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    • 5. 发明申请
    • Cutting method of fabric material
    • 织物材料切割方法
    • US20050120842A1
    • 2005-06-09
    • US11000985
    • 2004-12-02
    • Hidetoshi KawasakiKen Shimizu
    • Hidetoshi KawasakiKen Shimizu
    • G03C3/00B26D7/08B26D7/10C09J191/06C09J201/00
    • B26D7/086B26D7/10Y10T83/041Y10T83/0414Y10T83/283
    • A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20° C. to 50° C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)° C. and (Tm2−5)° C., and then cut by a ultrasonic wave cutter 23. Thus the fabric material can be cut without generating the chaff s of the adhesive agent and the fiber off scums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.
    • 织物材料具有基底织物,基底织物的表面上的绒毛层,以及在基底织物的另一表面上的热熔粘合剂的粘合剂层。 粘合剂层含有熔点Tm1比基体聚合物的熔点Tm 2低20℃〜50℃的蜡。 将织物材料通过加热装置加热到至少(Tm 1 + 5)℃和(Tm 2 -5)℃,然后用超声波波切割机23切割。 因此,可以切割织物材料,而不会产生粘合剂的谷壳和脱屑的纤维。 结果,在切割过程中不会产生污染,并且连续稳定地切割织物材料。 没有谷壳的粘附,通过切割形成的具有良好表面的颤音。
    • 7. 发明授权
    • Cutting method of fabric material
    • 织物材料切割方法
    • US07536937B2
    • 2009-05-26
    • US11000985
    • 2004-12-02
    • Hidetoshi KawasakiKen Shimizu
    • Hidetoshi KawasakiKen Shimizu
    • B26D7/10
    • B26D7/086B26D7/10Y10T83/041Y10T83/0414Y10T83/283
    • A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20° C. to 50° C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)° C. and (Tm2−5)° C., and then cut by a ultrasonic wave cutter 23. Thus the fabric material can be cut without generating the chaffs of the adhesive agent and the fiber offscums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.
    • 织物材料具有基底织物,基底织物的表面上的绒毛层,以及在基底织物的另一表面上的热熔粘合剂的粘合剂层。 粘合层含有熔点Tm1比基体聚合物的熔点Tm2低20℃〜50℃的蜡。 将织物材料通过加热装置加热至至少(Tm1 + 5)℃和(Tm2-5)℃,然后用超声波切割器23切割。因此,可以切割织物材料而不产生 粘合剂和纤维片的谷壳。 结果,在切割过程中不会产生污染,并且连续稳定地切割织物材料。 没有谷壳的粘附,通过切割形成的具有良好表面的颤音。
    • 8. 发明申请
    • Cartridge for Photosensitive Recording Medium
    • 墨盒用于感光记录介质
    • US20080028421A1
    • 2008-01-31
    • US11721840
    • 2005-12-22
    • Hidetoshi KawasakiTetsuya Takatori
    • Hidetoshi KawasakiTetsuya Takatori
    • G11B23/03G03H1/04
    • G11B23/0316G11B23/0308
    • A cartridge (2) is composed of a lower shell (30), an upper shell (31), a shutter 10 and a lock mechanism (11). A hologram recording disk (4) is rotatably contained in a disk recess (3) of a cartridge body (25) formed by joining the lower shell (30) and the upper shell (31). Inner surfaces of the lower shell (30) and the upper shell (31) are provided with a first concave portion (34), a second concave portion (35), a first convex portion (42) and a second convex portion (43). When the lower shell (30) and the upper shell (31) are joined, the concave portions and the convex portions engage to form a labyrinth-like light-shielding structure. In virtue of this, light and dust are prevented from entering through a gap residing between the lower shell (30) and the upper shell (31).
    • 盒(2)由下壳(30),上壳(31),闸板10和锁机构(11)构成。 全息记录盘(4)可旋转地容纳在通过连接下壳体(30)和上壳体(31)形成的盒体(25)的盘凹槽(3)中。 下壳体(30)和上壳体(31)的内表面设置有第一凹部(34),第二凹部(35),第一凸部(42)和第二凸部(43) 。 当下壳体(30)和上壳体(31)接合时,凹部和凸部接合形成迷宫状遮光结构。 由此,防止了光和灰尘通过位于下壳体(30)和上壳体(31)之间的间隙进入。
    • 9. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06365925B2
    • 2002-04-02
    • US09151584
    • 1998-09-11
    • Ichiro HaseMitsuhiro NakamuraHidetoshi KawasakiShinichi Wada
    • Ichiro HaseMitsuhiro NakamuraHidetoshi KawasakiShinichi Wada
    • H01L31072
    • H01L29/7785
    • A semiconductor device that is easily operated with a single positive voltage supply and exhibits an excellent linearity of mutual conductance and source-gate capacitance with regard to a gate voltage is provided. The semiconductor device comprises a second barrier layer of AlGaAs, a channel layer of InGaAs and a first barrier layer of AlGaAs that are stacked in this order on a substrate of GaAs with a buffer layer of u-GaAs between the substrate and the second barrier layer. Carrier supply regions doped with n-type impurity are formed in part of the first and second barrier layers. A low resistivity region including a high concentration of p-type impurity (Zn) is formed in the first barrier layer. The low resistivity region is buried in a high resistivity region and brought to contact with a gate electrode. Upon an application of positive voltage to the gate electrode, a carrier deficient region disappears in the channel layer and no parasitic resistance component remains.
    • 提供了一种使用单个正电压电源容易操作且相对于栅极电压具有优异的互导线性和源极 - 栅极电容的半导体器件。 半导体器件包括AlGaAs的第二阻挡层,InGaAs的沟道层和AlGaAs的第一势垒层,其依次层叠在具有衬底和第二势垒层之间的具有u-GaAs缓冲层的GaAs衬底上 。 在第一和第二阻挡层的一部分中形成掺杂有n型杂质的载流子供应区。 在第一阻挡层中形成包含高浓度p型杂质(Zn)的低电阻率区域。 低电阻率区域被埋在高电阻率区域中并与栅电极接触。 当向栅极施加正电压时,载流子缺陷区域在沟道层中消失,并且不存在寄生电阻分量。