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1. 发明授权

US4815059A Temperature-compensated optical pick-up device 失效
标题翻译：温度补偿光学拾取装置
公开(公告)号：US4815059A
公开(公告)日：1989-03-21
申请号：US15115
申请日：1987-02-17
申请人： Masahiko Nakayama , Hiroshi Goto
发明人： Masahiko Nakayama , Hiroshi Goto
IPC分类号： G11B7/09 , G11B7/12 , G11B7/125 , G11B7/135 , H01S3/00 , G11B7/00
CPC分类号： G11B7/0916 , G11B7/1376 , G11B7/13922 , G11B2007/13727 , H01S3/005
摘要： A semiconductor laser device includes a semiconductor laser for emitting a laser beam, a coupling lens for collimating the laser beam as passing therethrough and a supporting member for supporting the laser and the coupling lens. As the ambient temperature changes, the supporting member either expands or contracts, thereby varying the distance between the laser and the coupling lens. However, it is so structured that the focal distance of the coupling lens varies in accordance with a change in the wavelength of the laser beam emitted from the laser which is caused by the change in the ambient temperature, so that the change in the distance between the laser and the coupling lens is effectively cancelled by the change in the focal distance of the coupling lens, whereby the laser beam passing through the coupling lens remains collimated even if the ambient temperature changes.
摘要翻译：半导体激光装置包括用于发射激光束的半导体激光器，用于准直激光束的耦合透镜，以及用于支撑激光器和耦合透镜的支撑部件。随着环境温度的变化，支撑构件膨胀或收缩，从而改变激光与耦合透镜之间的距离。然而，其结构使得耦合透镜的焦距根据由环境温度的变化引起的从激光器发射的激光束的波长的变化而变化，使得距离通过耦合透镜的焦距的变化有效地消除了激光和耦合透镜，由此即使环境温度改变，通过耦合透镜的激光束保持准直。

2. 发明授权

US09406871B2 Magnetoresistive element and method of manufacturing the same 有权
公开(公告)号：US09406871B2
公开(公告)日：2016-08-02
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
发明人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
IPC分类号： H01L43/00 , H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12 , H01L43/10
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

3. 发明授权

US09368717B2 Magnetoresistive element and method for manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09368717B2
公开(公告)日：2016-06-14
申请号：US14200742
申请日：2014-03-07
申请人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
发明人： Masaru Toko , Masahiko Nakayama , Kuniaki Sugiura , Yutaka Hashimoto , Tadashi Kai , Akiyuki Murayama , Tatsuya Kishi
IPC分类号： H01L27/02 , H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层。参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。第二区域包含包含在第一区域中的元素，而另一元素与元素不同。磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。存储层没有另一个元素。

4. 发明授权

US09269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer 有权
标题翻译：磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
公开(公告)号：US09269890B2
公开(公告)日：2016-02-23
申请号：US14014210
申请日：2013-08-29
申请人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
发明人： Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
IPC分类号： H01L29/82 , H01L43/08 , H01F10/32 , H01F41/32
CPC分类号： H01L43/08 , H01F10/3254 , H01F10/3259 , H01F41/325
摘要： According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
摘要翻译：根据一个实施例，磁阻效应元件包括参考层，移位消除层，设置在参考层和移位消除层之间的存储层，设置在参考层和存储层之间的隧道势垒层，以及间隔物设置在移位消除层和存储层之间的层，其中当从垂直于图案的方向观察存储层和移位消除层的图案时，存储层的图案设置在移位消除层的图案内部的存储层和移位消除层。

5. 发明授权

US09236563B2 Magnetic memory device and method of manufacturing the magnetic memory device 有权
标题翻译：磁存储器件及其制造方法
公开(公告)号：US09236563B2
公开(公告)日：2016-01-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
发明人： Yutaka Hashimoto , Tadashi Kai , Masahiko Nakayama , Hiroaki Yoda , Toshihiko Nagase , Masatoshi Yoshikawa , Yasuyuki Sonoda
IPC分类号： G11C11/16 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译：根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

6. 发明授权

US08897060B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US08897060B2
公开(公告)日：2014-11-25
申请号：US13432626
申请日：2012-03-28
申请人： Masahiko Nakayama , Katsuya Nishiyama
发明人： Masahiko Nakayama , Katsuya Nishiyama
IPC分类号： G11C11/16 , H01L29/82 , H01L27/22 , H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： According to one embodiment, a magnetoresistance effect element includes first and second magnetic layers having an axis of easy magnetization in a direction perpendicular to a film surface, a first nonmagnetic layer formed between the first and second magnetic layers, a first interface magnetic layer formed between the first magnetic layer and the first nonmagnetic layer, and a second nonmagnetic layer formed in the first interface magnetic layer and having an amorphous structure. An electric current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer makes a magnetization direction in the first magnetic layer variable.
摘要翻译：根据一个实施例，磁阻效应元件包括在垂直于膜表面的方向上具有容易磁化的轴的第一和第二磁性层，形成在第一和第二磁性层之间的第一非磁性层，形成在第一和第二磁性层之间的第一界面磁性层第一磁性层和第一非磁性层，以及形成在第一界面磁性层中并具有非晶结构的第二非磁性层。流过第一磁性层，第一非磁性层和第二磁性层的电流使第一磁性层中的磁化方向变化。

7. 发明授权

US08884389B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08884389B2
公开(公告)日：2014-11-11
申请号：US13618780
申请日：2012-09-14
申请人： Masaru Toko , Masahiko Nakayama , Akihiro Nitayama , Tatsuya Kishi , Hisanori Aikawa , Hiroaki Yoda
发明人： Masaru Toko , Masahiko Nakayama , Akihiro Nitayama , Tatsuya Kishi , Hisanori Aikawa , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L21/8239 , H01L43/10 , H01L43/12 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
摘要翻译：根据一个实施例，磁阻元件包括具有不变且垂直于膜表面的磁化方向的第一磁性层，形成在第一磁性层上的隧道势垒层，以及形成在隧道势垒层上的第二磁性层，并且具有磁化方向可变并垂直于膜表面。第一磁性层包括形成在与隧道势垒层的下部相接触的上侧的界面层，以及形成在下侧并用作垂直磁各向异性的原点的主体层。界面层包括设置在内侧并具有磁化的第一区域和设置在外侧以围绕第一区域并且具有小于第一区域的磁化或不具有磁化的磁化的第二区域。

8. 发明授权

US08349622B2 Magneto-resistive element 有权
公开(公告)号：US08349622B2
公开(公告)日：2013-01-08
申请号：US12361575
申请日：2009-01-29
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

9. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

10. 发明授权

US08107281B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US08107281B2
公开(公告)日：2012-01-31
申请号：US12879544
申请日：2010-09-10
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

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