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1. 发明授权

US6131050A Control device having a control logic switching function 失效
标题翻译：具有控制逻辑切换功能的控制装置
公开(公告)号：US6131050A
公开(公告)日：2000-10-10
申请号：US872707
申请日：1997-06-11
申请人： Masahiro Egami , Yuh Shiohara , Tetsuya Minegishi , Yasuyuki Hisashi , Takashi Sato , Hiromitsu Morimoto
发明人： Masahiro Egami , Yuh Shiohara , Tetsuya Minegishi , Yasuyuki Hisashi , Takashi Sato , Hiromitsu Morimoto
IPC分类号： G05B7/02 , G05B19/042 , G05B19/05 , A63G31/08
CPC分类号： G05B19/042 , G05B2219/23087
摘要： A control device having control logics that respectively generate operated quantities by simutaneously parallel-processing observed quantities obtained from a controlled object. A switch selectively outputs one of the operated quantities to the controlled object based on instruction data.
摘要翻译：具有控制逻辑的控制装置，分别通过从受控对象获得的观察量并行处理分别产生操作量。开关基于指令数据有选择地将一个操作量输出到受控对象。

2. 发明授权

US5851956A Method of manufacturing oxide crystal 失效
标题翻译：氧化物晶体的制造方法
公开(公告)号：US5851956A
公开(公告)日：1998-12-22
申请号：US726917
申请日：1996-10-07
申请人： Yasuo Namikawa , Xin Yao , Masahiro Egami , Yuh Shiohara
发明人： Yasuo Namikawa , Xin Yao , Masahiro Egami , Yuh Shiohara
IPC分类号： C01G1/00 , C01G3/00 , C30B15/00 , C30B29/22 , C30B15/02
CPC分类号： C30B29/225 , C30B15/00 , Y10S505/729
摘要： A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.
摘要翻译：通过增加晶体生长的速度而不影响晶体生长，制造高质量的大的氧化物晶体。将放置在坩埚中的作为原料的BaO-CuO的熔体在Y2BaCuO5的固相沉淀物的存在下加热熔融并保持在规定的温度。此后，晶种在旋转的同时被拉起，晶种与熔体的表面接触，由此得到具有YBa2Cu3O7-x结构的氧化物晶体，该生长氧化物晶体的气氛具有氧气分压比环境气氛高。

3. 发明授权

US06613463B1 Superconducting laminated oxide substrate and superconducting integrated circuit 失效
标题翻译：超导叠层氧化物基板和超导集成电路
公开(公告)号：US06613463B1
公开(公告)日：2003-09-02
申请号：US09653404
申请日：2000-09-01
申请人： Teruo Izumi , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka , Masahiro Egami , Youichi Enomoto , Hideo Suzuki , Michitomo Iiyama
发明人： Teruo Izumi , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka , Masahiro Egami , Youichi Enomoto , Hideo Suzuki , Michitomo Iiyama
IPC分类号： B32B1900
CPC分类号： H01L39/2419 , Y10S428/93
摘要： A superconducting laminated oxide substrate, which comprises a laminate a layer of a superconducting oxide crystal substrate made of a superconducting oxide single crystal or a superconducting oxide polycrystal and a layer of a reinforcing crystal substrate, prevents cracks from occurring in the superconducting oxide crystal substrate due to the heat treatment conducted for the purpose of forming an insulation film or a conductor film, and provides easy connectivity between electrodes and wiring formed on substrates located at upper and lower positions.
摘要翻译：超导层叠氧化物基板包括由超导氧化物单晶或超导氧化物多晶体构成的超导氧化物晶体基板层和层叠增强晶体基板的层叠体，防止在超导氧化物晶体基板中产生裂纹进行为了形成绝缘膜或导体膜而进行的热处理，并且提供电极与位于上部和下部位置的基板上形成的布线之间的易连接性。

