cells and the methods of producing those connections are disclosed herein. The cells are, preferably, of the type which include a plurality of electrically isolated, small area segments sharing a common substrate, a semiconductor body atop the substrate and a transparent, conductive coating atop the semiconductor body. The electrical interconnections include: an electrically-conductive strip interconnecting the small area segments of each large area to provide a first electrode of that cell; and access to the substrate from the layered surface of each large area cell to provide the second electrode of that cell. The electrodes may be electrically-interconnected in series or parallel.
摘要翻译：这里公开了用于大面积光伏电池的电互连，用于相邻的大面积光伏电池的电互连以及制造这些连接的方法。电池优选地包括共享公共衬底的多个电隔离的小区域段，衬底顶部的半导体本体和半导体本体顶上的透明导电涂层的类型。电互连包括：导电条，其互连每个大面积的小区域段以提供该电池的第一电极; 并且从每个大面积单元的层叠表面进入基板以提供该单元的第二电极。电极可以串联或并联电互连。

6. 发明授权

US4617421A Photovoltaic cell having increased active area and method for producing same 失效
标题翻译：具有增加的活性面积的光伏电池及其制造方法
公开(公告)号：US4617421A
公开(公告)日：1986-10-14
申请号：US718970
申请日：1985-04-01
申请人： Prem Nath , Masatsugu Izu , Herbert C. Ovshinsky , Avtar Singh
发明人： Prem Nath , Masatsugu Izu , Herbert C. Ovshinsky , Avtar Singh
IPC分类号： H01L31/04 , H01L31/0392 , H01L31/042 , H01L31/076 , H01L25/02 , H01L31/18
CPC分类号： H01L31/076 , H01L31/0201 , H01L31/03921 , H01L31/0445 , H01L31/0504 , Y02E10/548
摘要： An improved large area photovoltaic device includes a plurality of electrically interconnected smaller area cells. The smaller area cells each have a laterally disposed bus bar and are disposed in overlapping relationships so that the bus bar of a given cell is beneath the substrate of the adjacent overlapping cell. In this manner the surface of the resulting large area device available for photovoltaic power generation is maximized. Also disclosed herein are methods for the manufacture of the improved device.
摘要翻译：改进的大面积光伏器件包括多个电互连较小区域单元。较小的区域单元每个都具有横向布置的汇流条并且以重叠关系设置，使得给定单元的母线在相邻重叠单元的基板下方。以这种方式，可以用于光伏发电的所得大面积装置的表面最大化。本文还公开了用于制造改进的装置的方法。

7. 发明授权

US4598306A Barrier layer for photovoltaic devices 失效
标题翻译：光伏器件阻挡层
公开(公告)号：US4598306A
公开(公告)日：1986-07-01
申请号：US518184
申请日：1983-07-28
申请人： Prem Nath , Masatsugu Izu
发明人： Prem Nath , Masatsugu Izu
IPC分类号： H01L31/0224 , H01L31/076 , H01L31/20 , H01L27/14
CPC分类号： H01L31/076 , H01L31/022425 , H01L31/208 , Y02E10/548 , Y02P70/521
摘要： An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.
摘要翻译：一种改进的半导体器件，适于响应入射到其上的光能提供电流，包括第一电极，位于第一电极顶部的有源半导体本体，半导体本体顶部的第二电极，以及能够提供用于装置电极之间的电流流动的低电阻分流路径。该改进包括可操作地设置在半导体主体和该器件的一个电极之间的连续透明阻挡层（1），和（2）适于减小通过半导体器件的至少一个缺陷区域的电流的流动。阻挡层由选自以下的材料形成：基本上由氧化物，氮化物和碳化物组成：铟，锡，镉，锌，锑，硅，铬及其混合物。还公开了（1）制造改进的半导体器件的方法和（2）防止由于潜在棘爪引起的操作模式故障的方法。

