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    • 2. 发明授权
    • Group III nitride compound semiconductor light-emitting device
    • III族氮化物化合物半导体发光器件
    • US07737431B2
    • 2010-06-15
    • US11572306
    • 2006-07-14
    • Masaki Ohya
    • Masaki Ohya
    • H01L31/00
    • B82Y20/00H01S5/221H01S5/2231H01S5/3213H01S5/3216H01S5/34333H01S2304/04
    • A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1
    • 根据本发明的III族氮化物化合物半导体发光器件包括:由III族氮化物化合物半导体构成的有源层(105); 电流阻挡层(108),其形成在有源层(105)上并具有条纹孔(108a); 埋入孔(108a)的超晶格层(p型层109),由包含Al的III族氮化物化合物半导体构成; 以及形成在超晶格层上并由包括Al的III族氮化物化合物半导体构成的包层(110)。 当超晶格层的平均Al组成比表示为x1,将包覆层(110)的平均Al组成比表示为x2时,将其表示为x1
    • 4. 发明申请
    • Group III Nitride Compound Semiconductor Light-Emitting Device
    • III族氮化物复合半导体发光器件
    • US20080303017A1
    • 2008-12-11
    • US11572306
    • 2006-07-14
    • Masaki Ohya
    • Masaki Ohya
    • H01L33/00
    • B82Y20/00H01S5/221H01S5/2231H01S5/3213H01S5/3216H01S5/34333H01S2304/04
    • A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1
    • 根据本发明的III族氮化物化合物半导体发光器件包括:由III族氮化物化合物半导体构成的有源层(105); 电流阻挡层(108),其形成在有源层(105)上并具有条纹孔(108a); 埋入孔(108a)的超晶格层(p型层109),由包含Al的III族氮化物化合物半导体构成; 以及形成在超晶格层上并由包括Al的III族氮化物化合物半导体构成的包层(110)。 当超晶格层的平均Al组成比表示为x1,将包覆层(110)的平均Al组成比表示为x2时,将其表示为x1
    • 7. 发明授权
    • Vinyl chloride resin composition containing polymeric processing aid
    • 含有聚合物加工助剂的氯乙烯树脂组合物
    • US4206292A
    • 1980-06-03
    • US18321
    • 1979-03-07
    • Masaki OhyaYo IizukaSusumu Midorikawa
    • Masaki OhyaYo IizukaSusumu Midorikawa
    • C08L27/06C08L33/10C08L33/12C08L33/08
    • C08L27/06C08L33/10
    • A vinyl chloride resin composition having surface smoothness comprises:(1) 100 parts of vinyl chloride polymer; and(2) 0.1 to 30 parts of a polymer processing aid comprising:(A) 10 to 100 parts of a copolymer comprising 20 to 99% of an alkyl methacrylate, 1 to 70% of a dialkyl itaconate, and 0 to 60% of a monomer copolymerizable therewith; and(B) 0 to 90 parts of a copolymer comprising 80 to 100% of an alkyl methacrylate, and 0 to 20% of a monomer copolymerizable therewith,the sum of the quantities of the copolymers (A) and (B) producing 100 parts of the polymer processing aid, all quantities expressed in parts and percentages being by weight.This vinyl chloride resin composition comprising a novel polymer processing aid not only shows an increased gelation rate, yields less ungelled particles and possesses excellent processability such as an increased elongation at a high temperature, but particularly affords a formed product of notably improved surface smoothness.
    • 具有表面光滑度的氯乙烯树脂组合物包括:(1)100份氯乙烯聚合物; 和(2)0.1〜30份聚合物加工助剂,其包含:(A)10至100份包含20至99%的甲基丙烯酸烷基酯,1至70%的衣康酸二烷基酯和0至60%的 可与其共聚的单体; 和(B)0至90份包含80至100%的甲基丙烯酸烷基酯和0至20%的可与其共聚的单体的共聚物,共聚物(A)和(B)的量的总和产生100份 的聚合物加工助剂,以重量百分数表示的所有数量。 包含新型聚合物加工助剂的氯乙烯树脂组合物不仅显示出增加的凝胶化速率,产生较少的未凝胶化颗粒,并且具有优异的可加工性,例如在高温下增加的伸长率,而且特别提供了显着提高的表面平滑度的成形产品。