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1. 发明授权

US08659310B2 Method and system for performing self-tests in an electronic system 失效
标题翻译：在电子系统中执行自检的方法和系统
公开(公告)号：US08659310B2
公开(公告)日：2014-02-25
申请号：US13087550
申请日：2011-04-15
申请人： Martin Eckert , Roland Frech , Jochen Supper , Otto A. Torreiter
发明人： Martin Eckert , Roland Frech , Jochen Supper , Otto A. Torreiter
IPC分类号： G01R31/3187
CPC分类号： G01R31/31721 , G01R31/3004
摘要： A method and system for performing a self-test of power supply quality for an integrated circuit chip within an electronic system. The electronic system is subjected to a well-defined repetitive activity, such as by using an amplitude modulated system clock tree. With the repetitive activity causing current consumption within the chip, time-domain local power supply voltage (U(t)) is measured for a location on the chip. A set of time-domain measured voltage data (U(t)) is accumulated and transformed into the frequency domain to yield a local voltage profile (U(f)). The local voltage profile (U(f)) is compared with a reference voltage profile (U0(f)) to verify whether power supply quality at the chip location under test is adequate. Alternatively, a local impedance profile Z(f) evaluated from the local voltage profile (U(f)) may be compared to a reference impedance profile Z0(f).
摘要翻译：一种用于对电子系统内的集成电路芯片进行电源质量自检的方法和系统。电子系统受到明确的重复活动，例如通过使用调幅系统时钟树。由于重复的活动导致芯片内的电流消耗，对于芯片上的位置测量时域本地电源电压（U（t））。一组时域测量电压数据（U（t））被积累并变换到频域以产生局部电压分布（U（f））。将本地电压曲线（U（f））与参考电压曲线（U0（f））进行比较，以验证被测芯片位置的电源质量是否足够。或者，可以将从局部电压分布（U（f））估计的局部阻抗曲线Z（f）与参考阻抗曲线Z0（f）进行比较。

2. 发明授权

US09709625B2 Measuring power consumption in an integrated circuit 有权
公开(公告)号：US09709625B2
公开(公告)日：2017-07-18
申请号：US13170512
申请日：2011-06-28
申请人： Martin Eckert , Roland Frech , Claudio Siviero , Jochen Supper , Otto A. Torreiter , Thomas-Michael Winkel
发明人： Martin Eckert , Roland Frech , Claudio Siviero , Jochen Supper , Otto A. Torreiter , Thomas-Michael Winkel
IPC分类号： G01R31/28 , G01R31/30 , G01R31/3185
CPC分类号： G01R31/2851 , G01R31/2879 , G01R31/3004 , G01R31/3012 , G01R31/318575
摘要： A method for determining power consumption of a power domain within an integrated circuit is presented. In a first step, a local power supply impedance profile (Z(f)) of this power domain is determined. Subsequently, a local time-resolved power supply voltage (U(t)) is measured while a well-defined periodic activity is executed in power domain. A set of time-domain measured voltage data (U(t)) is thus accumulated and transformed into the frequency domain to yield a voltage spectrum (U(f)). A current spectrum I(t) is calculated from this voltage profile (U(f)) by using the power supply impedance profile Z(f) of this power domain as I(t)=Ff−1{U(f)/Z(f)}. Finally, a time-resolved power consumption spectrum P(t) is determined from measured voltage spectrum U(t)) and calculated current spectrum (I(t)). This power consumption (P(t)) may be compared with a reference (Pref(t)) to verify whether power consumption within power domain matches expectations.

