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1. 发明申请

US20060076513A1 Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method 审中-公开
标题翻译：可变矩形电子束曝光装置和图案曝光形成方法
公开(公告)号：US20060076513A1
公开(公告)日：2006-04-13
申请号：US11055107
申请日：2005-02-11
申请人： Yutaka Nakamura , Masaaki Miyajima , Hiromi Hoshino
发明人： Yutaka Nakamura , Masaaki Miyajima , Hiromi Hoshino
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31776
摘要： A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles is provided which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus comprises: a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
摘要翻译：提供了用于形成不同角度的矩形束的可变矩形电子束曝光装置，其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。该装置包括：第一狭缝构件（10），多个矩形孔（11,12）分别以不同的角度布置; 第二狭缝构件（20），其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔（21,22）布置; 以及偏转单元（40），用于偏转已经透过第一狭缝部件的多个孔的电子束，使得当透过第一狭缝部件的第一孔的电子束透过相应的第二狭缝部件的第一开口部分，通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。

2. 发明授权

US07205557B2 Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method 失效
标题翻译：可变矩形电子束曝光装置和图案曝光形成方法
公开(公告)号：US07205557B2
公开(公告)日：2007-04-17
申请号：US11319205
申请日：2005-12-28
申请人： Masaaki Miyajima , Yutaka Nakamura , Hiromi Hoshino
发明人： Masaaki Miyajima , Yutaka Nakamura , Hiromi Hoshino
IPC分类号： H01L21/27
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G21K1/08 , H01J2237/31776
摘要： A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus includes a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
摘要翻译：一种用于形成不同角度的矩形光束的可变矩形电子束曝光装置，其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。该装置包括：第一狭缝构件（10），多个矩形孔（11,12）分别以不同的角度布置; 第二狭缝构件（20），其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔（21,22）布置; 以及偏转单元（40），用于偏转已经透过第一狭缝部件的多个孔的电子束，使得当透过第一狭缝部件的第一孔的电子束透过相应的第二狭缝部件的第一开口部分，通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。

3. 发明申请

US20060169925A1 Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method 失效
标题翻译：可变矩形电子束曝光装置和图案曝光形成方法
公开(公告)号：US20060169925A1
公开(公告)日：2006-08-03
申请号：US11319205
申请日：2005-12-28
申请人： Masaaki Miyajima , Yutaka Nakamura , Hiromi Hoshino
发明人： Masaaki Miyajima , Yutaka Nakamura , Hiromi Hoshino
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G21K1/08 , H01J2237/31776
摘要： A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus includes a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
摘要翻译：一种用于形成不同角度的矩形光束的可变矩形电子束曝光装置，其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。该装置包括：第一狭缝构件（10），多个矩形孔（11,12）分别以不同的角度布置; 第二狭缝构件（20），其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔（21,22）布置; 以及偏转单元（40），用于偏转已经透过第一狭缝构件的多个孔的电子束，使得当透过第一狭缝构件的第一孔的电子束透过相应的第二狭缝部件的第一开口部分，通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。

4. 发明授权

US08141009B2 Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process 有权
标题翻译：在光刻过程中使用电子束曝光和掩模版曝光准备数据进行混合曝光
公开(公告)号：US08141009B2
公开(公告)日：2012-03-20
申请号：US12398664
申请日：2009-03-05
申请人： Masaaki Miyajima , Hiromi Hoshino , Hiroshi Takita , Kozo Ogino
发明人： Masaaki Miyajima , Hiromi Hoshino , Hiroshi Takita , Kozo Ogino
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N×N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.
摘要翻译：一种用于制备用于曝光的数据的方法包括：从掩模版准备规则形成第一多个矩形图案; 利用所述第一矩形图案衬里进行掩模版曝光的物体图案，并从所述物体图案中的所述第一多个矩形图案提取以N×N矩阵设置的第二多个矩形图案; 并且基于第二多个矩形图案之间的距离执行违反检测处理和对掩模版曝光图案的图案宽度和图案距离的校正处理。

