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1. 发明申请

US20080099447A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080099447A1
公开(公告)日：2008-05-01
申请号：US11544051
申请日：2006-10-06
申请人： Makoto Ando , Takuichi Hirano , Yukihiko Nakata , Kazufumi Azuma , Masashi Goto , Atsushi Sasaki , Tetsuya Ide , Tetsuya Okamoto
发明人： Makoto Ando , Takuichi Hirano , Yukihiko Nakata , Kazufumi Azuma , Masashi Goto , Atsushi Sasaki , Tetsuya Ide , Tetsuya Okamoto
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of λ0>p>a2>b2 and p=(λg1/2)+±α (where α is 5% or below of λg1), where λ0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, εr1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and λg1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.
摘要翻译：多个电磁波辐射波导形成为从电磁波分布波导分支。向每个电磁波辐射波导提供多个槽。电磁波辐射波导的宽度，电磁波辐射波导的高度和电磁波辐射波导周期p被设定为满足λ<2> / SUB >> b 2和p =（λ1g1 / 2）+±α（其中α为λ1的5％或更低）），其中λ<0>是电磁波的自由空间波长，a1是电磁波分布波导的宽度，ε是电介质的介电常数电磁波分布波导中的材料，λ1g1是从电磁波分布波导中的电磁波源输出的电磁波的波长。

2. 发明授权

US07311796B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07311796B2
公开(公告)日：2007-12-25
申请号：US10681615
申请日：2003-10-08
申请人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
发明人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
IPC分类号： H01L21/306 , C23C16/00 , C23C14/34
CPC分类号： H01J37/32192 , C23C16/511
摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
摘要翻译：等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。

3. 发明申请

US20070034157A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070034157A1
公开(公告)日：2007-02-15
申请号：US11584566
申请日：2006-10-23
申请人： Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto , Masashi Goto
发明人： Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto , Masashi Goto
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192
摘要： Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.
摘要翻译：公开了一种用于执行等离子体处理的等离子体处理装置，包括用于产生电磁波的电磁波源，矩形波导，形成在矩形波导中并构成波导天线的多个槽，电磁波辐射窗，电介质体和真空室，其中通过电磁波辐射窗通过从槽辐射到真空室中的电磁波产生等离子体，等离子体处理装置被构造成包括用于分配电磁波的电磁波分配波导部分从电磁波源产生的每个波导的波形，多个波导从电场平面或与电磁波分配波导部分的磁场平面垂直的平面分支。

4. 发明申请

US20090029507A1 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method 审中-公开
标题翻译：电介质膜，其形成方法，使用电介质膜的半导体器件及其制造方法
公开(公告)号：US20090029507A1
公开(公告)日：2009-01-29
申请号：US11998202
申请日：2007-11-28
申请人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
发明人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
IPC分类号： H01L21/285 , H01L21/336
CPC分类号： H01L21/02164 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/31662 , H01L21/3185 , H01L21/32105 , H01L21/3211
摘要： A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.
摘要翻译：通过稀释稀有气体或提高供电频率，并产生高密度的氧原子或氮原子的方法，产生高电子密度的等离子体，形成高质量的电介质膜。电介质膜含有其中硅和氧的组成比在（1：1.94）和（1:2）之间的硅氧化物，其中硅和氮的组成比在（1：1.94）和（1：2）或硅氮组成比在（3：3.84）和（3：4）之间的氮氧化硅。

5. 发明申请

US20070105402A1 FILM-FORMING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND DISPLAY DEVICE 失效
标题翻译：薄膜形成方法，制造半导体器件的方法，半导体器件，制造显示器件的方法和显示器件
公开(公告)号：US20070105402A1
公开(公告)日：2007-05-10
申请号：US11619508
申请日：2007-01-03
申请人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
发明人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , C23C16/401 , G02F1/1368 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02274 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr
摘要翻译：公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比总压不小于85％，即85％

6. 发明授权

US07446060B2 Thin-film forming method using silane and an oxidizing gas 失效
标题翻译：使用硅烷和氧化气体的薄膜形成方法
公开(公告)号：US07446060B2
公开(公告)日：2008-11-04
申请号：US11619508
申请日：2007-01-03
申请人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
发明人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： H01L21/31
CPC分类号： H01L29/78696 , C23C16/401 , G02F1/1368 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02274 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr
摘要翻译：公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比总压不小于85％，即85％

7. 发明授权

US07307028B2 Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device 失效
标题翻译：薄膜形成方法，制造半导体器件的方法，半导体器件，制造显示器件的方法和显示器件
公开(公告)号：US07307028B2
公开(公告)日：2007-12-11
申请号：US10821843
申请日：2004-04-12
申请人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
发明人： Masashi Goto , Kazufumi Azuma , Yukihiko Nakata
IPC分类号： H01L21/31
CPC分类号： H01L29/78696 , C23C16/401 , G02F1/1368 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02274 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr
摘要翻译：公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比总压不小于85％，即85％

