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1. 发明授权

US5863325A Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal 失效
标题翻译：生产用于制备碳化硅单晶和单晶的高纯度碳化硅粉末的方法
公开(公告)号：US5863325A
公开(公告)日：1999-01-26
申请号：US534847
申请日：1995-09-27
申请人： Masashi Kanemoto , Shinobu Endo , Masao Hashimoto
发明人： Masashi Kanemoto , Shinobu Endo , Masao Hashimoto
IPC分类号： C01B31/36 , C30B23/00 , C30B29/36
CPC分类号： C01B31/36 , C30B23/00 , C30B29/36 , C01P2004/61 , C01P2006/80
摘要： A process for producing high purity silicon carbide uses a high purity tetraethoxysilane or the like as the silicon source and a novolak-type phenol resin or the like as the carbon source. The process comprises a step of forming silicon carbide in which silicon carbide powder is prepared by calcining a mixture of these sources in a non-oxidizing atmosphere, and a step of post-treating silicon carbide in which the silicon carbide powder thus obtained is treated by heating at a temperature of 2000.degree. to 2100.degree. C. for 5 to 20 minutes at least once while the silicon carbide powder is kept at a temperature of 1700.degree. or higher to lower than 2000.degree. C., to obtain silicon carbide powder having an average particle diameter of 10 to 500 .mu.m and a content of impurity elements of 0.5 ppm or less. The high purity silicon carbide powder is advantageously used as a material for producing an excellent silicon carbide single crystal having a decreased number of crystal defects.
摘要翻译：高纯度碳化硅的制造方法使用高纯度四乙氧基硅烷等作为硅源，酚醛清漆型酚醛树脂等作为碳源。该方法包括形成碳化硅的步骤，其中通过在非氧化性气氛中煅烧这些源的混合物制备碳化硅粉末，以及后处理碳化硅的步骤，其中由此获得的碳化硅粉末经过在2000℃〜2100℃的温度下加热5〜20分钟至少一次，同时将碳化硅粉末保持在1700℃以上且低于2000℃的温度，得到具有平均粒径为10〜500μm，杂质含量为0.5ppm以下。高纯度碳化硅粉末有利地用作生产具有减少的晶体缺陷数量的优异的碳化硅单晶的材料。

2. 发明授权

US4915737A Alloy target for manufacturing a magneto-optical recording medium 失效
公开(公告)号：US4915737A
公开(公告)日：1990-04-10
申请号：US188203
申请日：1988-04-29
申请人： Toshio Morimoto , Keizo Kazama , Yasuhiro Okajima , Yasuhiro Tsugita , Shinobu Endo
发明人： Toshio Morimoto , Keizo Kazama , Yasuhiro Okajima , Yasuhiro Tsugita , Shinobu Endo
IPC分类号： C22C19/00 , C22C28/00 , C22C38/00 , C23C14/16 , C23C14/34 , G11B11/10 , G11B11/105 , H01F10/12 , H01F10/13 , H01F41/18
CPC分类号： C23C14/165 , C23C14/3414 , G11B11/10589 , H01F10/126 , H01F10/135 , H01F41/183
摘要： An alloy target for making a magneto-optical recording medium by sputtering comprises an alloy containing 10 to 50 atom % of at least one rare earth element selected from among Sm, Nd, Gd, Tb, Dy, Ho, Tm and Er, with a balance consisting substantially of at least one transition metal selected from among Co, Fe and Ni. The alloy has a mixed structure composed of at least three phases of intermetallic compounds formed by the rare earth element and the transition metal.

