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1. 发明授权

US4614433A Mask-to-wafer alignment utilizing zone plates 失效
标题翻译：使用区域的掩模到晶片对准
公开(公告)号：US4614433A
公开(公告)日：1986-09-30
申请号：US629056
申请日：1984-07-09
申请人： Martin Feldman , Peter A. Heimann , William A. Johnson , Theodore F. Retajczyk, Jr. , Donald L. White
发明人： Martin Feldman , Peter A. Heimann , William A. Johnson , Theodore F. Retajczyk, Jr. , Donald L. White
IPC分类号： G01B11/24 , G03F1/00 , G03F9/00 , H01L21/027 , H01L21/30 , G01B11/27
CPC分类号： G03F9/7076 , G03F9/7023
摘要： Mask-to-wafer alignment in X-ray lithography is advantageously carried out utilizing zone plate marks formed on the mask and wafer. In practice, it has been observed that the intensity and in some cases even the location of the centroid of the light spot formed by a zone plate mask can vary during alignment as the mask-to-wafer spacing is changed.The present invention is based on the discovery and analysis of the causes of such variations. Based thereon, applicants have devised a modified mask structure which, when used with a wafer in a zone plate alignment system, enables mask-to-wafer alignment to be made more easily and more reliably than was possible heretofore. The modified mask structure includes a localized blocking layer over each zone plate on the mask. This layer allows only a negligible portion of the light employed to illuminate the zone plates on the mask to propagate into the mask-to-wafer space. Also, the modified mask structure includes an antireflection layer that reduces interference effects between light spots imaged by the wafer zone plates and light reflected from the mask. Further, one layer of the modified mask structure is designed to have a quarter-wavelength thickness thereby minimizing interfering light reflected from that layer.
摘要翻译：利用在掩模和晶片上形成的区域板标记有利地进行X射线光刻中的掩模到晶片对准。在实践中，已经观察到，随着掩模到晶片间隔的改变，强度以及在某些情况下甚至由区域板掩模形成的光斑的质心的位置可以在对准期间变化。本发明基于对这种变化的原因的发现和分析。基于此，申请人已经设计了改进的掩模结构，当与区板对准系统中的晶片一起使用时，能够使得掩模到晶片对准比以前更容易和更可靠地进行。修改的掩模结构包括在掩模上的每个区域板上的局部阻挡层。该层仅允许用于照射掩模上的区域板的光的可忽略部分传播到掩模到晶片空间。此外，修改的掩模结构包括减少由晶片区域板成像的光点和从掩模反射的光线之间的干涉效应的抗反射层。此外，修改的掩模结构的一层被设计为具有四分之一波长厚度，从而使从该层反射的干扰光最小化。

2. 发明授权

US4326805A Method and apparatus for aligning mask and wafer members 失效
标题翻译：用于对准掩模和晶片构件的方法和装置
公开(公告)号：US4326805A
公开(公告)日：1982-04-27
申请号：US139544
申请日：1980-04-11
申请人： Martin Feldman , Alan D. White , Donald L. White
发明人： Martin Feldman , Alan D. White , Donald L. White
IPC分类号： H01L21/30 , G03F9/00 , G03F9/02 , H01L21/027 , G01B11/27
CPC分类号： G03F9/7076 , G03F9/703
摘要： Zone plate patterns (12,20,61,62) formed on spaced-apart mask and wafer members (10,60) are utilized for alignment purposes in the fabrication of integrated circuits. By providing off-axis illumination of the patterns, a significant mask-to-wafer alignment capability is provided in an X-ray lithographic system. This capability includes being able to correct for so-called magnification errors that arise from physical distortions in the mask and/or wafer or in other components of the system. These errors are compensated for by utilizing the zone plate patterns to form alignment marks that serve as a basis for adjusting the mask-to-wafer separation.
摘要翻译：形成在间隔开的掩模和晶片构件（10,60）上的区域板图案（12,20,61,62）用于集成电路制造中的对准目的。通过提供图案的离轴照明，在X射线光刻系统中提供了显着的掩模到晶片对准能力。该能力包括能够校正由掩模和/或晶片或系统的其它部件中的物理失真引起的所谓放大误差。这些误差通过利用区域板图案来补偿，以形成用作调整掩模到晶片间隔的基础的对准标记。

3. 发明授权

US4398824A Wafer tilt compensation in zone plate alignment system 失效
标题翻译：晶片对准系统中的晶片倾斜补偿
公开(公告)号：US4398824A
公开(公告)日：1983-08-16
申请号：US254486
申请日：1981-04-15
申请人： Martin Feldman , Alan D. White , Donald L. White
发明人： Martin Feldman , Alan D. White , Donald L. White
IPC分类号： H01L21/68 , G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30 , G01B11/27
CPC分类号： G03F9/7088 , G03F9/7076
摘要： The present invention is a method and apparatus for aligning a semiconductor wafer to be patterned by a step-and-repeat photolithographic system. The inventive alignment technique, which is able to compensate for local wafer tilt and/or nonuniform photoresist thickness, is applicable to semiconductor wafers which have, on a surface portion, one or more Fresnel zone plate alignment marks.
摘要翻译：本发明是用于通过步进重复光刻系统对准待图案化的半导体晶片的方法和装置。能够补偿局部晶片倾斜和/或不均匀光致抗蚀剂厚度的本发明的对准技术适用于在表面部分上具有一个或多个菲涅尔区域板对准标记的半导体晶片。