3. 发明申请

US20120013356A1 Method And System For Performing Self-Tests In An Electronic System 失效
标题翻译：在电子系统中进行自检的方法和系统
公开(公告)号：US20120013356A1
公开(公告)日：2012-01-19
申请号：US13087550
申请日：2011-04-15
申请人： Martin Eckert , Roland Frech , Jochen Supper , Otto A. Torreiter
发明人： Martin Eckert , Roland Frech , Jochen Supper , Otto A. Torreiter
IPC分类号： G01R31/3187
CPC分类号： G01R31/31721 , G01R31/3004
摘要： A method and system for performing a self-test of power supply quality for an integrated circuit chip within an electronic system. The electronic system is subjected to a well-defined repetitive activity, such as by using an amplitude modulated system clock tree. With the repetitive activity causing current consumption within the chip, time-domain local power supply voltage (U(t)) is measured for a location on the chip. A set of time-domain measured voltage data (U(t)) is accumulated and transformed into the frequency domain to yield a local voltage profile (U(f)). The local voltage profile (U(f)) is compared with a reference voltage profile (U0(f)) to verify whether power supply quality at the chip location under test is adequate. Alternatively, a local impedance profile Z(f) evaluated from the local voltage profile (U(f)) may be compared to a reference impedance profile Z0(f).
摘要翻译：一种用于对电子系统内的集成电路芯片进行电源质量自检的方法和系统。电子系统受到明确的重复活动，例如通过使用调幅系统时钟树。由于重复的活动导致芯片内的电流消耗，对于芯片上的位置测量时域本地电源电压（U（t））。一组时域测量电压数据（U（t））被积累并变换到频域以产生局部电压分布（U（f））。将本地电压曲线（U（f））与参考电压曲线（U0（f））进行比较，以验证被测芯片位置的电源质量是否足够。或者，可以将从局部电压分布（U（f））估计的局部阻抗曲线Z（f）与参考阻抗曲线Z0（f）进行比较。

4. 发明授权

US06665843B2 Method and system for quantifying the integrity of an on-chip power supply network 失效
公开(公告)号：US06665843B2
公开(公告)日：2003-12-16
申请号：US10053197
申请日：2002-01-18
申请人： Roland Frech , Andreas Huber , Erich Klink , Jochen Supper
发明人： Roland Frech , Andreas Huber , Erich Klink , Jochen Supper
IPC分类号： G06F1750
CPC分类号： G06F17/5036
摘要： A method and system for analyzing the dynamic behavior of an electrical circuit to determine whether a voltage level provided by a power supply network drops below a predetermined voltage level during operation of the electrical circuit is described. In a first step, a design data set representing pertinent technical specifications of an electrical or an integrated circuit are read in order to extract location information and value of switching and non-switching capacitance. Next, the circuit and technology propagation speeds are inputted therein. The length for specifying the size of a portion of a circuit area is determined wherein the electrical circuit is formed. Next, the circuit area is divided into a plurality of partitions of a specified size, and the switching capacitance and the non-switching capacitance are separately summarized for each partition. The voltage level drop is then calculated for each partition. Finally, the calculated voltage level drop is displayed in relation to the respective partition. The present method and system can be advantageously used for an on-chip power supply network evaluation as well as for an early chip development process.

5. 发明授权

US06535075B2 Tunable on-chip capacity 失效
标题翻译：可调芯片容量
公开(公告)号：US06535075B2
公开(公告)日：2003-03-18
申请号：US09737929
申请日：2000-12-15
申请人： Roland Frech , Erich Klink , Jochen Supper
发明人： Roland Frech , Erich Klink , Jochen Supper
IPC分类号： H03H701
CPC分类号： H01L27/0805
摘要： The invention relates to a tunable on-chip capacity circuit for a semiconductor chip (10) mounted on a substrate (30) and including a plurality of power supply decoupling capacitors (20-23) which can be selectively activated or deactivated by being switched on or off the power supply system. An on-chip detecting circuit (32) determines a circuit specific load/unload frequency of the on-chip power supply network, and on-chip control means (28, 33) responsive to signals of the detecting circuit increases or decreases the total of the on-chip capacity (CSD) by selectively activating or deactivating power supply decoupling capacitors (20-23). Off-chip path impedances (LMC, RMC), an off-chip capacity (CM) and the total on-chip capacity (CC), including the plurality of power supply decoupling capacitors (20-23) and parasitic on-chip capacities (CP), form a resonance loop (40) which is tunable by changing the total capacity (CSD) of the on-chip power supply decoupling capacitors. By tuning the total capacity (CSD) of the decoupling capacitors a resonance condition of the resonance loop (40) is met under which a minimum of switching power noise and a minimum switching power consumption is achieved.
摘要翻译：本发明涉及一种用于半导体芯片（10）的可调片上容量电路，该半导体芯片（10）安装在基板（30）上并且包括多个电源去耦电容器（20-23），该电源去耦电容器可通过接通而被选择性地激活或去激活或关闭供电系统。片上检测电路（32）确定片上电源网络的电路特定的负载/卸载频率，响应于检测电路的信号的片上控制装置（28,33）增加或减少片上容量（CSD）通过选择性地激活或去激活电源去耦电容器（20-23）。片外路径阻抗（LMC，RMC），片外容量（CM）和片上容量（CC），包括多个电源去耦电容器（20-23）和寄生片上容量（ CP）形成谐振回路（40），其可通过改变片上电源去耦电容器的总容量（CSD）来调节。通过调谐去耦电容器的总容量（CSD），满足谐振回路（40）的谐振条件，在该谐振回路（40）的谐振条件下达到最小开关功率噪声和最小开关功耗。

