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1. 发明申请

US20080122151A1 Levitation unit with a tilting function and levitation device 审中-公开
标题翻译：悬浮单元具有倾斜功能和悬浮装置
公开(公告)号：US20080122151A1
公开(公告)日：2008-05-29
申请号：US11723306
申请日：2007-03-19
申请人： Masashi Ito , Hisanobu Niwa , Masaki Saito
发明人： Masashi Ito , Hisanobu Niwa , Masaki Saito
IPC分类号： F16C32/06
CPC分类号： F16C32/06
摘要： A rocking substrate 31 provided with a porous unit 41 is supported by a platform 21 by means of a spherical bearing. Furthermore, air is provided between the platform 21 and the rocking substrate 31 to allow the rocking substrate 31 and the porous unit 41 to rock along a spherical surface. This rocking allows the top surface 12a of an improved levitation unit 12 to tilt freely. When a wavy glass substrate is placed on the levitation device, the top surface 12a of the improved levitation unit 12 tilts, tracing the tilt of the substrate. Jetting air out in this state levitates the substrate, with its top surface 12a in the horizontal state, and allows the levitational force to be reliably applied to the substrate.
摘要翻译：设置有多孔单元41的摆动基板31由平台21通过球面轴承支撑。此外，在平台21和摇摆基板31之间设置空气，以使摇摆基板31和多孔单元41沿球面滚动。该摇摆允许改进的悬浮单元12的顶表面12a自由倾斜。当波纹玻璃基板被放置在悬浮装置上时，改进的悬浮单元12的顶表面12a倾斜，跟踪基板的倾斜。在这种状态下喷射空气使基板浮起，其顶表面12a处于水平状态，并且允许悬浮力可靠地施加于基板。

2. 发明授权

US08344575B2 Stator and manufacturing method thereof 有权
标题翻译：其定子及其制造方法
公开(公告)号：US08344575B2
公开(公告)日：2013-01-01
申请号：US12812701
申请日：2009-07-10
申请人： Kiyotaka Koga , Masaki Saito
发明人： Kiyotaka Koga , Masaki Saito
IPC分类号： H02K3/28
CPC分类号： H02K15/085 , H02K3/12 , H02K15/0031 , H02K15/0421 , H02K15/0478 , H02K15/064 , H02K15/067 , Y10T29/49009
摘要： The disclosed embodiments relate to a stator and manufacturing method of the stator in which the coil conducts of the stator have three phases (a U phase, V phase, and W phase), which are arranged in a distributed winding form in a plurality of slots of a stator core. The coil conductors of the three phases each include a slot conductor portion that is disposed in the slot, and a pair of coil end conductor portions disposed on both axial sides of the stator core to connect the slot conductor portions disposed in the different slots. The stator also includes a first side transition wire portion in each phase that is disposed further toward a radial inner side than an inner peripheral end surface of a tooth provided on each circumferential side of the slot so as to overlap another first side transition wire portions in the axial direction.
摘要翻译：所公开的实施例涉及定子的定子和制造方法，其中定子的线圈导通具有三相（U相，V相和W相），它们以分布式绕组形式布置在多个槽中的定子铁芯。三相的线圈导体各自包括设置在槽中的槽导体部分和一对线圈端导体部分，其设置在定子芯的两个轴向两侧，以连接设置在不同槽中的槽导体部分。定子还包括每相中的第一侧过渡金属线部分，该第一侧过渡金属线部分设置成比设置在槽的每个周向侧上的齿的内周端面更靠近径向内侧，以便与另一个第一侧过渡金属线部分重叠轴向。

3. 外观设计

USD639017S1 Neck warmer with removable belt 有权
标题翻译：颈部加热带可拆卸皮带
公开(公告)号：USD639017S1
公开(公告)日：2011-06-07
申请号：US29347325
申请日：2009-12-07
申请人： Masaki Saito , Hiromi Inui , Shinji Oda
设计人： Masaki Saito , Hiromi Inui , Shinji Oda

4. 发明授权

US07871878B2 Method of fabricating PMOS and NMOS transistor on the same substrate 有权
标题翻译：在同一衬底上制造PMOS和NMOS晶体管的方法
公开(公告)号：US07871878B2
公开(公告)日：2011-01-18
申请号：US12425476
申请日：2009-04-17
申请人： Junli Wang , Toyotaka Kataoka , Masaki Saito
发明人： Junli Wang , Toyotaka Kataoka , Masaki Saito
IPC分类号： H01L21/8238 , H01L27/118
CPC分类号： H01L27/1203 , H01L21/2007 , H01L21/823807 , H01L21/84 , H01L29/7842 , H01L29/78684
摘要： A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.
摘要翻译：一种制造半导体器件的方法，其包括在衬底上的第一和第二器件区域。该方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上层压具有不同于衬底表面的平面取向的第一半导体层，并通过从绝缘层上除去绝缘层和第一半导体层而暴露衬底第二设备区域。具有与衬底相同的平面取向并由应变层制成的第二半导体层通过在第二器件区域中暴露的衬底上外延生长而形成。

