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1. 发明授权

US4917642A Air-tight ceramic container 失效
标题翻译：气密陶瓷容器
公开(公告)号：US4917642A
公开(公告)日：1990-04-17
申请号：US176752
申请日：1988-04-01
申请人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
发明人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
IPC分类号： C04B37/02 , H01H33/662
CPC分类号： H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要： A method of manufacturing an air-tight ceramic container is disclosed. This method includes the steps of coating an active metal consisting of Ti and/or Zr on an opening end face of a ceramic tubular member in an amount of 0.1 to 10 mg/cm.sup.2, thereby forming an active metal layer, placing a brazing filler metal on the active metal layer, placing a metal cover member for shielding an opening portion of the ceramic tubular member so that a peripheral portion end face of the metal cover member is in contact with the brazing filler metal, and melting the brazing filler metal by heating, thereby brazing the metal cover member to the opening end face of the ceramic tubular member.

2. 发明授权

US5056702A Method of manufacturing a semiconductor device 失效
公开(公告)号：US5056702A
公开(公告)日：1991-10-15
申请号：US419029
申请日：1989-10-10
申请人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
发明人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
IPC分类号： C04B37/02 , H01H33/662
CPC分类号： H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要： A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.

3. 发明授权

US6107582A Vacuum valve 失效
标题翻译：真空阀
公开(公告)号：US6107582A
公开(公告)日：2000-08-22
申请号：US145337
申请日：1998-09-01
申请人： Tsutomu Okutomi , Mitsutaka Homma , Tsuneyo Seki , Atsushi Yamamoto , Takashi Kusano , Hiromichi Somei
发明人： Tsutomu Okutomi , Mitsutaka Homma , Tsuneyo Seki , Atsushi Yamamoto , Takashi Kusano , Hiromichi Somei
IPC分类号： B22F3/00 , C22C1/04 , C22C5/06 , C22C9/00 , H01H1/02 , H01H1/023 , H01H1/025 , H01K1/02 , H01H33/66
CPC分类号： H01H1/0206
摘要： A vacuum valve which has a contact material having a constituent of high electrical conductivity such as Cu and an anti-arcing constituent including Cr in which particles whose particle size is in the range 0.1.about.150 .mu.m represent at least 90 volume %, and a ratio defined by the formula (.alpha..sub.900 -.alpha..sub.50).times.100/(.alpha..sub.900) for this contact material has a value of 8-12% and is the coefficient of thermal expansion of the contact material .alpha..sub.50 is the coefficient of thermal expansion of the contact material at 50.degree. C. The formation of channels generated at the interfaces of the Cr particles and the Cu matrix after undergoing the brazing step is suppressed, enabling the static withstand-voltage, contact resistance, and the breaking performance characteristics of the vacuum valve to be stabilized.
摘要翻译：一种真空阀，其具有诸如Cu的高导电性组成的接触材料和包括Cr的抗弧形成分，其中颗粒尺寸在0.1μm至150μm的范围内的颗粒表示至少90体积％，并且由该接触材料的公式（α-900-α50）×100 /（α900）定义的比例为8-12％的值，并且是接触材料的热膨胀系数α50是热膨胀系数 50℃下的接触材料。抑制了在经历钎焊步骤之后在Cr颗粒和Cu基体的界面处产生的通道的形成，使得静电耐受电压，接触电阻和真空的断裂性能特性阀门要稳定。