8. 发明申请

US20050257891A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050257891A1
公开(公告)日：2005-11-24
申请号：US10388849
申请日：2003-03-13
申请人： Masashi Goto , Yukihiko Nakata
发明人： Masashi Goto , Yukihiko Nakata
IPC分类号： C23C16/511 , C23C16/00 , C23F1/00 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/30 , H01L21/302 , H01L21/3065 , H05H1/00 , H05H1/30 , H05H1/46
CPC分类号： C23C16/511 , H01J37/32192 , H01J37/32238
摘要： There is provided a plasma treatment apparatus capable of treating a square shaped substrate having a large area even in the case of using reactive plasma, the plasma treatment apparatus including a waveguide 1, a waveguide antenna 2 made up of slots provided on the H-surface of the waveguide 1, an electromagnetic wave radiation window 4 made of a dielectric, a dielectric space 10 sandwiched between the waveguide 2 and the electromagnetic wave radiation window 4, and generating plasma by using the electromagnetic wave radiated from the waveguide antenna 2 through the electromagnetic wave radiation window 4, wherein an uneven portion 11 is provided on the surface of the waveguide 1 opposite to the electromagnetic wave radiation window 4.
摘要翻译：提供了即使在使用反应性等离子体的情况下也能够对具有大面积的方形基板进行处理的等离子体处理装置，该等离子体处理装置包括波导1，波导天线2，其由设置在H面上的槽波导管1由电介质构成的电磁波辐射窗4，夹在波导2和电磁波辐射窗4之间的电介质空间10，并通过电磁波使用从波导天线2辐射的电磁波产生等离子体波长辐射窗4，其中在波导1的与电磁波辐射窗4相对的表面上设置有不平坦部分11。

9. 发明授权

US08956740B2 Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus 有权
标题翻译：成膜油墨，成膜方法，液滴喷射装置，发光元件的制造方法，发光元件，发光装置及电子设备
公开(公告)号：US08956740B2
公开(公告)日：2015-02-17
申请号：US13213687
申请日：2011-08-19
申请人： Shotaro Watanabe , Masashi Goto
发明人： Shotaro Watanabe , Masashi Goto
IPC分类号： H01L51/54 , H01L51/56 , B05C5/00 , H01L51/00 , H01L51/50
CPC分类号： H01L51/0007 , H01L51/0039 , H01L51/5056 , Y10S428/917
摘要： A film-forming ink includes: film-forming materials containing a π-conjugated compounds; and a liquid medium which is capable of dissolving or dispersing the film-forming material and containing a compound represented by the following formula (I), wherein the compound is one in which the substituent of at least one of R1 to R6 is a linear or branched alkyl group, and the molecular structure of the one substituent is larger than the molecular structure of another substituent, and thus, the molecular weight of the whole molecule is biased towards the side where the one substituent is present.
摘要翻译：成膜油墨包括：含有共轭化合物的成膜材料; 和能够溶解或分散成膜材料并含有由下式（I）表示的化合物的液体介质，其中该化合物是其中R 1至R 6中的至少一个的取代基为直链或支链烷基，一个取代基的分子结构大于另一取代基的分子结构，因此整个分子的分子量偏向存在一个取代基的一侧。

10. 发明申请

US20120308327A1 APPARATUS TO ASSIST MOUNTING A BICYCLE COMPONENT 有权
标题翻译：帮助安装BICYCLE组件的设备
公开(公告)号：US20120308327A1
公开(公告)日：2012-12-06
申请号：US13150492
申请日：2011-06-01
申请人： Masashi Goto
发明人： Masashi Goto
IPC分类号： F16B39/24
CPC分类号： F16B39/32 , B62K19/38 , F16B39/24 , F16D2065/1396
摘要： A locking member has a first surface, a first mounting opening and a second mounting opening. Each first mounting opening and second mounting opening is dimensioned to receive the shank portion of a corresponding rotatable member therethrough so that a bottom surface of a head portion of the rotatable member faces toward the first surface of the locking member. A first extending member extends elastically relative to the first surface, wherein the first extending member is disposed in close proximity to the first mounting opening. When the rotatable member is in a mounting position in the first mounting opening, the first extending member contacts the head portion of the rotatable member to inhibit the rotatable member from rotating in a first direction, and the first extending member deflects elastically when the rotatable member rotates in a second direction opposite the first direction.
摘要翻译：锁定构件具有第一表面，第一安装开口和第二安装开口。每个第一安装开口和第二安装开口的尺寸被设计成容纳通过其中的相应的可旋转构件的柄部分，使得可旋转构件的头部的底表面朝向锁定构件的第一表面。第一延伸构件相对于第一表面弹性地延伸，其中第一延伸构件设置成紧邻第一安装开口。当可旋转构件处于第一安装开口中的安装位置时，第一延伸构件接触可旋转构件的头部，以阻止可旋转构件在第一方向上旋转，并且当可旋转构件沿与第一方向相反的第二方向旋转。

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