5. 发明授权

US06275604B1 Method and apparatus for generating semiconductor exposure data 失效
标题翻译：用于产生半导体曝光数据的方法和装置
公开(公告)号：US06275604B1
公开(公告)日：2001-08-14
申请号：US09132461
申请日：1998-08-12
申请人： Masaaki Miyajima , Yoshio Ito
发明人： Masaaki Miyajima , Yoshio Ito
IPC分类号： G06K900
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/31776
摘要： A computer implemented method and an apparatus for generating exposure data of a layout pattern used to fabricate semiconductor integrated circuits. The layout pattern is first analyzed to determine if it can be modified to one or more predefined patterns without having to segment the layout pattern into rectangular patterns. The layout pattern is then modified to the one or more predefined patterns. The modified pattern is also analyzed to determine if it can be modified into segmental block patterns and if so, it is modified accordingly. Finally, exposure data is generated using the modified segmental block patterns.
摘要翻译：一种用于产生用于制造半导体集成电路的布局图案的曝光数据的计算机实现的方法和装置。首先分析布局图案以确定是否可以将其修改为一个或多个预定义图案，而不必将布局图案分割成矩形图案。然后将布局模式修改为一个或多个预定义模式。还分析了修改后的图案，以确定是否可以将其修改为分段块模式，如果是，则进行相应的修改。最后，使用修改的分段块模式生成曝光数据。

6. 发明授权

US5995878A Method and apparatus for generating exposure data of semiconductor integrated circuit 失效
标题翻译：用于生成半导体集成电路的曝光数据的方法和装置
公开(公告)号：US5995878A
公开(公告)日：1999-11-30
申请号：US963587
申请日：1997-11-04
申请人： Masaaki Miyajima
发明人： Masaaki Miyajima
IPC分类号： G03F7/22 , G06F17/50 , G06G7/66 , H01L21/027 , G06F19/00
CPC分类号： G03F7/704 , B82Y10/00 , B82Y40/00 , G03F7/70508 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： Producing an exposure data used for exposing a design pattern data of a semiconductor integrated circuit on an exposure medium. Repetitive exposure pattern data is extracted from the design pattern data as a group of exposure pattern data. The group of exposure pattern data includes plural pieces of the repetitive exposure pattern data. A rearrangement information table, which includes information for placing the plural pieces of repetitive exposure pattern data in a predetermined rearrangement area, is generated. The design pattern data is rearranged based on the rearrangement information table to generate the exposure data.
摘要翻译：生成用于在曝光介质上曝光半导体集成电路的设计图案数据的曝光数据。从设计图案数据中提取重复曝光图案数据作为一组曝光图案数据。曝光图案数据组包括多个重复曝光图案数据。产生重排信息表，其包括用于将多个重复曝光图案数据放置在预定重排区域中的信息。基于重排信息表重新设计图案数据以产生曝光数据。

7. 发明授权

US5984505A Block exposure of semiconductor wafer 失效
标题翻译：半导体晶片的块状曝光
公开(公告)号：US5984505A
公开(公告)日：1999-11-16
申请号：US816685
申请日：1997-03-13
申请人： Masaaki Miyajima
发明人： Masaaki Miyajima
IPC分类号： G03F1/20 , G03F1/68 , H01J37/302 , H01J37/317 , H01L21/027 , G06F19/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174
摘要： Improved block exposure techniques for a semiconductor wafer that use a block mask with an exposure pattern separated into blocks are disclosed. Each block comprises a plurality of block elements having parts of the exposure pattern and installed on the block mask. A plurality of block elements having predetermined patterns are extracted from the exposure pattern. Each of the predetermined patterns is present in at least one partial area of an associated one of the block elements. A combination of a plurality of extracted block elements having patterns arrangeable in a single block is specified based on pattern present areas of the individual extracted block elements. The patterns of combined extracted block elements are laid out in a single block and an irradiation mode of that block is changed from a full irradiation mode to a partial irradiation mode.
摘要翻译：公开了一种使用具有分离成块的曝光图案的块掩模的半导体晶片的改进的块曝光技术。每个块包括具有部分曝光图案并安装在块掩模上的多个块元件。从曝光图案中提取具有预定图案的多个块元素。每个预定模式存在于相关联的一个块元件的至少一个局部区域中。基于单独提取的块元素的图案存在区域来指定具有可排列在单个块中的图案的多个提取的块元素的组合。组合提取的块元素的图案被布置在单个块中，并且该块的照射模式从完全照射模式改变为部分照射模式。

