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1. 发明授权

US5371285A Method of producing keto acids 失效
标题翻译：生产酮酸的方法
公开(公告)号：US5371285A
公开(公告)日：1994-12-06
申请号：US38283
申请日：1993-03-29
申请人： Masahiro Kondo , Michio Tanaka , Naoya Sakamoto , Hajime Ooyoshi
发明人： Masahiro Kondo , Michio Tanaka , Naoya Sakamoto , Hajime Ooyoshi
IPC分类号： C07C227/02 , C07C229/00
CPC分类号： C07C227/02
摘要： In a method of producing a keto acid having the general formula ##STR1## wherein R.sup.1 and R.sup.2 independently represent an alkyl of 1-6 carbons or a cycloalkyl of 4-8 carbons, by reacting an m-aminophenol having the general formula ##STR2## wherein R.sup.1 and R.sup.2 are the same as above, with phthalic anhydride, in an organic solvent, the improvement comprising effecting the reaction in an amount of the organic solvent which is insufficient to dissolve the keto acid produced in the reaction, so that at least a portion of the resultant keto acid crystallizes out of the solvent and allowing the reaction to proceed in a heterogeneous system.
摘要翻译：在制备具有通式“IMAGE”的酮酸的方法中，其中R1和R2独立地表示1-6个碳原子的烷基或4-8个碳的环烷基，通过使通式为“IMAGE”的间氨基苯酚，其中R1和R2与上述相同，在邻苯二甲酸酐中，在有机溶剂中，其改进包括使一定量的有机溶剂的反应不足以溶解在反应中产生的酮酸，使得至少一种所得酮酸的一部分从溶剂中结晶并使反应在异相体系中进行。

2. 发明授权

US4891465A Process for producting alkyl group-substituted aromatic hydrocarbons 失效
标题翻译：制备烷基取代芳烃的方法
公开(公告)号：US4891465A
公开(公告)日：1990-01-02
申请号：US221246
申请日：1988-07-06
申请人： Katsuo Taniguchi , Michio Tanaka , Kazunori Takahata , Naoya Sakamoto , Toshihiro Takai , Yoshito Kurano , Masayasu Ishibashi
发明人： Katsuo Taniguchi , Michio Tanaka , Kazunori Takahata , Naoya Sakamoto , Toshihiro Takai , Yoshito Kurano , Masayasu Ishibashi
IPC分类号： B01J29/18 , B01J29/00 , C07B61/00 , C07C1/00 , C07C2/66 , C07C2/86 , C07C15/00 , C07C15/02 , C07C15/14 , C07C15/16 , C07C15/24 , C07C37/08 , C07C39/15 , C07C43/263 , C07C67/00 , C07C67/08
CPC分类号： C07C39/15 , C07C2/66 , C07C2/861 , C07C2/864 , C07C2529/18
摘要： In a process for producing an alkyl group-substituted aromatic hydrocarbon according to the present invention, (i) an aromatic hydrocarbon is reacted with (ii) an alkylating agent selected from the group consisting of olefins, lower aliphatic alcohols and alkyl halides in the presence of a mordenite-type zeolite catalyst treated with a fluorine-containing compound, and therefore the conversion of the aromatic compound can be increased and further it is possible to introduce the specific number of alkyl groups into the specific position of the aromatic compound.In particular, when biphenyl is used as the aromatic hydrocarbon and propylene is used as the alkylating agent, p,p'-diisopropylbiphenyl can be obtained in a high yield and high selectivity.

3. 发明授权

US5113018A Method of producing N-alkylaminophenols 失效
标题翻译：生产N-烷基氨基酚的方法
公开(公告)号：US5113018A
公开(公告)日：1992-05-12
申请号：US538719
申请日：1990-06-15
申请人： Yoshito Kurano , Masato Kawamura , Masahiro Kondo , Michio Tanaka , Sanehiro Yamamoto
发明人： Yoshito Kurano , Masato Kawamura , Masahiro Kondo , Michio Tanaka , Sanehiro Yamamoto
IPC分类号： C07C213/02
CPC分类号： C07C213/02
摘要： N-alkyl amino phenols, such as N-ethyl-m-amino phenol are produced in high yield and with high purity by reacting a divalent phenol, such as resorcinol, with an alkylamine, such as ethylamine, in the absence of catalyst and solvent, at a temperature of 120.degree.-210.degree. C. under elevated pressure in an inert gas atmosphere. In a first embodiment, the resulting reaction mixture is acidified to convert the N-alkylaminophenol to its water soluble salt and the resulting aqueous layer is separated from the oily layer. The aqueous layer is rendered alkaline to liberate N-alkylaminophenol as an oily layer. The N-alkyl-aminophenol oily layer is then separated from the aqueous layer and distilled. In an alternative embodiment, the reaction mixture resulting from the reaction between the divalent phenol and alkylamine is combined with an aqueous solution of an alkali to convert unreacted phenol to its water soluble salt while the product N-alkylaminophenol remains in an oily phase which is separated from the aqueous phase. An organic solvent is used as an extractant. The recovered N-alkylaminophenol organic solution is then distilled to recover N-alkylaminophenol. Purities of the recovered N-alkylaminophenol in excess of 95% can be achieved.