8. 发明授权

US4565607A Method of fabricating an electroplated substrate 失效
标题翻译：电镀基板的制造方法
公开(公告)号：US4565607A
公开(公告)日：1986-01-21
申请号：US734712
申请日：1985-05-16
申请人： Joseph J. Hanak , Prem Nath , Masatsugu Izu , James Young
发明人： Joseph J. Hanak , Prem Nath , Masatsugu Izu , James Young
IPC分类号： C25D1/04 , H01L21/288 , C25D5/48
CPC分类号： H01L21/2885 , C25D1/04
摘要： An electroplated substrate, characterized by a substantially reduced number of surface defects, for the fabrication of thin film electronic devices. The substrate is prepared in an electroforming process by electroplating onto and removing a metallic layer from the surface of a specifically prepared, substantially defect-free mandril. The substrate may be provided with a preselected surface finish by either (1) texturing the mandril or (2) controlling the parameters of the electroplating process to control the morphology of the deposit. The substrate is especially adapted for the fabrication of thin film photoresponsive devices which incorporate specular or diffuse back reflectors, since the texture may be controlled to provide for the appropriate type of reflectivity. Large area, thin film semiconductor devices incorporating the electroplated substrate are readily scribed to form electrically isolated small area segments for the fabrication of modules, arrays and the like.
摘要翻译：一种电镀基板，其特征在于用于制造薄膜电子器件的表面缺陷的数量明显减少。通过电镀从特定制备的，基本上无缺陷的曼陀罗的表面上去除金属层并在电铸工艺中制备基底。可以通过（1）将曼尼尔纹理化或（2）控制电镀工艺的参数来控制沉积物的形态，来为衬底提供预选的表面光洁度。该衬底特别适用于制造包含镜面或漫反射反射器的薄膜光响应器件，因为可以控制纹理以提供适当类型的反射率。结合电镀基板的大面积薄膜半导体器件易于划刻以形成用于制造模块，阵列等的电隔离的小区域段。

9. 发明授权

US4483883A Upstream cathode assembly 失效
标题翻译：上游阴极组件
公开(公告)号：US4483883A
公开(公告)日：1984-11-20
申请号：US549054
申请日：1983-11-07
申请人： Prem Nath , Masatsugu Izu
发明人： Prem Nath , Masatsugu Izu
IPC分类号： H01L31/04 , C23C16/509 , H01J37/32 , H01L21/205 , B05D3/06
CPC分类号： H01J37/32018 , C23C16/509
摘要： An upstream or predeposition cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the continuous production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed upstream of a substrate. As the process gases are drawn across the surface of the substrate, they are disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate. In this manner, the process gases subjected to the upstream electromagnetic field are more easily broken down by the deposition cathode and deposited onto the substrate in desired chemical combinations and compositions so as to provide improved electrical, chemical and optical properties. Also disclosed herein is the use of such a precathode assembly to aid in the high speed deposition of homogeneous, amorphous, powder-free semiconductor material of uniform thickness across the entire width of the substrate.
摘要翻译：用于辉光放电沉积设备的上游或预沉积阴极系统，所述设备适于连续生产大面积光伏器件。在这种装置中，工艺气体通常从设置在基板上游的气体歧管引入沉积室。当工艺气体被拉过衬底的表面时，它们在由沉积阴极或微波发生器开发的电磁场的影响下被解离并重组。通过在沉积阴极或微波发生器的上游提供预制阴极系统，（1）处理气体中的杂质，（2）来自沉积室的壁的污染物和（3）最初分离和重组的工艺气体组成可以沉积到从设置在基板上游的收集板收集。以这种方式，受到上游电磁场的处理气体更容易被沉积阴极分解，并以所需的化学组合和组合物沉积到衬底上，以提供改进的电学，化学和光学性质。这里还公开了使用这样的预阴极组件来帮助在衬底的整个宽度上均匀的，无定形的，无粉末的均匀厚度的半导体材料的高速沉积。

10. 发明授权

US5637537A Method of severing a thin film semiconductor device 失效
标题翻译：切断薄膜半导体器件的方法
公开(公告)号：US5637537A
公开(公告)日：1997-06-10
申请号：US881345
申请日：1992-05-11
申请人： Prem Nath , Craig N. Vogeli
发明人： Prem Nath , Craig N. Vogeli
IPC分类号： H01L31/0216 , H01L31/20 , H01L21/302 , H01L21/463
CPC分类号： H01L31/206 , H01L31/02167 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10S148/028
摘要： A method of severing a thin film semiconductor device. The semiconductor device includes a substrate having a first electrode region formed thereon, a semiconductor body formed of layers of thin film semiconductor alloy material disposed upon the base electrode, a transparent, electrically conductive second electrode deposited atop the semiconductor body, and a containment layer of polymeric material associated with the first or second electrode in at least one region to permit subsequent severing of the device into a plurality of devices through said containment layer region.
摘要翻译：一种切断薄膜半导体器件的方法。半导体器件包括其上形成有第一电极区域的基板，由设置在基极上的薄膜半导体合金材料层形成的半导体本体，沉积在半导体本体顶部上的透明导电的第二电极，以及安置层在至少一个区域中与第一或第二电极相关联的聚合材料，以允许随后通过所述容纳层区域将装置切断成多个装置。

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