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1. 发明授权

US07838379B2 Non-volatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07838379B2
公开(公告)日：2010-11-23
申请号：US12362277
申请日：2009-01-29
申请人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L21/20
CPC分类号： H01L21/8221 , G11C11/5678 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1285 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.
摘要翻译：在相变存储器中，用作选择装置的二极管的电特性非常重要。然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

2. 发明申请

US20090189137A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090189137A1
公开(公告)日：2009-07-30
申请号：US12362277
申请日：2009-01-29
申请人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L47/00
CPC分类号： H01L21/8221 , G11C11/5678 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1285 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.
摘要翻译：在相变存储器中，用作选择装置的二极管的电特性非常重要。然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

3. 发明申请

US20090140233A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090140233A1
公开(公告)日：2009-06-04
申请号：US12268118
申请日：2008-11-10
申请人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , G11C5/02 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.
摘要翻译：一种非易失性半导体存储器件，具有大的存储容量和稳定的重写条件，其中存储单元包括非易失性记录材料层，选择器元件和设置在非易失性记录材料层和选择器元件之间的半导体层， 5〜200nm。

4. 发明授权

US09191030B2 Memory controller, data storage device, and memory controlling method 有权
标题翻译：内存控制器，数据存储设备和内存控制方式
公开(公告)号：US09191030B2
公开(公告)日：2015-11-17
申请号：US13693360
申请日：2012-12-04
申请人： Akihiro Sakata , Yoshinobu Kimura
发明人： Akihiro Sakata , Yoshinobu Kimura
IPC分类号： H03M13/29 , G06F11/10
CPC分类号： H03M13/29 , G06F11/1004 , H03M13/2906
摘要： A memory controller includes a first error detection code generator for generating a first error detection code for data received from a host, a controller to write the data and the first error detection code to nonvolatile memory and to read the data and the first error detection code from the nonvolatile memory, an error detector to perform an error detection based on the data and the first error detection code that are read from the nonvolatile memory, a second error detection code generator to generate a second detection error code based on the data read from the nonvolatile memory, and a mismatch code generator to generate a mismatch code signaling the presence of an error in the data, wherein either the second error detection code or the mismatch code is selected based on the error detection and sent to the host.
摘要翻译：存储器控制器包括：第一错误检测码发生器，用于产生用于从主机接收的数据的第一错误检测码，控制器将数据和第一错误检测码写入非易失性存储器，并读取数据和第一错误检测码来自所述非易失性存储器的误差检测器，基于从所述非易失性存储器读取的所述数据和所述第一检错码执行错误检测;第二检错码发生器，用于基于从所述非易失性存储器读取的数据产生第二检测错误代码; 所述非易失性存储器和不匹配码发生器产生用于发信号通知所述数据中存在错误的不匹配码，其中所述第二错误检测码或所述不匹配码是基于所述错误检测被选择的并被发送给所述主机。

5. 发明申请

US20090181483A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 审中-公开
公开(公告)号：US20090181483A1
公开(公告)日：2009-07-16
申请号：US12403776
申请日：2009-03-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： H01L21/336 , H01L21/26 , H01L21/78
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

6. 发明授权

US07518252B2 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device 失效
标题翻译：薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
公开(公告)号：US07518252B2
公开(公告)日：2009-04-14
申请号：US11509605
申请日：2006-08-25
申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L23/28 , H01L29/04
CPC分类号： H01L21/0268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.
摘要翻译：薄膜半导体衬底包括绝缘衬底，形成在绝缘衬底上的非晶半导体薄膜和位于半导体薄膜上并指示用于结晶的参考位置的多个对准标记。

7. 发明授权

US07413604B2 Process for producing polysilicon film 有权
标题翻译：多晶硅薄膜生产工艺
公开(公告)号：US07413604B2
公开(公告)日：2008-08-19
申请号：US10942911
申请日：2004-09-17
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： C30B1/02
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

8. 发明申请

US20060073664A1 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060073664A1
公开(公告)日：2006-04-06
申请号：US11242961
申请日：2005-10-05
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L21/336
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.
摘要翻译：提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

9. 发明申请

US20060040436A1 Method and apparatus forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 审中-公开
标题翻译：形成结晶半导体层的方法和装置以及半导体装置的制造方法
公开(公告)号：US20060040436A1
公开(公告)日：2006-02-23
申请号：US11203962
申请日：2005-08-16
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： H01L21/84
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

10. 发明申请

US20050272274A1 Apparatus for forming a semiconductor thin film 有权
标题翻译：用于形成半导体薄膜的装置
公开(公告)号：US20050272274A1
公开(公告)日：2005-12-08
申请号：US11198656
申请日：2005-08-05
申请人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
发明人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
IPC分类号： B23K26/06 , C30B1/00 , C30B13/00 , C30B13/24 , H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/02678 , B23K26/06 , B23K26/066 , B23K2101/40 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.
摘要翻译：公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

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