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1. 发明授权

US06507770B2 Substrate processing system and substrate processing method 有权
标题翻译：基板加工系统和基板加工方法
公开(公告)号：US06507770B2
公开(公告)日：2003-01-14
申请号：US09874272
申请日：2001-06-06
申请人： Masanori Tateyama , Kenichi Okubo , Jun Ookura
发明人： Masanori Tateyama , Kenichi Okubo , Jun Ookura
IPC分类号： G06F700
CPC分类号： H01L21/67276 , G05B19/41865 , G05B2219/31407 , G05B2219/32305 , G05B2219/45031 , Y02P90/20
摘要： A system for successively extracting unprocessed substrates from a cassette, successively conveying the extracted substrates to a plurality of processing units, causing the processing units to process the substrates, and successively returning processed substrates to a cassette is disclosed. In the system, corresponding to a recipe that contains process conditions for each of at least one lot, a process start prediction time at which processes of each lot start and a process completion prediction time at which processes for each lot are completed are calculated for at least two processes. Corresponding to the process start prediction time and the process completion prediction time, at least one of optimum processing units that optimize processes for each lot is selected for each lot.
摘要翻译：公开了一种用于从盒中连续提取未处理的基板的系统，将提取的基板连续地传送到多个处理单元，使处理单元处理基板，并将处理后的基板连续地返回到盒。在该系统中，对应于包含至少一批中的每一批的处理条件的配方，每批次的处理开始的处理开始预测时间和完成每个批次的处理的处理完成预测时间被计算为最少两个进程。对应于过程开始预测时间和处理完成预测时间，为每个批次选择优化每个批次的处理的最优处理单元中的至少一个。

2. 发明授权

US07755003B2 Temperature control for performing heat process on resist film 有权
标题翻译：对抗蚀膜进行热处理的温度控制
公开(公告)号：US07755003B2
公开(公告)日：2010-07-13
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
IPC分类号： C21D1/40 , H05B3/68 , H05B1/02
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译：在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及温度分布信息，从而确定调整信息。

3. 发明申请

US20080156785A1 TEMPERATURE CONTROL FOR PERFORMING HEAT PROCESS ON RESIST FILM 有权
标题翻译：用于执行耐腐蚀膜的热处理的温度控制
公开(公告)号：US20080156785A1
公开(公告)日：2008-07-03
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
IPC分类号： H01L21/00 , H05B3/68
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译：在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及温度分布信息，从而确定调整信息。

4. 发明申请

US20050170087A1 Coating film forming method and apparatus 有权
公开(公告)号：US20050170087A1
公开(公告)日：2005-08-04
申请号：US11091760
申请日：2005-03-29
申请人： Tomohide Minami , Shinichi Sugimoto , Takahiro Kitano , Jun Ookura , Hiroaki Kurishima
发明人： Tomohide Minami , Shinichi Sugimoto , Takahiro Kitano , Jun Ookura , Hiroaki Kurishima
IPC分类号： B05D1/00 , B05D1/02 , H01L21/00 , B05D3/12
CPC分类号： H01L21/6715 , B05D1/005 , B05D1/02
摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.

5. 发明授权

US06686571B2 Heat treatment unit, cooling unit and cooling treatment method 有权
标题翻译：热处理单元，冷却单元和冷却处理方法
公开(公告)号：US06686571B2
公开(公告)日：2004-02-03
申请号：US10237781
申请日：2002-09-10
申请人： Jun Ookura , Koji Harada
发明人： Jun Ookura , Koji Harada
IPC分类号： H05B102
CPC分类号： H01L21/67248 , G05B11/42 , G05D23/1917 , H01L21/67109
摘要： A substrate cooling unit comprises a cooling plate on which the substrate is placed, a cooling temperature adjusting element which adjusts the cooling plate to a predetermined temperature, a temperature controller which controls a temperature of the cooling temperature adjusting element according to a transfer function, a temperature sensor attached to the cooling plate, and a control parameter changing section which changes at least any one setting of a proportional operation coefficient, integral time or derivative time among control parameters in the transfer function based on a temperature of the cooling plate detected by the temperature sensor after the substrate that is an object to be cooled is placed on the cooling plate.
摘要翻译：基板冷却单元包括其上放置基板的冷却板，将冷却板调节到预定温度的冷却温度调节元件，根据传递函数来控制冷却温度调节元件的温度的温度控制器，温度传感器，其安装在冷却板上，以及控制参数变更部，其基于由所述冷却板检测出的所述冷却板的温度，在所述传递函数中的控制参数中的至少任一个比例运算系数，积分时间或微分时间的设定中进行变更将作为被冷却对象的基板后的温度传感器放置在冷却板上。

6. 发明申请

US20120031892A1 Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus 审中-公开
标题翻译：热处理方法，具有用于执行热处理方法的记录程序的记录介质和热处理装置
公开(公告)号：US20120031892A1
公开(公告)日：2012-02-09
申请号：US13192635
申请日：2011-07-28
申请人： Kenichi Shigetomi , Jun Ookura
发明人： Kenichi Shigetomi , Jun Ookura
IPC分类号： H05B3/68
CPC分类号： H05B1/0233 , H01L21/67248
摘要： Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.
摘要翻译：公开了一种包括第一工艺和第二工艺的热处理方法。第一晶片（初始晶片）W1和第二晶片（下一个晶片）W2（和随后的晶片W）之间的第一过程包括将加热板的设定温度从第一温度改变到低于第一温度的第二温度 ; 以及在所述加热板的温度达到第二温度之前对第一基板进行热处理。第二工序是在第一基板的第一工序结束后，将加热板的设定温度从第二温度变更为高于第二温度的第三温度; 以及在所述加热板的温度达到第三温度之后，当所述加热板的温度从第三温度变为第二温度时，对第二基板进行热处理。