4. 发明授权

US11559204B2 Contact-type endoscope SERS probe, and related methods 有权
公开(公告)号：US11559204B2
公开(公告)日：2023-01-24
申请号：US17078955
申请日：2020-10-23
申请人： Martin Feldman , Dooyoung Hah
发明人： Martin Feldman , Dooyoung Hah
IPC分类号： A61B5/00 , G01N21/65 , A61B1/06 , A61B1/00 , G01J3/44 , G01J3/02 , A61B1/002
摘要： A contact-type endoscope surface enhanced Raman scattering (SERS) probe includes a gradient-index (GRIN) lens, a transparent substrate adhered to the GRIN lens, and a rough metallic layer adhered to an opposite side of the transparent substrate from the GRIN lens. The GRIN lens focuses light from a Raman spectrometer onto the rough metallic layer, and the rough metallic layer is positioned at the distal end of the contact-type endoscope SERS probe.

5. 发明申请

US20100206430A1 Modular Router With Base Power Switch 有权
标题翻译：带基本电源开关的模块化路由器
公开(公告)号：US20100206430A1
公开(公告)日：2010-08-19
申请号：US12371559
申请日：2009-02-13
申请人： David Pozgay , James B. Stevens , Harald Krondorfer , Jeff Schreiner , Martin Feldman , Tim Truesdale , Arturo Gonzalez , Deborah Brown , Erick Higashi , Charlie Ren
发明人： David Pozgay , James B. Stevens , Harald Krondorfer , Jeff Schreiner , Martin Feldman , Tim Truesdale , Arturo Gonzalez , Deborah Brown , Erick Higashi , Charlie Ren
IPC分类号： B27C5/10 , B23Q5/10
CPC分类号： B23Q9/0028 , B27C5/10 , Y10T409/306608 , Y10T409/307952 , Y10T409/308624
摘要： A routing machine comprises a base unit and a motor unit releasably connected to the base unit. The base unit includes a handle and a first electrical connector. The motor unit includes an electric motor, motor control circuitry configured to energize or de-energize the electric motor, and a second electrical connector connected to the motor control circuitry. The second electrical connector is configured to engage the first electrical connector when the motor unit is properly seated on the base unit. An electric switch is positioned on the base unit. The motor control circuitry is configured to deliver electric power to the electric motor when the switch is in an on position. The motor control circuitry is configured to not provide electric power to the electric motor when the switch is in an off position.
摘要翻译：路由机包括基本单元和可释放地连接到基座单元的马达单元。基座单元包括手柄和第一电连接器。电动机单元包括电动机，电动机控制电路，其被配置为使电动机通电或断电;以及连接到电动机控制电路的第二电连接器。第二电连接器被配置为当电动机单元正确地就座在基座单元上时接合第一电连接器。电开关位于基座上。电动机控制电路被配置为当开关处于接通位置时向电动机供电。电动机控制电路构造成当开关处于关闭位置时不向电动机提供电力。

6. 发明申请

US20090015937A1 Digital image pointing and digital zoom optical system 有权
标题翻译：数字图像指向和数字变焦光学系统
公开(公告)号：US20090015937A1
公开(公告)日：2009-01-15
申请号：US12154738
申请日：2008-05-27
申请人： Martin Feldman
发明人： Martin Feldman
IPC分类号： G02B15/14
CPC分类号： G02B3/14 , G02B17/0896
摘要： An optical system for the production of images, comprising an all optical system is disclosed. Said all optical system manipulates images directly by digital electronics without loss in the number of resolvable spots at higher magnifications.
摘要翻译：公开了一种用于生产图像的光学系统，包括全光学系统。所有的光学系统都是通过数字电子技术直接操纵图像，而不会在较高放大倍率的可解析点的数量上损失。

7. 发明申请

US20080297807A1 High Precision Code Plates and Geophones 有权
标题翻译：高精度代码板和地震检波器
公开(公告)号：US20080297807A1
公开(公告)日：2008-12-04
申请号：US12097835
申请日：2006-12-20
申请人： Martin Feldman , Li Jiang
发明人： Martin Feldman , Li Jiang
IPC分类号： G01B11/14
CPC分类号： G02B27/60 , G01V1/16 , G02B27/42 , G02B27/4255
摘要： An apparatus and method are disclosed for imaging a diffraction grating with a very high depth of focus, using a highly accurate code plate position measurement system. Positions may be measured to an accuracy of 1 nm or even smaller. The system may be used in fields such as manufacturing integrated circuits, and low- and very-low-frequency geophones, and other low- and very-low-frequency acoustic detectors.
摘要翻译：公开了一种使用高度准确的代码板位置测量系统对具有非常高的焦点深度的衍射光栅进行成像的装置和方法。位置可以测量到1nm或甚至更小的精度。该系统可用于诸如制造集成电路，低频和非常低频地震检波器以及其它低频和非常低频率声波检测器的领域。