3. 发明授权

US4946501A Alloy target for magneto-optical recording 失效
标题翻译：磁光记录合金目标
公开(公告)号：US4946501A
公开(公告)日：1990-08-07
申请号：US421958
申请日：1989-10-16
申请人： Tasuo Nate , Toshio Morimoto , Kouichi Oka , Shinobu Endo
发明人： Tasuo Nate , Toshio Morimoto , Kouichi Oka , Shinobu Endo
IPC分类号： B41M5/26 , C23C14/34 , G11B11/105 , H01F41/18
CPC分类号： G11B11/10586
摘要： An alloy target for magneto-optical recording having component and composition comprising 10 to 50 atom % of at least one rare earth element from Sm, Nd, Gd, Tb, Dy, Ho, Tm and Er, the balance being substantially at least one transition metal from Co, Fe and Ni, and having a mixed structure comprising a phase of intermetallic compound of the rare earth element and the transition metal and a fine mixed phase of the rare earth element and intermetallic compound of the rare earth element and the transition metal or having a mixed structure comprising the structure above and a phase of the rare earth element alone. The target has uniform composition and high strength free from cracking, etc., shows less composition difference between film and target and less change of the film composition with elapse of sputtering time.
摘要翻译：一种用于磁光记录的合金靶，其具有包含10至50原子％的来自Sm，Nd，Gd，Tb，Dy，Ho，Tm和Er的至少一种稀土元素的组分和组成，余量基本上至少为一个转变来自Co，Fe和Ni的金属，并且具有包含稀土元素的金属间化合物和过渡金属的相的混合结构以及稀土元素和稀土元素的金属间化合物和过渡金属的微细混合相或具有包含上述结构的混合结构和单独的稀土元素的相。目标具有均匀的组成和高的无裂纹强度等，膜和靶之间的组成差异较小，溅射时间随着膜组成变化较小。

4. 发明授权

US4992095A Alloy target used for manufacturing magneto-optical recording medium 失效
标题翻译：用于制造磁光记录介质的合金靶
公开(公告)号：US4992095A
公开(公告)日：1991-02-12
申请号：US426710
申请日：1989-10-26
申请人： Tasuo Nate , Toshio Morimoto , Shinobu Endo
发明人： Tasuo Nate , Toshio Morimoto , Shinobu Endo
IPC分类号： G11B11/105
CPC分类号： G11B11/10586
摘要： An alloy target used for manufacturing a magneto-optical recording medium, wherein the component and composition comprises 10-50 atom % of at least one of rare earth elements selected from the group consisting of Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm, from 0.1 to 10 atom % of at least one of additive elements selected from the group consisting of B, Al, Si, P, Ti, V, Cr, Mn, Zr, Nb, Mo, Hf, Ta, W, Pt, Pb and Bi and the balance substantially composed of at least one of transition metals selected from the group consisting of Co, Fe and Ni; and a structure comprises any one of mixed structure from a group consisting of (1) a mixed structure comprising a phase of intermetallic compound of rare earth element--additive element--transition metal, and a fine mixed phase of rare earth element and intermetallic compound of rare earth element--transition metal, (2) a mixed structure comprising a phase of intermetallic compound of rare earth element--transition metal and a fine mixed phase of rare earth element and intermetallic compound of rare earth element--transition metal (at least one of the rare earth element and the intermetallic compound in the fine mixed phase contains additive element); (3) a mixed phase comprising a phase of intermetallic compound of rare earth element--transition metal and a phase of intermetallic compound of rare earth element--additive element; (4) a mixed structure comprising any one of the mixed structures (1), (2) and (3) above and a phase of rare earth element alone; and (5) a mixed structure of any one of the mixed structures comprising a phase of intermetallic compound of rare earth element--additive element--transition metal, and a phase of rare earth element alone; in which the phase of the transition metal alone is not substantially present.
摘要翻译：用于制造磁光记录介质的合金靶，其中所述组分和组合物包含10-50原子％的选自Nd，Sm，Gd，Tb，Dy，Ho中的至少一种稀土元素， Er和Tm，0.1〜10原子％的选自B，Al，Si，P，Ti，V，Cr，Mn，Zr，Nb，Mo，Hf，Ta，W中的至少一种添加元素，Pt，Pb和Bi，余量基本上由选自Co，Fe和Ni中的至少一种过渡金属组成; 并且结构包括以下混合结构中的任一种：（1）包含稀土元素添加元素 - 过渡金属的金属间化合物的相的混合结构和稀土元素与金属间化合物的微细混合相稀土元素过渡金属，（2）稀土元素过渡金属的金属间化合物相和稀土元素的微细混合相和稀土元素过渡金属的金属间化合物的混合物（以下的至少一种稀土元素和精细混合相中的金属间化合物含有添加元素）。（3）包含稀土元素 - 过渡金属的金属间化合物相和稀土元素添加元素的金属间化合物相的混合相，（4）包含上述混合结构（1），（2）和（3）中任一项的混合结构和单独的稀土元素的相; 和（5）包含稀土元素 - 添加元素 - 过渡金属的金属间化合物相和单独的稀土元素相的混合结构中的任一种的混合结构; 其中单独的过渡金属的相基本上不存在。

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