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1. 发明授权

US6151914A Method and apparatus for producing super clean air 失效
标题翻译：生产超洁净空气的方法和设备
公开(公告)号：US6151914A
公开(公告)日：2000-11-28
申请号：US152688
申请日：1998-09-14
申请人： Masashi Mizuno , Masuo Tada , Norio Yamazaki , Toshiaki Ohmori
发明人： Masashi Mizuno , Masuo Tada , Norio Yamazaki , Toshiaki Ohmori
IPC分类号： B01D53/04 , B01D53/00 , B01D53/02 , F04B27/10 , F25J3/04 , F25J1/00
CPC分类号： F25J3/044 , B01D53/002 , B01D53/02 , F25J3/04284 , F25J3/04527 , F25J3/04563 , F25J3/04612 , F25J3/04636 , F25J2205/60 , F25J2215/40 , F25J2215/42 , Y10S62/909
摘要： Super clean air suitable for use in a tunnel-type wafer transport system, etc., is produced efficiently with the specific energy consumption reduced and the yield improved by making good use of part of cooling energy and gas produced in a low temperature separation type nitrogen producing apparatus. Material air 1a collected from the atmosphere is pretreated in a room temperature adsorption tower 7, this pretreated air is adsorption treated at -60.degree. C. in a first low temperature adsorption tower 9, and the treated air 1c is further adsorption treated at -150.degree. C. in a second low temperature adsorption tower 10, thereby producing super clean air 1e containing not higher than 1 ppb of the chemical components other than nitrogen, oxygen and noble gases and having a dew point of not higher than -100.degree. C. The airs 1b and 1c are cooled in heat exchangers 12, 13 and 14 by utilizing cooling energy produced in the low temperature separation type nitrogen producing apparatus, that is, the low temperature gas 3f passed through an expansion turbine 38 from a rectifying tower 37.
摘要翻译：适用于隧道式晶片输送系统等的超洁净空气通过降低比能量消耗而有效地生产，并且通过充分利用部分冷却能量和在低温分离型氮气中产生的气体而提高产率生产设备。从大气中收集的原料空气1a在室温吸附塔7中进行预处理，该预处理空气在-60℃下在第一低温吸附塔9中进行吸附处理，经处理的空气1c进一步在-150处进行吸附处理在第二低温吸附塔10中，由此产生除了氮气，氧气和惰性气体以外并且露点不高于-100℃的不超过1ppb的化学成分的超洁净空气1e。空气1b和1c通过利用低温分离式氮气生成装置中产生的冷却能量，即从精馏塔37通过膨胀涡轮机38的低温气体3f而在热交换器12,13和14中冷却。

2. 发明授权

US4932168A Processing apparatus for semiconductor wafers 失效
标题翻译：半导体晶圆加工装置
公开(公告)号：US4932168A
公开(公告)日：1990-06-12
申请号：US177784
申请日：1988-04-05
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.
摘要翻译：用于半导体晶片的清洁方法和吸气方法包括在半导体晶片的表面喷砂冻结颗粒。用于半导体晶片的处理装置包括用于形成超细冷冻颗粒的装置和用于在半导体晶片的表面喷砂冻结颗粒以进行半导体晶片的吸气或清洁的装置。在本发明的一种形式中，冷冻颗粒是通过将一滴水喷入部分充满液氮的室中形成的，该室将液体冻结形成冰粒。在本发明的另一形式中，冷冻颗粒是通过将水雾喷入含有冷氮气的室中而形成的，该冷室将冻结雾形成冰粒。在本发明的另一形式中，冷冻颗粒是通过加热水以形成水蒸汽形成的，并将水蒸汽引入冷冻室，该冷冻室含有将蒸气冻结成超细颗粒的冷却剂的两相混合物。冷冻颗粒通过诸如氮气的气体通过喷射喷嘴在半导体晶片上喷砂。当冷冻颗粒用于吸气时，它们可以进一步包括研磨颗粒如二氧化硅粉末。

3. 发明授权

US5114748A Method of preparing or rubbing a substrate to be used in a LCD device by spraying it with uniformly sized droplets or frozen water 失效
标题翻译：在液晶显示装置中通过喷洒均匀的液体或冷冻水来制备或润滑基板的方法
公开(公告)号：US5114748A
公开(公告)日：1992-05-19
申请号：US647478
申请日：1990-11-29
申请人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
发明人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , Y10T428/1086
摘要： A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.
摘要翻译：通过喷嘴喷射液体以形成基本均匀尺寸的微小液滴的方法。将这些均匀的液滴喷入冷冻介质如液氮并冷冻，以形成均匀直径的冷冻颗粒。将冷冻的颗粒喷射到用于液晶显示装置的基板的表面上以使施加到表面上的液晶材料定向。

4. 发明授权

US5035750A Processing method for semiconductor wafers 失效
标题翻译：半导体晶片的加工方法
公开(公告)号：US5035750A
公开(公告)日：1991-07-30
申请号：US470372
申请日：1990-01-25
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include nuclei of particles such as silica powder.

