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1. 发明申请

US20080275218A1 LY6H GENE 有权
标题翻译： LY6H基因
公开(公告)号：US20080275218A1
公开(公告)日：2008-11-06
申请号：US12167288
申请日：2008-07-03
申请人： Masato HORIE , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
发明人： Masato HORIE , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
IPC分类号： C07K14/00
CPC分类号： C07K14/705 , A61K38/00 , A61K48/00
摘要： The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.
摘要翻译：本发明提供了可用于治疗阿尔茨海默氏病的脑特异性基因，例如其包含与SEQ ID NO：1所示的氨基酸序列相关的核苷酸序列及其片段; 包含该基因的表达载体; 包含表达载体的宿主细胞; 该基因的表达产物; 针对产品的抗体; 用于神经变性疾病的治疗和预防组合物; 等等。

2. 发明授权

US07432363B2 Ly6H gene 有权
标题翻译： Ly6H基因
公开(公告)号：US07432363B2
公开(公告)日：2008-10-07
申请号：US10743018
申请日：2003-12-23
申请人： Masato Horie , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
发明人： Masato Horie , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
IPC分类号： C07H21/04 , C07H21/02 , C12P21/06 , C12N15/00 , C12N5/00 , C07K1/00
CPC分类号： C07K14/705 , A61K38/00 , A61K48/00
摘要： The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.
摘要翻译：本发明提供了可用于治疗阿尔茨海默病的脑特异性基因，例如，其包含与SEQ ID NO：1所示的氨基酸序列及其片段相关的核苷酸序列; 包含该基因的表达载体; 包含表达载体的宿主细胞; 该基因的表达产物; 针对产品的抗体; 用于神经变性疾病的治疗和预防组合物; 等等。

3. 发明授权

US07582732B2 Ly6h polypeptide 有权
标题翻译： Ly6h多肽
公开(公告)号：US07582732B2
公开(公告)日：2009-09-01
申请号：US12167288
申请日：2008-07-03
申请人： Masato Horie , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
发明人： Masato Horie , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
IPC分类号： C07K14/00 , C12P21/06 , C12N15/00
CPC分类号： C07K14/705 , A61K38/00 , A61K48/00
摘要： The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.
摘要翻译：本发明提供了可用于治疗阿尔茨海默氏病的脑特异性基因，例如其包含与SEQ ID NO：1所示的氨基酸序列相关的核苷酸序列及其片段; 包含该基因的表达载体; 包含表达载体的宿主细胞; 该基因的表达产物; 针对产品的抗体; 用于神经变性疾病的治疗和预防组合物; 等等。

4. 发明申请

US20090017479A1 LY6H GENE 审中-公开
标题翻译： LY6H基因
公开(公告)号：US20090017479A1
公开(公告)日：2009-01-15
申请号：US12032012
申请日：2008-02-15
申请人： Masato HORIE , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
发明人： Masato HORIE , Keiichi Okutomi , Yoshihiro Taniguchi , Mikio Suzuki , Yutaka Ohbuchi
IPC分类号： G01N33/533 , C07K16/18 , G01N33/53
CPC分类号： C07K14/705 , A61K38/00 , A61K48/00
摘要： The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.
摘要翻译：本发明提供了可用于治疗阿尔茨海默氏病的脑特异性基因，例如其包含与SEQ ID NO：1所示的氨基酸序列相关的核苷酸序列及其片段; 包含该基因的表达载体; 包含表达载体的宿主细胞; 该基因的表达产物; 针对产品的抗体; 用于神经变性疾病的治疗和预防组合物; 等等。

5. 发明申请

US20050282364A1 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus 审中-公开
标题翻译：制造半导体薄膜的方法和半导体薄膜制造装置
公开(公告)号：US20050282364A1
公开(公告)日：2005-12-22
申请号：US11155072
申请日：2005-06-16
申请人： Masanori Seki , Tetsuya Inui , Yoshihiro Taniguchi
发明人： Masanori Seki , Tetsuya Inui , Yoshihiro Taniguchi
IPC分类号： B23K26/03 , B23K26/06 , B23K26/42 , C30B11/00 , C30B13/24 , C30B29/06 , H01L21/00 , H01L21/20 , H01L21/36 , H01L21/84 , H01L29/786
CPC分类号： H01L21/02675 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/0604 , B23K26/0608 , B23K26/705 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L29/78672 , Y10T117/10
摘要： A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film substrate with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the radiation timing or power density of the at least two types of laser beams is controlled according to change in reflectance of a site of the precursor semiconductor thin film substrate irradiated with a predetermined reference laser beam.
摘要翻译：一种包括多晶半导体区域的半导体薄膜的制造方法，其通过用至少两种类型的激光束照射前体半导体薄膜基板，并对前体半导体薄膜进行熔融再结晶，其中，所述前体半导体薄膜的辐射正时或功率密度根据照射预定参考激光束的前体半导体薄膜基片的位置的反射率的变化来控制至少两种类型的激光束。

