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1. 发明申请

US20050180204A1 Magnetic memory device and method of reading information 有权
标题翻译：磁记忆装置及读取信息的方法
公开(公告)号：US20050180204A1
公开(公告)日：2005-08-18
申请号：US10855497
申请日：2004-05-28
申请人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14
摘要： A memory cell of a magnetic memory device has an MTJ element and one end of the memory cell is selectively electrically connected to a ground potential line. A first bit line is electrically connected to the other end of the memory cell. A sense amplifier amplifies a difference in potential between the first bit line and a second bit line complementary to the first bit line so that the difference is equal to or larger than a difference between an internal power potential and a ground potential. A connection circuit disconnects the MTJ element from an electric connection between the ground potential line and the sense amplifier.
摘要翻译：磁存储器件的存储单元具有MTJ元件，并且存储单元的一端选择性地电连接到地电位线。第一位线电连接到存储器单元的另一端。读出放大器放大与第一位线互补的第一位线和第二位线之间的电位差，使得差值等于或大于内部功率电位和接地电位之间的差。连接电路将MTJ元件与地电位线和读出放大器之间的电气连接断开。

2. 发明授权

US07006374B2 Magnetic memory device and method of reading information 有权
标题翻译：磁记忆装置及读取信息的方法
公开(公告)号：US07006374B2
公开(公告)日：2006-02-28
申请号：US10855497
申请日：2004-05-28
申请人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
IPC分类号： G11C11/14
CPC分类号： G11C11/14
摘要： A memory cell of a magnetic memory device has an MTJ element and one end of the memory cell is selectively electrically connected to a ground potential line. A first bit line is electrically connected to the other end of the memory cell. A sense amplifier amplifies a difference in potential between the first bit line and a second bit line complementary to the first bit line so that the difference is equal to or larger than a difference between an internal power potential and a ground potential. A connection circuit disconnects the MTJ element from an electric connection between the ground potential line and the sense amplifier.
摘要翻译：磁存储器件的存储单元具有MTJ元件，并且存储单元的一端选择性地电连接到地电位线。第一位线电连接到存储器单元的另一端。读出放大器放大与第一位线互补的第一位线和第二位线之间的电位差，使得差值等于或大于内部功率电位和接地电位之间的差。连接电路将MTJ元件与地电位线和读出放大器之间的电气连接断开。

3. 发明授权

US07269060B2 Magnetic random access memory 有权
公开(公告)号：US07269060B2
公开(公告)日：2007-09-11
申请号：US11298597
申请日：2005-12-12
申请人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.

4. 发明申请

US20070030726A1 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20070030726A1
公开(公告)日：2007-02-08
申请号：US11298597
申请日：2005-12-12
申请人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.
摘要翻译：磁性随机存取存储器包括彼此分离并沿着第一方向延伸的第一写入线。第二写入线沿与第一方向不同的方向延伸。 MTJ元件设置在第一写入线和第二写入线之间。连接线连接第一条写入线。下沉器连接到第一写入线的端部和连接线之间的第一写入线，并从第一写入线提取电流。驱动器连接到第一写入线的端部并且将电流提供给第一写入线。

5. 发明申请

US20060056217A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20060056217A1
公开(公告)日：2006-03-16
申请号：US11012178
申请日：2004-12-16
申请人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
发明人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
IPC分类号： G11C5/06
CPC分类号： G11C11/16 , G11C5/063
摘要： A magnetic memory device includes a memory cell array including MTJ elements provided at the coordinates (x, y). First write lines extend in a direction neither perpendicular nor parallel to the magnetization easy axis direction of the MTJ elements. One and the other end of one first write line pass an upper or lower periphery of the memory cell array and a left or right periphery of the memory cell array, respectively. The first write lines and second write lines sandwich the MTJ elements. First write line drivers are connected to both ends of the first write lines, one and the other end of a pair of the first write line drivers connected to ends of one first write lines are located outside the upper or lower periphery and outside the left or right periphery, respectively. Second write line drivers are connected to both ends of the second write lines.
摘要翻译：磁存储器件包括存储单元阵列，其包括在坐标（x，y）处提供的MTJ元件。第一写入线在既不垂直也不平行于MTJ元件的易磁化轴方向的方向上延伸。一个第一写入线的一端和另一端分别通过存储单元阵列的上周边或下周围以及存储单元阵列的左边缘或右边缘。第一个写入行和第二个写入行夹着MTJ元素。第一写入线驱动器连接到第一写入线的两端，连接到一个第一写入线的端部的一对第一写入线驱动器的一端和另一端位于左上方或下侧外侧，右边缘。第二写线驱动器连接到第二写线的两端。

