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1. 发明授权

US6118172A High-frequency circuit device and manufacturing method thereof 失效
标题翻译：高频电路装置及其制造方法
公开(公告)号：US6118172A
公开(公告)日：2000-09-12
申请号：US602667
申请日：1996-02-16
申请人： Masao Yamawaki , Tatsuhiko Ikeda , Noriharu Suematsu , Yoshihiro Kashiba
发明人： Masao Yamawaki , Tatsuhiko Ikeda , Noriharu Suematsu , Yoshihiro Kashiba
IPC分类号： H01L29/73 , H01L21/3205 , H01L21/331 , H01L21/8222 , H01L21/8238 , H01L23/52 , H01L23/66 , H01L27/082 , H01L27/092 , H01L29/732 , H01L27/102 , H01C29/73
CPC分类号： H01L23/66 , H01L2924/0002 , H01L2924/3011
摘要： An epitaxial layer is formed on a main surface of a high specific resistance silicon substrate having a specific resistance of at least 100 .OMEGA.cm. A circuit element such as an active element is formed in epitaxial layer. An oxide film is formed such that it covers a surface of epitaxial layer. A metal interconnection layer is formed on a surface of oxide film. An oxide film is formed such that it covers metal interconnection layer. Thus, an inexpensive HF circuit device capable of reducing transmission loss of HF signals can be obtained.
摘要翻译：外延层形成在比电阻为至少100欧米亚厘米的高比电阻硅基板的主表面上。诸如有源元件的电路元件形成在外延层中。形成氧化膜，使其覆盖外延层的表面。在氧化膜的表面上形成金属互连层。形成氧化膜，使其覆盖金属互连层。因此，可以获得能够降低HF信号的传输损耗的便宜的HF电路装置。

2. 发明授权

US5893759A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5893759A
公开(公告)日：1999-04-13
申请号：US622641
申请日：1996-03-27
申请人： Tatsuhiko Ikeda , Shunji Kubo , Masao Yamawaki , Yasuki Yoshihisa
发明人： Tatsuhiko Ikeda , Shunji Kubo , Masao Yamawaki , Yasuki Yoshihisa
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L29/10 , H01L29/732 , H01L21/00
CPC分类号： H01L29/66272 , H01L29/1004 , H01L29/7322 , H01L21/26586
摘要： A depression having a depth not exceeding 0.1 .mu.m is formed on the surface of an epitaxial layer. An internal base region is formed just below the depression. An external base region is formed outside the depression. The depression having the above depth can suppress electric field at the end of the internal base in the neighborhood of the junction between the internal base region and the external base region.
摘要翻译：在外延层的表面上形成深度不超过0.1μm的凹陷。在凹陷下方形成内部基部区域。在凹部外形成外部基部区域。具有上述深度的凹陷可以抑制在内部基极区域和外部基极区域之间的接合附近的内部基底的端部处的电场。

3. 发明授权

US4894707A Semiconductor device having a light transparent window and a method of producing same 失效
标题翻译：具有透光窗的半导体装置及其制造方法
公开(公告)号：US4894707A
公开(公告)日：1990-01-16
申请号：US155598
申请日：1988-02-12
申请人： Masao Yamawaki , Takashi Kondo
发明人： Masao Yamawaki , Takashi Kondo
IPC分类号： H01L23/02 , H01L23/08 , H01L23/28 , H01L27/14 , H01L31/0203 , H04N5/335
CPC分类号： H01L31/0203 , H01L2224/48091 , H01L2224/48247 , H01L2924/01014 , H01L2924/01079 , H01L2924/1815
摘要： A semiconductor device having a light transparent window includes: a wall produced at an outer contour of a light receiving section on the surface of a semiconductor chip, the molding resin which is produced after a process of inserting the chip in a metal mold. The wall and the metal mold adhere with each other for producing a space between the chip and the metal mold so that a light transparent window is produced at a light introduction section in a separate position from the wall above the chip.
摘要翻译：具有透光窗的半导体器件包括：在半导体芯片的表面上的光接收部的外轮廓处产生的壁，在将芯片插入金属模具中的过程之后产生的模塑树脂。壁和金属模具彼此粘合以在芯片和金属模具之间产生空间，从而在与芯片上方的壁分开的位置处的光导入部分处产生光透明窗口。

