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1. 发明授权

US07003875B2 Method for manufacturing piezo-resonator 有权
标题翻译：制造压电谐振器的方法
公开(公告)号：US07003875B2
公开(公告)日：2006-02-28
申请号：US10968976
申请日：2004-10-21
申请人： Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
发明人： Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
IPC分类号： H05K3/02 , B44C1/22 , H01L4/04
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
摘要翻译：一种制造压电谐振器的方法，包括：在压电膜14上形成上电极层20的第一步骤，用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤，以便具有上电极的形状，除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤，去除抗蚀剂21的第四步骤，第五步使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤第二上电极15b，以及除去抗蚀剂22的第七步骤。

2. 发明授权

US07239067B2 Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component 有权
标题翻译：压电薄膜谐振器的制造方法，压电薄膜谐振器的制造装置，压电薄膜谐振器和电子部件
公开(公告)号：US07239067B2
公开(公告)日：2007-07-03
申请号：US10811812
申请日：2004-03-30
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
IPC分类号： H01L41/00 , H02N2/00 , H01B13/00
CPC分类号： H03H9/564 , H03H3/02
摘要： A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.
摘要翻译：一种制造压电薄膜谐振器的方法，在基板上形成压电膜以覆盖形成在基板上的下电极之后，形成用于在压电膜上形成上电极的电极材料层，形成在电极材料层上形成预定形状，然后蚀刻电极材料层以形成上部电极。在形成电极材料层的步骤之前，形成用于在蚀刻电极材料层期间保护压电膜的保护层，以覆盖不形成上部电极的压电膜的至少一部分，并且电极然后形成材料层以覆盖保护层。

3. 发明申请

US20050090033A1 Method for manufacturing piezo-resonator 有权
标题翻译：制造压电谐振器的方法
公开(公告)号：US20050090033A1
公开(公告)日：2005-04-28
申请号：US10968976
申请日：2004-10-21
申请人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
发明人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
IPC分类号： H01L41/22 , H01L21/00 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/253 , H01L41/29 , H03H3/02 , H03H3/04 , H03H9/56
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
摘要翻译：一种制造压电谐振器的方法，包括：在压电膜14上形成上电极层20的第一步骤，用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤，以便具有上电极的形状，除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤，去除抗蚀剂21的第四步骤，第五步使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤第二上电极15b，以及除去抗蚀剂22的第七步骤。

4. 发明申请

US20050006984A1 Thin-film bulk acoustic oscillator and method of manufacturing same 有权
标题翻译：薄膜体声波振荡器及其制造方法
公开(公告)号：US20050006984A1
公开(公告)日：2005-01-13
申请号：US10814120
申请日：2004-04-01
申请人： Eiju Komuro , Hisatoshi Saitou , Yoshinari Yamashita
发明人： Eiju Komuro , Hisatoshi Saitou , Yoshinari Yamashita
IPC分类号： H01L41/09 , H01L41/04 , H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/337 , H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/175 , H03H3/02 , H03H9/174
摘要： A thin-film bulk acoustic oscillator comprises: a base; a barrier layer disposed on the base; a lower electrode disposed on the barrier layer; a piezoelectric thin film disposed on the lower electrode; and an upper electrode disposed on the piezoelectric thin film. The piezoelectric thin film includes a columnar crystal that extends in the direction intersecting the film surface. The top surface of the piezoelectric thin film is flattened by polishing so as to have a root mean square roughness of 2 nm or smaller.
摘要翻译：薄膜体声波振荡器包括：基座; 设置在基座上的阻挡层; 设置在阻挡层上的下电极; 设置在下电极上的压电薄膜; 以及设置在压电薄膜上的上电极。压电薄膜包括在与膜表面相交的方向上延伸的柱状晶体。压电薄膜的上表面通过抛光而平坦化，使得均方根粗糙度为2nm以下。

