专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

2. 发明申请

US20080096141A1 Cleaning Liquid For Lithography And Method For Resist Pattern Formation 有权
标题翻译：用于平版印刷的清洁液和抗蚀剂图案形成方法
公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03C5/56 , G03C11/00
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

3. 发明授权

US07795197B2 Cleaning liquid for lithography and method for resist pattern formation 有权
标题翻译：光刻用清洗液及抗蚀剂图案形成方法
公开(公告)号：US07795197B2
公开(公告)日：2010-09-14
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D1/75
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8-20个碳原子的烷基或羟烷基; R2和R3表示碳原子数1〜5的烷基或羟烷基。

4. 发明授权

US07741260B2 Rinsing fluid for lithography 失效
标题翻译：用于光刻的冲洗液
公开(公告)号：US07741260B2
公开(公告)日：2010-06-22
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： C11D7/32
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。

5. 发明申请

US20060128581A1 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US20060128581A1
公开(公告)日：2006-06-15
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D9/00
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

6. 发明授权

US07897325B2 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US07897325B2
公开(公告)日：2011-03-01
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03F7/26 , G03F7/40 , C11D7/04
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

7. 发明申请

US20080026975A1 Rinsing Fluid for Lithography 失效
标题翻译：用于平版印刷的冲洗液
公开(公告)号：US20080026975A1
公开(公告)日：2008-01-31
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式其中R 1和R 2各自是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代的烷基，或R 1和R 2与它们所键合的SO 2 H 2基团一起并且氮原子可以形成五元或六元环; R f是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; 且R f'是至少部分氟化的具有8至20个碳原子的烷基。

8. 发明授权

US07811748B2 Resist pattern forming method and composite rinse agent 有权
标题翻译：抗蚀剂图案形成方法和复合漂洗剂
公开(公告)号：US07811748B2
公开(公告)日：2010-10-12
申请号：US11587252
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/40 , C11D7/32
CPC分类号： G03F7/40
摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.
摘要翻译：基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。

9. 发明申请

US20090004608A1 Detergent For Lithography And Method Of Forming Resist Pattern With The Same 失效
标题翻译：用于光刻的洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US20090004608A1
公开(公告)日：2009-01-01
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： G03F7/20 , C11D7/32
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

10. 发明申请

US20080193876A1 Rinsing Liquid for Lithography and Method for Resist Pattern Formation 审中-公开
标题翻译：用于光刻的冲洗液和抗蚀剂图案形成方法
公开(公告)号：US20080193876A1
公开(公告)日：2008-08-14
申请号：US11661426
申请日：2005-08-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： H01L21/0273 , G03F7/32
摘要： This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same. A resist pattern is formed by preparing a rinsing liquid for lithography comprising an aqueous solution containing (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in its molecular structure and (B) at least one member selected from aliphatic alcohols and alkyletherification products thereof, and then carrying out (1) the step of providing a photoresist film on a substrate, (2) the step of selectively exposing the photoresist film thorough a mask pattern, (3) the step of heat-treating the exposed photoresist film, (4) the step of carrying out alkali development, and (5) the step of treating the developed film with the rinsing liquid for lithography.
摘要翻译：本发明提供了一种新颖的光刻冲洗液，其中光致抗蚀剂图案可以减少表面缺陷，即所谓的缺陷，而不会牺牲产品的质量，并且同时可赋予电子束照射以抑制抗蚀剂图案的收缩，以及使用其的抗蚀剂图案形成方法。通过制备用于光刻的冲洗液，通过制备含有（A）在其分子结构中具有氮原子的水溶性和/或碱溶性聚合物的水溶液形成抗蚀剂图案，（B）至少一种选自脂肪族醇和烷基醚化产物，然后进行（1）在基板上提供光致抗蚀剂膜的步骤，（2）通过掩模图案选择性地曝光光致抗蚀剂膜的步骤，（3）热处理暴露的光致抗蚀剂膜，（4）进行碱显影的步骤，（5）用用于光刻的冲洗液处理显影膜的步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式