8. 发明授权

US5917579A Block exposure of semiconductor wafer 失效
标题翻译：半导体晶片的块状曝光
公开(公告)号：US5917579A
公开(公告)日：1999-06-29
申请号：US893547
申请日：1997-07-08
申请人： Masaaki Miyajima
发明人： Masaaki Miyajima
IPC分类号： G03F1/68 , G03F7/20 , H01J37/302 , H01L21/027 , G03B27/42 , H01J37/304
CPC分类号： H01J37/3026
摘要： A mask and a block exposure method for transferring a plurality of patterns of the same shape onto an exposure medium while forming the cross-sectional shape of a beam emitted from a light source into a desired pattern. The mask has at least one basic pattern formed by extracting portions of a common shape from pattern information to be exposed. A plurality of blocks are arranged on the mask. Each block includes a plurality of the basic patterns.
摘要翻译：一种掩模和块曝光方法，用于将从光源发射的光束的横截面形状形成期望的图案，将相同形状的多个图案转印到曝光介质上。掩模具有通过从要曝光的图案信息中提取共同形状的部分而形成的至少一个基本图案。多个块布置在掩模上。每个块包括多个基本模式。

9. 发明授权

US5537487A Pattern judging method, mask producing method, and method of dividing block pattern for use in block exposure 失效
标题翻译：图案判断方法，掩模制作方法以及块模块曝光中使用的块图案的分割方法
公开(公告)号：US5537487A
公开(公告)日：1996-07-16
申请号：US257204
申请日：1994-06-09
申请人： Masaaki Miyajima , Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
发明人： Masaaki Miyajima , Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
IPC分类号： G06F17/50 , H01J37/302 , G06K9/00
CPC分类号： G06F17/5081 , H01J37/3026
摘要： A method of dividing a block pattern for use in a block exposure, to be implemented on a computer, divides an arbitrary block which is to be formed in a block mask that is used for the block exposure when the arbitrary block is judged as including a prohibiting pattern which is undesirable from a point of view of the block exposure. This method comprises the steps of (a) dividing the arbitrary block in a first direction to obtain a first block having a first dividing width along a second direction which is perpendicular to the first direction, (b) dividing a remaining block portion of the arbitrary block excluding the first block in the first direction to obtain a first divided portion having a second dividing width along the second direction, and merging the first dividing portion to the first block if the second dividing width is less than a predetermined width, and (c) searching the first block in the first direction after the step (b) and merging one of two adjacent first patterns within the first block to a second block if a pattern interval which is less than a predetermined value extends along the first direction between the first patterns.
摘要翻译：将要在计算机上实现的块曝光中使用的块图案分割的方法将当将任意块判断为包括一个块时将要用于块曝光的块掩模中形成的任意块划分为从块曝光的观点来看，禁止图案是不期望的。该方法包括以下步骤：（a）沿第一方向划分任意块以获得具有垂直于第一方向的第二方向具有第一分割宽度的第一块，（b）将任意块的剩余块部分在第一方向排除第一块以获得沿着第二方向具有第二分割宽度的第一分割部分，并且如果第二分割宽度小于预定宽度，则将第一分割部分合并到第一块，并且（c ）在步骤（b）之后沿第一方向搜索第一块，并且如果小于预定值的图案间隔在第一块之间的第一方向上延伸，则将第一块内的两个相邻第一图案中的一个合并到第二块中模式。

10. 发明授权

US5046012A Pattern data processing method 失效
标题翻译：模式数据处理方法
公开(公告)号：US5046012A
公开(公告)日：1991-09-03
申请号：US366483
申请日：1989-06-15
申请人： Kazumasa Morishita , Yoshitada Aihara , Yoshihisa Komura , Masaaki Miyajima , Minoru Suzuki
发明人： Kazumasa Morishita , Yoshitada Aihara , Yoshihisa Komura , Masaaki Miyajima , Minoru Suzuki
IPC分类号： G06F17/50 , G06T11/20
CPC分类号： G06T11/206 , G06F17/5068 , G06F17/5081
摘要： A pattern data processing method processes hierarchical pattern data which has a hierarchical structure and describes in each level thereof one or a plurality of internal cells constituting one or a plurality of logic blocks of a semiconductor integrated circuit device which is to be produced. The pattern processing method comprises the steps of defining a frame at a boundary between a level i of the hierarchical structure and a level i+1 which is higher than the level i, cutting a first portion of a pattern which protrudes out of the frame form the level i to the level i+1 and defining the cut, first portion as a pattern of the level i+1, cutting a second portion of a pattern which protrudes out of the frame from the level i+1 to the level i and deleting the cut, second portion, and repeating the steps of cutting the first and second portions for a predetermined number of levels for increasing values of i, where i=1, 2, . . . , n, n is an arbitrary integer and the pattern of the semiconductor integrated circuit device is described in a highest level n+1.

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