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1. 发明授权

US5537487A Pattern judging method, mask producing method, and method of dividing block pattern for use in block exposure 失效
标题翻译：图案判断方法，掩模制作方法以及块模块曝光中使用的块图案的分割方法
公开(公告)号：US5537487A
公开(公告)日：1996-07-16
申请号：US257204
申请日：1994-06-09
申请人： Masaaki Miyajima , Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
发明人： Masaaki Miyajima , Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
IPC分类号： G06F17/50 , H01J37/302 , G06K9/00
CPC分类号： G06F17/5081 , H01J37/3026
摘要： A method of dividing a block pattern for use in a block exposure, to be implemented on a computer, divides an arbitrary block which is to be formed in a block mask that is used for the block exposure when the arbitrary block is judged as including a prohibiting pattern which is undesirable from a point of view of the block exposure. This method comprises the steps of (a) dividing the arbitrary block in a first direction to obtain a first block having a first dividing width along a second direction which is perpendicular to the first direction, (b) dividing a remaining block portion of the arbitrary block excluding the first block in the first direction to obtain a first divided portion having a second dividing width along the second direction, and merging the first dividing portion to the first block if the second dividing width is less than a predetermined width, and (c) searching the first block in the first direction after the step (b) and merging one of two adjacent first patterns within the first block to a second block if a pattern interval which is less than a predetermined value extends along the first direction between the first patterns.
摘要翻译：将要在计算机上实现的块曝光中使用的块图案分割的方法将当将任意块判断为包括一个块时将要用于块曝光的块掩模中形成的任意块划分为从块曝光的观点来看，禁止图案是不期望的。该方法包括以下步骤：（a）沿第一方向划分任意块以获得具有垂直于第一方向的第二方向具有第一分割宽度的第一块，（b）将任意块的剩余块部分在第一方向排除第一块以获得沿着第二方向具有第二分割宽度的第一分割部分，并且如果第二分割宽度小于预定宽度，则将第一分割部分合并到第一块，并且（c ）在步骤（b）之后沿第一方向搜索第一块，并且如果小于预定值的图案间隔在第一块之间的第一方向上延伸，则将第一块内的两个相邻第一图案中的一个合并到第二块中模式。

2. 发明授权

US5952155A Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
标题翻译：掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置
公开(公告)号：US5952155A
公开(公告)日：1999-09-14
申请号：US119593
申请日：1998-07-21
申请人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20 , H01J37/317 , G03F9/00 , A61N5/00 , G03C5/00 , G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.
摘要翻译：将物体暴露于电子束的装置使用由阻挡电子束的材料板形成的掩模，并且其中限定有多个图案曝光块，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形的电子束通过其中以使物体上的相应图案曝光。根据控制电子束通过的电流水平，每个孔限定区域具有形成在其中的相应的单个孔或相应的多个间隔开的孔，并且其总面积尺寸被选择为小于孔限定区域的面积尺寸同时减少通过孔的电子束或图案曝光块的每个孔限定部分的孔的库仑相互作用。

3. 发明授权

US5849437A Electron beam exposure mask and method of manufacturing the same and electron beam exposure method 失效
公开(公告)号：US5849437A
公开(公告)日：1998-12-15
申请号：US590827
申请日：1996-01-24
申请人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
发明人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
IPC分类号： G03F1/20 , G03F7/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/3174 , H01J2237/31769 , H01J2237/31794
摘要： In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.

4. 发明授权

US5824437A Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
标题翻译：掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置
公开(公告)号：US5824437A
公开(公告)日：1998-10-20
申请号：US685958
申请日：1996-07-22
申请人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.
摘要翻译：用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形的电子束通过其中以使物体上的相应图案曝光。每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸，同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。

5. 发明授权

US5347592A Pattern judging method and mask producing method using the pattern judging method 失效
标题翻译：模式判断方法和使用模式判断方法的掩模制作方法
公开(公告)号：US5347592A
公开(公告)日：1994-09-13
申请号：US917260
申请日：1992-07-23
申请人： Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
发明人： Hiroshi Yasuda , Satoru Yamazaki , Kiichi Sakamoto
IPC分类号： H01L21/027 , G03F1/20 , G06F17/50 , H01J37/302 , G06K9/00
CPC分类号： G03F1/20 , G06F17/5081 , H01J37/3026
摘要： A pattern judging method which is to be implemented on a computer automatically determines whether or not a pattern should be prohibited from being formed in a mask. The pattern judging method includes the steps of (a) dividing an area of the mask where a desired pattern is to be formed into a plurality of regions, (b) calculating a predetermined physical quantity for each of the regions for a case where one or a plurality of openings corresponding to the desired pattern are formed in the mask, and (c) prohibiting the desired pattern from being formed in the mask if the predetermined quantity calculated in the step (b) exceeds a threshold value for at least one of the regions.
摘要翻译：要在计算机上实现的模式判断方法自动地确定是否应该禁止在掩模中形成图案。模式判断方法包括以下步骤：（a）将要形成的期望图案的掩模的区域划分为多个区域，（b）为每个区域计算一个或多个区域的情况下的预定物理量，如果在步骤（b）中计算的预定量超过阈值中的至少一个，则在掩模中形成对应于期望图案的多个开口，和（c）禁止在掩模中形成期望的图案地区。

6. 发明授权

US5256881A Mask and charged particle beam exposure method using the mask 失效
标题翻译：掩模和带电粒子束曝光方法使用掩模
公开(公告)号：US5256881A
公开(公告)日：1993-10-26
申请号：US896715
申请日：1992-06-10
申请人： Satoru Yamazaki , Hiroshi Yasuda , Kiichi Sakamoto
发明人： Satoru Yamazaki , Hiroshi Yasuda , Kiichi Sakamoto
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31776 , H01J2237/31788
摘要： A transmission mask is used when exposing patterns by a charged particle beam which passes therethrough. The transmission mask includes a plate, and a plurality of rectangular blocks formed on a surface of the plate and having an area approximately equal to a cross sectional area of the charged particle beam irradiated thereon, where the blocks include a first block in which at least one transmission hole is provided and a second block in which no transmission hole is provided. The transmission of the first block is partly irradiated by the charged particle beam when varying the size of the exposing pattern. A single second block is provided immediately adjacent to at least two first blocks, so that an irradiating position of the charged particle beam can be varied with respect to both the two first blocks from the single second block.

7. 发明授权

US6090527A Electron beam exposure mask and method of manufacturing the same and electron beam exposure method 失效
标题翻译：电子束曝光掩模及其制造方法和电子束曝光方法
公开(公告)号：US6090527A
公开(公告)日：2000-07-18
申请号：US87869
申请日：1998-06-01
申请人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
发明人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
IPC分类号： G03F1/20 , G03F7/20 , H01J37/317 , G03F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/2047 , H01J37/3174 , H01J2237/31769 , H01J2237/31794
摘要： In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.
摘要翻译：在本发明的曝光掩模中，沿着岛状图案的周边边缘和半岛状图案，通过横梁布置多个开口区域，每个开口区域具有不被拆分的尺寸，用于屏蔽带电粒子的透射。

8. 发明授权

US06242751B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06242751B1
公开(公告)日：2001-06-05
申请号：US09353586
申请日：1999-07-15
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： H01J37302
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

9. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

10. 发明授权

US5757015A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5757015A
公开(公告)日：1998-05-26
申请号：US634410
申请日：1996-04-18
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还介绍了一种用于执行该方法的设备。

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