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1. 发明授权

US4820650A Introducing lattice defect with ice particles in semiconductor wafer 失效
标题翻译：在半导体晶片中引入具有冰颗粒的晶格缺陷
公开(公告)号：US4820650A
公开(公告)日：1989-04-11
申请号：US121357
申请日：1987-11-16
申请人： Akemi Nagae , Shinichi Satou , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Akemi Nagae , Shinichi Satou , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： H01L21/322 , H01L21/463
CPC分类号： H01L21/3221 , Y10S438/938
摘要： The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be provided on the semiconductor wafer without leaving a pollutant source of the semiconductor wafer.
摘要翻译：本发明采用冰将晶格缺陷引入到半导体晶片中，并通过离子化（24）并加速（25）冰颗粒，将冰颗粒引入半导体晶片，由此可以在半导体晶片上提供背面损伤而不会留下半导体晶片的污染源。

2. 发明授权

US5074083A Cleaning device using fine frozen particles 失效
标题翻译：使用精细冷冻颗粒清洁装置
公开(公告)号：US5074083A
公开(公告)日：1991-12-24
申请号：US653960
申请日：1991-02-12
申请人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Itaru Kanno , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C5/08 , H01L21/304
CPC分类号： B24C5/08 , B24C1/003
摘要： A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.
摘要翻译：使用精细冷冻颗粒的清洁装置对冷冻气氛中的液体进行雾化而产生的微细冷冻颗粒进行电荷控制，控制带电粒子的速度，方向和散度，使其撞击待清洁物体的期望部分。所有这些操作都以可变的真空度进行。因此，可以精确地控制粒子的速度，方向和发散度以及粒子粒径。

3. 发明授权

US4986216A Semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US4986216A
公开(公告)日：1991-01-22
申请号：US387062
申请日：1989-07-31
申请人： Toshiaki Ohmori , Takaaki Fukumoto
发明人： Toshiaki Ohmori , Takaaki Fukumoto
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67069
摘要： A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This arrangement ensures that the surface of the substrate is processed with a high degree of accuracy.
摘要翻译：半导体制造装置包括用于将反应气体均匀地供应到室中并将其均匀地从室排出的构件以及设置在基板的相对侧上的两个整流构件，用于使反应气体的流量和方向恒定。这种布置确保了基板的表面以高精度被加工。

4. 发明授权

US4932168A Processing apparatus for semiconductor wafers 失效
标题翻译：半导体晶圆加工装置
公开(公告)号：US4932168A
公开(公告)日：1990-06-12
申请号：US177784
申请日：1988-04-05
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.
摘要翻译：用于半导体晶片的清洁方法和吸气方法包括在半导体晶片的表面喷砂冻结颗粒。用于半导体晶片的处理装置包括用于形成超细冷冻颗粒的装置和用于在半导体晶片的表面喷砂冻结颗粒以进行半导体晶片的吸气或清洁的装置。在本发明的一种形式中，冷冻颗粒是通过将一滴水喷入部分充满液氮的室中形成的，该室将液体冻结形成冰粒。在本发明的另一形式中，冷冻颗粒是通过将水雾喷入含有冷氮气的室中而形成的，该冷室将冻结雾形成冰粒。在本发明的另一形式中，冷冻颗粒是通过加热水以形成水蒸汽形成的，并将水蒸汽引入冷冻室，该冷冻室含有将蒸气冻结成超细颗粒的冷却剂的两相混合物。冷冻颗粒通过诸如氮气的气体通过喷射喷嘴在半导体晶片上喷砂。当冷冻颗粒用于吸气时，它们可以进一步包括研磨颗粒如二氧化硅粉末。

5. 发明授权

US5147466A Method of cleaning a surface by blasting the fine frozen particles against the surface 失效
标题翻译：通过喷射表面上的微细冷冻颗粒来清洁表面的方法
公开(公告)号：US5147466A
公开(公告)日：1992-09-15
申请号：US588806
申请日：1990-09-27
申请人： Toshiaki Ohmori , Itaru Kanno , Takaaki Fukumoto
发明人： Toshiaki Ohmori , Itaru Kanno , Takaaki Fukumoto
IPC分类号： B08B7/00 , B24C1/00 , H01L21/304
CPC分类号： B24C1/086 , B08B7/0092 , B24C1/003
摘要： To remove foreign matter (contaminants in the form of fine particles or a film of oil) deposited on a solid surface, fine frozen particles (0.01 .mu.m to 5 mm in diameter) are used. The fine frozen particles, together with chilled nitrogen, are jetted onto the surface of a solid by the pressure of a carrier gas (nitrogen (N.sub.2) gas). These fine frozen particles are produced by freezing a liquid such as water (super pure water) or alcohol. The hardness of the fine frozen particles is adjusted according to the type of liquid, the frozen freezing temperature and jetting temperature in order to control the damage to the surface of the solid. Low temperature cleaning (0.degree. to -150.degree. C.) in which fine frozen particles and chilled nitrogen are sprayed is achieved.
摘要翻译：为了除去沉积在固体表面上的杂质（微细颗粒或油膜的污染物），使用细小的冷冻颗粒（直径为0.01μm至5mm）。精细的冷冻颗粒与冷却的氮气一起通过载气（氮气（N 2）气）的压力喷射到固体的表面上。这些细小的冷冻颗粒是通过冷冻诸如水（超纯水）或醇的液体来制备的。根据液体的类型，冷冻的冻结温度和喷射温度来调节细小的冷冻颗粒的硬度，以便控制对固体表面的损伤。实现了低温清洗（0〜-150℃），其中喷洒细微的冷冻颗粒和冷却氮气。