4. 发明授权

US4707744A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4707744A
公开(公告)日：1987-11-17
申请号：US894022
申请日：1986-08-07
申请人： Masafumi Kimata , Masao Yamawaki , Satoshi Yamakawa
发明人： Masafumi Kimata , Masao Yamawaki , Satoshi Yamakawa
IPC分类号： H04N5/30 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/372 , H04N5/374 , H04N3/14
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A solid-state image sensor including pixels including photodetectors (111-148) for detecting light signals and charge sweep devices (210-240) for transferring signal charges. The pixels are arranged in first and second directions orthogonal to each other. A transfer gate scanning circuit (600) sequentially selects a pixel row from a plurality of pixel rows arranged in a second direction. A charge sweep device scanning circuit (700) supplies readout signals to the selected pixel rows so that signal charges may be read out, a plurality of times, within a horizontal scanning interval from the photodetectors (111-148).
摘要翻译：包括像素的固态图像传感器，包括用于检测光信号的光电检测器（111-148）和用于传送信号电荷的电荷扫描装置（210-240）。像素被布置在彼此正交的第一和第二方向上。传输门扫描电路（600）从沿第二方向排列的多个像素行顺序地选择像素行。电荷扫描装置扫描电路（700）向所选择的像素行提供读出信号，使得可以在来自光电检测器（111-148）的水平扫描间隔内多次读出信号电荷。

5. 发明授权

US5019884A Charge transfer device 失效
标题翻译：电荷转移装置
公开(公告)号：US5019884A
公开(公告)日：1991-05-28
申请号：US479271
申请日：1990-02-13
申请人： Masao Yamawaki
发明人： Masao Yamawaki
IPC分类号： G11C19/28 , G11C27/04 , H01L21/339 , H01L29/762 , H01L29/768 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/372 , H04N5/376
CPC分类号： H01L29/76841 , G11C19/285 , G11C27/04
摘要： In a charge transfer device including spaced apart channels on a semiconductor substrate, first electrodes are disposed in gaps between the channels, second electrodes are disposed opposite alternate channels overlapping the adjacent first electrodes, and a third continuous electrode overlies the alternating channels and first and second electrodes in the charge transfer direction. A first clock phase is obtained by connecting alternate first electrodes with the adjacent second electrode in the direction of charge transfer, and a second clock phase is obtained by connecting the remaining first electrodes with the third electrode. The portion of the first electrode overlapped by the second electrode in the second clock phase is larger than that in the first clock phase for stable driving by first and second clock signals out of phase by 180.degree. and generated by a driver including a resonance circuit.
摘要翻译：在半导体衬底上包括间隔开的通道的电荷转移装置中，第一电极设置在通道之间的间隙中，第二电极相对于与相邻第一电极重叠的交替通道设置，第三连续电极覆盖交替通道，第一和第二电极电极在电荷转移方向。通过在电荷转移方向上将交替的第一电极与相邻的第二电极连接而获得第一时钟相位，并且通过将剩余的第一电极与第三电极连接来获得第二时钟相位。在第二时钟相位中与第二电极重叠的第一电极的部分大于第一时钟相位的第一和第二时钟信号相位相差180°的稳定驱动的部分，并由包括谐振电路的驱动器产生。

6. 发明授权

US4831426A Solid state image sensing device and a method of manufacturing the same 失效
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US4831426A
公开(公告)日：1989-05-16
申请号：US890518
申请日：1986-07-30
申请人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
发明人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
IPC分类号： H01L31/00 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14887 , H01L27/14831
摘要： Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.
摘要翻译：扩散自对准MOS晶体管被施加到固态图像感测装置，以便以自对准方式形成控制区域（80），其中从形成在半导体（1）上的光信号检测区域（70）读取信号电荷，对电荷转移区域（30）进行控制。

7. 发明授权

US4096822A Gaseous atmosphere control apparatus for a semiconductor manufacturing system 失效
标题翻译：用于半导体制造系统的气体气氛控制装置
公开(公告)号：US4096822A
公开(公告)日：1978-06-27
申请号：US727772
申请日：1976-09-29
申请人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Osamu Ina , Kunihiko Hara
发明人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Osamu Ina , Kunihiko Hara
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C30B31/16 , H01L21/22 , C23C11/00
CPC分类号： C30B31/16 , C23C16/455 , C23C16/45578
摘要： A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.
摘要翻译：公开了一种用于均匀气氛条件下热处理半导体的气体气氛控制装置。控制装置设置有反应管，半导体晶片通过该反应管被转印以进行热处理。气体分配管固定到反应管的内壁，用于引导晶片的转移并在反应管中供应热处理气体。分配管设置有多个排气孔，其管道纵向延伸时，其直径变宽，从而控制反应管中的气态气体状态均匀。