5. 发明授权

US07109637B2 Thin-film bulk acoustic oscillator and method of manufacturing same 有权
标题翻译：薄膜体声波振荡器及其制造方法
公开(公告)号：US07109637B2
公开(公告)日：2006-09-19
申请号：US10814120
申请日：2004-04-01
申请人： Eiju Komuro , Hisatoshi Saitou , Yoshinari Yamashita
发明人： Eiju Komuro , Hisatoshi Saitou , Yoshinari Yamashita
IPC分类号： H01L41/04 , H03H9/15
CPC分类号： H03H9/175 , H03H3/02 , H03H9/174
摘要： A thin-film bulk acoustic oscillator comprises: a base; a barrier layer disposed on the base; a lower electrode disposed on the barrier layer; a piezoelectric thin film disposed on the lower electrode; and an upper electrode disposed on the piezoelectric thin film. The piezoelectric thin film includes a columnar crystal that extends in the direction intersecting the film surface. The top surface of the piezoelectric thin film is flattened by polishing so as to have a root mean square roughness of 2 nm or smaller.
摘要翻译：薄膜体声波振荡器包括：基座; 设置在基座上的阻挡层; 设置在阻挡层上的下电极; 设置在下电极上的压电薄膜; 和设置在压电薄膜上的上电极。压电薄膜包括在与膜表面相交的方向上延伸的柱状晶体。压电薄膜的上表面通过抛光而平坦化，使得均方根粗糙度为2nm以下。

6. 发明授权

US06989723B2 Piezoelectric resonant filter and duplexer 有权
标题翻译：压电谐振滤波器和双工器
公开(公告)号：US06989723B2
公开(公告)日：2006-01-24
申请号：US10731157
申请日：2003-12-10
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
IPC分类号： H03H9/54 , H03H9/70
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/605 , H03H9/706 , H03H2003/0407
摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.
摘要翻译：压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。串联谐振器组和并联谐振器组中的至少一个具有用于使共振频率的温度系数接近零的温度补偿层。

7. 发明授权

US07187254B2 Film bulk acoustic resonator filters with a coplanar waveguide 有权
标题翻译：具有共面波导的膜体声波谐振器滤波器
公开(公告)号：US07187254B2
公开(公告)日：2007-03-06
申请号：US10380985
申请日：2001-07-11
申请人： Qingxin Su , Paul B. Kirby , Eiju Komuro , Masaaki Imura , Roger W. Whatmore
发明人： Qingxin Su , Paul B. Kirby , Eiju Komuro , Masaaki Imura , Roger W. Whatmore
IPC分类号： H03H9/54
CPC分类号： H03H3/04 , H03H9/174 , H03H9/568
摘要： Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a substrate (20) and connected to associated circuitry by one or more transmission lines formed on the substrate (20). The arrangement of the resonators (10, 11) between the ground and signal lines of a coplanar line structure provides a means of minimising the area of the filter. Embedding a ladder filter within the coplanar transmission line structure eliminates the need for wire bonds, thus simplifying fabrication. Embodiments for 2×2, and hither order filters are described.
摘要翻译：在共面波导线结构内串联（10）和平行（11）配置的多个薄膜体声波谐振器（10,11）提供了紧凑的梯形滤波器。谐振器（10,11）形成在衬底（20）中的开口（28）上，并通过形成在衬底（20）上的一个或多个传输线连接到相关联的电路。在共面线结构的接地和信号线之间的谐振器（10,11）的布置提供了使滤波器的面积最小化的手段。在共面传输线结构内嵌入梯形滤波器消除了对引线键合的需要，从而简化了制造。描述了2x2的实施例和两个阶次滤波器。

