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    • 5. 发明授权
    • Semiconductor device with delay correction function
    • 具有延迟校正功能的半导体器件
    • US06720811B2
    • 2004-04-13
    • US10193251
    • 2002-07-12
    • Minobu YazawaShinichi NakagawaYasushi Wada
    • Minobu YazawaShinichi NakagawaYasushi Wada
    • H03L700
    • H03K5/135G06F1/10H03K5/133H03K2005/00078
    • A semiconductor device includes a delay amount measuring unit, multiple delay sections and a correction signal generating unit. The delay amount measuring unit for measures an actual delay amount corresponding to a specified delay amount by supplying a clock signal with a known period to multiple 1-ns-delay strings with a preassigned delay amount, and by detecting phase variations of the clock signal by the 1-ns-delay strings. The delay sections includes a delay string capable of freely adjusting a connection number of its delay elements. The correction signal generating unit generates a correction signal for enabling each of the delay sections to correct the connection number of the delay strings such that each delay section has a desired delay amount, in accordance with the actual delay amount corresponding to the specified delay amount and measured by the delay measuring unit.
    • 半导体器件包括延迟量测量单元,多个延迟部分和校正信号生成单元。 延迟量测量单元,用于通过向具有预分配的延迟量的多个1-ns延迟串提供具有已知周期的时钟信号,并且通过检测时钟信号的相位变化来检测相应于指定延迟量的实际延迟量, 1 ns延迟字符串。 延迟部分包括能够自由地调节其延迟元件的连接数量的延迟串。 校正信号生成单元根据与规定的延迟量对应的实际延迟量,生成用于使每个延迟部分能够校正延迟串的连接数,使得每个延迟部分具有期望的延迟量的校正信号,以及 由延迟测量单元测量。
    • 9. 发明授权
    • Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions
    • 具有具有突出的导电侧壁部分的浮动栅极的非易失性半导体存储器件
    • US06172394B2
    • 2001-01-09
    • US09302398
    • 1999-04-30
    • Shinichi Nakagawa
    • Shinichi Nakagawa
    • H01L29788
    • H01L29/66825H01L21/28273H01L29/42324H01L29/7885
    • A non-volatile semiconductor memory device includes memory cells each having a duplicate gate structure in which a floating gate and a control gate are stacked. Each memory cell includes a semiconductor substrate of a first conductivity type; a first gate insulation film formed on the semiconductor substrate; a first conductive film formed on the first gate insulation film and constituting a portion of the floating gate; first and second semiconductor regions of a second conductivity type opposite to the first conductivity type, formed on the semiconductor substrate so as to be self-aligned with side walls of the first conductive film; conductive side-wall portions formed additionally formed on the side walls so as to protrude from a top surface of the first conductive film and to overlap the first and second semiconductor regions, and constituting the remaining portion of the floating gate; a second gate insulation film formed to cover the first conductive film and the conductive side-wall portions; and a second conductive film formed on the second gate insulation film and constituting the control gate. This structure can improve the write efficiency and the erasure efficiency, and reduce the cell area and voltages to be applied to each cell in the write operation and the erasure operation.
    • 非挥发性半导体存储器件包括存储单元,每个存储单元具有重叠的栅极结构,其中堆叠浮置栅极和控制栅极。 每个存储单元包括第一导电类型的半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在第一栅绝缘膜上并构成浮栅的一部分的第一导电膜; 形成在半导体衬底上以与第一导电膜的侧壁自对准的与第一导电类型相反的第二导电类型的第一和第二半导体区域; 导电侧壁部分另外形成在侧壁上以从第一导电膜的顶表面突出并且与第一和第二半导体区域重叠,并且构成浮动栅极的剩余部分; 形成为覆盖所述第一导电膜和所述导电侧壁部的第二栅极绝缘膜; 以及形成在第二栅极绝缘膜上并构成控制栅极的第二导电膜。 该结构可以提高写入效率和擦除效率,并且在写入操作和擦除操作中减小要施加到每个单元的单元面积和电压。
    • 10. 发明授权
    • Process for producing light-absorbing chalcopyrite film
    • 光吸收黄铜矿膜生产工艺
    • US5910336A
    • 1999-06-08
    • US52163
    • 1998-03-31
    • Hiroki IshiharaShinichi NakagawaNorio MochizukiMasaharu Ishida
    • Hiroki IshiharaShinichi NakagawaNorio MochizukiMasaharu Ishida
    • C01B19/04C03C17/22C23C18/12C23C20/06H01L31/032B05D3/12
    • C03C17/22H01L31/0322C03C2217/288C03C2217/289C03C2218/113Y02E10/541Y02P70/521
    • An improved process for producing a light-absorbing chalcopyrite film is disclosed, which comprises the steps of: applying at least one solution containing at least either of (a) an organic compound of a metal in Group 1B of the periodic table and (b) an organic compound of a metal in Group 3B of the periodic table on a substrate at least once to thereby form a thin film containing the organic compound (a) and the organic compound (b); heating the thin film in a reducing or inert gas atmosphere to convert the thin film into a thin metal film comprising the Group 1B metal and the Group 3B metal; and heating the thin metal film in an atmosphere containing either an element in Group 6B of the periodic table or a compound thereof to thereby convert the thin metal film into a thin chalcopyrite film. This process eliminates the problem concerning the control of the composition and thickness of a light-absorbing chalcopyrite film, and is suitable for the mass production of homogeneous large light-absorbing plates for use in solar cells.
    • 公开了一种用于制备光吸收黄铜矿膜的改进方法,其包括以下步骤:施加至少一种至少一种包含(a)元素周期表第1B族中的(a)金属有机化合物和(b) 在基板上的元素周期表3B中的金属的有机化合物至少一次,从而形成含有有机化合物(a)和有机化合物(b)的薄膜; 在还原或惰性气体气氛中加热薄膜以将薄膜转变成包含1B族金属和3B族金属的薄金属膜; 并在含有元素周期表第6B族元素或其化合物的气氛中加热薄金属膜,从而将薄金属膜转变为薄黄铜矿膜。 该方法消除了关于光吸收性黄铜矿膜的组成和厚度的控制的问题,并且适用于批量生产用于太阳能电池的均匀的大型吸光板。