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1. 发明授权

US08410296B2 Surface treatment agent and surface treatment method 有权
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US08410296B2
公开(公告)日：2013-04-02
申请号：US12943466
申请日：2010-11-10
申请人： Masaaki Yoshida , Mai Sugawara , Naohisa Ueno , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Naohisa Ueno , Jun Koshiyama
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , G03F7/11
摘要： Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.
摘要翻译：即使在基材表面的材料为TiN或SiN的情况下，也可以使用这种表面处理剂的表面处理方法，能够高度疏水化的表面处理剂。本发明的表面处理剂含有环状硅氮烷化合物。作为该环状硅氮烷化合物，可以使用2,2,5,5-四甲基-2,5-二脱氧-1-氮杂环戊烷和2,2,6,6-四甲基-2,6-二脱氧-1- 氮杂环己烷和环状三硅氮烷化合物如2,2,4,4,6,6-六甲基环三硅氮烷和2,4,6-三甲基-2,4,6-三乙烯基环三氮烷是优选的。在表面处理中，将基材表面暴露于根据本发明的表面处理剂，并且将基材表面疏水化。

2. 发明申请

US20110054184A1 SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 审中-公开
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US20110054184A1
公开(公告)日：2011-03-03
申请号：US12870439
申请日：2010-08-27
申请人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
IPC分类号： C07F7/00 , C09K3/00
CPC分类号： C07F7/10 , H01L21/0271 , H01L21/306 , H01L21/3105
摘要： The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.
摘要翻译：本发明的目的是提供一种表面处理剂，其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷，以及使用这种表面处理剂的表面处理方法。此外，作为另一个目的，本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

3. 发明授权

US08623131B2 Surface treatment agent and surface treatment method 有权
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US08623131B2
公开(公告)日：2014-01-07
申请号：US12889905
申请日：2010-09-24
申请人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
IPC分类号： C09D5/00
CPC分类号： C09D7/20
摘要： Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.
摘要翻译：提供了能够有效地抑制基板上设置的无机图案或树脂图案的图案塌陷的表面处理剂，使用这样的表面处理剂的表面处理方法以及可以进行甲硅烷基化处理的表面处理剂在基材表面上的高度，以及使用这种表面处理剂的表面处理方法。使用表面处理剂，其用于底物表面的疏水化处理，并且包括含有至少一种具有二硅氮烷结构的化合物和含有五元或六元环内酯化合物的溶剂的甲硅烷基化剂。

4. 发明申请

US20120141940A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTORESIST COMPOSITION FOR THICK FILM, AND METHOD FOR PRODUCING THICK FILM RESIST PATTERN 审中-公开
标题翻译：用于厚膜的化学放大的正极型光电组合物和用于生产厚膜电阻图案的方法
公开(公告)号：US20120141940A1
公开(公告)日：2012-06-07
申请号：US13307911
申请日：2011-11-30
申请人： Takahiro Shimizu , Yasushi Washio , Tomoyuki Ando , Jun Koshiyama
发明人： Takahiro Shimizu , Yasushi Washio , Tomoyuki Ando , Jun Koshiyama
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A chemically amplified positive-type photoresist composition for a thick film capable of forming a thick film resist pattern having superior resolving ability and controllability of dimensions, and being favorable in rectangularity, as well as a method for producing a thick film resist pattern using such a composition. The photoresist composition comprises an acid generator including a cationic moiety and an anionic moiety, and a resin whose alkali solubility increases by the action of an acid.
摘要翻译：一种用于厚膜的化学放大型正型光致抗蚀剂组合物，其可以形成具有优异的分辨能力和尺寸可控性，并且矩形性好的厚膜抗蚀图案，以及使用这种方法制造厚膜抗蚀剂图案的方法组成。光致抗蚀剂组合物包括含有阳离子部分和阴离子部分的酸发生剂，以及碱溶解度随酸的作用而增加的树脂。

5. 发明申请

US20110056511A1 Cleaning liquid and a cleaning method 有权
标题翻译：清洗液和清洁方法
公开(公告)号：US20110056511A1
公开(公告)日：2011-03-10
申请号：US12662760
申请日：2010-05-03
申请人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
发明人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
IPC分类号： B08B7/00 , C11D3/43 , C11D3/44
CPC分类号： C11D1/72 , C11D1/667 , C11D1/722 , C11D3/43 , C11D11/0047 , G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
摘要翻译：问题：提供具有优良倾斜能力的清洗液和清洗方法。在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。解决方法：在液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和聚甘油基团和余量的水; 和使用它的清洁方法。

6. 发明授权

US07897325B2 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US07897325B2
公开(公告)日：2011-03-01
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03F7/26 , G03F7/40 , C11D7/04
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

7. 发明申请

US20100104987A1 COMPOSITION FOR ANTIREFLECTION FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION 有权
标题翻译：用于抗反应薄膜形成的组合物和使用组合物形成抗蚀剂图案的方法
公开(公告)号：US20100104987A1
公开(公告)日：2010-04-29
申请号：US12451747
申请日：2008-05-16
申请人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
发明人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
IPC分类号： G03F7/11 , C09D133/02 , C09D101/00
CPC分类号： H01L21/0276 , G03F7/0046 , G03F7/0048 , G03F7/091
摘要： A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.
摘要翻译：提供了用于在抗蚀剂膜上形成抗反射膜的防反射膜形成用组合物，用于形成抗反射膜的组合物易于处理，并且能够形成具有优异光学性的抗反射膜特征与使用全氟辛烷磺酸形成的抗反射膜类似。一种用于形成抗反射膜的组合物，其用于设置在包含某种氟化合物的抗蚀剂膜上。用于形成抗反射膜的组合物可以形成具有优异的光学特性的抗反射膜，因为某些氟化合物有助于提高抗反射膜的光学特性。

8. 发明申请

US20080227678A1 Cleaning Liquid for Lithography and Method of Cleaning Therewith 有权
标题翻译：用于平版印刷的清洁液及其清洗方法
公开(公告)号：US20080227678A1
公开(公告)日：2008-09-18
申请号：US11791836
申请日：2005-12-26
申请人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
发明人： Jun Koshiyama , Yasumitsu Taira , Chima Shinohara
IPC分类号： G03F7/42
CPC分类号： G03F7/168
摘要： A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.
摘要翻译：用于光刻的清洁液体，其具有相当优异的清洁性能，可用于各种组合物的抗蚀剂，例如用于i线，KrF和ArF的各种抗蚀剂，硅抗蚀剂和化学放大型正性抗蚀剂，并且具有优异的后处理干燥性通过清洁没有抗蚀剂性能的任何劣化。提供了一种用于光刻的清洁液体，其包含至少一种选自乙酸和丙酸的低级烷基酯和至少一种选自每分子具有5至7个碳原子的酮的成员（B）（A）:( B）的质量比为4：6〜7：3。

9. 发明授权

US09244358B2 Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate 有权
标题翻译：表面处理液，表面处理方法，疏水化方法和疏水化底物
公开(公告)号：US09244358B2
公开(公告)日：2016-01-26
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
IPC分类号： C09K3/18 , G03F7/40 , H01L23/29 , G03F7/16 , H01L21/306 , G03F7/20
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译：公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

10. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

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