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1. 发明授权

US06682967B2 Semiconductor device and method of making the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06682967B2
公开(公告)日：2004-01-27
申请号：US10127507
申请日：2002-04-23
申请人： Masahiko Matsumoto , Hirofumi Igarashi
发明人： Masahiko Matsumoto , Hirofumi Igarashi
IPC分类号： H01L218238
CPC分类号： H01L21/76235 , Y10S438/942
摘要： A semiconductor device comprises a semiconductor substrate, a p-type well formed in the semiconductor substrate, an n-type well formed in the semiconductor substrate and positioned contiguous to the p-type well, an n-type diffused region formed in the p-type well, and a p-type diffused region formed in the n-type well, wherein a corner C1 having the p-type well on the inside is present in a part of the boundary pattern between the p-type well and the n-type well. At least one of the two sides defining the corner C1 extends from a top of the corner to the n-well by a predetermined width d over a predetermined length. The particular structure permits suppressing generation of a difference in a well isolation punch-through voltage between the corner and the straight portion of the well boundary of the semiconductor device, making it possible to provide a fine device structure while ensuring a desired well isolation punch-through voltage without relaxing a design rule.
摘要翻译：半导体器件包括半导体衬底，在半导体衬底中形成的p型阱，在半导体衬底中形成并且邻近p型阱定位的n型阱，形成在p型阱中的n型扩散区，以及形成在n型阱中的p型扩散区域，其中在p型阱和n型阱之间的边界图案的一部分中存在内侧具有p型阱的角C1，类型很好。限定拐角C1的两侧中的至少一个从预定长度的预定宽度d从角部的顶部延伸到n孔。该特定结构允许抑制半导体器件的阱边界的角部和直线部分之间的隔离穿透电压的差异的产生，使得可以提供精细的器件结构，同时确保期望的隔离穿孔 - 通过电压不放松设计规则。

2. 发明授权

US06399992B1 Semiconductor device and method of making the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06399992B1
公开(公告)日：2002-06-04
申请号：US09819619
申请日：2001-03-29
申请人： Masahiko Matsumoto , Hirofumi Igarashi
发明人： Masahiko Matsumoto , Hirofumi Igarashi
IPC分类号： H01L31119
CPC分类号： H01L21/76235 , Y10S438/942
摘要： A semiconductor device comprises a semiconductor substrate, a p-type well formed in the semiconductor substrate, an n-type well formed in the semiconductor substrate and positioned contiguous to the p-type well, an n-type diffused region formed in the p-type well, and a p-type diffused region formed in the n-type well, wherein a corner C1 having the p-type well on the inside is present in a part of the boundary pattern between the p-type well and the n-type well. At least one of the two sides defining the corner C1 extends from a top of the corner to the n-well by a predetermined width d over a predetermined length. The particular structure permits suppressing generation of a difference in a well isolation punch-through voltage between the corner and the straight portion of the well boundary of the semiconductor device, making it possible to provide a fine device structure while ensuring a desired well isolation punch-through voltage without relaxing a design rule.
摘要翻译：半导体器件包括半导体衬底，在半导体衬底中形成的p型阱，在半导体衬底中形成并且邻近p型阱定位的n型阱，形成在p型阱中的n型扩散区，以及形成在n型阱中的p型扩散区域，其中在p型阱和n型阱之间的边界图案的一部分中存在内侧具有p型阱的角C1，类型很好。限定拐角C1的两侧中的至少一个从预定长度的预定宽度d从角部的顶部延伸到n孔。该特定结构允许抑制半导体器件的阱边界的角部和直线部分之间的隔离穿透电压的差异的产生，使得可以提供精细的器件结构，同时确保期望的隔离穿孔 - 通过电压不放松设计规则。

3. 发明申请

US20080308220A1 IN-MOLD FORMING MOLD, IN-MOLD FORMING APPARATUS, AND IN-MOLD FORMING METHOD 审中-公开
标题翻译：模具成型模具，模具成型设备和模具成型方法
公开(公告)号：US20080308220A1
公开(公告)日：2008-12-18
申请号：US11854399
申请日：2007-09-12
申请人： Hirofumi Igarashi , Takumi Kudou , Masaaki Iwakiri , Yasuyuki Ohara , Isamu Sakayori
发明人： Hirofumi Igarashi , Takumi Kudou , Masaaki Iwakiri , Yasuyuki Ohara , Isamu Sakayori
IPC分类号： B29C45/00 , B29C45/04
CPC分类号： B29C45/14221 , B29C45/14016
摘要： A film coated with a metal foil is embossed beforehand by a film shaping male mold to impart to the film a shape conformed to a formed article. The film shaping male mold and an injection molding male mold are slid, and injection molding is performed, with the embossed film coated with the metal foil being sandwiched between the injection molding male mold and a shaping female mold. As a result, the metal foil of the film coated with the metal foil is transferred to a product having a deeply concavo-convex surface, without damage to the metal foil, with the quality of the product being ensured.
摘要翻译：用金属箔涂覆的薄膜通过成膜阳模预先压印，以使薄膜具有符合成形品的形状。滑动成型阳模和注模阳模，并且进行注射成型，其中涂覆有金属箔的压花膜夹在注射成型阳模和成型阴模之间。结果，涂覆有金属箔的膜的金属箔被转移到具有深凹凸表面的产品，而不会损坏金属箔，从而确保产品的质量。

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