4. 发明授权

US06346683B1 Vacuum interrupter and vacuum switch thereof 有权
标题翻译：真空灭弧室及其真空开关
公开(公告)号：US06346683B1
公开(公告)日：2002-02-12
申请号：US09495317
申请日：2000-02-01
申请人： Tsutomu Okutomi , Takashi Kusano , Iwao Ohshima , Mitsutaka Homma , Atsushi Yamamoto , Takanobu Nishimura
发明人： Tsutomu Okutomi , Takashi Kusano , Iwao Ohshima , Mitsutaka Homma , Atsushi Yamamoto , Takanobu Nishimura
IPC分类号： H01H3366
CPC分类号： H01H1/0203
摘要： {W—CuxSb-balance Cu} alloy is employed for contacts. As the anti-arcing constituent in the alloy W or WMo in a content of 65 to 85%, of grain diameter 0.4 to 9 &mgr;m is employed. As auxiliary constituent, CuxSb is employed, the content of the CuxSb being 0.09 to 1.4 weight %, the x being x=1.9 to 5.5, the grain diameter being 0.02 to 20 &mgr;m, and the mean distance between grains being 0.2 to 300 &mgr;m. As conductive constituent, Cu or CuSb solid solution is employed, the Sb content present in solid solution form in the CuSb solid solution being less than 0.5%. As a result, not only is dispersion of CuxSb, which is evaporated on subjection to arcing, reduced, but also generation of severe cracks, which have an adverse effect in terms of occurrence of restriking. Arcing at the contacts surfaces is prevented, suppressing dispersion and exfoliation of W grains. In this way, damage due to melting and dispersion at the contacts surfaces is reduced, enabling both restriking to be prevented and the contact resistance characteristic to be improved.
摘要翻译： {W-CuxSb-余量Cu}合金用于接触。由于合金W或WMo中抗弧成分含量为65〜85％，粒径为0.4〜9μm。作为辅助成分，使用CuxSb，CuxSb的含量为0.09〜1.4重量％，x为x = 1.9〜5.5，粒径为0.02〜20μm，晶粒间的平均距离为0.2〜300μm。作为导电成分，使用Cu或CuSb固溶体，CuSb固溶体中以固溶体形式存在的Sb含量小于0.5％。结果是，不仅在电弧放电时蒸发的CuxSb的分散减少，而且产生严重的裂纹，这在再起弧的发生方面具有不利的影响。防止了在接触表面的电弧，抑制了W晶粒的分散和剥落。以这种方式，由于触点表面的熔化和分散而导致的损坏减少，从而能够防止再起弧，并且提高接触电阻特性。

5. 发明授权

US06210809B1 Contact material 有权
标题翻译：联系资料
公开(公告)号：US06210809B1
公开(公告)日：2001-04-03
申请号：US09223813
申请日：1998-12-31
申请人： Tsutomu Okutomi , Atsushi Yamamoto , Iwao Ohshima , Tsuneyo Seki , Mitsutaka Homma , Takashi Kusano
发明人： Tsutomu Okutomi , Atsushi Yamamoto , Iwao Ohshima , Tsuneyo Seki , Mitsutaka Homma , Takashi Kusano
IPC分类号： C22C2900
CPC分类号： H01H1/0203 , Y10S428/926 , Y10S428/929 , Y10T428/12014 , Y10T428/1216 , Y10T428/12167 , Y10T428/12458 , Y10T428/12903 , Y10T428/12993
摘要： The contact material of the present invention comprises: an anti-arcing constituent consisting of at least one TiC, V and VC of which the content is 30˜70 volume % and whose mean particle (grain) size is 0.1˜9 &mgr;m; C whose content is 0.005˜0.5 weight % with respect to the anti-arcing constituent, whose diameter is 0.01˜5 &mgr;m when its shape is calculated as spherical, and which is in non-solid solution condition or condition in which it does not form a chemical compound; and a conductive constituent consisting of Cu and constituting the balance.
摘要翻译：本发明的接触材料包括：由至少一种TiC，V和VC组成的抗弧形成分，其含量为30〜70体积％，其平均粒子（粒度）为0.1〜9μm; C的含量相对于防弧成分为0.005〜0.5重量％，当其形状计算为球形时，其直径为0.01〜5μm，处于非固溶状态或不形成的状态化合物和由Cu构成并构成余量的导电成分。

