专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130208252A1 FLARE MEASURING METHOD, REFLECTIVE MASK, AND EXPOSURE APPARATUS 有权
标题翻译： FLARE测量方法，反射掩模和曝光装置
公开(公告)号：US20130208252A1
公开(公告)日：2013-08-15
申请号：US13597721
申请日：2012-08-29
申请人： Masaru SUZUKI , Nobuhiro KOMINE
发明人： Masaru SUZUKI , Nobuhiro KOMINE
IPC分类号： G03B27/54 , G02B5/08 , G01J1/04
CPC分类号： G02B5/08 , G03F7/70591 , G03F7/7085 , G03F7/70941
摘要： According to a flare measuring method in an embodiment, a reflective mask, in which one reflective coordinate in a slit direction in a mask surface is determined when one scanning coordinate is determined, is placed on a scanner that includes a reflective projection optical system. Moreover, a light intensity of the exposure light is measured by performing a scanning exposure on an illuminance sensor moved to a predetermined position in the slit direction in a slit imaging plane. Then, an amount of flare at an intra-slit position corresponding to a position of the illuminance sensor in the slit direction is calculated by using a light intensity of exposure light received from an intra-slit position that does not correspond to the position of the illuminance sensor in the slit direction in the exposure light.
摘要翻译：根据实施方式的闪光测量方法，在包括反射投影光学系统的扫描仪上放置反射掩模，其中在确定了一个扫描坐标时确定掩模表面中的狭缝方向上的一个反射坐标。此外，通过对在狭缝成像平面中移动到狭缝方向上的预定位置的照度传感器进行扫描曝光来测量曝光光的光强度。然后，通过使用从与狭缝方向的位置不对应的狭缝内位置接收的曝光光的光强度来计算在狭缝方向上对应于照度传感器的位置的狭缝内位置处的光束量照度传感器在曝光灯的狭缝方向。

2. 发明申请

US20110300472A1 Exposure Apparatus Inspection Mask and Exposure Apparatus Inspection Method 有权
标题翻译：曝光装置检查面具和曝光装置检查方法
公开(公告)号：US20110300472A1
公开(公告)日：2011-12-08
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro KOMINE , Kazuya Fukuhara
发明人： Nobuhiro KOMINE , Kazuya Fukuhara
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

3. 发明申请

US20080225254A1 PHOTOMASK, PHOTOMASK SUPERIMPOSITION CORRECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译： PHOTOMASK，PHOTOMASK超级校正方法和半导体器件的制造方法
公开(公告)号：US20080225254A1
公开(公告)日：2008-09-18
申请号：US12047516
申请日：2008-03-13
申请人： Nobuhiro KOMINE , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
发明人： Nobuhiro KOMINE , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
IPC分类号： G03B27/42 , G03F1/00
CPC分类号： G03F9/7076 , G03F1/36 , G03F1/42 , G03F7/70633
摘要： In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
摘要翻译：在其中在透光基底上形成器件图案，对准标记和叠加检查标记的光掩模中，每个对准标记和叠加检查标记都包括主标记部分和第一和第二辅助图案部分。主标记部分由空间图案和线条图案之一构成，该图形具有在半导体晶片上形成的感光膜上被分辨的线宽，并且第一和第二辅助图案部分中的每一个包括辅助图案由空间图案的重复图案和线图案的重复图案之一构成，重复图案具有在感光膜上不被分辨的线宽。重复图案的间距等于设备图案的最小间距。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式