8. 发明申请

US20100049002A1 Forward-Looking Optical Coherence Tomography Endoscope 有权
标题翻译：前瞻性光学相干断层扫描内窥镜
公开(公告)号：US20100049002A1
公开(公告)日：2010-02-25
申请号：US12444703
申请日：2007-10-09
申请人： Martin Feldman , Dooyoung Hah
发明人： Martin Feldman , Dooyoung Hah
IPC分类号： A61B1/06 , G02B26/10 , G02B23/26 , G01B9/02
CPC分类号： G01B9/02091 , A61B5/0062 , A61B5/0066 , A61B5/0084 , A61B5/415 , A61B5/418 , A61B5/6852 , G01B9/0205 , G01B2290/35
摘要： A forward-looking, optical coherence tomography, endoscopic probe is disclosed capable of high resolution with a small diameter. Light is focused and scanned during three passes through a lens. A light source supplies light to the proximal side of the lens. The light makes a first pass through the lens, and is reflected from a fixed mirror on the distal side. The reflected light makes a second pass from the distal side to the proximal side, and exits the lens at the proximal side, and is reflected by a scanning mirror. The light makes a third pass through the lens from the proximal side to the distal side to a sample to be imaged. The light is focused during each of the three passes through the lens. Light reflected from the sample passes back through and is focused by the same system.
摘要翻译：公开了一种前瞻性的光学相干断层扫描，能够具有小直径的高分辨率的内窥镜探针。在通过镜头的三次通过期间，光被聚焦和扫描。光源将光提供给透镜的近侧。光线首先通过透镜，并从远侧的固定镜反射。反射光从远侧到近侧进行第二遍，并且在近侧离开透镜，并被扫描镜反射。光从近侧到远侧进行第三次穿透透镜到待成像的样品。在通过透镜的三次通过中的每一次中，光聚焦。来自样品的光反射回并通过相同的系统聚焦。

9. 发明授权

US06404481B1 Adaptive lithography membrane masks 失效
标题翻译：自适应光刻膜面膜
公开(公告)号：US06404481B1
公开(公告)日：2002-06-11
申请号：US09578573
申请日：2000-05-25
申请人： Martin Feldman , Henry I. Smith , Ken-Ichi Murooka , Michael H. Lim
发明人： Martin Feldman , Henry I. Smith , Ken-Ichi Murooka , Michael H. Lim
IPC分类号： G03B2768
CPC分类号： G03F7/70433 , G03F1/20 , G03F1/22 , G03F7/70633 , G03F7/70875
摘要： Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer. In another embodiment, a reference pattern is formed on the membrane as a means of measuring mask distortion, and the heat input distribution needed to correct distortion is determined by subsequent measurements of the reference pattern. In this alternative embodiment, any source of distortion in the mask may be corrected.
摘要翻译：公开了通过局部加热光刻掩模中的膜来补偿光刻中的变形的技术。这些技术可以同时用于收缩和局部扩大掩模的区域，以便调整变化的幅度和失真的迹象。在一个实施例中，校正方法包括两个步骤：（1）通过传统手段对发射晶片进行曝光和测量，以确定整个场中的几个点处的覆盖误差。（2）在后续晶片曝光期间，校准光束聚焦在掩模上。来自吸收光的加热产生位移，补偿由发射晶片测量的重叠误差。可以校正任何失真源 - 例如，最初出现在掩模上的失真，仅在掩模上随时间发生的失真或晶片上的失真。在另一个实施例中，作为测量掩模失真的手段在膜上形成参考图案，并且通过参考图案的后续测量来确定校正失真所需的热输入分布。在该替代实施例中，可以校正掩模中的任何失真源。

10. 发明授权

US4742234A Charged-particle-beam lithography 失效
标题翻译：带电粒子束光刻
公开(公告)号：US4742234A
公开(公告)日：1988-05-03
申请号：US054146
申请日：1987-05-12
申请人： Martin Feldman , Martin P. Lepselter
发明人： Martin Feldman , Martin P. Lepselter
IPC分类号： H01J37/30 , H01J37/317 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177
摘要： An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing applications is thereby provided.
摘要翻译：在光刻系统中使用细长的带电粒子源以形成以线性阵列布置的多个聚焦电子（或离子）束。因此，提供了特别适用于直接写入应用的极高通量光刻系统的基础。

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