8. 发明授权

US5399882A Camera device and method of manufacturing the same 失效
标题翻译：相机装置及其制造方法
公开(公告)号：US5399882A
公开(公告)日：1995-03-21
申请号：US77070
申请日：1993-06-16
申请人： Fumihiko Andoh , Kazunori Miyakawa , Hidekazu Yamamoto , Masao Yamawaki
发明人： Fumihiko Andoh , Kazunori Miyakawa , Hidekazu Yamamoto , Masao Yamawaki
IPC分类号： H01J9/233 , H01J29/45 , H01L27/146 , H01L31/08 , H04N5/335 , H04N5/369 , H01L29/18 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14665 , Y10S148/172
摘要： A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.
摘要翻译：提供了具有良好乘法特性（量子效率）以及可见光区域（特别是红色区域中的改善的灵敏度）的相机装置及其制造方法。相机装置包括空穴注入停止层，包括硒的第一光电转换层，具有与第一光电转换层不同的光谱灵敏度特性的第二光电转换层，包含硒的第三光电转换层和电子注射停止层。结果，可以同时提高乘法特性（量子效率）和提高可见光区域（特别是红色区域）的灵敏度。

9. 发明授权

US4788592A CSD type solid-state imaging device with means for draining excess charges 失效
标题翻译： CSD型固态成像装置，具有排出过量电荷的装置
公开(公告)号：US4788592A
公开(公告)日：1988-11-29
申请号：US130203
申请日：1987-12-08
申请人： Masao Yamawaki , Takashi Ito
发明人： Masao Yamawaki , Takashi Ito
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/359 , H04N5/369 , H04N5/372 , H04N3/14
CPC分类号： H04N3/1568 , H01L27/14831
摘要： A CSD type solid-state imaging device having horizontal transfer means for transferring charges stored at the storage electrodes in the horizontal direction and gates for selecting elements having excess charges and drains for draining the excess charges, both provided at the vertical transfer means at the neighbourhood of the storage electrode. The charges of a plurality of light-electricity conversion elements provided spaced apart from each other by a distance of more than two picture elements in the vertical direction are read out to the vertical transfer means within a same horizontal blanking period and signal charges corresponding to at least more than one picture element are drained to the drain through the gate while transferring the charges in the vertical direction.
摘要翻译： CSD型固态成像装置具有水平传送装置，用于传送在水平方向上存储在存储电极处的电荷和用于选择具有用于排出过量电荷的过量电荷和排水的元件的栅极，两者均设置在邻近的垂直传送装置的存储电极。在垂直方向上彼此间隔多于两个图像元素的多个光电转换元件的电荷在相同的水平消隐周期内被读出到垂直传送装置，并且对应于在在垂直方向上传送电荷时，至少一个以上的像素通过栅极排入漏极。

10. 发明授权

US4069009A Apparatus for transferring semiconductor wafers 失效
标题翻译：用于转移半导体晶圆的装置
公开(公告)号：US4069009A
公开(公告)日：1978-01-17
申请号：US730720
申请日：1976-10-08
申请人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Osamu Ina , Kinihiko Hara
发明人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Osamu Ina , Kinihiko Hara
IPC分类号： B65G35/00 , H01L21/50 , H01L21/677 , F27B9/14
CPC分类号： H01L21/67712 , B65G35/00 , H01L21/6773
摘要： An apparatus for automatically transferring semiconductor wafers is disclosed. Semiconductor wafers are loaded on a boat which is placed on a pair of first supporting bars. A pair of second supporting bars are driven by a motor to repeat circular motion between the first supporting bars. The second supporting bars, circularly moving in parallel with the first supporting bars, forwardly transfer the boat. The boat is kept uplifted over the first supporting bars during the forward transfer thereof. Repetition of the circular motion of the second supporting bars makes the automatic transfer of the semiconductor wafers to be heat-treated in a semiconductor manufacturing system.
摘要翻译：公开了一种用于自动转移半导体晶片的设备。将半导体晶片装载在放置在一对第一支撑杆上的船上。一对第二支撑杆由马达驱动以在第一支撑杆之间重复圆周运动。与第一支撑杆平行移动的第二支撑杆向前移动船。在向前转移期间，船在第一支撑杆上保持隆起。第二支撑杆的圆周运动的重复使半导体制造系统中半导体晶片的自动转印被热处理。

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