4. 发明授权

US5846323A Crystal manufacturing apparatus 失效
标题翻译：水晶制造装置
公开(公告)号：US5846323A
公开(公告)日：1998-12-08
申请号：US725939
申请日：1996-10-08
申请人： Masahiro Egami , Yuh Shiohara , Yasuo Namikawa
发明人： Masahiro Egami , Yuh Shiohara , Yasuo Namikawa
IPC分类号： C30B15/00 , C30B15/26 , C30B29/22 , C30B35/00
CPC分类号： C30B29/22 , C30B15/26 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A crystal pulling apparatus is designed to generate a thermal gradient across the melt surface to prevent nucleation of stray crystals and production of floating debris to produce a high quality crystal, and has special provisions for observing the growth behavior and crystal dimension measurements. The apparatus includes a cylindrical chamber, a crucible disposed centrally within the chamber, a cylindrical heater surrounding the crucible, an insulation member disposed on the top section of the crucible, a first transparent plate and a second transparent plate for closing the center hole in the insulation member, a pull rod passing through the center hole of the transparent plates, a crystal illumination mechanism, a crystal size determination mechanism and an ambient atmosphere flowing mechanism. The crystal size determination mechanism is provided with a quartz prism, an infrared transmitting filter on a side wall of the chamber, a revolution count circuit, phase angle setting circuit, a CCD camera, an image processing section, and a crystal size determination device having a TV monitor.
摘要翻译：设计了一种晶体拉制装置，以在熔体表面上产生热梯度，以防止杂散晶体的成核和浮选碎屑的产生，产生高质量的晶体，并且具有观察生长行为和晶体尺寸测量的特殊规定。该装置包括圆柱形腔室，设置在腔室中心的坩埚，围绕坩埚的圆柱形加热器，设置在坩埚顶部的绝缘构件，第一透明板和第二透明板，用于封闭坩埚中的中心孔绝缘构件，穿过透明板的中心孔的拉杆，晶体照明机构，晶体尺寸确定机构和环境大气流动机构。晶体尺寸确定机构设置有石英棱镜，在室的侧壁上的红外透射滤光器，转数计算电路，相位角设置电路，CCD照相机，图像处理部分和晶体尺寸确定装置，其具有电视监视器。

5. 发明申请

US20130217581A1 OXIDE SUPERCONDUCTIVITY WIRE MATERIAL AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：氧化物超导电性材料及其制造方法
公开(公告)号：US20130217581A1
公开(公告)日：2013-08-22
申请号：US13881818
申请日：2011-10-26
申请人： Masateru Yoshizumi , Koichi Nakaoka , Yasuo Takahashi , Teruo Izumi , Yuh Shiohara , Yuji Aoki , Katsuhisa Kanbayashi
发明人： Masateru Yoshizumi , Koichi Nakaoka , Yasuo Takahashi , Teruo Izumi , Yuh Shiohara , Yuji Aoki , Katsuhisa Kanbayashi
IPC分类号： H01B12/06
CPC分类号： H01B12/06 , H01L39/2425 , H01L39/2483 , Y10T428/2949
摘要： Provided is an oxide superconducting wire material, wherein pinning of magnetic flux, under an environment in which magnetic field is applied, can be conducted efficiently towards any magnetic-field applying angle direction, to secure a high superconductive property. The oxide superconducting wire material (100) is provided with a metal substrate (110), an intermediate layer (120) formed upon the metal substrate (110), and a REBaCuO-system superconductive layer (140) formed upon the intermediate layer (120). RE comprises one or more elements selected from Y, Nd, Sm, Eu, Gd, and Ho. Oxide particles including Zr are distributed within the superconductive layer (140) as magnetic-flux pinning points (145), and the mole ratio (y) of Ba included within the superconductive layer (140) is, when the mole ratio of Zr is assumed to be x, within a range of (1.2+ax)≦y≦(1.8+ax), wherein 0.5≦a≦2.
摘要翻译：提供了一种氧化物超导线材，其中在施加磁场的环境下磁通的钉扎可以有效地向任何磁场施加角度方向传导，以确保高的超导性能。氧化物超导线材（100）设置有金属基板（110），形成在金属基板（110）上的中间层（120）和形成在中间层（120）上的REBaCuO系超导层（140））。 RE包括选自Y，Nd，Sm，Eu，Gd和Ho中的一种或多种元素。包含Zr的氧化物粒子作为磁通钉扎点（145）分布在超导层（140）内，并且当考虑Zr的摩尔比时，超导层（140）中包含的Ba的摩尔比（y）为在（1.2 + ax）@ y @（1.8 + ax）的范围内为x，其中0.5 @ a @ 2。