5. 发明申请

US20090221134A1 Semiconductor Device and Method of Manufacturing Semiconductor Device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090221134A1
公开(公告)日：2009-09-03
申请号：US12425476
申请日：2009-04-17
申请人： Junli Wang , Toyotaka Kataoka , Masaki Saito
发明人： Junli Wang , Toyotaka Kataoka , Masaki Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/1203 , H01L21/2007 , H01L21/823807 , H01L21/84 , H01L29/7842 , H01L29/78684
摘要： A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.
摘要翻译：一种制造半导体器件的方法，其包括在衬底上的第一和第二器件区域。该方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上层压具有不同于衬底表面的平面取向的第一半导体层，并通过从绝缘层上除去绝缘层和第一半导体层而暴露衬底第二设备区域。具有与衬底相同的平面取向并由应变层制成的第二半导体层通过在第二器件区域中暴露的衬底上外延生长而形成。

6. 发明申请

US20080227172A1 SIALYLTRANSFERASE AND DNA ENCODING THE SAME 审中-公开
标题翻译： SIALYLTRANSFERASE和编码它的DNA
公开(公告)号：US20080227172A1
公开(公告)日：2008-09-18
申请号：US11771606
申请日：2007-06-29
申请人： Masaki Saito
发明人： Masaki Saito
IPC分类号： C12N9/10
CPC分类号： C12N9/1081
摘要： A sialyltransferase having the following physico-chemical properties: (1) Activity; transfers sialic acid from a sialic acid donor selectively to a 3-hydroxyl group of a galactose residue contained in lactosylceramide as a sialic acid acceptor to produce ganglioside GM3; (2) Optimal reaction pH: 6.0 to 7.0; and (3) Inhibition and activation: the activity increases at least 1.5 times with 10 mM of Mn2+ as compared with the case in the absence thereof.
摘要翻译：具有以下物理化学性质的唾液酸转移酶：（1）活性; 将唾液酸供体选择性地将唾液酸转移到作为唾液酸受体的乳糖神经酰胺中含有的半乳糖残基的3-羟基，以产生神经节苷脂G M3; （2）最佳反应pH：6.0〜7.0; 和（3）抑制和活化：与没有其的情况相比，活性增加至少1.5倍，10mM的Mn 2+ 2 +。

7. 发明授权

US06666677B1 Piezoelectric gas lighter 失效
标题翻译：压电式气体打火机
公开(公告)号：US06666677B1
公开(公告)日：2003-12-23
申请号：US09711817
申请日：2000-11-13
申请人： Toshihiro Ichikawa , Masaki Saito
发明人： Toshihiro Ichikawa , Masaki Saito
IPC分类号： F23Q228
CPC分类号： F23Q2/164
摘要： A piezoelectric gas lighter includes a lighter body. The fuel gas in the lighter body is supplied to a nozzle through a valve mechanism which is opened and closed by an actuator lever and a piezoelectric unit ignites the fuel gas discharged from the nozzle. A depression member actuates the actuator lever and the piezoelectric unit to open the valve mechanism and ignite the fuel gas discharged from the nozzle in response to depression of the depression controller. The depression member includes a control cap operatively connected to a piezoelectric unit, a stopper member which is movable between a locking position where the control cap is prevented from being depressed and a releasing position where the control cap is permitted to be depressed and an urging member which urges the stopper member to the locking position. The stopper member is provided with a pair of sliding portions extending back and forth on opposite sides of the control cap and the sliding portions are slidably supported by the control cap so that the stopper member is movable downward together with the control cap and movable between the locking position and the releasing position. The urging member includes a pair of resilient pieces provided on opposite sides of the control cap so that they are engaged with the sliding portions of the stopper member to urge the stopper member to the locking position and the stopper member is moved to the releasing position by urging the stopper member toward the control cap.
摘要翻译：压电式气体打火机包括打火机。打火机中的燃料气体通过致动器杆打开和关闭的阀机构供给喷嘴，压电单元点燃从喷嘴排出的燃料气体。按压部件驱动致动器杠杆和压电单元以打开阀机构，并且响应于凹陷控制器的按压而点燃从喷嘴排出的燃料气体。凹陷构件包括可操作地连接到压电单元的控制帽，止动构件，其能够在防止控制帽被压下的锁定位置和允许控制帽被压下的释放位置之间移动;以及推动构件其将止动件推动到锁定位置。止动构件设置有一对在控制盖的相对侧上前后延伸的滑动部分，并且滑动部分由控制盖可滑动地支撑，使得止动构件可与控制盖一起向下移动，锁定位置和释放位置。推动构件包括设置在控制盖的相对侧上的一对弹性片，使得它们与止动构件的滑动部分接合以将止动构件推动到锁定位置，并且止动构件通过将止动件推向控制帽。

