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1. 发明授权

US07173593B2 Memory circuit, display circuit, and display device 失效
标题翻译：存储电路，显示电路和显示装置
公开(公告)号：US07173593B2
公开(公告)日：2007-02-06
申请号：US10662531
申请日：2003-09-16
申请人： Masakiyo Matsumura , Takahiro Korenari
发明人： Masakiyo Matsumura , Takahiro Korenari
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3614 , G09G2300/0809 , G09G2300/0842
摘要： A liquid crystal display includes pixels arrayed in a matrix of rows and columns, scanning lines extending along the rows of the pixels, signal lines extending along the columns of the pixels, and pixel driving sections which are disposed near intersections of the scanning lines and signal lines, and each of which is controlled via one scanning line to capture a data signal on one signal line and output the data signal to one pixel. Particularly, each pixel driving section includes a memory circuit having a transistor whose gate is connected to the one signal line, and first and second storage capacitances which are charged to positive and negative power supply voltages and connected to a source and drain of the transistor to store the data signal as analog drive voltages of positive and negative polarities, respectively.
摘要翻译：液晶显示器包括排列成行和列的矩阵的像素，沿着像素行延伸的扫描线，沿着像素的列延伸的信号线，以及设置在扫描线和信号的交叉点附近的像素驱动部分线，并且其中的每一个通过一条扫描线控制以在一个信号线上捕获数据信号，并将数据信号输出到一个像素。特别地，每个像素驱动部分包括具有栅极连接到一个信号线的晶体管的存储电路，以及被充电到正和负电源电压并连接到晶体管的源极和漏极的第一和第二存储电容，将数据信号分别作为正极性和负极性的模拟驱动电压存储。

2. 发明授权

US08435346B2 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus 有权
公开(公告)号：US08435346B2
公开(公告)日：2013-05-07
申请号：US12366324
申请日：2009-02-05
申请人： Masakiyo Matsumura , Yukio Taniguchi
发明人： Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.

3. 发明授权

US08168979B2 Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管，显示器和半导体器件
公开(公告)号：US08168979B2
公开(公告)日：2012-05-01
申请号：US12467852
申请日：2009-05-18
申请人： Tomoya Kato , Masakiyo Matsumura
发明人： Tomoya Kato , Masakiyo Matsumura
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/02675 , H01L21/02609 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
摘要翻译：根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100）形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

4. 发明授权

US07803520B2 Crystallization apparatus, crystallization method, device and phase modulation element 失效
标题翻译：结晶装置，结晶方法，装置和相位调制元件
公开(公告)号：US07803520B2
公开(公告)日：2010-09-28
申请号：US11681030
申请日：2007-03-01
申请人： Yukio Taniguchi , Masakiyo Matsumura , Noritaka Akita
发明人： Yukio Taniguchi , Masakiyo Matsumura , Noritaka Akita
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0268 , B23K26/073 , C30B13/24 , G02B27/0927 , G02B27/0961 , H01L21/02595 , H01L21/2026 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.
摘要翻译：本发明包括光调制光学系统，其具有形成对入射光束的期望光强度梯度分布的第一元件和形成具有相反峰值形状的期望光强度最小分布的第二元件，以及图像形成光学系统，其设置在光调制光学系统和具有多晶半导体膜或非晶半导体膜的基板之间，其中形成有光强度梯度分布和光强度最小分布的入射光束被施加到多晶半导体膜或通过图像形成光学系统的非晶半导体膜，从而使非晶半导体膜结晶。第一元件的图案与第二元件的图案相反。

5. 发明申请

US20090181483A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 审中-公开
公开(公告)号：US20090181483A1
公开(公告)日：2009-07-16
申请号：US12403776
申请日：2009-03-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： H01L21/336 , H01L21/26 , H01L21/78
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

6. 发明授权

US07540921B2 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus 失效
标题翻译：结晶装置，结晶方法，相位调制元件，装置和显示装置
公开(公告)号：US07540921B2
公开(公告)日：2009-06-02
申请号：US10790828
申请日：2004-03-03
申请人： Masakiyo Matsumura , Yukio Taniguchi
发明人： Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.
摘要翻译：根据本发明的相位调制元件具有基于具有预定尺寸的相位调制单元具有第一相位值的第一区域和具有基于具有预定尺寸的相位调制单元的具有第二相位值的第二区域，并且每个相位分布由第一区域和第二区域的面积份额的变化取决于每个位置来定义。

7. 发明授权

US07518252B2 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device 失效
标题翻译：薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
公开(公告)号：US07518252B2
公开(公告)日：2009-04-14
申请号：US11509605
申请日：2006-08-25
申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L23/28 , H01L29/04
CPC分类号： H01L21/0268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.
摘要翻译：薄膜半导体衬底包括绝缘衬底，形成在绝缘衬底上的非晶半导体薄膜和位于半导体薄膜上并指示用于结晶的参考位置的多个对准标记。

8. 发明申请

US20090004763A1 LASER CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS 审中-公开
标题翻译：激光结晶方法和结晶装置
公开(公告)号：US20090004763A1
公开(公告)日：2009-01-01
申请号：US12145826
申请日：2008-06-25
申请人： Takashi Ono , Masakiyo Matsumura , Kazurumi Azuma , Tomoya Kato
发明人： Takashi Ono , Masakiyo Matsumura , Kazurumi Azuma , Tomoya Kato
IPC分类号： H01L21/00 , B05C11/00
CPC分类号： G01B11/06 , B23K26/048 , H01L21/02678 , H01L21/02686
摘要： The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height.
摘要翻译：本发明公开了一种使用高精度基板高度控制机构的激光结晶方法和结晶装置。提供了一种激光结晶方法，包括获得具有由移相器形成的反峰值图案光强度分布的第一脉冲激光束，并用第一脉冲激光束照射设置在基板上的薄膜，由此熔化和结晶该薄膜的方法包括：当利用第二激光束照射第二激光束时，使用设置在第二激光束的光路上的偏振元件来选择第二激光束的所需一个反射光分量通过检测所选择的反射光分量将衬底的高度校正到预定高度，并将第一脉冲激光束照射到具有校正高度的薄膜上。

9. 发明申请

US20070211327A1 LIGHT APPLICATION APPARATUS, CRYSTALLIZATION APPARATUS AND OPTICAL MODULATION ELEMENT ASSEMBLY 失效
标题翻译：光应用装置，结晶装置和光学调制元件装配
公开(公告)号：US20070211327A1
公开(公告)日：2007-09-13
申请号：US11749488
申请日：2007-05-16
申请人： Yukio Taniguchi , Masakiyo Matsumura
发明人： Yukio Taniguchi , Masakiyo Matsumura
IPC分类号： G02F1/01
CPC分类号： G03B27/72
摘要： A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane. The first to fourth light intensity distributions are different from each other on the predetermined plane.
摘要翻译：一种光应用装置，包括具有多个相位步进的光调制元件，入射到光调制元件中的光束被相位步进相位调制并从光调制元件出射，作为具有第一光强分布。光学系统布置在光调制元件和预定平面之间。光学系统将相位调制光束分成具有第二和第三光强分布和不同光学特性的至少两个光束，并且投影包括分割的两个光束的光束，投影的光强度分布光束彼此组合，使得投影光束在预定平面上具有反向峰值形状的第四光强分布并进入预定平面。第一至第四光强分布在预定平面上彼此不同。

10. 发明申请

US20070063228A1 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US20070063228A1
公开(公告)日：2007-03-22
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L27/148 , H01L29/768 , H01L29/74
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

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