6. 发明授权

US5114748A Method of preparing or rubbing a substrate to be used in a LCD device by spraying it with uniformly sized droplets or frozen water 失效
标题翻译：在液晶显示装置中通过喷洒均匀的液体或冷冻水来制备或润滑基板的方法
公开(公告)号：US5114748A
公开(公告)日：1992-05-19
申请号：US647478
申请日：1990-11-29
申请人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
发明人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , Y10T428/1086
摘要： A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.
摘要翻译：通过喷嘴喷射液体以形成基本均匀尺寸的微小液滴的方法。将这些均匀的液滴喷入冷冻介质如液氮并冷冻，以形成均匀直径的冷冻颗粒。将冷冻的颗粒喷射到用于液晶显示装置的基板的表面上以使施加到表面上的液晶材料定向。

7. 发明授权

US5035750A Processing method for semiconductor wafers 失效
标题翻译：半导体晶片的加工方法
公开(公告)号：US5035750A
公开(公告)日：1991-07-30
申请号：US470372
申请日：1990-01-25
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include nuclei of particles such as silica powder.

8. 发明授权

US4869090A Method of processing base plate for magnetic disc 失效
标题翻译：磁盘基板处理方法
公开(公告)号：US4869090A
公开(公告)日：1989-09-26
申请号：US266705
申请日：1988-11-03
申请人： Masuo Tada , Kazuhiko Akamatsu , Takaaki Fukumoto , Toshiaki Ohmori , Tadashi Hyono
发明人： Masuo Tada , Kazuhiko Akamatsu , Takaaki Fukumoto , Toshiaki Ohmori , Tadashi Hyono
IPC分类号： F25C1/00 , G11B5/73 , G11B5/84
CPC分类号： G11B5/84 , F25C1/00
摘要： A method for forming a fine unevenness over a surface of a base plate (9) for a magnetic disc comprises the step of bombarding the surface of the base plate (9) with a jet of gas mixed with fine ice particles (4) that are formed by mixing a flow of fine pure water droplets from a spray (2) and a counter directed flow of nitrogen gas cooled by being bubbled through a quantity of liquid nitrogen held in a reservoir (6). The obtained unevenness can be controlled by varying the size of the ice particles, the jet pressure, the distance between the jet nozzle providing the size of the ice particle jet and the receiving surface of base plate (9), the duration of spraying and the spraying angle with respect to the base plate.
摘要翻译：在用于磁盘的基板（9）的表面上形成微细凹凸的方法包括用与微细冰颗粒（4）混合的气体射流轰击基板（9）的表面的步骤，通过混合来自喷雾（2）的细的纯水滴流和通过鼓泡通过保持在储存器（6）中的一定量的液氮而冷却的逆向氮气流。可以通过改变冰颗粒的尺寸，喷射压力，提供冰颗粒射流的尺寸的喷嘴与基板（9）的接收表面之间的距离，喷涂的持续时间和相对于基板喷射角度。

9. 发明授权

US5336356A Apparatus for treating the surface of a semiconductor substrate 失效
标题翻译：用于处理半导体衬底的表面的设备
公开(公告)号：US5336356A
公开(公告)日：1994-08-09
申请号：US914326
申请日：1992-07-17
申请人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
发明人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , H01L21/00
CPC分类号： H01L21/02049
摘要： In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.
摘要翻译：在用于处理半导体衬底的表面的设备中，将氟化氢溶解在非水溶剂中，使无水氟化氢离子化，并使溶液蒸发。将溶液的蒸气引入到反应室中的半导体表面上以处理该表面。可以对半导体衬底进行诸如清洁和蚀刻的处理，而不会在表面上产生反应产物。

10. 发明授权

US5025597A Processing apparatus for semiconductor wafers 失效
标题翻译：半导体晶圆加工装置
公开(公告)号：US5025597A
公开(公告)日：1991-06-25
申请号：US470226
申请日：1990-01-25
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

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