6. 发明授权

US08519720B2 Method and system for impedance measurement in an integrated Circuit 失效
标题翻译：集成电路中阻抗测量的方法和系统
公开(公告)号：US08519720B2
公开(公告)日：2013-08-27
申请号：US13087602
申请日：2011-04-15
申请人： Roland Frech , Jochen Supper , Thomas-Michael Winkel
发明人： Roland Frech , Jochen Supper , Thomas-Michael Winkel
IPC分类号： G01R27/28
CPC分类号： G01R27/16 , G01R31/3004
摘要： A method for determining a power supply impedance profile (|Z(f)|) at a predetermined load location within an electronic system. A repetitive activity (such as a modulated clock tree signal) is applied in the load location, and the local power supply voltage (U(t)) caused by this repetitive activity is measured. Rather than measuring the corresponding current consumption (I(t)) caused by the repetitive activity, the current consumption is calculated analytically. The local power supply impedance profile (|Z(f)|) is calculated as the ratio of the frequency-domain voltage and current consumption magnitudes (|U(f)|, |I(f)|) of the measured power supply voltage (U(t)) and the calculated current consumption (I(t)).
摘要翻译：一种用于确定电子系统内的预定负载位置处的电源阻抗分布（| Z（f）|）的方法。在负载位置施加重复活动（如调制时钟树信号），并测量由该重复活动引起的局部电源电压（U（t））。不是测量由重复活动引起的相应的电流消耗（I（t）），而是分析计算电流消耗。本地电源阻抗曲线（| Z（f）|）被计算为测量的电源电压的频域电压和电流消耗量（| U（f）|，| I（f）|）（U（t））和计算出的电流消耗（I（t））。

7. 发明申请

US20120013353A1 Method And System For Impedance Measurement In An Integrated Circuit 失效
标题翻译：集成电路中阻抗测量的方法和系统
公开(公告)号：US20120013353A1
公开(公告)日：2012-01-19
申请号：US13087602
申请日：2011-04-15
申请人： Roland Frech , Jochen Supper , Thomas-Michael Winkel
发明人： Roland Frech , Jochen Supper , Thomas-Michael Winkel
IPC分类号： G01R27/28
CPC分类号： G01R27/16 , G01R31/3004
摘要： A method for determining a power supply impedance profile (|Z(f)|) at a predetermined load location within an electronic system. A repetitive activity (such as a modulated clock tree signal) is applied in the load location, and the local power supply voltage (U(t)) caused by this repetitive activity is measured. Rather than measuring the corresponding current consumption (I(t)) caused by the repetitive activity, the current consumption is calculated analytically. The local power supply impedance profile (|Z(f)|) is calculated as the ratio of the frequency-domain voltage and current consumption magnitudes (|U(f)|, |I(f)|) of the measured power supply voltage (U(t)) and the calculated current consumption (I(t)).
摘要翻译：一种用于确定电子系统内的预定负载位置处的电源阻抗分布（| Z（f）|）的方法。在负载位置施加重复活动（如调制时钟树信号），并测量由该重复活动引起的局部电源电压（U（t））。不是测量由重复活动引起的相应的电流消耗（I（t）），而是分析计算电流消耗。本地电源阻抗曲线（| Z（f）|）被计算为测量的电源电压的频域电压和电流消耗量（| U（f）|，| I（f）|）（U（t））和计算出的电流消耗（I（t））。

