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1. 发明授权

US5944968A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US5944968A
公开(公告)日：1999-08-31
申请号：US931651
申请日：1997-09-16
申请人： Masahiko Kobayashi , Masahito Ishihara , Hajime Sahase , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Masahito Ishihara , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A sputtering apparatus is provided with a magnetic assembly which is rotated and revolved, and the eccentric distance between the rotation axis and the revolution axis is varied. By this arrangement, erosion profile of a target is made uniform, whereby a uniform thin film is deposited on a substrate surface.
摘要翻译：溅射装置设置有旋转和旋转的磁性组件，并且旋转轴和旋转轴之间的偏心距离变化。通过这种布置，使目标的侵蚀曲线均匀，由此在基板表面上沉积均匀的薄膜。

2. 发明授权

US5925227A Multichamber sputtering apparatus 失效
标题翻译：多层溅射装置
公开(公告)号：US5925227A
公开(公告)日：1999-07-20
申请号：US859077
申请日：1997-05-20
申请人： Masahiko Kobayashi , Masahito Ishihara , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Masahito Ishihara , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/56 , H01L21/203 , H01L21/677
CPC分类号： C23C14/568
摘要： A multichamber sputtering apparatus which is used for manufacturing a semiconductor device and the like. In the apparatus, a plurality of sputter chambers and a degas chamber are airtightly connected to and arranged around a center transfer chamber, and processes including sputtering are continuously conducted in a vacuum. A plurality of heat stages are disposed in the degas chamber so that a plurality of substrates are simultaneously heated. In each heat stage, as required, a heating gas introducing unit for introducing a heating gas with causing the heating gas to make contact with the rear face of the substrate, a pressing mechanism which presses the substrate against the heat stage so as to enhance the surface contact between the heat stage and the substrate, or an electrostatic chucking mechanism is disposed.
摘要翻译：用于制造半导体器件等的多层溅射装置。在该装置中，多个溅射室和脱气室与中心传送室气密连接并布置，并且包括溅射在内的处理在真空中连续进行。多个加热台设置在脱气室中，使多个基板同时加热。在每个加热阶段，根据需要，加热气体引入单元，用于引入加热气体，使加热气体与基板的背面接触;按压机构，将基板压靠在加热台上，以增强设置热台和基板之间的表面接触，或静电吸附机构。

3. 发明授权

US5624499A CVD apparatus 失效
标题翻译： CVD装置
公开(公告)号：US5624499A
公开(公告)日：1997-04-29
申请号：US634676
申请日：1996-04-18
申请人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Manabu Tagami , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4583
摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.
摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于供应吹扫气体。衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道，其中的每一个将净化气体供应到净化气体吹送通道中。通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。

4. 发明授权

US6129046A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6129046A
公开(公告)日：2000-10-10
申请号：US795348
申请日：1997-02-04
申请人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Kazuhito Watanabe , Nobuyuki Takahashi
IPC分类号： C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586
摘要： The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.
摘要翻译：本发明提供一种具有改进的块加热器温度分布和提高生产率的基板处理装置。基板处理装置包括具有排气单元的反应器，用于在其中形成用于处理基板的表面的真空环境，设置在反应器中的支撑构件和用于将反应气体引入反应器的气体引入单元，所述基板支撑构件包括一个块加热器。块式加热器具有一个上下放置的上部，中间和下部构件，各个构件的接合表面通过扩散接合连接。加热构件设置在中间构件和下构件之间，并且在中间构件和上构件之间形成吹扫气体通道。

5. 发明授权

US6070552A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6070552A
公开(公告)日：2000-06-06
申请号：US022880
申请日：1998-02-12
申请人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45519 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32834 , H01J37/32862
摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
摘要翻译：基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。

6. 发明授权

US5956616A Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效
标题翻译：通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译：提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。

7. 发明授权

US06361667B1 Ionization sputtering apparatus 失效
标题翻译：电离溅射装置
公开(公告)号：US06361667B1
公开(公告)日：2002-03-26
申请号：US09039482
申请日：1998-03-16
申请人： Masahiko Kobayashi , Hajime Sahase , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Hajime Sahase , Nobuyuki Takahashi
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/35 , C23C14/351 , H01J37/3266 , H01J37/3405
摘要： This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.
摘要翻译：本发明公开了具有电离溅射粒子功能的电离溅射装置。这些装置包括用于从靶中电离溅射的颗粒的离子化装置。电离装置通过在靶和保持基板的保持架之间的电离空间处施加等离子体产生气体的射频能量来产生等离子体。公开的装置包括防止等离子体从电离空间扩散的磁性装置。另一公开的装置包括将离子化的溅射颗粒定向到衬底的磁性装置。