6. 发明授权

US07054188B2 Magnetic memory device 失效
公开(公告)号：US07054188B2
公开(公告)日：2006-05-30
申请号：US11012178
申请日：2004-12-16
申请人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
发明人： Ryousuke Takizawa , Junichi Miyamoto , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C5/063
摘要： A magnetic memory device includes a memory cell array including MTJ elements provided at the coordinates (x, y). First write lines extend in a direction neither perpendicular nor parallel to the magnetization easy axis direction of the MTJ elements. One and the other end of one first write line pass an upper or lower periphery of the memory cell array and a left or right periphery of the memory cell array, respectively. The first write lines and second write lines sandwich the MTJ elements. First write line drivers are connected to both ends of the first write lines, one and the other end of a pair of the first write line drivers connected to ends of one first write lines are located outside the upper or lower periphery and outside the left or right periphery, respectively. Second write line drivers are connected to both ends of the second write lines.

7. 发明授权

US07969768B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07969768B2
公开(公告)日：2011-06-28
申请号：US12627616
申请日：2009-11-30
申请人： Ryousuke Takizawa , Kenji Tsuchida
发明人： Ryousuke Takizawa , Kenji Tsuchida
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1659 , G11C11/1675
摘要： A magnetic random access memory of an aspect of the present invention including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed and recording layers, wherein the magnetization directions of the fixed and recording layers are in a parallel state or in an anti-parallel state depending on a direction of a current flowing between the fixed and recording layers, a first transistor having a gate and a first current path having one end connected to the fixed layer, a second transistor having a gate and a second current path having one end connected to the recording layer, a first bit line to which other end of the first current path is connected, and a second bit line to which other end of the second current path is connected.
摘要翻译：本发明的磁性随机存取存储器包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层和记录层之间的非磁性层，其中固定记录层和记录层的磁化方向根据在固定层和记录层之间流过的电流的方向处于平行状态或反平行状态，具有栅极和第一电流通路的第一晶体管具有一个端部连接到固定层，第二晶体管具有栅极和第二电流路径，其一端连接到记录层，第一电流路径的另一端连接到第一位线和第二位线，第二位线连接第二电流路径的另一端。

8. 发明申请

US20100072530A1 MAGNETIC RANDOM ACCESS MEMORTY 有权
标题翻译：磁性随机存取记忆
公开(公告)号：US20100072530A1
公开(公告)日：2010-03-25
申请号：US12627616
申请日：2009-11-30
申请人： Ryousuke Takizawa , Kenji Tsuchida
发明人： Ryousuke Takizawa , Kenji Tsuchida
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/1659 , G11C11/1675
摘要： A magnetic random access memory of an aspect of the present invention including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed and recording layers, wherein the magnetization directions of the fixed and recording layers are in a parallel state or in an anti-parallel state depending on a direction of a current flowing between the fixed and recording layers, a first transistor having a gate and a first current path having one end connected to the fixed layer, a second transistor having a gate and a second current path having one end connected to the recording layer, a first bit line to which other end of the first current path is connected, and a second bit line to which other end of the second current path is connected.
摘要翻译：本发明的磁性随机存取存储器包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层和记录层之间的非磁性层，其中固定记录层和记录层的磁化方向根据在固定层和记录层之间流过的电流的方向处于平行状态或反平行状态，具有栅极和第一电流通路的第一晶体管具有一个端部连接到固定层，第二晶体管具有栅极和第二电流路径，其一端连接到记录层，第一电流路径的另一端连接到第一位线和第二位线，第二位线连接第二电流路径的另一端。