6. 发明授权

US6080952A Electrode arrangement of vacuum circuit breaker with magnetic member for longitudinal magnetization 失效
标题翻译：具有磁性元件的真空断路器的电极布置用于纵向磁化
公开(公告)号：US6080952A
公开(公告)日：2000-06-27
申请号：US210804
申请日：1998-12-15
申请人： Tsutomu Okutomi , Tsuneyo Seki , Iwao Ohshima , Mitsutaka Homma , Hiromichi Somei , Kumi Uchiyama , Yoshimitsu Niwa , Kenji Watanabe
发明人： Tsutomu Okutomi , Tsuneyo Seki , Iwao Ohshima , Mitsutaka Homma , Hiromichi Somei , Kumi Uchiyama , Yoshimitsu Niwa , Kenji Watanabe
IPC分类号： C22C5/06 , C22C38/00 , H01H33/18 , H01H33/66 , H01H33/664
CPC分类号： H01H33/6644 , H01H33/185
摘要： An electrode arrangement of a vacuum circuit breaker for making and breaking electrical connection. The electrode arrangement has: a pair of contact members which are adopted for making contact to and release from each other by relatively moving to and from each other along a predetermined direction; a pair of electrically conductive bars being connected to the above pair of contact members, respectively, for providing electric conduction to the contact members; and a magnetizing device with a magnetic body for generating magnetic field parallel to the predetermined direction between the contact members. The magnetic body is composed of an iron alloy comprising 0.02 to 1.5% by weight of carbon and iron. The iron alloy may further contain at least one of manganese and silicon.
摘要翻译：用于制造和断开电气连接的真空断路器的电极布置。电极装置具有：一对接触构件，其通过沿着预定方向彼此相对移动而彼此接触和释放; 一对导电棒分别连接到上述一对接触构件，用于向接触构件提供电传导; 以及具有用于在接触构件之间产生平行于预定方向的磁场的磁体的磁化装置。磁性体由含有0.02〜1.5重量％的碳和铁的铁合金构成。铁合金还可以含有锰和硅中的至少一种。

7. 发明授权

US5420384A Contact material for a vacuum interrupter 失效
标题翻译：真空断路器的接触材料
公开(公告)号：US5420384A
公开(公告)日：1995-05-30
申请号：US214016
申请日：1994-03-15
申请人： Tsutomu Okutomi , Atsushi Yamamoto , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma
发明人： Tsutomu Okutomi , Atsushi Yamamoto , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma
IPC分类号： H01H33/66 , H01H1/02 , H01H1/0233 , H01H33/00
CPC分类号： H01H1/0203 , H01H1/0233 , H01H33/664
摘要： A contact material for a vacuum interrupter includes: (a) from 25 to 70% by volume of a highly conductive component selected from the group consisting of Ag, Cu and combinations thereof, and (b) from 30 to 75% by volume of an arc-proof component comprising a carbide of an element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and combinations thereof, wherein the average grain size of the said arc-proof component is from 0.3 to 3 micrometers and the average grain distance of the arc-proof component is within the range of 0.1 to 1 micrometer. Contacts for a vacuum interrupter obtained from the contact material have improved wear resistance, large current interruption characteristic, wear resistance, and chopping characteristic, and low temperature rise characteristic.
摘要翻译：用于真空断路器的接触材料包括：（a）25至70体积％的选自Ag，Cu及其组合的高导电组分，和（b）30至75体积％的所述防弧成分包括选自Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W的元素的碳化物及其组合，其中所述防弧成分的平均粒径为 0.3〜3微米，防弧成分的平均晶粒距离在0.1〜1微米的范围内。从接触材料获得的真空断路器触点具有改善的耐磨性，大电流中断特性，耐磨性和斩波特性，以及低温特性。