4. 发明授权

US07648292B2 Resist pattern forming method 有权
公开(公告)号：US07648292B2
公开(公告)日：2010-01-19
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

5. 发明申请

US20090162759A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090162759A1
公开(公告)日：2009-06-25
申请号：US12065782
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要翻译：图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。存储装置502存储从第一检查结果和第二检查结果获得的相关公式。控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

6. 发明授权

US07488127B2 Resist pattern forming apparatus and method thereof 有权
公开(公告)号：US07488127B2
公开(公告)日：2009-02-10
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B13/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

7. 发明授权

US07375831B2 Line width measuring method, substrate processing method, substrate processing apparatus and substrate cooling processing unit 有权
标题翻译：线宽测量方法，基板处理方法，基板处理装置和基板冷却处理单元
公开(公告)号：US07375831B2
公开(公告)日：2008-05-20
申请号：US11013784
申请日：2004-12-17
申请人： Michio Tanaka , Masami Yamashita
发明人： Michio Tanaka , Masami Yamashita
IPC分类号： G01B11/02
CPC分类号： G03F7/705 , G03F7/70625
摘要： In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.
摘要翻译：在使用散射测量技术进行的光线宽度测量中，本发明比现有技术更准确地测量在衬底上形成的线宽。在基板上的抗蚀剂膜中形成预定图案之后，测量抗蚀剂膜的折射率和消光系数。基于测量值，执行计算以获得从多个虚拟图案反射的反射光的计算的光强度分布。存储计算的光强度分布，并创建它们的库。用光照射测定折射率等的基板，测定其反射光的光强度分布。将光强度分布与库中计算的光强度分布进行比较，使得具有匹配的光强度分布的虚拟图案的线宽被视为实曲线的线宽。由于在形成图案之后，基于实际测量的折射率等创建虚拟图案的光强度分布的库，因此测量与测量线宽度时的图案状态匹配的精确线宽。

8. 发明申请

US20060199090A1 Method of setting focus condition at time of exposure, apparatus for setting focus condition at time of exposure, program, and computer readable recording medium 失效
标题翻译：在曝光时设定对焦条件的方法，曝光时设定对焦条件的设备，程序和计算机可读记录介质
公开(公告)号：US20060199090A1
公开(公告)日：2006-09-07
申请号：US11362126
申请日：2006-02-27
申请人： Michio Tanaka , Masahide Tadokoro
发明人： Michio Tanaka , Masahide Tadokoro
IPC分类号： G03B27/00 , G03C5/00
CPC分类号： G03F7/70641 , Y10S430/136
摘要： In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.
摘要翻译：在本发明中，在已经设定了一定的聚焦条件的光刻工艺中，基板上的膜仅暴露于透过的光源的零级光，然后显影以减小膜的第一部分在基板上。此外，将基板上的膜暴露于光源的零级光和较高阶光，然后显影以减少基板上的膜的第二部分。此后，测量第一部分和第二部分的膜厚度，并且通过预先获得的膜厚度和线宽度之间的相关性，将测量的第一部分和第二部分的膜厚度转换为抗蚀剂图案的线宽度。然后从第一部分的转换线宽中减去第二部分的转换线宽，由此计算仅依赖于聚焦分量的线宽。根据线宽，设置新的对焦条件。

9. 发明申请

US20050271382A1 Resist pattern forming apparatus and method thereof 有权
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US20050271382A1
公开(公告)日：2005-12-08
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F7/16 , B05C11/00 , B05C11/08 , B05D1/40 , B05D3/00 , G03F7/20 , G03F7/30 , H01L21/00 , H01L21/027 , G03C5/00
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.
摘要翻译：一种抗蚀剂图形形成装置，包括具有控制部分的控制器，所述控制部分控制具有涂覆单元和显影单元的涂布和显影装置的处理，并且与其连接的对准器，同时检查部分等至少测量选自多个测量项目中的一个，基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，底膜与抗蚀剂图案匹配的精度，显影后的缺陷，等等。测量的数据被传送到控制器。控制器根据抗蚀剂的膜厚度和开发后的线宽度等测量项目的对应数据选择修改参数，修改后的参数修改为执行。因此，通过减少操作者的工作量来促进修改操作，并且同时可以执行适当的修改。

10. 发明申请

US20050038618A1 Substrate inspecting device, coating/developing device and substrate inspecting method 有权
公开(公告)号：US20050038618A1
公开(公告)日：2005-02-17
申请号：US10494524
申请日：2002-11-13
申请人： Michio Tanaka , Makoto Kiyota , Takashi Aiuchi , Ryouichi Uemura
发明人： Michio Tanaka , Makoto Kiyota , Takashi Aiuchi , Ryouichi Uemura
IPC分类号： G01N21/86 , G01N21/956 , G03F7/20 , H01L21/027 , H01L21/66 , H01L23/544 , G06F19/00
CPC分类号： G03F7/70491 , G01N21/95607 , G03F7/70625 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： When a base film of a substrate is formed, for instance, on a scribe line of a wafer, a quadrangular first inspection pattern is formed in advance, and when a resist pattern is formed, a second inspection pattern are formed so as to be on a straight line to the first inspection pattern in a top plan view. When light is irradiated to a region including the first inspection pattern and the second inspection pattern and a spectrum is formed based on the reflected diffracted light, information of a line width of the second inspection pattern and a pitch of both inspection patterns is contained therein. In this connection, by preparing in advance a group of spectra based on various kinds of inspection patterns according to simulation and by comparing with an actual spectrum, the most approximate spectrum is selected, and thereby the line width and the pitch are estimated to evaluate the resist pattern.

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