8. 发明授权

US07199504B2 Film bulk acoustic resonator filter 有权
标题翻译：薄膜体声波谐振滤波器
公开(公告)号：US07199504B2
公开(公告)日：2007-04-03
申请号：US10718799
申请日：2003-11-24
申请人： Eiju Komuro , Masaaki Imura , Qingxin Su , Paul B. Kirby , Roger W. Whatmore
发明人： Eiju Komuro , Masaaki Imura , Qingxin Su , Paul B. Kirby , Roger W. Whatmore
IPC分类号： H03H9/54
CPC分类号： H03H3/04 , H03H9/174 , H03H9/568
摘要： A ladder-type film bulk acoustic resonator (FBAR) filter comprises two series FBARs and two parallel FBARs. Each FBAR has a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top and bottom electrodes. The top electrodes of the two series FBARs form part of a signal line of a coplanar waveguide transmission line. The top electrodes of the two series FBARs are connected to associated circuitry. The two series FBARs have a common bottom electrode.
摘要翻译：梯形薄膜体声波谐振器（FBAR）滤波器包括两个串联FBAR和两个并联FBAR。每个FBAR具有顶部电极，底部电极和夹在顶部和底部电极之间的压电层。两个串联FBAR的顶部电极构成共面波导传输线的信号线的一部分。两个串联FBAR的顶部电极连接到相关电路。两个串联FBAR有一个共同的底部电极。

9. 发明授权

US06977563B2 Thin-film piezoelectric resonator and method for fabricating the same 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US06977563B2
公开(公告)日：2005-12-20
申请号：US10670234
申请日：2003-09-26
申请人： Eiju Komuro , Masaaki Imura , Katsuhiko Gunji , Taku Takeishi , Roger William Whatmore , Joseph Edward Albert Southin
发明人： Eiju Komuro , Masaaki Imura , Katsuhiko Gunji , Taku Takeishi , Roger William Whatmore , Joseph Edward Albert Southin
IPC分类号： H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/58 , H03H9/70 , H03H9/00
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02094 , H03H9/02149 , H03H9/173 , H03H9/174 , H03H2003/0428
摘要： A thin-film piezoelectric resonator including a piezoelectric thin film having piezoelectric characteristic, and an upper electrode and a lower electrode arranged on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film, wherein: each of the upper electrode and the lower electrode includes a resonant portion, and a lead-out portion; and the electrode thickness of at least one part of the lead-out portion in at least one of the upper electrode and the lower electrode is larger than the electrode thickness of the resonant portion formed to be continued from the lead-out portion.
摘要翻译：包括具有压电特性的压电薄膜的薄膜压电谐振器和布置在压电薄膜的相对表面上的上电极和下电极，用于向压电薄膜施加激励电压，其中：每个上电极并且所述下电极包括谐振部分和引出部分; 并且上电极和下电极中的至少一个中的引出部分的至少一部分的电极厚度大于形成为从引出部分继续的谐振部分的电极厚度。

10. 发明授权

US06954117B2 Electronic component including piezo-electric resonator mounted by face-down bonding with a required die shear strength 有权
标题翻译：包括压电谐振器的电子部件，通过面向下接合以所需的模头剪切强度安装
公开(公告)号：US06954117B2
公开(公告)日：2005-10-11
申请号：US10806378
申请日：2004-03-23
申请人： Eiju Komuro , Toshiyuki Nagatsuka , Tsutomu Yasui
发明人： Eiju Komuro , Toshiyuki Nagatsuka , Tsutomu Yasui
IPC分类号： H01L41/09 , H01L41/08 , H01L41/18 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/17 , H03H9/52 , H03H9/54 , H03H9/70
CPC分类号： H03H9/1014 , H01L2224/16225 , H03H9/0514 , H03H9/175 , H03H9/706
摘要： In an electronic component having a piezo-electric resonator 10 formed on an element substrate 11 and obtaining a signal having a predetermined resonant frequency by a bulk wave propagating within a piezo-electric film 15, a mounting substrate 19 on which the piezo-electric resonator 10 is mounted by face-down bonding through N bumps 18, when a maximum diameter of said N bumps 18 is defined as D μm, die shear strength of said N bumps 18 is not smaller than ND/6 (g), preferably, not smaller than ND/3.6 (g).
摘要翻译：在具有形成在元件基板11上的压电谐振器10并通过在压电薄膜15内传播的体波获得具有预定谐振频率的信号的电子部件中，安装基板19，压电谐振器如图10所示，当N个凸块18的最大直径被定义为D mum时，所述N个凸起18的冲模剪切强度不小于ND / 6（g），优选地不是小于ND / 3.6（g）。

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