6. 发明授权

US06247495B1 Flow rate detection mechanism with a restriction element for mass flow meters 有权
标题翻译：具有质量流量计限制元件的流量检测机构
公开(公告)号：US06247495B1
公开(公告)日：2001-06-19
申请号：US09452636
申请日：1999-12-01
申请人： Keiichiro Yamamoto , Yoshihiro Taniguchi
发明人： Keiichiro Yamamoto , Yoshihiro Taniguchi
IPC分类号： G01F500
CPC分类号： G01F5/00 , G01F1/684 , Y10T137/7761 , Y10T137/87354 , Y10T137/87539
摘要： A flow proportioning assembly for dividing a portion of a fluid flow such as gas for presentation to a sensor includes a holder member having a central opening and forming an exterior peripheral passageway when inserted within a conduit of a flow meter housing. A resistor member can be adjustably mounted in the central opening downstream of a holder member aperture to encourage a laminar flow pattern and a large entrance port and a large exit port can communicate with a passageway that is operatively connected with a sensor. The exit port is downstream of the resistor member. Flexible fastener members can engage the resistor member and the holder member for ease of mounting. The resistor member can also comprise a helical arrangement of small fluid passageways to encourage laminar flow.
摘要翻译：用于将诸如用于呈现的气体的流体流的一部分分割成传感器的流量比例组合件包括具有中心开口的保持器构件，并且当插入到流量计壳体的管道内时形成外部周边通道。电阻器构件可以可调节地安装在保持器构件孔的下游的中央开口中，以促进层流图案，并且大的入口和大的出口可与与传感器可操作地连接的通道连通。出口在电阻构件的下游。柔性紧固件可以与电阻件和保持件接合，以方便安装。电阻器构件还可以包括小的流体通道的螺旋排列以促进层流。

7. 发明授权

US4996605A Method and apparatus for image scanning input for an image scanning recording apparatus 失效
标题翻译：用于图像扫描记录装置的图像扫描输入的方法和装置
公开(公告)号：US4996605A
公开(公告)日：1991-02-26
申请号：US497834
申请日：1990-03-22
申请人： Yoshihiro Taniguchi , Hideaki Hashimoto
发明人： Yoshihiro Taniguchi , Hideaki Hashimoto
IPC分类号： H04N1/19 , G03F3/08 , H04N1/047 , H04N1/06 , H04N1/407 , H04N1/46 , H04N1/48 , H04N1/60
CPC分类号： H04N1/047 , H04N1/0657 , H04N1/6033 , H04N1/06 , H04N2201/0404 , H04N2201/044 , H04N2201/04729 , H04N2201/04731
摘要： An image input apparatus for an image scanning reading apparatus comprises a cylindrical holder for holding a plurality of originals and reference portions for calibration serving as references in reading original, a scanning head for scanning the original holder, and a memory for storing positions of the reference portions for calibration. The position of the reference portion for calibration is stored prior to the reading of the original, and when the scanning is started, the scanning head is moved to the stored position, the reference data for calibration is read by the scanning head at that position, and the corresponding original is read based on the data.

8. 发明授权

US09557359B2 Device, method and program for determining misplacement of a current transformer on a power line 有权
标题翻译：用于确定电流互感器在电力线路上的错位的装置，方法和程序
公开(公告)号：US09557359B2
公开(公告)日：2017-01-31
申请号：US14765198
申请日：2013-02-14
申请人： Masahiro Ishihara , Satoshi Endo , Yoshiaki Koizumi , Shinsaku Kusube , Masaki Takata , Yoshihiro Taniguchi
发明人： Masahiro Ishihara , Satoshi Endo , Yoshiaki Koizumi , Shinsaku Kusube , Masaki Takata , Yoshihiro Taniguchi
IPC分类号： G01R19/00 , G01R25/00 , G01R29/18 , G01R15/18 , G01R31/02
CPC分类号： G01R25/005 , G01R15/142 , G01R15/18 , G01R29/18 , G01R31/02
摘要： A voltage/current verifier computes, for each phase, a phase difference between phase voltage and phase current from the phase of phase voltage and the phase of phase current computed for each phase by a phase acquirer, and determines conformity if all of the computed phase differences are within a preset range. A current/current verifier computes phase differences between phase currents from the phase of phase current computed for each phase by the phase acquirer, and determines conformity if all of the computed phase differences are less than 180°. A reporting device reports that a current transformer is incorrectly placed on a power line unless both the voltage/current verifier and the current/current verifier do not determine conformity.
摘要翻译：电压/电流验证器针对每相进行相位电压与相电流相位之间的相位差，以及由相位获取器为每相计算的相电流相位，并且如果所有计算相位差异在预设范围内。电流/电流验证器根据相位获取器计算每相的相电流相位之间的相位差，并且如果所计算出的所有相位差都小于180°，则确定其一致性。报告设备报告说，电流互感器不正确放置在电源线上，除非电压/电流验证器和当前/当前验证器都不确定一致性。

9. 发明授权

US07381632B2 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 失效
公开(公告)号：US07381632B2
公开(公告)日：2008-06-03
申请号：US11190707
申请日：2005-07-26
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01L21/36
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

10. 发明申请

US20080084901A1 Semiconductor thin film crystallization device and semiconductor thin film crystallization method 审中-公开
标题翻译：半导体薄膜结晶装置和半导体薄膜结晶方法
公开(公告)号：US20080084901A1
公开(公告)日：2008-04-10
申请号：US11982568
申请日：2007-11-02
申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
发明人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
IPC分类号： H01S3/10 , H01L31/0248
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0622 , B23K26/0732 , B23K26/0738 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/6675 , H01L29/78672 , H01L29/78696
摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
摘要翻译：第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点配置到第一束斑并且包含第一束斑。在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

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