9. 发明授权

US09256523B2 Semiconductor storage device and control method thereof 有权
标题翻译：半导体存储装置及其控制方法
公开(公告)号：US09256523B2
公开(公告)日：2016-02-09
申请号：US14006296
申请日：2012-02-28
申请人： Ryousuke Takizawa
发明人： Ryousuke Takizawa
IPC分类号： G06F12/00 , G11C7/10 , G11C8/08 , G11C7/24 , G11C8/20 , G11C11/16 , G06F12/14
CPC分类号： G06F12/0238 , G06F3/0604 , G06F3/0644 , G06F3/0688 , G06F12/00 , G06F12/1416 , G06F12/1425 , G06F12/1441 , G06F2212/1016 , G06F2212/202 , G11C7/1009 , G11C7/24 , G11C8/08 , G11C8/20 , G11C11/1695
摘要： A memory includes a cell array including memory cells storing data, and a write driver writing data to the cells. A write driver performs or does not perform writing of write data according to write mask data input along with the write data. A multiplexer selectively outputs a write protect signal or the write mask data. The write protect signal is fixed to a command prohibiting the write data from being written. The command is included in the write mask data. A write protect controller controls the multiplexer to output the write protect signal when an address of a write protect area in the cell array matches an address of the write data. The write protect controller controls the multiplexer to output the write mask data as it is when the address of the write protect area in the cell array does not match the address of the write data.
摘要翻译：存储器包括包括存储数据的存储单元的单元阵列，以及写入驱动器向单元写入数据。写入驱动器根据与写入数据一起输入的写入掩码数据执行或不执行写入数据的写入。复用器选择性地输出写保护信号或写掩码数据。写保护信号固定为禁止写入数据写入的命令。该命令包含在写掩码数据中。写保护控制器控制多路复用器输出写保护信号，当单元阵列中写保护区的地址与写入数据的地址匹配时。写保护控制器控制多路复用器以当单元阵列中的写保护区域的地址与写入数据的地址不匹配时输出写掩码数据。

10. 发明申请

US20140075113A1 SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD THEREOF 有权
标题翻译：半导体存储器件及其控制方法
公开(公告)号：US20140075113A1
公开(公告)日：2014-03-13
申请号：US14006296
申请日：2012-02-28
申请人： Ryousuke Takizawa
发明人： Ryousuke Takizawa
IPC分类号： G06F12/00
CPC分类号： G06F12/0238 , G06F3/0604 , G06F3/0644 , G06F3/0688 , G06F12/00 , G06F12/1416 , G06F12/1425 , G06F12/1441 , G06F2212/1016 , G06F2212/202 , G11C7/1009 , G11C7/24 , G11C8/08 , G11C8/20 , G11C11/1695
摘要： A memory includes a cell array including memory cells storing data, and a write driver writing data to the cells. A write driver performs or does not perform writing of write data according to write mask data input along with the write data. A multiplexer selectively outputs a write protect signal or the write mask data. The write protect signal is fixed to a command prohibiting the write data from being written. The command is included in the write mask data. A write protect controller controls the multiplexer to output the write protect signal when an address of a write protect area in the cell array matches an address of the write data. The write protect controller controls the multiplexer to output the write mask data as it is when the address of the write protect area in the cell array does not match the address of the write data.
摘要翻译：存储器包括包括存储数据的存储单元的单元阵列，以及写入驱动器向单元写入数据。写入驱动器根据与写入数据一起输入的写入掩码数据执行或不执行写入数据的写入。复用器选择性地输出写保护信号或写掩码数据。写保护信号固定为禁止写入数据写入的命令。该命令包含在写掩码数据中。写保护控制器控制多路复用器输出写保护信号，当单元阵列中的写保护区的地址与写入数据的地址匹配时。写保护控制器控制多路复用器以当单元阵列中的写保护区域的地址与写数据的地址不匹配时输出写掩码数据。

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