8. 发明授权

US5545436A CVD method and apparatus for making silicon oxide films 失效
标题翻译： CVD法和制造氧化硅膜的装置
公开(公告)号：US5545436A
公开(公告)日：1996-08-13
申请号：US336054
申请日：1994-11-04
申请人： Masaki Saito
发明人： Masaki Saito
IPC分类号： C23C14/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23F4/00 , H01L21/205 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/402 , C23C16/45519 , C23C16/45561 , C23C16/45595 , H01L21/02164 , H01L21/02271 , H01L21/31608
摘要： A CVD system for accomplishing deposition of a silicon oxide film on a wafer which is moved in a predetermined direction, under a reaction between an organic Si source and O.sub.3. The CVD system comprises a gas injector having a first slit for ejecting a gas containing O.sub.3, a second slit for ejecting a gas which is inert to a reaction between the organic Si source and O.sub.3, a third slit for ejecting a gas containing the organic Si source, a fourth slit for ejecting a gas which is inert to the reaction, a fifth slit for ejecting a gas containing the organic Si source, a sixth slit for ejecting a gas which is inert to the reaction, and a seventh slit for ejecting a gas containing O.sub.3. Additionally, the first to seventh slits are arranged in the order named in the predetermined wafer moving direction. This CVD system improves the characteristics and quality of silicon oxide film deposited on the wafer while lowering a so-called substrate dependency of the deposited film.
摘要翻译：用于在有机Si源和O 3之间的反应下在预定方向上移动的晶片上实现氧化硅膜的沉积的CVD系统。 CVD系统包括气体喷射器，其具有用于喷射含有O 3的气体的第一狭缝，用于喷射对有机Si源和O 3之间的反应是惰性的气体的第二狭缝，用于喷射含有有机Si的气体的第三狭缝源，用于喷射对反应呈惰性的气体的第四狭缝，用于喷射含有有机Si源的气体的第五狭缝，用于喷射对反应呈惰性的气体的第六狭缝和用于喷射含O3的气体。此外，第一至第七狭缝按照预定晶片移动方向的顺序排列。该CVD系统改善沉积在晶片上的氧化硅膜的特性和质量，同时降低沉积膜的所谓衬底依赖性。

9. 发明授权

US5492735A Process for plasma deposition 失效
标题翻译：等离子体沉积工艺
公开(公告)号：US5492735A
公开(公告)日：1996-02-20
申请号：US294409
申请日：1994-08-23
申请人： Masaki Saito
发明人： Masaki Saito
IPC分类号： C23C16/52 , C23C16/44 , C23C16/50 , C23C16/509 , H01L21/205 , H01L21/31 , H01L21/316 , B05D3/06
CPC分类号： C23C16/5096 , C23C16/4405 , C23C16/50
摘要： A process for plasma deposition is disclosed, which permits increasing the plasma deposition processing capacity.In a single substrate processing plasma CVD apparatus, chamber plasma cleaning II is done once for every plural deposition cycles I. If necessary, for each deposition cycle the intensity of the electric field applied between pair electrodes is varied (for instance, increased to an extent corresponding to the deposition capacity reduction).
摘要翻译：公开了一种用于等离子体沉积的方法，其允许提高等离子体沉积处理能力。在单个衬底处理等离子体CVD装置中，每隔多个沉积循环I对室等离子体清洁II进行一次。如果需要，对于每个沉积循环，施加在对电极之间的电场强度变化（例如，增加到一定程度对应于沉积容量降低）。

10. 发明授权

US5326256A Igniting device 失效
标题翻译：点火装置
公开(公告)号：US5326256A
公开(公告)日：1994-07-05
申请号：US910164
申请日：1992-09-03
申请人： Tsutomu Shike , Toshihiko Eguchi , Masaki Saito
发明人： Tsutomu Shike , Toshihiko Eguchi , Masaki Saito
IPC分类号： F23Q1/00 , F23Q2/28 , F24C15/00 , F23Q7/12
CPC分类号： F23Q2/287
摘要： A gas reservoir, a valve mechanism for controlling gas supply from the reservoir and a piezoelectric unit are incorporated into a body portion assembly. A rod portion is formed by connecting a hard gas pipe to a gas injection nozzle provided in a tip of a rod-like metal tubular member and electrically connecting the gas injection nozzle on one end of the gas pipe and a terminal member on the other end of the same by way of a wire which extends through the gas pipe. The body portion assembly and the rod portion are assembled into a unit by engaging the base portion of the rod portion with an engagement portion of the body portion assembly, thereby connecting the gas pipe in the rod portion to the valve mechanism in the body portion assembly and electrically connecting the metal tubular member in the rod portion to the piezoelectric unit in the body portion assembly.
摘要翻译： PCT No.PCT / JP91 / 01666 Sec。 371日期：1992年9月3日 102（e）日期1992年9月3日PCT 1991年11月29日PCT公布。公开号WO92 / 09852 日期：1992年6月11日。气体储存器，用于控制从储存器供应的气体的阀机构和压电单元并入主体部分组件中。通过将硬气体管道连接到设置在杆状金属管状构件的前端中的气体注入喷嘴并将气体管道的一端上的气体注入喷嘴与另一端的端子构件电连接而形成杆部分通过延伸穿过气体管道的导线相同。主体部分组件和杆部分通过将杆部的基部与本体部组件的接合部接合而组装成单元，从而将杆部中的气体管连接到主体部组件中的阀机构并且将所述杆部中的所述金属管状构件电连接到所述主体部组件中的所述压电单元。

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