8. 发明授权

US06424058B1 Testable on-chip capacity 失效
标题翻译：片上容量可测
公开(公告)号：US06424058B1
公开(公告)日：2002-07-23
申请号：US09672809
申请日：2000-09-28
申请人： Roland Frech , Erich Klink , Jochen Supper
发明人： Roland Frech , Erich Klink , Jochen Supper
IPC分类号： H02M306
CPC分类号： G01R27/2605 , G01R31/27 , Y10T307/74 , Y10T307/766 , Y10T307/826
摘要： The invention relates to a testable on-chip capacitor cell 10 including a decoupling capacitor (Ci) which can be disconnected from the power distribution network and discharged through a cell internal discharge circuit. An externally controllable switch (Si) connects in a first switching position the decoupling capacitor to the power supply system and disconnects in a second switching position the decoupling capacitor from the power supply system and connects it to a resistor (Ri) which is part of the discharge circuit. An off-chip control unit (16) is provided for toggling the switch with a frequency fT between its first and second position to perform a capacitor test operation. By a current measurement device the averaged power supply current demand of the decoupling capacitor is measured when switch (Si) is toggled. The actual capacity of the decoupling capacitor is determined as a function of the power supply voltage, of the switch toggling frequency (fT) and of the averaged power supply current measured. The invention also relates to a semiconductor chip containing a plurality of capacitors cells of the type described, and to a method for testing the power supply decoupling capacity of such chips.
摘要翻译：本发明涉及一种可测试的片上电容器单元10，其包括可以从配电网络断开并通过单元内部放电电路放电的去耦电容器（Ci）。外部可控开关（Si）将去耦电容器的第一开关位置连接到电源系统，并在去耦电容器与电源系统的第二开关位置断开，并将其连接到电阻器（Ri），该电阻器放电电路。提供了片外控制单元（16），用于在第一和第二位置之间以频率fT切换开关，以执行电容器测试操作。通过电流测量装置，当开关（Si）被切换时，测量去耦电容器的平均电源电流需求。去耦电容的实际容量根据电源电压，开关切换频率（fT）和测量的平均电源电流确定。本发明还涉及包含所述类型的多个电容器单元的半导体芯片以及用于测试这种芯片的电源去耦能力的方法。

9. 发明授权

US08866504B2 Determining local voltage in an electronic system 有权
标题翻译：确定电子系统中的局部电压
公开(公告)号：US08866504B2
公开(公告)日：2014-10-21
申请号：US13280626
申请日：2011-10-25
申请人： Martin Eckert , Roland Frech , Otto Torreiter , Dieter Wendel
发明人： Martin Eckert , Roland Frech , Otto Torreiter , Dieter Wendel
IPC分类号： G01R31/3187 , G01R31/317
CPC分类号： G01R31/3187 , G01R31/31703
摘要： A system for measuring a test voltage level (Vx) in a location within a chip is presented. The system includes an on-chip measurement device with an on-chip comparator and an on-chip storage. The on-chip comparator is configured for comparing the test voltage (Vx) to be measured to a reference voltage (Vref), while the on-chip storage is configured for storing the result of this comparison. The system also includes external (off-chip) equipment for generating the reference voltage (Vref), for generating probe signals for probing the state of the storage and for retrieving the state of said on-chip storage.
摘要翻译：提出了一种用于测量芯片内部位置的测试电压电平（Vx）的系统。该系统包括具有片上比较器和片上存储器的片上测量装置。片上比较器被配置为将待测量的测试电压（Vx）与参考电压（Vref）进行比较，而片上存储被配置用于存储该比较的结果。该系统还包括用于产生参考电压（Vref）的外部（片外）设备，用于产生用于探测存储器的状态并检索所述片上存储器的状态的探测信号。

10. 发明申请

US20120146674A1 DETERMINING LOCAL VOLTAGE IN AN ELECTRONIC SYSTEM 有权
标题翻译：确定电子系统中的本地电压
公开(公告)号：US20120146674A1
公开(公告)日：2012-06-14
申请号：US13280626
申请日：2011-10-25
申请人： Martin Eckert , Roland Frech , Otto Torreiter , Dieter Wendel
发明人： Martin Eckert , Roland Frech , Otto Torreiter , Dieter Wendel
IPC分类号： G01R31/3187
CPC分类号： G01R31/3187 , G01R31/31703
摘要： A system for measuring a test voltage level (Vx) in a location within a chip is presented. The system includes an on-chip measurement device with an on-chip comparator and an on-chip storage. The on-chip comparator is configured for comparing the test voltage (Vx) to be measured to a reference voltage (Vref), while the on-chip storage is configured for storing the result of this comparison. The system also includes external (off-chip) equipment for generating the reference voltage (Vref), for generating probe signals for probing the state of the storage and for retrieving the state of said on-chip storage.
摘要翻译：提出了一种用于测量芯片内部位置的测试电压电平（Vx）的系统。该系统包括具有片上比较器和片上存储器的片上测量装置。片上比较器被配置为将待测量的测试电压（Vx）与参考电压（Vref）进行比较，而片上存储被配置用于存储该比较的结果。该系统还包括用于产生参考电压（Vref）的外部（片外）设备，用于产生用于探测存储器的状态并检索所述片上存储器的状态的探测信号。

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