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1. 发明申请

US20080213988A1 SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD 有权
标题翻译：基板加热装置和半导体制造方法
公开(公告)号：US20080213988A1
公开(公告)日：2008-09-04
申请号：US11951807
申请日：2007-12-06
申请人： Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
发明人： Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
IPC分类号： H01L21/425 , F26B19/00
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/67103 , H01L21/67109 , H01L29/0878 , H01L29/66068
摘要： A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
摘要翻译：具有用于加热放置在能够抽真空的处理室中的基板的加热单元的基板加热装置包括安装在加热单元和基板之间并且其上安装有基板的可变元件和安装成与夹在其间的基板相对的接收器，并且经由接收器从加热单元接收热量。形成通气部，其使形成在受热部件和基板之间的空间与处理室中的空间连通。

2. 发明授权

US07807553B2 Substrate heating apparatus and semiconductor fabrication method 有权
标题翻译：基板加热装置及半导体制造方法
公开(公告)号：US07807553B2
公开(公告)日：2010-10-05
申请号：US11951807
申请日：2007-12-06
申请人： Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
发明人： Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
IPC分类号： H01L21/265 , C23C16/00
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/67103 , H01L21/67109 , H01L29/0878 , H01L29/66068
摘要： A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
摘要翻译：具有用于加热放置在能够抽真空的处理室中的基板的加热单元的基板加热装置包括安装在加热单元和基板之间并且其上安装有基板的可变元件和安装成与夹在其间的基板相对的接收器，并且经由接收器从加热单元接收热量。形成通气部，其使形成在受热部件和基板之间的空间与处理室中的空间连通。

3. 发明申请

US20100111512A1 HEATING PROCESS APPARATUS 有权
标题翻译：加热过程装置
公开(公告)号：US20100111512A1
公开(公告)日：2010-05-06
申请号：US12613288
申请日：2009-11-05
申请人： Akira Kumagai , Masami Shibagaki , Kenji Numajiri , Akihiro Egami
发明人： Akira Kumagai , Masami Shibagaki , Kenji Numajiri , Akihiro Egami
IPC分类号： F27B5/06
CPC分类号： G01J5/60 , G01J5/62
摘要： An object of the present invention is to provide a heating process apparatus capable of being controlled to a constant temperature and to temperatures in a high-temperature range higher than or equal to a 1850 degrees. A heating process apparatus includes: a process chamber; a heat-processed object support member provided in the process chamber; a heater provided inside the heat-processed object support member; and temperature measuring means for measuring the temperature of the heat-processed object support member; wherein the temperature measuring means is provided outside a transmissive window provided in a peripheral wall of the process chamber and through which infrared energy radiated from the heat-processed object support member can be transmitted; and the temperature measuring means comprises a collector collecting infrared energy radiated from the heat-processed object support member and a calculating unit calculating temperature based on the ratio between the intensities of two wavelengths in the infrared.
摘要翻译：本发明的目的是提供一种加热处理装置，其能够被控制在高于或等于1850度的高温范围内的恒定温度和温度。一种加热处理装置，包括：处理室; 设置在处理室中的热处理对象支撑构件; 设置在热处理对象支撑部件内的加热器; 以及用于测量加热物体支撑构件的温度的温度测量装置; 其中所述温度测量装置设置在设置在所述处理室的周壁中的透射窗外部，并且可以透射从所述热处理对象支撑构件辐射的红外能量; 并且所述温度测量装置包括收集从所述热处理对象支撑构件辐射的红外能量的收集器，以及基于所述红外线中的两个波长的强度之间的比率来计算温度的计算单元。

4. 发明授权

US08150243B2 Heating process apparatus 有权
标题翻译：加热处理装置
公开(公告)号：US08150243B2
公开(公告)日：2012-04-03
申请号：US12613288
申请日：2009-11-05
申请人： Akira Kumagai , Masami Shibagaki , Kenji Numajiri , Akihiro Egami
发明人： Akira Kumagai , Masami Shibagaki , Kenji Numajiri , Akihiro Egami
IPC分类号： A21B2/00
CPC分类号： G01J5/60 , G01J5/62
摘要： A heating process apparatus includes a process chamber, a heat-processed object support member provided in the process chamber for heating a substrate disposed thereon, a cap for covering the substrate disposed on the heat-processed object support member, a heater for heating the heat-processed object support member, a temperature measuring unit for measuring the temperature of the heat-processed object support member, and a controller for controlling the heater. A first measuring unit measures a temperature of the cap, and the controller controls the heater so as to set the cap temperature to a predetermined temperature. A second measuring unit measures a temperature of the heat-processed object support member, and the controller turns off the heater when the temperature of the heat-processed object support member exceeds an over-heat critical temperature.
摘要翻译：加热处理装置包括处理室，设置在处理室中的用于加热其上设置的基板的热处理对象支撑构件，用于覆盖设置在热处理对象支撑构件上的基板的盖，用于加热热量的加热器加工对象支撑构件，用于测量加热对象支撑构件的温度的温度测量单元，以及用于控制加热器的控制器。第一测量单元测量盖的温度，并且控制器控制加热器，以将盖温度设定到预定温度。第二测量单元测量热处理对象支撑构件的温度，并且当热处理对象支撑构件的温度超过过热临界温度时，控制器关闭加热器。