7. 发明申请

US20050016818A1 Substrate processing apparatus and method for adjusting a substrate transfer position 有权
公开(公告)号：US20050016818A1
公开(公告)日：2005-01-27
申请号：US10859340
申请日：2004-06-03
申请人： Kazuhiko Ito , Kazutoshi Ishimaru , Jun Ookura , Michio Kinoshita , Yuichi Douki
发明人： Kazuhiko Ito , Kazutoshi Ishimaru , Jun Ookura , Michio Kinoshita , Yuichi Douki
IPC分类号： H01L21/68 , B05B12/12 , B05B13/02 , H01L21/00
CPC分类号： H01L21/67259 , B05B12/122 , B05B13/0228 , Y10S414/136
摘要： A substrate processing apparatus can align a substrate with a high precision and a high speed by monitoring a mark formed on a surface of the substrate; operating an amount of misalignment between the center of the substrate and a rotation center of a substrate support member; determining a presence of the misalignment and adjusting the substrate such that the center of the substrate coincides with the rotation center of the substrate support member.

8. 发明授权

US06654668B1 Processing apparatus, processing system, distinguishing method, and detecting method 有权
标题翻译：处理装置，处理系统，区分方法和检测方法
公开(公告)号：US06654668B1
公开(公告)日：2003-11-25
申请号：US09502580
申请日：2000-02-11
申请人： Koji Harada , Hisakazu Nakayama , Jun Ookura
发明人： Koji Harada , Hisakazu Nakayama , Jun Ookura
IPC分类号： G05D2300
CPC分类号： H01L21/67259 , H01L21/67248
摘要： The temperature of a hot plate is not more than a predetermined threshold when a wafer is accurately mounted at a substrate mounting position on the hot plate, whereas the temperature of the hot plate is the predetermined threshold when the wafer is not accurately mounted at the substrate mounting position on the hot plate. Therefore, when the temperature of the hot plate is not less than the predetermined threshold when the wafer is mounted on the hot plate, it is judged that the wafer is stranded on a guide, and an alarm is given by means of a speaker or a display section.
摘要翻译：当晶片准确地安装在热板上的基板安装位置时，热板的温度不超过预定的阈值，而当热晶片的温度不准确地安装在基板上时，热板的温度是预定的阈值安装位置在热板上。因此，当晶片安装在热板上时，当热板的温度不低于预定阈值时，判断晶片搁在引导件上，并通过扬声器或显示部分。

9. 发明授权

US06620245B2 Liquid coating apparatus with temperature controlling manifold 失效
标题翻译：带温控歧管的液体涂布设备
公开(公告)号：US06620245B2
公开(公告)日：2003-09-16
申请号：US09893707
申请日：2001-06-29
申请人： Seiki Ishida , Junichi Iwano , Jun Ookura , Michishige Saito
发明人： Seiki Ishida , Junichi Iwano , Jun Ookura , Michishige Saito
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , H01L21/67248
摘要： An apparatus for processing a substrate of the present invention comprises a holder holding a substrate, a supply pipe being supplied with a processing solution from a first end and supplying the processing solution to the substrate from a second end, a first temperature controller having a first temperature controlled water circulated inside which controls a first temperature around the second end of the supply pipe and a second temperature controller having a second temperature controlled water drained from the first temperature controller circulated inside, which controls a second temperature around the first end of the supply pipe. With such a configuration, the temperature controlled water used for controlling the temperature of the processing solution just before its application onto the substrate can be recycled for controlling the temperature of the processing solution just after being supplied to a supply pipe.
摘要翻译：本发明的基板的处理装置包括保持基板的保持器，从第一端供给处理液并从第二端向基板供给的供给管，第一温度控制器，具有第一循环在其内的温度控制的水控制围绕供应管的第二端的第一温度;以及第二温度控制器，具有从第一温度控制器排出的第二温度控制的水，该第一温度控制器在内部循环，第一温度控制水围绕供应的第一端控制第二温度管。通过这样的结构，用于控制刚刚施加到基板上的处理液的温度的温度控制水可以再循环，以便在供给到供给管之后控制处理溶液的温度。

10. 发明授权

US07868270B2 Temperature control for performing heat process in coating/developing system for resist film 有权
标题翻译：用于在抗蚀剂膜的涂布/显影系统中进行热处理的温度控制
公开(公告)号：US07868270B2
公开(公告)日：2011-01-11
申请号：US12022522
申请日：2008-01-30
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
IPC分类号： H05B3/68
CPC分类号： H01L21/67248 , H01L21/67178 , H01L21/67748
摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.
摘要翻译：在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度，其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。所述方法包括：获取调整数据，所述调整数据用于调整由用于将所述基板的温度从初始温度附近的第一温度升至围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。

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