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1. 发明授权

US4815059A Temperature-compensated optical pick-up device 失效
标题翻译：温度补偿光学拾取装置
公开(公告)号：US4815059A
公开(公告)日：1989-03-21
申请号：US15115
申请日：1987-02-17
申请人： Masahiko Nakayama , Hiroshi Goto
发明人： Masahiko Nakayama , Hiroshi Goto
IPC分类号： G11B7/09 , G11B7/12 , G11B7/125 , G11B7/135 , H01S3/00 , G11B7/00
CPC分类号： G11B7/0916 , G11B7/1376 , G11B7/13922 , G11B2007/13727 , H01S3/005
摘要： A semiconductor laser device includes a semiconductor laser for emitting a laser beam, a coupling lens for collimating the laser beam as passing therethrough and a supporting member for supporting the laser and the coupling lens. As the ambient temperature changes, the supporting member either expands or contracts, thereby varying the distance between the laser and the coupling lens. However, it is so structured that the focal distance of the coupling lens varies in accordance with a change in the wavelength of the laser beam emitted from the laser which is caused by the change in the ambient temperature, so that the change in the distance between the laser and the coupling lens is effectively cancelled by the change in the focal distance of the coupling lens, whereby the laser beam passing through the coupling lens remains collimated even if the ambient temperature changes.
摘要翻译：半导体激光装置包括用于发射激光束的半导体激光器，用于准直激光束的耦合透镜，以及用于支撑激光器和耦合透镜的支撑部件。随着环境温度的变化，支撑构件膨胀或收缩，从而改变激光与耦合透镜之间的距离。然而，其结构使得耦合透镜的焦距根据由环境温度的变化引起的从激光器发射的激光束的波长的变化而变化，使得距离通过耦合透镜的焦距的变化有效地消除了激光和耦合透镜，由此即使环境温度改变，通过耦合透镜的激光束保持准直。

2. 发明授权

US08958239B2 Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit 有权
标题翻译：磁存储元件，磁存储器件，自旋晶体管和集成电路
公开(公告)号：US08958239B2
公开(公告)日：2015-02-17
申请号：US13532981
申请日：2012-06-26
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/00 , G11C11/16 , H01L29/66 , H01L43/08 , H01L27/22 , H01L29/06
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L29/0657 , H01L29/66984 , H01L43/08
摘要： One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：一个实施例提供了一种磁存储元件，包括：其磁化可变的第一铁磁层; 第二铁磁层，其具有分裂成价带的第一带和导带，以及至少从价带至导带连续的第二带; 以及设置在第一铁磁层和第二铁磁层之间的非磁性层。

3. 发明授权

US08878321B2 Magnetoresistive element and producing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08878321B2
公开(公告)日：2014-11-04
申请号：US13618410
申请日：2012-09-14
申请人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
发明人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82 , H01L21/8246 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
摘要翻译：根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。界面层的透过率比体层高，平面尺寸比体层大。

4. 发明授权

US08665639B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08665639B2
公开(公告)日：2014-03-04
申请号：US13407039
申请日：2012-02-28
申请人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
发明人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。第一磁性层具有第一和第二铁磁材料的叠层结构。第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。第一铁磁材料的膜厚比第二铁磁材料薄。

5. 发明授权

US08531875B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08531875B2
公开(公告)日：2013-09-10
申请号：US13426139
申请日：2012-03-21
申请人： Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
发明人： Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
摘要翻译：根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

6. 发明授权

US08530987B2 Magnetic memory including a magnetoresistive element 有权
标题翻译：磁存储器包括磁阻元件
公开(公告)号：US08530987B2
公开(公告)日：2013-09-10
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

7. 发明申请

US20130099338A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20130099338A1
公开(公告)日：2013-04-25
申请号：US13604537
申请日：2012-09-05
申请人： Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masaru Toko
发明人： Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masaru Toko
IPC分类号： H01L29/82
CPC分类号： H01S5/065 , G01B9/02091 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10 , H01S5/50
摘要： According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.
摘要翻译：根据一个实施例，磁存储元件包括具有垂直于膜表面并具有可变磁化方向的磁各向异性的存储层，设置在存储层上的第一非磁性层和设置在第一非磁性层上的参考层，具有垂直于膜表面的磁各向异性，并且具有不变的磁化方向。存储层的面积大于参考层的面积。存储层的端部的磁化小于存储层的中央部的磁化。

8. 发明申请

US20130077388A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT 有权
标题翻译：磁记忆元件，磁记忆体装置，旋转晶体管和集成电路
公开(公告)号：US20130077388A1
公开(公告)日：2013-03-28
申请号：US13532981
申请日：2012-06-26
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L29/0657 , H01L29/66984 , H01L43/08
摘要： One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：一个实施例提供了一种磁存储元件，包括：其磁化可变的第一铁磁层; 第二铁磁层，其具有分裂成价带的第一带和导带，以及至少从价带至导带连续的第二带; 以及设置在第一铁磁层和第二铁磁层之间的非磁性层。

9. 发明授权

US08378437B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08378437B2
公开(公告)日：2013-02-19
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

10. 发明授权

US08363462B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08363462B2
公开(公告)日：2013-01-29
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

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