6. 发明授权

US08290555B2 Superconducting wire, superconducting conductor, and superconducting cable 有权
标题翻译：超导线，超导导体和超导电缆
公开(公告)号：US08290555B2
公开(公告)日：2012-10-16
申请号：US12358916
申请日：2009-01-23
申请人： Masashi Yagi , Shinichi Mukoyama , Yuh Shiohara , Teruo Izumi , Naoyuki Amemiya
发明人： Masashi Yagi , Shinichi Mukoyama , Yuh Shiohara , Teruo Izumi , Naoyuki Amemiya
IPC分类号： H01B12/00 , H01B12/06 , H01B12/04
CPC分类号： H01L39/143 , H01B12/06 , Y02E40/642 , Y10T29/49014
摘要： A superconducting wire having at least a superconducting thin film and a stabilizing film formed one on top of another in order on a substrate having a predetermined width and a predetermined length, the superconducting wire having at least one cut made along a direction of the length of the superconducting wire, the superconducting wire being bendable at the cut in a width direction.
摘要翻译：一种超导线材，其具有至少一层超导薄膜和稳定薄膜，所述超导薄膜和稳定薄膜依次形成在具有预定宽度和预定长度的基底上，所述超导线依次在所述基底上形成，所述至少一个切口沿着超导线，该超导线在宽度方向上可切割。

7. 发明申请

US20120035055A1 RE1Ba2Cu3O7-z SUPERCONDUCTOR 审中-公开
标题翻译： RE1Ba2Cu3O7-z超导体
公开(公告)号：US20120035055A1
公开(公告)日：2012-02-09
申请号：US13154684
申请日：2011-06-07
申请人： Masataka IWAKUMA , Akira Ibi , Teruo Izumi , Yuh Shiohara
发明人： Masataka IWAKUMA , Akira Ibi , Teruo Izumi , Yuh Shiohara
IPC分类号： H01L39/12 , H01F6/00
CPC分类号： H01L39/126 , H01L39/2483
摘要： Problem: To provide an REBCO superconductor which has electromagnetic properties of an extremely small magnetization in a DC magnetic field or an extremely small pinning loss in a fluctuating magnetic field and thereby enable production of a REBCO superconducting wire with an extremely small magnetization and pinning loss.Solution to Problem: A RE1Ba2Cu3O7-z superconductor characterized by having a magnetization-zero-region on its magnetization curve, wherein in the magnetization-zero-region a rate of change of magnetization remains at about zero near zero magnetization, the magnetization curve is formed when an external magnetic field turns from an increase to a decrease or from a decrease to an increase, and RE is one or more of Y, Gd, Nd, Sm, Eu, Yb, Pr, and Ho.
摘要翻译：问题：提供一种REBCO超导体，该超导体在直流磁场中具有非常小的磁化强度的电磁特性，或者在波动的磁场中具有非常小的钉扎损耗，从而能够制造具有非常小的磁化强度和钉扎损耗的REBCO超导线材。解决问题的方法：一种RE1Ba2Cu3O7-z超导体，其特征在于在其磁化曲线上具有磁化 - 零区域，其中在磁化零区域中磁化变化率在零磁化附近保持在约零，形成磁化曲线当外部磁场从增加转变为降低或从降低到增加时，RE是Y，Gd，Nd，Sm，Eu，Yb，Pr和Ho中的一种或多种。

8. 发明授权

US07431868B2 Method of manufacturing a metal substrate for an oxide superconducting wire 有权
标题翻译：制造氧化物超导线金属基板的方法
公开(公告)号：US07431868B2
公开(公告)日：2008-10-07
申请号：US11239204
申请日：2005-09-30
申请人： Toshihiko Maeda , Toru Izumi , Katsuya Hasegawa , Shigenobu Asada , Teruo Izumi , Yuh Shiohara
发明人： Toshihiko Maeda , Toru Izumi , Katsuya Hasegawa , Shigenobu Asada , Teruo Izumi , Yuh Shiohara
IPC分类号： H01B12/00 , H01L39/24 , B05D5/12
CPC分类号： H01L39/2454 , Y10T29/49014
摘要： A metal substrate for an oxide superconducting wire, which comprises a polycrystalline metal substrate with a rolled aggregate structure having a {100} plane which is parallel to the rolled surface and a axis which is parallel to the rolling direction, and an oxide crystal layer comprising an oxide of the polycrystalline metal and formed on a surface of the polycrystalline metal substrate, wherein at least 90% of grain boundaries in the oxide crystal layer have an inclination of 10° or less, and at least 90% of the {100} plane of the oxide crystal layer make an angle of 10° or less with the surface of the polycrystalline metal substrate.
摘要翻译：一种用于氧化物超导线的金属基底，其包括具有平行于轧制表面的{100}平面和平行于轧制方向的<001>轴的轧制骨料结构的多晶金属基体和氧化物所述多晶金属的氧化物形成在所述多晶金属基板的表面上，所述氧化物晶层中的至少90％的晶界倾斜度为10°以下，所述{ 100}面与多晶金属基板的表面成10°以下的角度。

