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    • 6. 发明授权
    • Solid state image pick-up apparatus
    • 固态摄像装置
    • US4456929A
    • 1984-06-26
    • US385005
    • 1982-06-04
    • Masakazu AokiHaruhisa AndoShinya OhbaIwao Takemoto
    • Masakazu AokiHaruhisa AndoShinya OhbaIwao Takemoto
    • H01L27/146H04N5/335H04N5/359H04N5/365H04N5/374H04N3/15
    • H04N3/1568
    • In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second semiconductor layer including a horizontal shift register for selecting the horizontal switching elements, a third semiconductor layer including a vertical shift register for selecting the vertical switching elements, the first, second and third semiconductor layers are insulated from each other, and gate voltage V.sub.SMOS.L impressed upon a gate electrode of a not selected horizontal switching element is made to satisfy a relation V.sub.SMOS.L .gtoreq.V.sub.WPD +F.sub.FB where V.sub.WPD represents a potential of the first semiconductor layer, and V.sub.FB a flat band voltage beneath gate electrodes of the horizontal switching elements.
    • 在包括包括光电转换元件阵列的第一半导体层和适于选择光电转换元件的垂直和水平开关元件的类型的固态图像拾取装置中,包括水平移位寄存器的第二半导体层, 水平开关元件,包括用于选择垂直开关元件的垂直移位寄存器的第三半导体层,第一,第二和第三半导体层彼此绝缘,并且栅极电压VSMOS.L施加在未选择的水平的栅电极 使开关元件满足VSMOS.L> / = VWPD + FFB的关系,其中VWPD表示第一半导体层的电位,VFB是水平开关元件的栅电极下方的平带电压。
    • 7. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US4413283A
    • 1983-11-01
    • US332933
    • 1981-12-21
    • Masakazu AokiHaruhisa AndoShinya OhbaIwao Takemoto
    • Masakazu AokiHaruhisa AndoShinya OhbaIwao Takemoto
    • H04N9/07H04N9/04H04N3/14
    • H04N9/045H04N3/1512
    • A solid-state imaging device comprises a plurality of photodiodes arranged in a matrix form in the same semiconductor substrate, horizontal and vertical switching elements for selecting the photodiodes, horizontal and vertical shift registers for supplying scan pulses to the horizontal and vertical switching elements, and an interlace circuit for simultaneously selecting two vertical gate lines to simultaneously read two picture element rows. A buffer circuit is inserted between the interlace circuit and the vertical gate lines for changing a potential level of one of the two selected vertical gate lines from a high level to a low level prior to changing the potential level of the other vertical gate line.
    • 固态成像装置包括在同一半导体衬底中以矩阵形式布置的多个光电二极管,用于选择光电二极管的水平和垂直开关元件,用于向水平和垂直开关元件提供扫描脉冲的水平和垂直移位寄存器,以及 用于同时选择两条垂直栅极线以同时读取两个像素行的隔行电路。 在隔行电路和垂直栅极线之间插入缓冲电路,用于在改变另一垂直栅极线的电位电平之前将两个所选择的垂直栅极线之一的电位电平从高电平改变为低电平。
    • 9. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US4316205A
    • 1982-02-16
    • US119383
    • 1980-02-07
    • Masakazu AokiIwao TakemotoMasaharu KuboRyuichi Izawa
    • Masakazu AokiIwao TakemotoMasaharu KuboRyuichi Izawa
    • H01L27/146H01L31/113H04N5/335H04N5/374H01L27/14
    • H01L31/1136H01L27/14643
    • In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.
    • 在具有单片半导体主体的一个主表面区域的固态成像装置中,以二维排列的光电二极管,构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管,构成垂直和水平扫描电路的MOS晶体管 为了使开关MOS晶体管“开”和“关”,构成其它外围电路的MOS晶体管,该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置,其特征在于,在各种MOS晶体管的源极和漏极区域中,垂直开关MOS晶体管的源极区域的表面杂质浓度较低,并且结深度比其他源极和漏极区域更深。