8. 发明授权

US5403543A Process for manufacturing a contact material for vacuum circuit breakers 失效
标题翻译：用于制造真空断路器的接触材料的方法
公开(公告)号：US5403543A
公开(公告)日：1995-04-04
申请号：US893017
申请日：1992-06-03
申请人： Tsutomu Okutomi , Tsuneyo Seki , Atsushi Yamamoto , Mikio Okawa , Tadaaki Sekiguchi , Yoshiko Majima
发明人： Tsutomu Okutomi , Tsuneyo Seki , Atsushi Yamamoto , Mikio Okawa , Tadaaki Sekiguchi , Yoshiko Majima
IPC分类号： C22C9/00 , B22F1/00 , C22C1/04 , C22C27/06 , H01H1/02 , H01H11/04 , H01H33/66 , B22F3/00
CPC分类号： B22F1/0088 , C22C1/04 , H01H1/0206
摘要： Disclosed is a manufacturing process of an alloy material comprising a chromium component and a base component which comprises at least one element selected from tile group consisting of copper and silver, the manufacturing process comprising steps of: subjecting a chromium material with a carbon material to heat treatment; and manufacturing the alloy material using the chromium material treated at the heat treatment subjecting step and a raw material for tile base component. At the heat treatment subjecting step, the chromium material, mixed with 50 ppm to 5,000 ppm of the carbon material, is heated to a temperature within the range of 800.degree. C. to 1,400.degree. C. in a non-oxidizing atmosphere. According to this manufacturing process, the level of oxygen content in the alloy material are decreased to be not more than 200 ppm. The obtained alloy material can be used as a contact material for vacuum circuit breakers.
摘要翻译：公开了包含铬成分和碱成分的合金材料的制造方法，其包含选自由铜和银组成的瓷砖组中的至少一种元素，所述制造方法包括以下步骤：使具有碳材料的铬材料加热治疗; 并且使用在热处理步骤中处理的铬材料和用于瓦片基础成分的原料来制造合金材料。在热处理工序中，在非氧化性气氛中将与50ppm〜5,000ppm的碳材料混合的铬材料加热至800〜1400℃的温度。根据该制造方法，合金材料中的氧含量降低到不大于200ppm。所获得的合金材料可以用作真空断路器的接触材料。

9. 发明授权

US5149362A Contact forming material for a vacuum interrupter 失效
标题翻译：与真空中断器接触形成材料
公开(公告)号：US5149362A
公开(公告)日：1992-09-22
申请号：US386264
申请日：1989-07-28
申请人： Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
发明人： Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
IPC分类号： H01H33/66 , H01H1/02 , H01H1/0233
CPC分类号： H01H1/0203 , H01H1/0233 , Y10T428/12049
摘要： An Ag-Cu-WC contact forming material for a vacuum interrupter comprising a highly conductive component comprising Ag and Cu and an arc-proof component comprising WC wherein the content of the highly conductive component is such that the total amount of Ag and Cu(Ag+Cu) is from 25% to 65% by weight and the percentage of Ag based on the total amount of Ag and Cu[Ag/(Ag+Cu)] is from 40% to 80% by weight; wherein the content of the arc-proof component is from 35% to 75% by weight; wherein the structure of the highly conductive component comprises a matrix and a discontinuous phase, the discontinuous phase having a thickness or width of no more than 5 micrometers and wherein said arc-proof component comprises a discontinuous grain having a grain size of no more than 1 micrometer.

10. 发明授权

US4830821A Process of making a contact forming material for a vacuum valve 失效
标题翻译：制造用于真空阀的接触形成材料的方法
公开(公告)号：US4830821A
公开(公告)日：1989-05-16
申请号：US224401
申请日：1988-07-26
申请人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
发明人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
IPC分类号： C22C1/04 , H01H1/02
CPC分类号： C22C1/0475 , H01H1/0206
摘要： A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
摘要翻译：一种用于真空阀或真空断路器的接触形成材料，包括（a）由铜和/或银组成的导电材料，和（b）由铬，钛，锆或其合金组成的防弧材料，其中存在于所述导电材料基体中的所述防弧材料的量不大于0.35重量％。该接触形成材料通过以下步骤制造，该方法包括以下步骤：将抗电弧材料粉末压实成生坯，烧结所述生坯以获得防弧材料的骨架，用导电材料渗透所述骨架的空隙，并冷却渗透的材料。接触形成材料可以提供具有诸如温度上升特性和接触电阻特性等优异特性的真空阀或真空断路器的触头。

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