8. 发明授权

US6022461A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US6022461A
公开(公告)日：2000-02-08
申请号：US740011
申请日：1996-10-23
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/04 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： C23C14/046 , C23C14/228 , C23C14/35 , H01J37/3244 , H01J37/3408
摘要： A long distance sputtering apparatus is provided in which a target and a substrate are disposed so as to oppose each other in a vacuum vessel provided with an exhaust system, wherein the target and substrate are separated by a distance of 150 mm or more. The long distance sputtering apparatus includes a gas-introducing tube, a cylindrical shield, and an exhaust hole. The gas-introducing tube introduces gas from a location closer to the target than halfway between the target and the substrate. The shield is disposed so as to surround the space between the target and the substrate. The exhaust hole is formed closer to the substrate than the gas-introducing tube. The pressure distribution of the sputtering gas between the target and the substrate is characterized by a higher pressure toward the target and a lower pressure toward the substrate.
摘要翻译：提供了一种长距离溅射装置，其中靶和衬底在设置有排气系统的真空容器中彼此相对设置，其中靶和衬底被分开150mm以上的距离。长距离溅射装置包括气体导入管，圆筒形罩和排气孔。气体导入管从距靶子和基板之间的距离较近的位置引入气体。该屏蔽被设置为围绕靶和基板之间的空间。排气孔形成为比气体导入管更靠近基板。靶和基板之间的溅射气体的压力分布的特征在于朝向目标物的压力较高，朝向基板的压力较低。

9. 发明授权

US6077403A Sputtering device and sputtering method 失效
标题翻译：溅射装置和溅射法
公开(公告)号：US6077403A
公开(公告)日：2000-06-20
申请号：US27217
申请日：1998-02-20
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/34 , C23C14/04 , C23C14/35 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3438 , C23C14/046 , C23C14/35 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.
摘要翻译：溅射装置包括配备有排气系统的室。溅射电源将特定的高频电力施加到目标。提供补充电极，使得其围绕靶和衬底之间的溅射颗粒的飞行路径。补充电极被保持在浮置电位，使得其与已经施加高频电力的目标电容耦合，此外，相同频率的高频电力可以直接施加到补充电极。在补充电极的内侧形成有等离子体P'，从靶中释放的溅射粒子被离子化。提取用电场由电场建立装置建立，并且垂直于基板。该结构及其相关方法允许在纵横比高于4的孔的内表面上形成具有良好底部覆盖的膜。

10. 发明授权

US6045672A Sputtering apparatus 失效
标题翻译：溅射装置
公开(公告)号：US6045672A
公开(公告)日：2000-04-04
申请号：US859093
申请日：1997-05-20
申请人： Masahiko Kobayashi , Nobuyuki Takahashi
发明人： Masahiko Kobayashi , Nobuyuki Takahashi
IPC分类号： C23C14/35 , H01J37/34 , H01L21/285
CPC分类号： C23C14/35 , H01J37/3408
摘要： A sputtering apparatus with improved bottom coverage ratio, is used in a film depositing step for manufacturing a semiconductor integrated circuit or the like. In the apparatus, arcuate leakage lines of magnetic force emerge from a magnet mechanism which is part of a cathode, and the lines of magnetic force are ranged into a circumferential shape so as to set a plurality of circumferential magnetic fields on the surface of a target. The plurality of circumferential magnetic fields form a plurality of erosion regions having a circumferential shape, without the regions crossing each other. When the diameter of the deepest erosion portion is small, the incident angle of sputter particles can be made small without increasing the target-to-substrate distance. Specifically, in a portion of the substrate on which sputter particles impinge at the largest incident angle from the deepest erosion portion of the erosion regions, the incident angle is smaller than that in the case of a single erosion region, thereby allowing an improved bottom coverage ratio of the fine holes in the substrate, while maintaining a required film deposition rate.
摘要翻译：具有改善的底部覆盖率的溅射装置用于制造半导体集成电路等的薄膜沉积步骤中。在该装置中，磁力的弓形泄漏线从作为阴极的一部分的磁体机构出现，并且磁力线范围为周向形状，以便在目标的表面上设置多个圆周磁场。多个圆周磁场形成具有圆周形状的多个侵蚀区域，而不区域交叉。当最深蚀刻部分的直径小时，可以使溅射粒子的入射角变小，而不增加目标对基板的距离。具体地说，在溅射粒子以最大入侵角侵蚀侵蚀区域的最深侵蚀部分的基板的一部分上，入射角度小于单一侵蚀区域的入射角度，从而允许改进的底部覆盖同时保持所需的膜沉积速率。

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