9. 发明授权

US5632811A Method of retaining melt of oxide 失效
标题翻译：保留氧化物熔体的方法
公开(公告)号：US5632811A
公开(公告)日：1997-05-27
申请号：US420519
申请日：1995-04-12
申请人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
发明人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208 , C30B29/16
CPC分类号： C30B29/225 , C30B15/12 , C30B9/00
摘要： In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature. The second crucible is made of a material substantially causing neither melting nor chemical reaction with respect to the oxide-based melt, which can retain the melt more stably than the first material. Even if the melt overflows the first crucible, this overflow is suppressed by the second crucible. It is possible to prepare a crystal of an oxide superconductor such as YBa.sub.2 Cu.sub.3 O.sub.7-x (0.ltoreq.X.ltoreq.1) by the pulling method from the melt which is stored in the first crucible.
摘要翻译：为了稳定地保持基本上由钇或镧系元素，钡，铜和氧组成的氧化物基熔体，在规定的温度下没有杂质污染，从而从熔体制备高质量的大的氧化物晶体，基本上由的钇或镧系元素，钡，铜和氧储存在第一坩埚中，第一坩埚又保持在第二坩埚中。第一坩埚由至少一种形成熔体的元素的氧化物的材料制成，其熔点比熔融保持温度高至少10℃，并且不会导致结构相变达到高于10℃的温度 ℃以上的规定温度，相对于熔体，在室温至高于熔融保持温度10℃的温度范围内的溶解度为5原子％以下。第二坩埚由相对于基于氧化物的熔体基本上不熔化和化学反应的材料制成，其可以比第一材料更稳定地保持熔体。即使熔体溢出第一坩埚，这种溢流被第二坩埚抑制。可以通过从存储在第一坩埚中的熔体的拉伸方法制备氧化物超导体的晶体，例如YBa2Cu3O7-x（0≤X1）。

10. 发明授权

US5536704A Composite material and method of preparing same 失效
标题翻译：复合材料及其制备方法
公开(公告)号：US5536704A
公开(公告)日：1996-07-16
申请号：US240067
申请日：1994-05-09
申请人： Yasuji Yamada , Minoru Tagami , Masaru Nakamura , Hideki Sakai , Koichi Uehara , Yuh Shiohara , Shoji Tanaka
发明人： Yasuji Yamada , Minoru Tagami , Masaru Nakamura , Hideki Sakai , Koichi Uehara , Yuh Shiohara , Shoji Tanaka
IPC分类号： C01G1/00 , C30B15/00 , C30B29/22 , H01L39/02 , H01L39/24 , C30B19/02
CPC分类号： C30B29/225 , C30B15/00 , H01L39/2461 , Y10S505/729
摘要： A composite material comprising a bulky substrate of a Y-series 123 metal oxide crystal, and at least one layer provided on a surface of the substrate and formed of a crystal of a Y-series 123 metal oxide. The substrate may be produced by immersing a seed material in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the seed material contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the seed material and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the seed material as primary crystals and to obtain the bulky substrate. The layer of a Y-series 123 metal oxide may be formed on the substrate by a sputtering method, a vacuum deposition method, a laser abrasion method, a CVD method or a liquid phase epitaxy method.
摘要翻译：一种复合材料，其特征在于，包括Y系123金属氧化物晶体的体积大的基板，以及设置在所述基板的表面上的由Y系123金属氧化物晶体形成的至少一层。基材可以通过将种子材料浸入包含构成金属氧化物的组分的液相中来制备。液相含有位于与种子材料接触液相的位置不同的位置的固相。固相为构成Y系123金属氧化物的溶质提供液相，使得溶质被输送到种子材料和液相接触的位置，从而允许Y系列123金属氧化物生长种子材料作为主要晶体并获得体积大的底物。可以通过溅射法，真空沉积法，激光磨蚀法，CVD法或液相外延法在基板上形成Y系123金属氧化物层。

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