5. 发明申请

US20100025695A1 ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：具有碳化硅基板和半导体器件的半导体器件的退火方法
公开(公告)号：US20100025695A1
公开(公告)日：2010-02-04
申请号：US11813621
申请日：2007-04-20
申请人： Masami Shibagaki , Akihiro Egami
发明人： Masami Shibagaki , Akihiro Egami
IPC分类号： H01L29/24 , H01L21/24
CPC分类号： H01L21/046 , H01L21/0465 , H01L21/67109 , H01L29/66068
摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.
摘要翻译：在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。

6. 发明授权

US07897523B2 Substrate heating apparatus, heating method, and semiconductor device manufacturing method 有权
标题翻译：基板加热装置，加热方法和半导体装置的制造方法
公开(公告)号：US07897523B2
公开(公告)日：2011-03-01
申请号：US12360378
申请日：2009-01-27
申请人： Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
发明人： Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
IPC分类号： H01L21/311 , F27D11/00
CPC分类号： H01L21/68742 , F27B17/0025 , H01L21/67098 , H01L21/67115
摘要： A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.
摘要翻译：具有加热基板的导电加热器的基板加热装置包括布置在导电加热器中并连接到灯丝电源以产生热电子的灯丝，以及加速灯丝和导电加热器之间的热电子的加速电源。所述灯丝具有沿着与所述基板同心的内圆周以预定间隔形成的内周部，外周部以与所述内圆同心的外圆形以预定间隔形成，并且具有比所述内圆更大的直径，通过连接每个内周部的端点和相应的一个外周部的端点而形成的区域。

7. 发明申请

US20090191724A1 Substrate Heating Apparatus, Heating Method, and Semiconductor Device Manufacturing Method 有权
标题翻译：基板加热装置，加热方法和半导体装置制造方法
公开(公告)号：US20090191724A1
公开(公告)日：2009-07-30
申请号：US12360378
申请日：2009-01-27
申请人： Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
发明人： Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
IPC分类号： H01L21/26 , F27D11/00
CPC分类号： H01L21/68742 , F27B17/0025 , H01L21/67098 , H01L21/67115
摘要： A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.
摘要翻译：具有加热基板的导电加热器的基板加热装置包括布置在导电加热器中并连接到灯丝电源以产生热电子的灯丝，以及加速灯丝和导电加热器之间的热电子的加速电源。所述灯丝具有沿着与所述基板同心的内圆周以预定间隔形成的内周部，外周部以与所述内圆同心的外圆形以预定间隔形成，并且具有比所述内圆更大的直径，通过连接每个内周部的端点和相应的一个外周部的端点而形成的区域。

8. 发明授权

US08198182B2 Annealing method for semiconductor device with silicon carbide substrate and semiconductor device 有权
标题翻译：具有碳化硅衬底和半导体器件的半导体器件的退火方法
公开(公告)号：US08198182B2
公开(公告)日：2012-06-12
申请号：US13009373
申请日：2011-01-19
申请人： Masami Shibagaki , Akihiro Egami
发明人： Masami Shibagaki , Akihiro Egami
IPC分类号： H01L21/265
CPC分类号： H01L21/046 , H01L21/0465 , H01L21/67109 , H01L29/66068
摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.
摘要翻译：在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。

9. 发明申请

US20110121317A1 ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：具有碳化硅基板和半导体器件的半导体器件的退火方法
公开(公告)号：US20110121317A1
公开(公告)日：2011-05-26
申请号：US13009373
申请日：2011-01-19
申请人： Masami Shibagaki , Akihiro Egami
发明人： Masami Shibagaki , Akihiro Egami
IPC分类号： H01L29/161 , H01L21/265
CPC分类号： H01L21/046 , H01L21/0465 , H01L21/67109 , H01L29/66068
摘要： In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.
摘要翻译：在其中注入杂质的碳化硅（SiC）衬底退火以活化杂质的气氛中，通过将H 2 O的分压设定为不大于10-2Pa，优选不大于10 -3 Pa，表面不规则性的碳化硅（SiC）衬底被控制为不大于2nm，更优选不大于1nm的RMS值。

10. 发明申请

US20120070968A1 SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING CRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE 有权
标题翻译：基板处理方法和制造晶体碳化硅（SIC）基板的方法
公开(公告)号：US20120070968A1
公开(公告)日：2012-03-22
申请号：US13234594
申请日：2011-09-16
申请人： Masami Shibagaki , Masataka Satoh , Takahiro Sugimoto , Akemi Satoh
发明人： Masami Shibagaki , Masataka Satoh , Takahiro Sugimoto , Akemi Satoh
IPC分类号： H01L21/265 , H01L21/26
CPC分类号： H01L21/0445 , H01L21/324 , H01L21/3247 , Y10S438/931
摘要： The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.
摘要翻译：本发明提供一种处理基板的方法和制造碳化硅（SiC）基板的方法，其中当对结晶碳化硅（SiC）基板进行退火处理时，抑制了表面粗糙度的发生。根据本发明实施例的基板处理方法包括对单晶碳化硅（SiC）基板（1）进行等离子体照射的步骤和对单晶碳化硅（SiC）进行高温加热处理的步骤，进行等离子体照射的基板（1）。

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