5. 发明授权

US4869090A Method of processing base plate for magnetic disc 失效
标题翻译：磁盘基板处理方法
公开(公告)号：US4869090A
公开(公告)日：1989-09-26
申请号：US266705
申请日：1988-11-03
申请人： Masuo Tada , Kazuhiko Akamatsu , Takaaki Fukumoto , Toshiaki Ohmori , Tadashi Hyono
发明人： Masuo Tada , Kazuhiko Akamatsu , Takaaki Fukumoto , Toshiaki Ohmori , Tadashi Hyono
IPC分类号： F25C1/00 , G11B5/73 , G11B5/84
CPC分类号： G11B5/84 , F25C1/00
摘要： A method for forming a fine unevenness over a surface of a base plate (9) for a magnetic disc comprises the step of bombarding the surface of the base plate (9) with a jet of gas mixed with fine ice particles (4) that are formed by mixing a flow of fine pure water droplets from a spray (2) and a counter directed flow of nitrogen gas cooled by being bubbled through a quantity of liquid nitrogen held in a reservoir (6). The obtained unevenness can be controlled by varying the size of the ice particles, the jet pressure, the distance between the jet nozzle providing the size of the ice particle jet and the receiving surface of base plate (9), the duration of spraying and the spraying angle with respect to the base plate.
摘要翻译：在用于磁盘的基板（9）的表面上形成微细凹凸的方法包括用与微细冰颗粒（4）混合的气体射流轰击基板（9）的表面的步骤，通过混合来自喷雾（2）的细的纯水滴流和通过鼓泡通过保持在储存器（6）中的一定量的液氮而冷却的逆向氮气流。可以通过改变冰颗粒的尺寸，喷射压力，提供冰颗粒射流的尺寸的喷嘴与基板（9）的接收表面之间的距离，喷涂的持续时间和相对于基板喷射角度。

6. 发明授权

US5025597A Processing apparatus for semiconductor wafers 失效
标题翻译：半导体晶圆加工装置
公开(公告)号：US5025597A
公开(公告)日：1991-06-25
申请号：US470226
申请日：1990-01-25
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

7. 发明授权

US4974375A Ice particle forming and blasting device 失效
标题翻译：冰粒形成和喷砂装置
公开(公告)号：US4974375A
公开(公告)日：1990-12-04
申请号：US434982
申请日：1989-11-09
申请人： Masuo Tada , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/02 , B24C1/00 , B24C3/22 , F25C1/00 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67028 , B24C1/003 , B24C3/22 , F25C1/00
摘要： A solid surface cleaning device utilizes a jet of ice particles of ultrapure water for removing contaminants from a surface of a solid such as a semiconductor wafer. The electrical resistivity of ultrapure water stored in a tank is reduced by means of a gas such as dry air or carbon dioxide evolving into the water from a bubble tube disposed in the tank. The water whose resistivity is thus reduced is sprayed from a nozzle into an ice-making container which is refrigerated by the vaporization of a refrigerant discharged into the container. The fine ice particles that are thus generated in the container are sprayed and blasted from a jet spray nozzle onto the surface of the cleaned solid supported within a jet spray chamber. The air inside the chamber is exhausted by a blower together with the ice particles that have been ejected from the jet spray nozzle.
摘要翻译：固体表面清洁装置利用超纯水的冰颗粒射流来从诸如半导体晶片的固体的表面去除污染物。存储在罐中的超纯水的电阻率通过从设置在罐中的气泡管放入水中的气体例如干燥空气或二氧化碳减少。电阻率如此降低的水从喷嘴喷射到制冷容器中，该制冰容器通过排放到容器中的制冷剂的蒸发而冷藏。在容器中产生的细冰颗粒从喷射喷嘴喷射喷射到支撑在喷射喷雾室内的清洁固体的表面上。室内的空气与从喷射喷嘴喷射的冰颗粒一起被鼓风机排出。

8. 发明授权

US4820650A Introducing lattice defect with ice particles in semiconductor wafer 失效
标题翻译：在半导体晶片中引入具有冰颗粒的晶格缺陷
公开(公告)号：US4820650A
公开(公告)日：1989-04-11
申请号：US121357
申请日：1987-11-16
申请人： Akemi Nagae , Shinichi Satou , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Akemi Nagae , Shinichi Satou , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： H01L21/322 , H01L21/463
CPC分类号： H01L21/3221 , Y10S438/938
摘要： The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be provided on the semiconductor wafer without leaving a pollutant source of the semiconductor wafer.
摘要翻译：本发明采用冰将晶格缺陷引入到半导体晶片中，并通过离子化（24）并加速（25）冰颗粒，将冰颗粒引入半导体晶片，由此可以在半导体晶片上提供背面损伤而不会留下半导体晶片的污染源。

9. 发明授权

US5074083A Cleaning device using fine frozen particles 失效
标题翻译：使用精细冷冻颗粒清洁装置
公开(公告)号：US5074083A
公开(公告)日：1991-12-24
申请号：US653960
申请日：1991-02-12
申请人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C5/08 , H01L21/304
CPC分类号： B24C5/08 , B24C1/003
摘要： A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.
摘要翻译：使用精细冷冻颗粒的清洁装置对冷冻气氛中的液体进行雾化而产生的微细冷冻颗粒进行电荷控制，控制带电粒子的速度，方向和散度，使其撞击待清洁物体的期望部分。所有这些操作都以可变的真空度进行。因此，可以精确地控制粒子的速度，方向和发散度以及粒子粒径。

10. 发明授权

US4986216A Semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US4986216A
公开(公告)日：1991-01-22
申请号：US387062
申请日：1989-07-31
申请人： Toshiaki Ohmori , Takaaki Fukumoto
发明人： Toshiaki Ohmori , Takaaki Fukumoto
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67069
摘要： A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This arrangement ensures that the surface of the substrate is processed with a high degree of accuracy.
摘要翻译：半导体制造装置包括用于将反应气体均匀地供应到室中并将其均匀地从室排出的构件以及设置在基板的相对侧上的两个整流构件，用于使反应气体的流量和方向恒定。这种布置确保了基板的表面以高精度被加工。

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